公开(公告)号：US11437545B2

公开(公告)日：2022-09-06

申请号：US16979596

申请日：2019-03-14

Applicant: OSRAM OLED GmbH

Inventor： Anna Strozecka-Assig ,  Johannes Saric

IPC: H01L33/46 ,  H01L33/38 ,  H01L33/42 ,  H01L33/40 ,  H01L33/30

Abstract: In one embodiment, the optoelectronic semiconductor chip (1) comprises a semiconductor layer sequence (2) with an active zone (23) for generating radiation with a wavelength of maximum intensity L. A mirror (3) comprises a cover layer (31). The cover layer (31) is made of a material transparent to the radiation and has an optical thickness between 0.5 L and 3 L inclusive. The cover layer (31) is followed in a direction away from the semiconductor layer sequence (2) by between inclusive two and inclusive ten intermediate layers (32, 33, 34, 35) of the mirror (3). The intermediate layers (32, 33, 34, 35) alternately have high and low refractive indices. An optical thickness of at least one of the intermediate layers (32, 33, 34, 35) is not equal to L/4. The intermediate layers (32, 33, 34, 35) are followed in the direction away from the semiconductor layer sequence (2) by at least one metal layer (39) of the mirror (3) as a reflection layer.

公开(公告)号：US20210043805A1

公开(公告)日：2021-02-11

申请号：US16979596

申请日：2019-03-14

Applicant: OSRAM OLED GmbH

Inventor： Anna Strozecka-Assig ,  Johannes Saric

IPC: H01L33/46 ,  H01L33/38 ,  H01L33/42

Abstract: In one embodiment, the optoelectronic semiconductor chip (1) comprises a semiconductor layer sequence (2) with an active zone (23) for generating radiation with a wavelength of maximum intensity L. A mirror (3) comprises a cover layer (31). The cover layer (31) is made of a material transparent to the radiation and has an optical thickness between 0.5 L and 3 L inclusive. The cover layer (31) is followed in a direction away from the semiconductor layer sequence (2) by between inclusive two and inclusive ten intermediate layers (32, 33, 34, 35) of the mirror (3). The intermediate layers (32, 33, 34, 35) alternately have high and low refractive indices. An optical thickness of at least one of the intermediate layers (32, 33, 34, 35) is not equal to L/4. The intermediate layers (32, 33, 34, 35) are followed in the direction away from the semiconductor layer sequence (2) by at least one metal layer (39) of the mirror (3) as a reflection layer.