Abstract:
A first substrate has a plurality of photoelectric conversion units. A second substrate has through vias connected to the first substrate, and a plurality of photoelectric conversion units. A third substrate has vias connected to the second substrate, and a circuit that processes a signal. Wiring lines of the first substrate select the angle of a light ray that is transmitted through the first substrate and enters the second substrate.
Abstract:
A solid-state imaging device includes: a pixel unit in which pixels each including a photoelectric conversion element are arrayed in a matrix form; a column circuit unit that includes a plurality of column processing circuits which are disposed in correspondence with columns of the pixels in the pixel unit; and an output unit that outputs a signal processed by the column processing circuit to the outside of the solid-state imaging device. The pixel unit is disposed in the 1st substrate. The column circuit unit is disposed in each of at least two or more different substrates of the 1st to nth substrates. The signal processing corresponding to the pixel of each column in the pixel unit is performed in a distributive manner by the column circuit units disposed in at least the two or more different substrates.
Abstract:
A solid-state imaging device includes a first substrate and a second substrate electrically connected to the first substrate. The first substrate includes a first semiconductor layer and one or more first wiring layers. The second substrate includes a second semiconductor layer and one or more second wiring layers. The first photoelectric conversion element overlaps any of the one or more first wiring layers at all positions on the first photoelectric conversion element in a planar view of the first substrate. The second photoelectric conversion element does not overlap any of the one or more first wiring layers at some positions on the second photoelectric conversion element in the planar view of the first substrate.
Abstract:
A solid-state image capture device includes a plurality of pixels and a first substrate and a second substrate in which circuit elements constitutes the pixels are disposed and which are electrically connected by a connection unit. The pixels includes: photoelectric conversion elements disposed in the first substrate and generating signals corresponding to amounts of incident light; sample hold capacities disposed in the second substrate and holding output signals corresponding to the signals generated by the photoelectric conversion elements; and a clamp capacitor disposed in the second substrate, shared by the plurality of pixels, and clamping voltages of the output signals held in the plurality of sample hold capacities. The sample hold capacities and the clamp capacitor are capacities having a structure in which two sheets of metal electrodes having a quadrangular flat plate shape are opposite to each other.
Abstract:
A solid-state imaging device includes: a pixel unit in which pixels each including a photoelectric conversion element are arrayed in a matrix form; a column circuit unit that includes a plurality of column processing circuits which are disposed in correspondence with columns of the pixels in the pixel unit; and an output unit that outputs a signal processed by the column processing circuit to the outside of the solid-state imaging device. The pixel unit is disposed in the 1st substrate. The column circuit unit is disposed in each of at least two or more different substrates of the 1st to nth substrates. The signal processing corresponding to the pixel of each column in the pixel unit is performed in a distributive manner by the column circuit units disposed in at least the two or more different substrates.
Abstract:
A first substrate has a plurality of photoelectric conversion units. A second substrate has through vias connected to the first substrate, and a plurality of photoelectric conversion units. A third substrate has vias connected to the second substrate, and a circuit that processes a signal. Wiring lines of the first substrate select the angle of a light ray that is transmitted through the first substrate and enters the second substrate.
Abstract:
A solid-state imaging device includes a first substrate, a second substrate, a plurality of first connectors, and a plurality of second connectors. The plurality of first connectors are configured to transmit a first signal. The plurality of second connectors are configured to transmit a second signal. The first signal has at least two levels, and the levels of the first signal discretely vary between the at least two levels. The second signal is a continuous time signal. A first area of a first region is smaller than a second area of a second region. The first region is a projection region of each of the plurality of first connectors in a principal surface of the first substrate. The second region is a projection region of each of the plurality of second connectors in the principal surface.
Abstract:
A first substrate has a plurality of photoelectric conversion units arranged in two dimensions. A second substrate has a plurality of photoelectric conversion units arranged in two dimensions. A plurality of photoelectric conversion units are arranged in a region of the second substrate corresponding to a region of the first substrate where one photoelectric conversion unit is arranged. The imaging signals based on signal charges stored in the photoelectric conversion units and the light field signals based on signal charges stored in the photoelectric conversion units are read.