公开(公告)号：US09871346B1

公开(公告)日：2018-01-16

申请号：US15425889

申请日：2017-02-06

Applicant: Oracle International Corporation

Inventor： Jin-Hyoung Lee ,  Xuezhe Zheng ,  Ivan Shubin ,  Jock T. Bovington ,  Ashok V. Krishnamoorthy

IPC: H01S5/00 ,  H01S5/065 ,  H01S5/30 ,  H01S5/125 ,  H01S5/026 ,  H01S5/10 ,  H01S5/14 ,  H01S3/105 ,  H01S5/068 ,  H01S5/02 ,  H01S5/024 ,  H01S5/0687

CPC classification number: H01S5/0687 ,  H01S3/105 ,  H01S5/005 ,  H01S5/021 ,  H01S5/02252 ,  H01S5/02453 ,  H01S5/0612 ,  H01S5/0654 ,  H01S5/06817 ,  H01S5/101 ,  H01S5/1025 ,  H01S5/1085 ,  H01S5/1092 ,  H01S5/142

Abstract: The disclosed embodiments relate to a system that implements a hybrid laser. This system includes a reflective gain medium (RGM) comprising an optical gain material coupled to a mirror. This RGM is coupled to a spot-size converter (SSC), which optically couples the RGM to an optical reflector through a silicon waveguide. The SSC converts an optical mode-field size of the RGM to an optical mode-field size of the silicon waveguide. During operation, the RGM, the spot-size converter, the silicon waveguide and the silicon mirror collectively form a lasing cavity, wherein an effective thermo-optic coefficient (TOC) of a portion of the lasing cavity that passes through the optical gain material and the SSC material is substantially the same as the TOC of silicon. Finally, a laser output is optically coupled out of the lasing cavity.

公开(公告)号：US09470855B1

公开(公告)日：2016-10-18

申请号：US14823962

申请日：2015-08-11

Applicant: Oracle International Corporation

Inventor： Ivan Shubin ,  Xuezhe Zheng ,  Jin-Hyoung Lee ,  Kannan Raj ,  Ashok V. Krishnamoorthy

IPC: G02B6/26 ,  G02B6/42 ,  H01S5/30 ,  G02B6/12

CPC classification number: G02B6/13 ,  G02B6/12 ,  G02B6/4228 ,  G02B6/4239 ,  G02B6/4257 ,  G02B6/43 ,  G02B2006/12061 ,  H01L33/58 ,  H01S5/3013

Abstract: A multi-chip module (MCM) is described. This MCM includes two substrates that are passively self-assembled on another substrate using hydrophilic and hydrophobic materials on facing surfaces of the substrates and liquid surface tension as the restoring force. In particular, regions with a hydrophilic material on the two substrates overlap regions with the hydrophilic material on the other substrate. These regions on the other substrate may be surrounded by a region with a hydrophobic material. In addition, spacers on a surface of at least one of the two substrates may align optical waveguides disposed on the two substrates, so that the optical waveguides are coplanar. This fabrication technique may allow low-loss hybrid optical sources to be fabricated by edge coupling the two substrates. For example, a first of the two substrates may be a III/V compound semiconductor and a second of the two substrates may be a silicon-on-insulator photonic chip.

公开(公告)号：US20160238791A1

公开(公告)日：2016-08-18

申请号：US14625023

申请日：2015-02-18

Applicant: Oracle International Corporation

Inventor： Stevan S. Djordjevic ,  Shiyun Lin ,  Ivan Shubin ,  Xuezhe Zheng ,  John E. Cunningham ,  Ashok V. Krishnamoorthy

IPC: G02B6/293 ,  B01J37/12 ,  B01J37/34 ,  G02B6/13 ,  G02F1/225

CPC classification number: G02B6/29395 ,  G02B6/13 ,  G02B6/2934 ,  G02F1/2257

Abstract: An optical device is described. This optical device includes optical components having resonance wavelengths that match target values with a predefined accuracy (such as 0.1 nm) and with a predefined time stability (such as permanent or an infinite time stability) without thermal tuning and/or electronic tuning. The stable, accurate resonance wavelengths may be achieved using a wafer-scale, single (sub-second) shot trimming technique that permanently corrects the phase errors induced by material variations and fabrication inaccuracies in the optical components (and, more generally, resonant silicon-photonic optical components). In particular, the trimming technique may use photolithographic exposure of the optical components on the wafer in parallel, with time-modulation for each individual optical component based on active-element control. Note that the physical mechanism in the trimming technique may involve superficial room-temperature oxidation of the silicon surface, which is induced by deep-ultraviolet radiation in the presence of oxygen.

Abstract translation: 描述光学装置。 该光学装置包括具有与预定精度（例如0.1nm）匹配的目标值的谐振波长的光学部件，并且具有预定的时间稳定性（例如永久或无限时间稳定性），而不需要热调谐和/或电子调谐。 稳定，准确的共振波长可以使用晶片级单次（亚秒级）拍摄微调技术来实现，该技术永久地校正由光学部件中的材料变化和制造不精确性引起的相位误差（以及更一般地，谐振硅 - 光子学组件）。 特别地，修剪技术可以使用基于有源元件控制的每个单独光学部件的时间调制来并行地对晶片上的光学部件进行光刻曝光。 注意，修整技术中的物理机制可能涉及在氧存在下由深紫外线辐射诱导的硅表面的室温室温氧化。

公开(公告)号：US09812842B2

公开(公告)日：2017-11-07

申请号：US15189598

申请日：2016-06-22

Applicant: Oracle International Corporation

Inventor： Ivan Shubin ,  Xuezhe Zheng ,  Jin Yao ,  Jin-Hyoung Lee ,  Jock T. Bovington ,  Shiyun Lin ,  Ashok V. Krishnamoorthy

IPC: H01S3/08 ,  H01S5/026 ,  H01S5/30 ,  H01S5/12 ,  H01S5/02 ,  H01S5/10 ,  H01S5/022 ,  H01S5/14

CPC classification number: H01S5/14 ,  H01S3/08059 ,  H01S5/02252 ,  H01S5/0228 ,  H01S5/1028 ,  H01S5/1092 ,  H01S5/12 ,  H01S5/141

Abstract: A hybrid optical source comprises an optical gain chip containing an optical gain material that provides an optical signal, and an optical reflector chip including an optical reflector. It also includes a semiconductor-on-insulator (SOI) chip, which comprises a semiconductor layer having a planarized surface facing the semiconductor reflector. The semiconductor layer includes: an optical coupler to redirect the optical signal to and from the planarized surface; and an optical waveguide to convey the optical signal from the optical coupler. While assembling these chips, a height of the optical gain material is referenced against the planarized surface of the semiconductor layer, a height of the optical reflector is referenced against the planarized surface of the semiconductor layer, and the optical reflector is aligned with the optical coupler, so that the optical signal emanating from the optical gain material is reflected by the optical reflector and into the optical coupler.

公开(公告)号：US09698564B1

公开(公告)日：2017-07-04

申请号：US15019631

申请日：2016-02-09

Applicant: Oracle International Corporation

Inventor： Ivan Shubin ,  Xuezhe Zheng ,  Jin-Hyoung Lee ,  Ashok V. Krishnamoorthy

IPC: G02B6/12 ,  H01S5/026 ,  G02B6/30 ,  G02B6/42 ,  H01S5/10 ,  H01S5/02 ,  H01S5/30

CPC classification number: H01S5/026 ,  G02B6/00 ,  G02B6/12 ,  G02B6/30 ,  G02B6/42 ,  G02B6/4292 ,  H01S5/005 ,  H01S5/0206 ,  H01S5/02252 ,  H01S5/02284 ,  H01S5/1014 ,  H01S5/14 ,  H01S5/3013

Abstract: A multi-chip module (MCM) includes: an interposer, a photonic chip, an optical gain chip, and a waveguide-fiber connector. The photonic chip, which may be electrically coupled to the interposer, may be implemented using a silicon-on-insulator (SOI) technology, and may include an optical waveguide that conveys an optical signal. Moreover, the optical gain chip, which may be electrically coupled to the interposer, may include a III-V compound semiconductor, and may include a second optical waveguide that conveys the optical signal and that is vertically aligned with the optical waveguide relative to a top surface of the interposer. Furthermore, the waveguide-fiber connector may be mechanically coupled to the interposer, and remateably mechanically coupled to an optical fiber coupler that includes the optical fiber. The waveguide-fiber connector may convey the optical signal between the optical waveguide in the photonic chip and the optical fiber.

公开(公告)号：US09250403B2

公开(公告)日：2016-02-02

申请号：US14047910

申请日：2013-10-07

Applicant: Oracle International Corporation

Inventor： Hiren D. Thacker ,  Frankie Y. Liu ,  Robert David Hopkins, II ,  Jon Lexau ,  Xuezhe Zheng ,  Guoliang Li ,  Ivan Shubin ,  Ronald Ho ,  John E. Cunningham ,  Ashok V. Krishnamoorthy

IPC: G02B6/12 ,  G02B6/42 ,  H01L25/065 ,  H01L23/00 ,  H05K3/36

CPC classification number: G02B6/4274 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/32 ,  H01L24/72 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L25/0652 ,  H01L25/0655 ,  H01L2224/0401 ,  H01L2224/13147 ,  H01L2224/1403 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/72 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06534 ,  H01L2225/06589 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/37001 ,  H05K3/36 ,  H05K2201/10484 ,  H01L2924/00

Abstract: A chip package includes an optical integrated circuit (such as a hybrid integrated circuit) and an integrated circuit that are adjacent to each in the chip package. The integrated circuit includes electrical circuits, such as memory or a processor, and the optical integrated circuit communicates optical signals with very high bandwidth. Moreover, a front surface of the integrated circuit is electrically coupled to a front surface of the optical integrated circuit by a top surface of the interposer, where the top surface faces the front surface of the integrated circuit and the front surface of the optical integrated circuit. Furthermore, the integrated circuit and the optical integrated circuit may be on a same side of the interposer. By integrating the optical integrated circuit and the integrated circuit in close proximity, the chip package may facilitate improved performance compared to chip packages with electrical interconnects.

Abstract translation: 芯片封装包括与芯片封装中的每一个相邻的光学集成电路（例如混合集成电路）和集成电路。 集成电路包括诸如存储器或处理器的电路，并且光学集成电路传送具有非常高带宽的光信号。 此外，集成电路的前表面通过插入件的顶表面电耦合到光集成电路的前表面，其中顶表面面向集成电路的前表面和光集成电路的前表面 。 此外，集成电路和光集成电路可以在插入器的同一侧上。 通过将光集成电路和集成电路集成在一起，与具有电互连的芯片封装相比，芯片封装可以有助于提高性能。

公开(公告)号：US20140268312A1

公开(公告)日：2014-09-18

申请号：US13831541

申请日：2013-03-14

Applicant: ORACLE INTERNATIONAL CORPORATION

Inventor： Xuezhe Zheng ,  Ashok V. Krishnamoorthy ,  Ivan Shubin ,  John E. Cunningham ,  Guoliang Li ,  Ying L. Luo

IPC: H01S5/14

CPC classification number: H01S5/1028 ,  H01S5/02252 ,  H01S5/1025 ,  H01S5/141 ,  H01S5/142 ,  H01S5/18 ,  H01S5/4087

Abstract: A hybrid optical source that provides an optical signal having a wavelength is described. This hybrid optical source includes an edge-coupled optical amplifier (such as a III-V semiconductor optical amplifier) aligned to a semiconductor reflector (such as an etched silicon mirror). The semiconductor reflector efficiently couples (i.e., with low optical loss) light out of the optical amplifier in a direction approximately perpendicular to a plane of the optical amplifier. A corresponding optical coupler (such as a diffraction grating or a mirror) fabricated on a silicon-on-insulator chip efficiently couples the light into a sub-micron silicon-on-insulator optical waveguide. The silicon-on-insulator optical waveguide couples the light to additional photonic elements (including a reflector) to complete the hybrid optical source.

Abstract translation: 描述了提供具有波长的光信号的混合光源。 该混合光源包括与半导体反射器（例如蚀刻硅镜）对准的边缘耦合光放大器（例如III-V半导体光放大器）。 半导体反射器在大致垂直于光放大器的平面的方向上有效地耦合（即，具有低光损耗）的光从光放大器中出射。 制造在绝缘体上硅芯片上的对应的光耦合器（例如衍射光栅或反射镜）有效地将光耦合到亚微米上绝缘体上的光波导中。 绝缘体上的光波导将光耦合到附加的光子元件（包括反射器）以完成混合光源。

公开(公告)号：US09696486B2

公开(公告)日：2017-07-04

申请号：US13955705

申请日：2013-07-31

Applicant: Oracle International Corporation

Inventor： Xuezhe Zheng ,  Ivan Shubin ,  John E. Cunningham ,  Ashok V. Krishnamoorthy

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/136 ,  G02B6/42

CPC classification number: G02B6/122 ,  G02B6/136 ,  G02B6/4214 ,  G02B2006/12061 ,  G02B2006/12104 ,  G02B2006/12176

Abstract: A photonic integrated circuit (PIC) is described. This PIC includes an inverse facet mirror on a silicon optical waveguide for optical proximity coupling between two silicon-on-insulator (SOI) chips placed face to face. Accurate mirror facets may be fabricated in etch pits using a silicon micro-machining technique, with wet etching of the silicon facet at an angle of 45° when etched through the surface. Moreover, by filling the etch pit with polycrystalline silicon or another filling material that has an index of refraction similar to silicon (such as a silicon-germanium alloy), a reflecting mirror with an accurate angle can be formed at the end of the silicon optical waveguide using: a metal coating, a dielectric coating, thermal oxidation, or selective silicon dry etching removal of one side of the etch pit to define a cavity.

公开(公告)号：US20170045686A1

公开(公告)日：2017-02-16

申请号：US14823954

申请日：2015-08-11

Applicant: ORACLE INTERNATIONAL CORPORATION

Inventor： Jin-Hyoung Lee ,  Ivan Shubin ,  Xuezhe Zheng ,  Ashok V. Krishnamoorthy

IPC: G02B6/14 ,  G02B6/122

CPC classification number: G02B6/14 ,  G02B6/1228

Abstract: A standard-CMOS-process-compatible optical mode converter transitions an optical mode size using a series of adjacent regions having different optical mode sizes. In particular, in a partial-slab-mode region, which is adjacent to an initial rib-optical-waveguide-mode region, a width of a slab portion of the rib-type optical waveguide decreases and a width of a rib portion of the rib-type optical waveguide decreases to a first minimum tip size. Then, in a slab-mode region, which is adjacent to the partial-slab-mode region, the width of the slab portion decreases to a second minimum tip size. In addition, a dielectric layer is disposed over the slab portion, the rib portion and the BOX layer in the partial-slab-mode region, the slab portion and the BOX layer in the slab-mode region, and the BOX layer in a released-mode region that is adjacent to the slab-mode region and that does not include the semiconductor layer.

Abstract translation: 标准CMOS工艺兼容光学模式转换器使用具有不同光学模式尺寸的一系列相邻区域来转换光学模式尺寸。 特别地，在与初始肋 - 光波导模式区域相邻的局部平板模式区域中，肋型光波导的板坯部分的宽度减小，并且肋部分的肋部分的宽度 肋型光波导减小到第一最小尖端尺寸。 然后，在与部分板坯模式区域相邻的板坯模式区域中，板坯部分的宽度减小到第二最小端部尺寸。 此外，介电层设置在部分平板模式区域中的板坯部分，肋部分和BOX层上，板模块区域中的板坯部分和BOX层，以及释放的BOX层 模式区域，其与slab模式区域相邻并且不包括半导体层。

公开(公告)号：US20160170158A1

公开(公告)日：2016-06-16

申请号：US14060136

申请日：2013-10-22

Applicant: Oracle International Corporation

Inventor： Xuezhe Zheng ,  Ivan Shubin ,  Ying L. Luo ,  Guoliang Li ,  Ashok V. Krishnamoorthy

IPC: G02B6/42 ,  H01S5/02 ,  G02B6/14 ,  H01S5/026 ,  H01S5/30

CPC classification number: G02B6/4224 ,  G02B6/00 ,  G02B6/14

Abstract: A technique for fabricating a hybrid optical source is described. During this fabrication technique, a III-V compound-semiconductor active gain medium is integrated with a silicon-on-insulator (SOI) chip (or wafer) using edge coupling to form a co-planar hybrid optical source. Using a backside etch-assisted cleaving technique, and a temporary transparent substrate with alignment markers, a III-V compound-semiconductor chip with proper edge polish and coating can be integrated with a processed SOI chip (or wafer) with accurate alignment. This fabrication technique may significantly reduce the alignment complexity when fabricating the hybrid optical source, and may enable wafer-scale integration.

Abstract translation: 描述了一种用于制造混合光源的技术。 在该制造技术中，III-V族化合物 - 半导体有源增益介质使用边缘耦合与绝缘体上硅（SOI）芯片集成，以形成共面混合光源。 使用背面蚀刻辅助切割技术和具有对准标记的临时透明基板，具有适当边缘抛光和涂层的III-V化合物半导体芯片可以与精确对准的经处理的SOI芯片（或晶片）集成。 当制造混合光源时，这种制造技术可以显着降低对准复杂性，并且可以实现晶片级整合。