公开(公告)号：US20170372870A1

公开(公告)日：2017-12-28

申请号：US15650164

申请日：2017-07-14

Applicant: Mattson Technology, Inc.

Inventor： Valery A. Godyak ,  Charles Crapuchettes ,  Vladimir Nagorny

IPC: H01J37/32 ,  H05H1/46

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/32137 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32449 ,  H01J37/32651 ,  H05H1/46 ,  H05H2001/4652

Abstract: Methods and apparatus to provide efficient and scalable RF inductive plasma processing are disclosed. In some aspects, the coupling between an inductive RF energy applicator and plasma and/or the spatial definition of power transfer from the applicator are greatly enhanced. The disclosed methods and apparatus thereby achieve high electrical efficiency, reduce parasitic capacitive coupling, and/or enhance processing uniformity. Various embodiments comprise a plasma processing apparatus having a processing chamber bounded by walls, a substrate holder disposed in the processing chamber, and an inductive RF energy applicator external to a wall of the chamber. The inductive RF energy applicator comprises one or more radiofrequency inductive coupling elements (ICEs). Each inductive coupling element has a magnetic concentrator in close proximity to a thin dielectric window on the applicator wall.

公开(公告)号：US20210398775A1

公开(公告)日：2021-12-23

申请号：US17387393

申请日：2021-07-28

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Shawming Ma ,  Vladimir Nagorny ,  Dixit V. Desai ,  Ryan M. Pakulski

IPC: H01J37/32 ,  G03F7/42

Abstract: Plasma processing apparatus for processing a workpiece are provided. In one example embodiments, a plasma processing apparatus for processing workpiece includes a processing chamber, a plasma chamber separated from the processing chamber by a separation grid, an inductively coupled plasma source configured to generate a plasma in the plasma chamber, and a gas injection insert arranged in the plasma chamber having a peripheral portion and a center portion, the center portion extends a vertical distance past the peripheral portion. The apparatus includes a pedestal disposed within the processing chamber configured to support a workpiece, a first gas injection zone configured to inject a process gas into the process chamber at a first flat surface, and a second gas injection zone configured to inject a process gas into the process chamber at a second flat surface. The separation grid has a plurality of holes configured to allow the passage of neutral particles generated in the plasma to the processing chamber.

公开(公告)号：US11201036B2

公开(公告)日：2021-12-14

申请号：US15888257

申请日：2018-02-05

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Shawming Ma ,  Vladimir Nagorny ,  Dixit V. Desai ,  Ryan Pakulski

IPC: H01J37/32 ,  H01L21/67

Abstract: Plasma strip tools with process uniformity control are provided. In one example implementation, a plasma processing apparatus includes a processing chamber, a first pedestal in the processing chamber operable to support a workpiece, and a second pedestal in the processing chamber operable to support another workpiece. The first pedestal can define a first processing station. The second pedestal can define a second processing station. The apparatus can further include a first plasma chamber disposed above the first processing station and a second plasma chamber disposed above the second processing station. The first plasma chamber can be associated with a first inductive plasma source. The first plasma chamber can be separated from the processing chamber by a first separation grid. The second plasma chamber can be associated with a second inductive plasma source. The second plasma chamber can be separated from the processing chamber by a second separation grid.

公开(公告)号：US20210005431A1

公开(公告)日：2021-01-07

申请号：US17026401

申请日：2020-09-21

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Shawming Ma ,  Vladimir Nagorny ,  Dixit V. Desai ,  Ryan Pakulski

IPC: H01J37/32 ,  H01L21/67 ,  B08B7/00 ,  H01L21/02 ,  H01L21/311

Abstract: Plasma processing with post plasma gas injection is provided. In one example implementation, a plasma processing apparatus includes a plasma chamber. The apparatus includes a processing chamber separated from the plasma chamber. The processing chamber includes a substrate holder operable to support a workpiece. The apparatus includes a plasma source configured to generate a plasma in the plasma chamber. The apparatus includes a separation grid separating the plasma chamber from the processing chamber. The separation grid can be configured to filter one or more ions generated in the plasma and allow the passage of neutral particles from the plasma chamber to the processing chamber. The apparatus can include at least one gas port configured to inject a gas into neutral particles passing through the separation grid.

公开(公告)号：US20180358208A1

公开(公告)日：2018-12-13

申请号：US15851922

申请日：2017-12-22

Applicant: Mattson Technology, Inc.

Inventor： Shawming Ma ,  Vladimir Nagorny ,  Dixit V. Desai ,  Ryan Pakulski

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/02 ,  B08B7/00

Abstract: Plasma processing with post plasma gas injection is provided. In one example implementation, a plasma processing apparatus includes a plasma chamber. The apparatus includes a processing chamber separated from the plasma chamber. The processing chamber includes a substrate holder operable to support a workpiece. The apparatus includes a plasma source configured to generate a plasma in the plasma chamber. The apparatus includes a separation grid separating the plasma chamber from the processing chamber. The separation grid can be configured to filter one or more ions generated in the plasma and allow the passage of neutral particles from the plasma chamber to the processing chamber. The apparatus can include at least one gas port configured to inject a gas into neutral particles passing through the separation grid.

公开(公告)号：US20180358206A1

公开(公告)日：2018-12-13

申请号：US15888283

申请日：2018-02-05

Applicant: Mattson Technology, Inc.

Inventor： Shawming Ma ,  Vladimir Nagorny ,  Dixit V. Desai ,  Ryan Pakulski

IPC: H01J37/32 ,  G03F7/42 ,  B08B5/00

CPC classification number: H01J37/32357 ,  B08B5/00 ,  G03F7/427 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32651

Abstract: Plasma processing apparatus are provided. In one example implementation, a plasma processing apparatus includes a processing chamber. The apparatus includes a pedestal operable to support a workpiece in the processing chamber. The apparatus includes a plasma chamber. The plasma chamber defines an active plasma generation region along a vertical surface of a dielectric sidewall of the plasma chamber. The apparatus includes a separation grid positioned between the processing chamber and the plasma chamber along a vertical direction. The apparatus includes a plurality of induction coils extending about the plasma chamber. Each of the plurality of induction coils can be disposed at a different position along the vertical direction. Each of the plurality of induction coils can be operable to generate a plasma in the active plasma generation region along the vertical surface of the dielectric sidewall of the plasma chamber.

公开(公告)号：US20160276230A1

公开(公告)日：2016-09-22

申请号：US15073048

申请日：2016-03-17

Applicant: Mattson Technology, Inc.

Inventor： Vladimir Nagorny

IPC: H01L21/66 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32174

Abstract: Apparatus, systems, and methods for controlling azimuthal uniformity of an etch process in a plasma processing chamber are provided. In one embodiment, a plasma processing apparatus can include a plasma processing chamber and an RF cage disposed above the plasma processing chamber. A dielectric window can separate the plasma processing chamber and the RF cage. The apparatus can include a plasma generating coil disposed above the dielectric window. The plasma generating coil can be operable to generate an inductively coupled plasma in the plasma processing chamber when energized. The apparatus further includes a conductive surface disposed within the RF cage proximate to at least a portion of the plasma generating coil. The conductive surface is arranged to generate an azimuthally variable inductive coupling between the conductive surface and the plasma generating coil when the plasma generating coil is energized.

Abstract translation: 提供了用于控制等离子体处理室中的蚀刻工艺的方位均匀性的装置，系统和方法。 在一个实施例中，等离子体处理装置可以包括等离子体处理室和设置在等离子体处理室上方的RF笼。 电介质窗口可以分离等离子体处理室和RF笼。 该装置可以包括设置在电介质窗口上方的等离子体产生线圈。 等离子体产生线圈可用于在通电时在等离子体处理室中产生电感耦合等离子体。 该装置还包括设置在RF笼内靠近等离子体产生线圈的至少一部分的导电表面。 导电表面布置成当等离子体产生线圈通电时，在导电表面和等离子体产生线圈之间产生方位可变的感应耦合。