公开(公告)号：US20220365845A1

公开(公告)日：2022-11-17

申请号：US17732289

申请日：2022-04-28

Applicant: Micron Technology, Inc.

Inventor： Steffen Buch ,  Thomas Hein

IPC: G06F11/10 ,  G06F11/07

Abstract: Methods, systems, and devices for memory operations are described. A first code for detecting one or more errors in a first set of bits of data and a second code for detecting one or more errors in a second set of bits of data may be generated. The first set of bits and the second set of bits may be transmitted over a channel between a memory device and a host device in an interleaved pattern. The first code and the second code may also be transmitted over the channel. The first set of bits and the second set of bits may be deinterleaved by the receiving device. The first set of bits and the second set of bits may also be processed by the receiving device using the first code and the second code.

公开(公告)号：US20220334915A1

公开(公告)日：2022-10-20

申请号：US17857700

申请日：2022-07-05

Applicant: Micron Technology, Inc.

Inventor： Martin Brox ,  Peter Mayer ,  Wolfgang Anton Spirkl ,  Thomas Hein ,  Michael Dieter Richter ,  Timothy M. Hollis ,  Roy E. Greeff

IPC: G06F11/10 ,  G06F11/16 ,  G06F12/02

Abstract: Methods, systems, and devices for channel modulation for a memory device are described. A system may include a memory device and a host device coupled with the memory device. The system may be configured to communicate a first signal modulated using a first modulation scheme and communicate a second signal that is based on the first signal and that is modulated using a second modulation scheme. The first modulation scheme may include a first quantity of voltage levels that span a first range of voltages, and the second modulation scheme may include a second quantity of voltage levels that span a second range of voltages different than (e.g., smaller than) the first range of voltages. The first signal may include write data carried over a data channel, and the second signal may include error detection information based on the write data that is carried over an error detection channel.

公开(公告)号：US11409595B2

公开(公告)日：2022-08-09

申请号：US16744025

申请日：2020-01-15

Applicant: Micron Technology, Inc.

Inventor： Martin Brox ,  Peter Mayer ,  Wolfgang Anton Spirkl ,  Thomas Hein ,  Michael Dieter Richter ,  Timothy M. Hollis ,  Roy E. Greeff

IPC: G06F11/00 ,  H03M13/00 ,  G06F11/10 ,  G06F11/16 ,  G06F12/02

Abstract: Methods, systems, and devices for channel modulation for a memory device are described. A system may include a memory device and a host device coupled with the memory device. The system may be configured to communicate a first signal modulated using a first modulation scheme and communicate a second signal that is based on the first signal and that is modulated using a second modulation scheme. The first modulation scheme may include a first quantity of voltage levels that span a first range of voltages, and the second modulation scheme may include a second quantity of voltage levels that span a second range of voltages different than (e.g., smaller than) the first range of voltages. The first signal may include write data carried over a data channel, and the second signal may include error detection information based on the write data that is carried over an error detection channel.

公开(公告)号：US20220206705A1

公开(公告)日：2022-06-30

申请号：US17697509

申请日：2022-03-17

Applicant: Micron Technology, Inc.

Inventor： Peter Mayer ,  Thomas Hein ,  Wolfgang Anton Spirkl ,  Martin Brox ,  Michael Dieter Richter

IPC: G06F3/06 ,  G11C11/4074 ,  G11C7/04

Abstract: Methods, systems, and devices for temperature-based memory management are described. A system may include a memory device and a host device. The host device may identify a temperature (e.g., of the memory device). The host device may determine a value for a parameter for operating the memory device—such as a timing, voltage, or frequency parameter—based on the temperature of the memory device. The host device may transmit signaling to the memory device or another component of the system based on the value of the parameter. In some cases, the host device may determine the temperature of the memory device based on an indication (e.g., provided by the memory device). In some cases, the host device may determine the temperature of the memory device based on a temperature of the host device or a temperature of another component of the system.

公开(公告)号：US11276443B2

公开(公告)日：2022-03-15

申请号：US16601439

申请日：2019-10-14

Applicant: Micron Technology, Inc.

Inventor： Martin Brox ,  Wolfgang Anton Spirkl ,  Thomas Hein ,  Michael Dieter Richter ,  Peter Mayer

IPC: G11C7/22 ,  G11C7/14 ,  G11C7/10 ,  G11C5/14 ,  G06F13/40

Abstract: Systems, methods, and apparatuses for offset cancellation are described. A memory device may determine that a channel is in a state that interrupts an active termination of the channel and enable the calibration of a reference voltage (e.g., by the memory device). For example, a channel used for data communications with a second device (e.g., a controller) may initially be in a state of active termination. The memory device may determine that the channel has transitioned to another state that interrupts the active termination. While the channel is in the other state, the memory device may calibrate a reference voltage of a receiver by transmitting calibration signals on the channel and detecting an offset associated with a reference voltage. The memory device may use the detected offset and the reference voltage to identify signals transmitted to the memory device over the channel.

公开(公告)号：US20220012122A1

公开(公告)日：2022-01-13

申请号：US17486751

申请日：2021-09-27

Applicant: Micron Technology, Inc.

Inventor： Michael Dieter Richter ,  Thomas Hein ,  Wolfgang Anton Spirkl ,  Martin Brox ,  Peter Mayer

IPC: G06F11/10 ,  G01K1/024

Abstract: Methods, systems, and devices for error detection, error correction, and error management by memory devices are described. Programmable thresholds may be configured for a memory device based on a type of data or a location of stored data, among other aspects. For example, a host device may configure a threshold quantity of errors for data at a memory device. When retrieving the data, the memory device may track or count errors in the data and determine whether the threshold has been satisfied. The memory device may transmit (e.g., to the host device) an indication whether the threshold has been satisfied, and the system may perform functions to correct the errors and/or prevent further errors. The memory device may also identify errors in received commands or may identify errors introduced in data after the data was received (e.g., using an error detecting code associated with a command or bus).

公开(公告)号：US20220004466A1

公开(公告)日：2022-01-06

申请号：US17376728

申请日：2021-07-15

Applicant: Micron Technology, Inc.

Inventor： Michael Dieter Richter ,  Thomas Hein ,  Wolfgang Anton Spirkl ,  Martin Brox ,  Peter Mayer

IPC: G06F11/14

Abstract: Methods, systems, and devices for reporting control information errors are described. A state of a memory array may be monitored during operation. After detecting an error (e.g., in received control information), the memory device may enter a first state (e.g., a locked state) and may indicate to a host device that an error was detected, the state of the memory array before the error was detected, and/or at least a portion of a control signal carrying the received control information. The host device may diagnose a cause of the error based on receiving the indication of the error and/or the copy of the control signal. After identifying and/or resolving the cause of the error, the host device may transmit one or more commands (e.g., unlocking the memory device and returning the memory array to the original state) based on receiving the original state from the memory device.

公开(公告)号：US20210375738A1

公开(公告)日：2021-12-02

申请号：US17334447

申请日：2021-05-28

Applicant: Micron Technology, Inc.

Inventor： David K. Ovard ,  Thomas Hein ,  Timothy M. Hollis ,  Walter L. Moden

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/31

Abstract: Apparatuses may include a device substrate including a microelectronic device and bond pads proximate to an active surface of the device substrate. A package substrate may be secured to the device substrate, the package substrate configured to route signals to and from the bond pads. A ball grid array may be supported on, and electrically connected to, the package substrate. Each ball positioned and configured to carry a high-bandwidth data signal or a high-frequency clock signal may be located laterally or longitudinally adjacent to no more than one other ball of the ball grid array configured to carry a high-bandwidth data signal or a high-frequency clock signal. Each ball positioned and configured to carry a high-bandwidth data signal may be located only diagonally adjacent to any other balls configured to carry a high-bandwidth data signal or a high-frequency clock signal.

公开(公告)号：US11113212B2

公开(公告)日：2021-09-07

申请号：US16579362

申请日：2019-09-23

Applicant: Micron Technology, Inc.

Inventor： Martin Brox ,  Wolfgang Anton Spirkl ,  Thomas Hein ,  Michael Dieter Richter ,  Peter Mayer

IPC: G06F13/16 ,  G06F13/40 ,  G11C11/4093 ,  G11C11/22

Abstract: Methods, systems, and devices for multi-level receivers with various operating modes (e.g., on-die termination mode, termination-off mode, etc.) are described. Different modes may be utilized for receiving different types of signaling over a channel. Each mode may correspond to the use of a respective set of receivers configured for the different types of signaling. For example, a device may include a first set of receivers used to receive a first type of signal (e.g., with the channel being actively terminated) and a second set of receivers used to receive a second type of signal (e.g., with the channel being non-terminated). When communicating with another device, based on the type of signaling used for communications, either the first set of receivers or the second set of receivers may be enabled (e.g., through selecting a receiver path for the corresponding mode).

公开(公告)号：US20210182141A1

公开(公告)日：2021-06-17

申请号：US17118455

申请日：2020-12-10

Applicant: Micron Technology, Inc.

Inventor： Markus Balb ,  Thomas Hein ,  Heinz Hoenigschmid

IPC: G06F11/07 ,  G06F3/06 ,  G01R31/3177

Abstract: Methods, systems, and devices for memory health status reporting are described. A memory device may output to a host device a parameter value, which may be indicative of metric or condition related to the performance or reliability (e.g., a health status) of the memory device of the memory device. The host device may thereby determine that the memory device is degraded, possibly prior to device or system failure. Based on the parameter value, the host device may take preventative action, such as quarantining the memory device, deactivating the memory device, or swapping the memory device for another memory device.