Laser diode and method for manufacturing a laser diode

    公开(公告)号:US11251587B2

    公开(公告)日:2022-02-15

    申请号:US16612799

    申请日:2018-05-30

    Abstract: A laser diode and a method for manufacturing a laser diode are disclosed. In an embodiment a laser diode includes a surface emitting semiconductor laser configured to emit electromagnetic radiation and an optical element arranged downstream of the semiconductor laser in a radiation direction, wherein the optical element includes a diffractive structure or a meta-optical structure or a lens structure, and wherein the optical element and the semiconductor laser are cohesively connected to each other.

    Assembly comprising an electric component

    公开(公告)号:US11177628B2

    公开(公告)日:2021-11-16

    申请号:US16823671

    申请日:2020-03-19

    Abstract: A surface-mountable electrical device, an assembly including the surface-mountable electrical device, and a method for producing the surface-mountable electrical device is provided. The surface-mountable electrical device includes at least one electrical component which is a semiconductor component and which is intended for generating radiation, a control circuit for pulsed operation of the component, and a capacitor which is connected to the component electrically in series and which is configured for the pulsed energization of the component. The surface-mountable electrical device further includes a lead frame assembly having a plurality of different lead frames as a mounting platform for the component, the capacitor and the control circuit, wherein at least one of the different lead frames of the lead frame assembly is thinner than a further lead frame of the different lead frames and the lead frame assembly lies only partially in a mounting side of the device.

    Light-emitting semiconductor chip and display device

    公开(公告)号:US11127779B2

    公开(公告)日:2021-09-21

    申请号:US16633826

    申请日:2018-07-31

    Abstract: A light-emitting semiconductor chip and a display device are disclosed. In an embodiment a light-emitting semiconductor chip includes an emission surface formed with a plurality of first emission regions and second emission regions, wherein the first emission regions and the second emission regions are configured to emit light of a predeterminable color location, wherein the first and second emission regions are separately controllable from each other, wherein the first emission regions and second emission regions are arranged next to one another in a first plane, wherein all second emission regions form at least a part of an outer edge of the emission surface, and wherein the first emission regions have a smaller extent than the second emission regions along at least one direction lying in the first plane.

    Method of manufacturing a multilayer optical element

    公开(公告)号:US11067727B2

    公开(公告)日:2021-07-20

    申请号:US16971529

    申请日:2019-02-28

    Abstract: A method for manufacturing a multilayer optical element is disclosed. In an embodiment the method includes providing a substrate, applying a first optical layer by applying a first layer having a dielectric first material having a first refractive index, structuring the first layer by sectionally removing the first material and filling first interspaces with a dielectric second material having a second refractive index different from the first refractive index so that the second material has at least the same height as the first material, and applying at least a second optical layer by applying a second layer having the first material, structuring the second layer by sectionally removing the first material so that the first optical layer is exposed in second interspaces between second areas with the first material and filling the second interspaces with the second material so that the second material has at least the same height as the first material.

    SURFACE-EMITTING SEMICONDUCTOR LASER CHIP

    公开(公告)号:US20210050710A1

    公开(公告)日:2021-02-18

    申请号:US16964072

    申请日:2019-01-23

    Abstract: Surface-emitting semiconductor laser chip (1) comprising a carrier (20), a layer stack (10) arranged on the carrier (20) and having a layer plane (L) extending perpendicularly to the stacking direction (R), a front side contact (310) and a rear side contact (320), in which in operation a predetermined distribution of a current density (I) is achieved by means of current constriction in the layer stack (10), wherein in the carrier (20) an electrical through-connection (200) is provided, which extends from a bottom surface (20a) of the carrier (20) facing away from the layer stack (10) to a surface of the carrier (20) facing the layer stack (10), and the distribution of the current density (I) is significantly influenced by the shape and size of the cross-section of the through-connection (200) parallel to the layer plane (L) on the surface facing the layer stack.

    SEMICONDUCTOR LASER COMPONENT AND METHOD OF PRODUCING A SEMICONDUCTOR LASER COMPONENT

    公开(公告)号:US20200176948A1

    公开(公告)日:2020-06-04

    申请号:US16615452

    申请日:2018-05-18

    Abstract: A semiconductor laser component including a semiconductor chip arranged to emit laser radiation, a cladding that is electrically insulating and covers the semiconductor chip in places, and a bonding layer that electrically conductively connects the semiconductor chip to a first connection point, wherein the semiconductor chip includes a cover surface, a bottom surface, a first front surface, a second front surface, a first side surface and a second side surface, the first front surface is arranged to decouple the laser beam, the cladding covers the semiconductor chip at least in places on the cover surface, the second front surface, the first side surface and the second side surface, and the bonding layer on the cladding extends from the cover surface to the first connection point.

    Method for producing a plurality of transferable components and composite component of components

    公开(公告)号:US11509113B2

    公开(公告)日:2022-11-22

    申请号:US16977165

    申请日:2019-02-05

    Abstract: A method for producing a composite component (100) and a composite component (100) comprising a plurality of components (10), a removable sacrificial layer (4), an anchoring structure (3) and a common intermediate carrier (90) are specified. The components each have a semiconductor body (2) comprising an active zone (23), are configured to generate coherent electromagnetic radiation and are arranged on the common intermediate carrier. The sacrificial layer is arranged in a vertical direction between the intermediate carrier and the components. The anchoring structure comprises a plurality of anchoring elements (3A, 3B), wherein the anchoring structure and the sacrificial layer provide a mechanical connection between the intermediate carrier and the components. Without the sacrificial layer, the components are mechanically connected to the intermediate carrier solely via the anchoring elements, wherein the anchoring elements are formed in such a way that under mechanical load they release the components so that the components are detachable from the intermediate carrier and are thus formed to be transferable.

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