Abstract:
In a pad forming region electrically connecting an element forming region to the outside, in which a low dielectric constant insulating film is formed in association with in the element forming region, a Cu film serving as a via formed in the low dielectric constant insulating film in the pad forming region is disposed in higher density than that of a Cu film serving as a via in the element forming region. Hereby, when an internal stress occurs, the stress is prevented from disproportionately concentrating on the via, and deterioration of a function of a wiring caused thereby can be avoided.
Abstract:
A first capacitor recess and a wiring trench are formed through an interlayer insulating film. A lower electrode fills the first capacitor recess, and a first wiring fills the wiring trench. An etching stopper film and a via layer insulating film are disposed over the interlayer insulating film. A first via hole extends through the via layer insulating film and etching stopper film and reaches the first wiring, and a first plug fills the first via hole. A second capacitor recess is formed through the via layer insulating film, the second capacitor recess at least partially overlapping the lower electrode, as viewed in plan. The upper electrode covers the bottom and side surfaces of the second capacitor recess. A capacitor is constituted of the upper electrode, etching stopper film and lower electrode. A second wring connected to the first plug is formed over the via layer insulating film.
Abstract:
A facsimile control apparatus includes a main control unit configured so that power supply to the main control unit is shut off while the facsimile control apparatus is in an energy-saving mode; a first switching unit configured to switch the power supply to the main control unit on/off; and a detection circuit configured to output a switch control signal for turning the first switching unit on when detecting an input signal input from a public network.
Abstract:
A method of manufacturing a semiconductor device including an integrated circuit part in which an integrated circuit is formed and a main wall part including metal films surrounding said integrated circuit part, includes the step of selectively forming a sub-wall part including metal films between the integrated circuit part and the main wall part, in parallel to formation of the integrated circuit part and the main wall part. A sub-wall part which is in an “L” shape is provided between each corner of the main wall part and the integrated circuit part of the resulting semiconductor device.
Abstract:
In a sheet processing device in the form of an offset stacker, a sheet fence (103, 104) is provided on a side of sheets (S) to be processed stacked on a stack tray (3) opposite from a jogger (101, 102) so that the sheet fence accurately defines a final offset position of the sheets. Thereby, even when a transient offset position at which the sheets are stacked on the stack tray varies from one sheet to another, the side edges of sheets selected for offset stacking can be lined up without fail owing to the jogging action of the jogger and the supporting action of the sheet fence. A pair of joggers may be arranged on either side of the sheets, along with a pair of corresponding sheets fences on the opposing sides. The jogger and sheet fence on a same side may be supported by a common moveable frame (107, 108) so that the jogging action and sheet fence adjustment can be achieved by a common structure and a common drive unit.
Abstract:
A semiconductor device has a multilayer interconnection structure, wherein the multilayer interconnection structure comprises at least a first interconnection layer and a second interconnection layer formed over the first interconnection layer, the first interconnection layer comprises a first conductor pattern embedded in a first interlayer insulation film and constituting a part of an interconnection pattern and a second, another interconnection pattern embedded in the first interlayer insulation film, the second interconnection layer comprises a third conductor pattern embedded in a second interlayer insulation film and constituting a part of said interconnection pattern, the third conductor pattern has an extension part in a part thereof so as to extend in a layer identical to the third conductor pattern, the third conductor pattern being electrically connected to the first conductor pattern at a first region of the extension part via a first via plug, the extension part making a contact with the second conductor pattern at a second region further away from, or closer to the third conductor pattern with regard to the first region via a second via-plug of a diameter smaller than the first via-plug, the extension part of the third conductor pattern, the first via-plug and the second via-plug form, together with the second interlayer insulation film, a dual damascene structure.
Abstract:
An operation control device determines the operation of a throttle grip rotation torque element having a throttle grip rotation torque sensor and a throttle grip rotation torque operator, and a pseudo operation degree element for a throttle grip by integration using a throttle grip pseudo opening degree operator. A handle load sensor and a handle load operator detect a handle load. Right and left step load sensors and right and left step load operators detect right and left step loads. A weight shift element operator calculates a weight shift element. A target throttle opening degree is determined based on the operation of these elements, and a throttle valve is rotated by PID control. The operation control device can control a driving force in response to the weight shift of a rider in addition to the operation of the throttle grip.
Abstract:
In a server apparatus in which a plurality of physical servers and an I/O device are connected via an I/O switch, when the plurality of physical servers share one I/O device, a tag included in a request packet transmitted from a first physical server to the I/O device is translated into a value that is not used in the I/O device in the I/O switch and thereafter the request packet is transferred to the I/O device, and then a tag included in a response packet which responds to the request packet and which is transmitted from the I/O device to the first physical server is restored to the original tag, so that conflict of tags when a plurality of physical servers share one I/O device is avoided.
Abstract:
An automatic transmission includes: a Ravigneaux planetary gear set; first to fifth friction engagement elements; the first friction engagement element, the second friction engagement element, and the fifth friction engagement element being disposed on a front side which is nearer to the driving source than the output member, the third friction engagement element and the fourth friction engagement element being disposed on a rear side which is farther from the driving source than the output member, and a first drum member that includes an inner circumference on which the second friction engagement element is disposed, and an outer circumference on which the fifth friction engagement element is disposed, and that is connected with a front carrier plate located at a front end portion of the common carrier.
Abstract:
A first capacitor recess and a wiring trench are formed through an interlayer insulating film. A lower electrode fills the first capacitor recess, and a first wiring fills the wiring trench. An etching stopper film and a via layer insulating film are disposed over the interlayer insulating film. A first via hole extends through the via layer insulating film and etching stopper film and reaches the first wiring, and a first plug fills the first via hole. A second capacitor recess is formed through the via layer insulating film, the second capacitor recess at least partially overlapping the lower electrode, as viewed in plan. The upper electrode covers the bottom and side surfaces of the second capacitor recess. A capacitor is constituted of the upper electrode, etching stopper film and lower electrode. A second wring connected to the first plug is formed over the via layer insulating film.