Abstract:
A circuit component built-in module includes: a first electrical insulating substrate made of a mixture containing an inorganic filler and a thermosetting resin; a plurality of wiring patterns formed at least on a principal surface of the first electrical insulating substrate; a semiconductor chip incorporated in the first electrical insulating substrate and connected electrically with the wiring patterns; and inner vias electrically connecting the plurality of wiring patterns with one another, the inner vias passing through the first electrical insulating substrate. In the circuit component built-in module, the semiconductor chip has a thickness of not less than 30 nullm and not more than 100 nullm, and has a non-wired surface ground, and the circuit component built-in module has a thickness in a range of not less than 80 nullm and not more than 200 nullm. With this configuration, the high-performance and compact-size circuit component built-in module in which circuit components are mounted at a high density is provided so as to be used suitably in various types of electronic information devices.
Abstract:
A capacitor-mounted metal foil of the present invention is provided with a metal foil and a plurality of capacitors formed on the metal foil. Each of the capacitors includes a conductive layer disposed above the metal foil, and a dielectric layer disposed between the metal foil and the conductive layer.
Abstract:
A component built-in module includes an electric insulation layer, first wiring patterns in a plurality of layers that are laminated with the electric insulation layer being interposed therebetween, at least one first inner via electrically connecting the first wiring patterns in different layers with each other, and at least one electronic component that is embedded in the electric insulation layer and is mounted on any one of the first wiring patterns in the plurality of layers, wherein at least one of the first inner vias is present in a range that overlaps a range in which the electronic component is present in a lamination direction in which the first wiring patterns are laminated, and has a height in the lamination direction that is smaller than a height of the electronic component. Since the first inner via has a small height, the via diameter can be decreased. Therefore, it is possible to provide a component built-in module that has high reliability and is suitable for high-density component mounting.
Abstract:
A component built-in module including a core layer formed of an electric insulating material, and an electric insulating layer and a plurality of wiring patterns, which are formed on at least one surface of the core layer. The electric insulating material of the core layer is formed of a mixture including at least an inorganic filler and a thermosetting resin. At least one or more of active components and/or passive components are contained in an internal portion of the core layer. The core layer has a plurality of wiring patterns and a plurality of inner vias formed of a conductive resin. The electric insulating material formed of the mixture including at least an inorganic filler and a thermosetting resin of the core layer has a modulus of elasticity at room temperature in the range from 0.6 GPa to 10 GPa. Thus, it is possible to provide a thermal conductive component built-in module capable of filling the inorganic filler with high density; burying the active component such as a semiconductor etc. and the passive component such as a chip resistor, a chip capacitor, etc. in the internal portion of the substrate; and simply producing a multilayer wiring structure.
Abstract:
A circuit component built-in module includes: a first electrical insulating substrate made of a mixture containing an inorganic filler and a thermosetting resin; a plurality of wiring patterns formed at least on a principal surface of the first electrical insulating substrate; a semiconductor chip incorporated in the first electrical insulating substrate and connected electrically with the wiring patterns; and inner vias electrically connecting the plurality of wiring patterns with one another, the inner vias passing through the first electrical insulating substrate. In the circuit component built-in module, the semiconductor chip has a thickness of not less than 30 nullm and not more than 100 nullm, and has a non-wired surface ground, and the circuit component built-in module has a thickness in a range of not less than 80 nullm and not more than 200 nullm. With this configuration, the high-performance and compact-size circuit component built-in module in which circuit components are mounted at a high density is provided so as to be used suitably in various types of electronic information devices.
Abstract:
A semiconductor device (1) of the present invention includes a semiconductor element (103) including electrode parts (104), and a wiring substrate (108) including an insulation layer (101), electrode-part-connection electrodes (102) provided in the insulation layer (101), and external electrodes (107) that is provided in the insulation layer (101) and that is connected electrically with the electrode-part-connection electrodes (102), in which the electrode parts (104) and the electrode-part-connection electrodes (102) are connected electrically with each other. The insulation layer (101) has an elastic modulus measured according to JIS K6911 of not less than 0.1 GP a and not more than 5 GPa, and the electrodes (104) and the electrode-part-connection electrodes (102) are connected by metal joint.
Abstract:
A semiconductor built-in millimeter-wave band module includes: an insulating substrate made of a mixture containing an inorganic filler and a thermosetting resin; a high thermal conductivity substrate made of a dielectric material having thermal conductivity higher than the insulating substrate and laminated on one surface of the insulating substrate; a plurality of wiring patterns formed on the high thermal conductivity substrate and the insulating substrate; a semiconductor device operating at millimeter-wave band, which is arranged inside of the insulating substrate, is packaged on the high thermal conductivity substrate in a face-up manner, and is connected electrically with the wiring patterns; and a distributed constant circuit element and an active element provided on the semiconductor device. In this module, a void is provided inside of the insulating substrate and in the vicinity of a surface of the distributed constant circuit element and the active element. With this configuration, heat from the semiconductor device operating at a millimeter-wave band can be dissipated effectively and the semiconductor and other circuit components can be packaged with high density.
Abstract:
A circuit component built-in module capable of mounting the circuit component with high density and having high heat releasing property and the high reliability. The circuit component built-in module 100 includes the insulating substrate 101 made of a first mixture 105 and a second mixture 106, wiring patterns 102a and 102b formed on one principal surface and another principal surface of the insulating substrate 101, a circuit component 103a electrically connected to the wiring pattern 102a and sealed with the second mixture 106 in an internal portion of the insulating substrate 101, the inner via conductor 104 electrically connecting the wiring pattern 102a and 102b.
Abstract:
A transfer material capable of transferring a fine wiring pattern to a substrate reliably and easily. The transfer material includes at least three layers of a first metal layer as a carrier, a second metal layer that is transferred to the substrate as a wiring pattern, and a peel layer adhering the first and second metal layers releasably. On the surface portion of the first metal layer, a concave and convex portion corresponding to the wiring pattern is formed, and the peel layer and the second metal layer are formed on a region of the convex portions.