Hybrid optical source with semiconductor reflector
    11.
    发明授权
    Hybrid optical source with semiconductor reflector 有权
    具有半导体反射器的混合光源

    公开(公告)号:US08988770B2

    公开(公告)日:2015-03-24

    申请号:US13831541

    申请日:2013-03-14

    Abstract: A hybrid optical source that provides an optical signal having a wavelength is described. This hybrid optical source includes an edge-coupled optical amplifier (such as a III-V semiconductor optical amplifier) aligned to a semiconductor reflector (such as an etched silicon mirror). The semiconductor reflector efficiently couples (i.e., with low optical loss) light out of the optical amplifier in a direction approximately perpendicular to a plane of the optical amplifier. A corresponding optical coupler (such as a diffraction grating or a mirror) fabricated on a silicon-on-insulator chip efficiently couples the light into a sub-micron silicon-on-insulator optical waveguide. The silicon-on-insulator optical waveguide couples the light to additional photonic elements (including a reflector) to complete the hybrid optical source.

    Abstract translation: 描述了提供具有波长的光信号的混合光源。 该混合光源包括与半导体反射器(例如蚀刻硅镜)对准的边缘耦合光放大器(例如III-V半导体光放大器)。 半导体反射器在大致垂直于光放大器的平面的方向上有效地耦合(即,具有低光损耗)的光从光放大器中出射。 制造在绝缘体上硅芯片上的对应的光耦合器(例如衍射光栅或反射镜)有效地将光耦合到亚微米上绝缘体上的光波导中。 绝缘体上的光波导将光耦合到附加的光子元件(包括反射器)以完成混合光源。

    WAVELENGTH-LOCKING A RING-RESONATOR FILTER
    13.
    发明申请
    WAVELENGTH-LOCKING A RING-RESONATOR FILTER 有权
    波长锁定环形谐振器滤波器

    公开(公告)号:US20150277053A1

    公开(公告)日:2015-10-01

    申请号:US14203876

    申请日:2014-03-11

    CPC classification number: G02B6/29341 G02B6/2852 G02F1/3132 H04J14/00

    Abstract: In an optical device, a ring resonator, having a resonance wavelength, optically couples an optical signal that includes a wavelength from an input optical waveguide to an output optical waveguide. A monitoring mechanism in the optical device, which is optically coupled to the output optical waveguide, monitors an output optical signal on the output optical waveguide. For example, the monitoring mechanism may dither a temperature of the ring resonator at a frequency using a heater, and the output optical signal may be monitored by determining amplitude and phase information of the output optical signal at the frequency and twice the frequency. Moreover, control logic in the optical device adjusts the resonance wavelength based on the monitored output optical signal, where the adjustment is made without monitoring an input optical signal on the input optical waveguide.

    Abstract translation: 在光学装置中,具有谐振波长的环形谐振器将包括来自输入光波导的波长的光信号光耦合到输出光波导。 光学装置中的光耦合到输出光波导的监视机构监视输出光波导上的输出光信号。 例如,监视机构可以使用加热器将环形谐振器的温度以一定的频率进行抖动,并且可以通过确定频率和频率两倍的输出光信号的幅度和相位信息来监视输出光信号。 此外,光学装置中的控制逻辑基于所监视的输出光信号来调节谐振波长,其中在不监视输入光波导上的输入光信号的情况下进行调整。

    ENHANCED OPTICAL MODULATION USING SLOW LIGHT
    14.
    发明申请
    ENHANCED OPTICAL MODULATION USING SLOW LIGHT 有权
    使用慢光增强光学调制

    公开(公告)号:US20150086219A1

    公开(公告)日:2015-03-26

    申请号:US14036964

    申请日:2013-09-25

    CPC classification number: G02F1/2257 G02B6/1225 G02F2001/212 G02F2202/32

    Abstract: A photonic integrated circuit (PIC) is described. This PIC includes a semiconductor-barrier layer-semiconductor diode in an optical waveguide that conveys an optical signal, where the barrier layer is an oxide or a high-k material. Moreover, semiconductor layers in the semiconductor-barrier layer-semiconductor diode may include geometric features (such as a periodic pattern of holes or trenches) that create a lattice-shifted photonic crystal optical waveguide having a group velocity of light that is lower than the group velocity of light in the first semiconductor layer and the second semiconductor layer without the geometric features. The optical waveguide is included in an optical modulator, such as a Mach-Zehnder interferometer (MZI).

    Abstract translation: 描述了一种光子集成电路(PIC)。 该PIC包括传输光信号的光波导中的半导体阻挡层 - 半导体二极管,其中阻挡层是氧化物或高k材料。 此外,半导体阻挡层 - 半导体二极管中的半导体层可以包括几何特征(例如空穴或沟槽的周期性图案),其产生具有低于组的光速的光子晶体光子晶体光波导 第一半导体层和第二半导体层中的光的速度没有几何特征。 光波导包括在诸如Mach-Zehnder干涉仪(MZI)的光学调制器中。

    Self-registered comb laser source
    15.
    发明授权
    Self-registered comb laser source 有权
    自注册梳状激光源

    公开(公告)号:US08969788B2

    公开(公告)日:2015-03-03

    申请号:US13717339

    申请日:2012-12-17

    Abstract: An integrated optical source is described. This optical source outputs one or more optical signals that provide a comb of wavelengths for use in wavelength-division-multiplexing (WDM) optical interconnects or links. In particular, a shared echelle grating is used as a wavelength-selective filter or control device for multiple lasing cavities to achieve self-registered and accurate lasing-channel spacing without inter-channel gain competition. Furthermore, the optical source can be used to provide all the wavelength channels in one optical waveguide or in separate optical waveguides. Therefore, the optical source may be used with cascaded ring-resonator modulators and/or electro-absorption-based broadband modulators.

    Abstract translation: 描述了集成光源。 该光源输出提供用于波分复用(WDM)光互连或链路的波长梳的一个或多个光信号。 特别地,共享梯形光栅被用作用于多个激光腔的波长选择滤波器或控制装置,以实现自注册和精确的激光信道间隔,而不需要信道间增益竞争。 此外,光源可用于在一个光波导中或在单独的光波导中提供所有波长信道。 因此,光源可以与级联的环形谐振器调制器和/或基于电吸收的宽带调制器一起使用。

    HYBRID INTEGRATION OF EDGE-COUPLED CHIPS
    17.
    发明申请
    HYBRID INTEGRATION OF EDGE-COUPLED CHIPS 有权
    边缘耦合杂交的混合整合

    公开(公告)号:US20160170158A1

    公开(公告)日:2016-06-16

    申请号:US14060136

    申请日:2013-10-22

    CPC classification number: G02B6/4224 G02B6/00 G02B6/14

    Abstract: A technique for fabricating a hybrid optical source is described. During this fabrication technique, a III-V compound-semiconductor active gain medium is integrated with a silicon-on-insulator (SOI) chip (or wafer) using edge coupling to form a co-planar hybrid optical source. Using a backside etch-assisted cleaving technique, and a temporary transparent substrate with alignment markers, a III-V compound-semiconductor chip with proper edge polish and coating can be integrated with a processed SOI chip (or wafer) with accurate alignment. This fabrication technique may significantly reduce the alignment complexity when fabricating the hybrid optical source, and may enable wafer-scale integration.

    Abstract translation: 描述了一种用于制造混合光源的技术。 在该制造技术中,III-V族化合物 - 半导体有源增益介质使用边缘耦合与绝缘体上硅(SOI)芯片集成,以形成共面混合光源。 使用背面蚀刻辅助切割技术和具有对准标记的临时透明基板,具有适当边缘抛光和涂层的III-V化合物半导体芯片可以与精确对准的经处理的SOI芯片(或晶片)集成。 当制造混合光源时,这种制造技术可以显着降低对准复杂性,并且可以实现晶片级整合。

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