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    Inductively Coupled Plasma Source for Plasma Processing
    2.
    发明申请
    Inductively Coupled Plasma Source for Plasma Processing 审中-公开

    公开(公告)号：US20170243721A1

    公开(公告)日：2017-08-24

    申请号：US15589127

    申请日：2017-05-08

    Applicant: Mattson Technology, Inc.

    Inventor： Vladimir Nagorny ,  Dongsoo Lee ,  Andreas Kadavanich

    IPC: H01J37/32

    CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32119 ,  H01J37/32449 ,  H01J37/32651 ,  H01J37/32669 ,  H01J37/32715 ,  H01J2237/334

    Abstract: Plasma processing apparatus and methods are disclosed. Embodiments of the present disclosure include a processing chamber having an interior space operable to receive a process gas, a substrate holder in the interior of the processing chamber operable to hold a substrate, and at least one dielectric window. A metal shield is disposed adjacent the dielectric window. The metal shield can have a peripheral portion and a central portion. The processing apparatus includes a primary inductive element disposed external to the processing chamber adjacent the peripheral portion of the metal shield. The processing apparatus can further include a secondary inductive element disposed between the central portion of the metal shield and the dielectric window. The primary and secondary inductive elements can perform different functions, can have different structural configurations, and can be operated at different frequencies.

    Plasma Strip Tool With Uniformity Control
    4.
    发明申请
    Plasma Strip Tool With Uniformity Control 审中-公开

    公开(公告)号：US20180358210A1

    公开(公告)日：2018-12-13

    申请号：US15888257

    申请日：2018-02-05

    Applicant: Mattson Technology, Inc.

    Inventor： Shawming Ma ,  Vladimir Nagorny ,  Dixit V. Desai ,  Ryan Pakulski

    IPC: H01J37/32 ,  H01L21/67

    CPC classification number: H01J37/32522 ,  H01J37/321 ,  H01J37/32422 ,  H01J37/32715 ,  H01J37/32816 ,  H01J37/32899 ,  H01J2237/002 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67207

    Abstract: Plasma strip tools with process uniformity control are provided. In one example implementation, a plasma processing apparatus includes a processing chamber. The apparatus includes a first pedestal in the processing chamber operable to support a workpiece. The first pedestal can define a first processing station. The plasma processing apparatus can include a second pedestal in the processing chamber operable to support a workpiece. The second pedestal can define a second processing station. The apparatus can include a first plasma chamber disposed above the first processing station. The first plasma chamber can be associated with a first inductive plasma source. The first plasma chamber can be separated from the processing chamber by a first separation grid. The apparatus can include a second plasma chamber disposed above the second processing station. The second plasma chamber can be associated with a second inductive plasma source. The second plasma chamber can be separated from the processing chamber by a second separation grid.

    Plasma Strip Tool With Multiple Gas Injection Zones
    5.
    发明申请
    Plasma Strip Tool With Multiple Gas Injection Zones 审中-公开

    公开(公告)号：US20180358204A1

    公开(公告)日：2018-12-13

    申请号：US15892723

    申请日：2018-02-09

    Applicant: Mattson Technology, Inc.

    Inventor： Shawming Ma ,  Vladimir Nagorny ,  Dixit V. Desai ,  Ryan M. Pakulski

    IPC: H01J37/32 ,  G03F7/42

    CPC classification number: H01J37/3244 ,  B08B5/00 ,  G03F7/427 ,  H01J37/32357 ,  H01J37/32422

    Abstract: Plasma processing apparatus for processing a workpiece are provided. In one example embodiment, a plasma processing apparatus for processing workpiece includes a processing chamber, a plasma chamber separated from the processing chamber by a separation grid, an inductively coupled plasma source configured to generate a plasma in the plasma chamber. The apparatus includes a pedestal disposed within the processing chamber configured to support a workpiece. The apparatus a first gas injection zone configured to inject a process gas into the plasma chamber at a first flat surface, and a second gas injection zone configured to inject a process gas into the plasma chamber at a second flat surface. The separation grid has a plurality of holes configured to allow the passage of neutral particles generated in the plasma to the processing chamber.

    System and method for protection of vacuum seals in plasma processing systems
    6.
    发明授权
    System and method for protection of vacuum seals in plasma processing systems 有权

    公开(公告)号：US10049858B2

    公开(公告)日：2018-08-14

    申请号：US14771525

    申请日：2014-05-09

    Applicant: Mattson Technology, Inc.

    Inventor： Vladimir Nagorny ,  Steven Parks ,  Martin Zucker

    IPC: H01J37/32

    Abstract: Systems and methods for protecting vacuum seals in a plasma processing system are provided. The processing system can include a vacuum chamber defining a sidewall and an inductive coil wrapped around at least a portion of the sidewall. A vacuum seal can be positioned between the sidewall of the vacuum chamber and a heat sink. A thermally conductive bridge can be coupled between the sidewall and heat sink. Further, the thermally conductive bridge can be positioned relative to the vacuum seal such that the thermally conductive bridge redirects a conductive heat path from the sidewall or any heat source to the heat sink so that the heat path bypasses the vacuum seal.

    System and Method for Protection of Vacuum Seals in Plasma Processing Systems
    7.
    发明申请
    System and Method for Protection of Vacuum Seals in Plasma Processing Systems 审中-公开
    等离子体处理系统中真空密封保护的系统和方法

    公开(公告)号：US20160013025A1

    公开(公告)日：2016-01-14

    申请号：US14771525

    申请日：2014-05-09

    Applicant: MATTSON TECHNOLOGY, INC.

    Inventor： Vladimir Nagorny ,  Steven Parks ,  Martin Zucker

    IPC: H01J37/32

    CPC classification number: H01J37/32513 ,  H01J37/321 ,  H01J37/32522 ,  H01J2237/166

    Abstract: Systems and methods for protecting vacuum seals in a plasma processing system are provided. The processing system can include a vacuum chamber defining a sidewall and an inductive coil wrapped around at least a portion of the sidewall. A vacuum seal can be positioned between the sidewall of the vacuum chamber and a heat sink. A thermally conductive bridge can be coupled between the sidewall and heat sink. Further, the thermally conductive bridge can be positioned relative to the vacuum seal such that the thermally conductive bridge redirects a conductive heat path from the sidewall or any heat source to the heat sink so that the heat path bypasses the vacuum seal.

    Abstract translation: 提供了一种在等离子体处理系统中保护真空密封的系统和方法。 处理系统可以包括限定侧壁的真空室和缠绕在侧壁的至少一部分上的感应线圈。 真空密封件可以位于真空室的侧壁和散热器之间。 导热桥可以耦合在侧壁和散热器之间。 此外，导热桥可以相对于真空密封件定位，使得导热桥将导向热路径从侧壁或任何热源重定向到散热器，使得热路径绕过真空密封。

    Plasma processing apparatus with post plasma gas injection
    8.
    发明授权
    Plasma processing apparatus with post plasma gas injection 有权

    公开(公告)号：US10790119B2

    公开(公告)日：2020-09-29

    申请号：US15851922

    申请日：2017-12-22

    Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

    Inventor： Shawming Ma ,  Vladimir Nagorny ,  Dixit V. Desai ,  Ryan Pakulski

    IPC: H01L21/311 ,  H01J37/32 ,  H01L21/67 ,  B08B7/00 ,  H01L21/02

    Abstract: Plasma processing with post plasma gas injection is provided. In one example implementation, a plasma processing apparatus includes a plasma chamber. The apparatus includes a processing chamber separated from the plasma chamber. The processing chamber includes a substrate holder operable to support a workpiece. The apparatus includes a plasma source configured to generate a plasma in the plasma chamber. The apparatus includes a separation grid separating the plasma chamber from the processing chamber. The separation grid can be configured to filter one or more ions generated in the plasma and allow the passage of neutral particles from the plasma chamber to the processing chamber. The apparatus can include at least one gas port configured to inject a gas into neutral particles passing through the separation grid.

    Controlling Azimuthal Uniformity of Etch Process in Plasma Processing Chamber
    9.
    发明申请
    Controlling Azimuthal Uniformity of Etch Process in Plasma Processing Chamber 审中-公开

    公开(公告)号：US20190244825A1

    公开(公告)日：2019-08-08

    申请号：US16386557

    申请日：2019-04-17

    Applicant: Mattson Technology, Inc.

    Inventor： Vladimir Nagorny

    IPC: H01L21/3065 ,  H01J37/32

    CPC classification number: H01L21/3065 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32174 ,  H01J37/32651

    Abstract: Apparatus, systems, and methods for controlling azimuthal uniformity of an etch process in a plasma processing chamber are provided. In one embodiment, a plasma processing apparatus can include a plasma processing chamber and an RF cage disposed above the plasma processing chamber. A dielectric window can separate the plasma processing chamber and the RF cage. The apparatus can include a plasma generating coil disposed above the dielectric window. The plasma generating coil can be operable to generate an inductively coupled plasma in the plasma processing chamber when energized. The apparatus further includes a conductive surface disposed within the RF cage proximate to at least a portion of the plasma generating coil. The conductive surface is arranged to generate an azimuthally variable inductive coupling between the conductive surface and the plasma generating coil when the plasma generating coil is energized.

    Controlling azimuthal uniformity of etch process in plasma processing chamber
    10.
    发明授权
    Controlling azimuthal uniformity of etch process in plasma processing chamber 有权

    公开(公告)号：US10297457B2

    公开(公告)日：2019-05-21

    申请号：US15073048

    申请日：2016-03-17

    Applicant: Mattson Technology, Inc.

    Inventor： Vladimir Nagorny

    IPC: C23C16/00 ,  H01L21/306 ,  H01L21/3065 ,  H01J37/32

    Abstract: Apparatus, systems, and methods for controlling azimuthal uniformity of an etch process in a plasma processing chamber are provided. In one embodiment, a plasma processing apparatus can include a plasma processing chamber and an RF cage disposed above the plasma processing chamber. A dielectric window can separate the plasma processing chamber and the RF cage. The apparatus can include a plasma generating coil disposed above the dielectric window. The plasma generating coil can be operable to generate an inductively coupled plasma in the plasma processing chamber when energized. The apparatus further includes a conductive surface disposed within the RF cage proximate to at least a portion of the plasma generating coil. The conductive surface is arranged to generate an azimuthally variable inductive coupling between the conductive surface and the plasma generating coil when the plasma generating coil is energized.

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