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公开(公告)号：US10630057B2
公开(公告)日：2020-04-21
申请号：US16092495
申请日：2017-03-27
Applicant: OSRAM OLED GMBH
Inventor： Bernhard Stojetz , Georg Brüderl
Abstract: In an embodiment a laser include a semiconductor layer sequence having an active zone for generating radiation and an electrical contact web arranged on a top side of the semiconductor layer sequence, wherein the contact web is located on the top side only in an electrical contact region or is in electrical contact with the top side only in the contact region so that the active zone is supplied with current only in places during operation, wherein the contact web comprises a plurality of metal layers at least partially stacked one above the other, wherein at least one of the metal layers comprises a structuring so that the at least one metal layer only partially covers the contact region and has at least one opening or interruption, and wherein the structuring reduces stresses of the semiconductor layer sequence on account of different thermal expansion coefficients of the metal layers.
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公开(公告)号：US20240146034A1
公开(公告)日：2024-05-02
申请号：US18409474
申请日：2024-01-10
Applicant: OSRAM OLED GmbH
Inventor： Alfred Lell , Harald Koenig , Bernhard Stojetz , Muhammad Ali
IPC: H01S5/40 , H01S5/0234 , H01S5/024 , H01S5/042 , H01S5/323
CPC classification number: H01S5/4031 , H01S5/0234 , H01S5/02461 , H01S5/02469 , H01S5/0421 , H01S5/32341 , H01S5/04254 , H01S5/22
Abstract: In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, and a thermal decoupling structure in a region between two adjacent individual emitters, wherein the decoupling structure includes an electrically conductive cooling element located on the contact side and completely covering a contiguous cooling region of the contact side, wherein the cooling element is completely electrically isolated from the semiconductor layer sequence and thermally coupled to the semiconductor layer sequence along the cooling region, and wherein the cooling region has a width, measured along the lateral transverse direction, which is at least half a width of an adjacent contact region.
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公开(公告)号：US11923662B2
公开(公告)日：2024-03-05
申请号：US17807272
申请日：2022-06-16
Applicant: OSRAM OLED GmbH
Inventor： Alfred Lell , Muhammad Ali , Bernhard Stojetz , Harald Koenig
CPC classification number: H01S5/4031 , H01S5/0234 , H01S5/02461 , H01S5/02469 , H01S5/0421 , H01S5/32341 , H01S5/04254 , H01S5/22
Abstract: An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.
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公开(公告)号：US20220311219A1
公开(公告)日：2022-09-29
申请号：US17807272
申请日：2022-06-16
Applicant: OSRAM OLED GmbH
Inventor： Alfred Lell , Muhammad Ali , Bernhard Stojetz , Harald Koenig
IPC: H01S5/40 , H01S5/024 , H01S5/042 , H01S5/323 , H01S5/0234
Abstract: An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.
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公开(公告)号：US10727645B2
公开(公告)日：2020-07-28
申请号：US16075853
申请日：2017-03-13
Applicant: OSRAM OLED GmbH
Inventor： Bernhard Stojetz , Alfred Lell , Christoph Eichler , Andreas Löffler
Abstract: A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser for generating a primary radiation and at least one conversion element for generating a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element for generating the secondary radiation comprises a semiconductor layer sequence having one or more quantum well layers, and wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence perpendicular to a growth direction thereof, with a tolerance of at most 15°.
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Patent Agency Ranking
公开(公告)号：US11942763B2
公开(公告)日：2024-03-26
申请号：US16954961
申请日：2018-12-14
Applicant: OSRAM OLED GmbH
Inventor： Harald König , Bernhard Stojetz , Alfred Lell , Muhammad Ali
IPC: H01S5/40 , B23K26/122 , H01S5/0237 , H01S5/024 , H01S5/042 , H01S5/22 , H01S5/323 , H01S5/02345
CPC classification number: H01S5/4031 , B23K26/122 , H01S5/0237 , H01S5/02469 , H01S5/02492 , H01S5/04254 , H01S5/22 , H01S5/32341 , H01S5/02345 , H01S5/04256
Abstract: In one embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) based on the material system AlInGaN with at least one active zone (22) for generating laser radiation. A heat sink (3) is thermally connected to the semiconductor layer sequence (2) and has a thermal resistance towards the semiconductor layer sequence (2). The semiconductor layer sequence (2) is divided into a plurality of emitter strips (4) and each emitter strip (4) has a width (b) of at most 0.3 mm in the direction perpendicular to a beam direction (R). The emitter strips (4) are arranged with a filling factor (FF) of less than or equal to 0.4. The filling factor (FF) is set such that laser radiation having a maximum optical output power (P) can be generated during operation.
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公开(公告)号：US11626707B2
公开(公告)日：2023-04-11
申请号：US17193951
申请日：2021-03-05
Applicant: OSRAM OLED GmbH
Inventor： Sven Gerhard , Christoph Eichler , Alfred Lell , Bernhard Stojetz
Abstract: In an embodiment a semiconductor laser diode includes a semiconductor layer sequence comprising an active layer having a main extension plane, the semiconductor layer sequence configured to generate light in an active region and radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, wherein the first and second contact regions adjoin one another.
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公开(公告)号：US20210249839A1
公开(公告)日：2021-08-12
申请号：US17193951
申请日：2021-03-05
Applicant: OSRAM OLED GmbH
Inventor： Sven Gerhard , Christoph Eichler , Alfred Lell , Bernhard Stojetz
Abstract: In an embodiment a semiconductor laser diode includes a semiconductor layer sequence comprising an active layer having a main extension plane, the semiconductor layer sequence configured to generate light in an active region and radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, wherein the first and second contact regions adjoin one another.
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公开(公告)号：US11004876B2
公开(公告)日：2021-05-11
申请号：US16528307
申请日：2019-07-31
Applicant: OSRAM OLED GMBH
Inventor： Christoph Eichler , Andre Somers , Harald Koenig , Bernhard Stojetz , Andreas Loeffler , Alfred Lell
IPC: H01L21/66 , H01L27/12 , H01L21/02 , H01L21/20 , H01L21/762 , H01S5/22 , H01L33/02 , H01L33/00 , H01L21/268 , H01L21/3105 , H01L21/324 , H01S5/20 , H01S5/223 , H01L33/08 , H01L33/12
Abstract: A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.
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公开(公告)号：US20200295534A1
公开(公告)日：2020-09-17
申请号：US16637698
申请日：2018-08-21
Applicant: OSRAM OLED GmbH
Inventor： Alfred Lell , Muhammad Ali , Bernhard Stojetz , Harald Koenig
Abstract: An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.
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