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公开(公告)号：US09385507B2
公开(公告)日：2016-07-05
申请号：US14968845
申请日：2015-12-14
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Christoph Eichler , Andreas Breidenassel , Alfred Lell
CPC classification number: H01S5/1003 , H01S5/0202 , H01S5/0203 , H01S5/0264 , H01S5/0286 , H01S5/1017 , H01S5/1237 , H01S5/2063 , H01S5/22 , H01S2301/166
Abstract: A semiconductor laser light source comprising an edge-emitting semiconductor body (10) is provided. The semiconductor body (10) contains a semiconductor layer stack (110) having an n-type layer (111), an active layer (112) and a p-type layer (113) which is formed for generating electromagnetic radiation which comprises a coherent portion (21). The semiconductor laser light source is formed for decoupling the coherent portion (21) of the electromagnetic radiation from a decoupling surface (101) of the semiconductor body (10) which is inclined with respect to the active layer (112). The semiconductor body (10) comprises a further external surface (102A, 102B, 102C) which is inclined with respect to the decoupling surface (101) and has at least one light-diffusing sub-region (12, 12A, 12B, 12C, 120A, 120B) which is provided in order to direct a portion of the electromagnetic radiation generated by the semiconductor layer stack (110) in the direction towards the further external surface (102A, 102B, 102C).
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公开(公告)号：US20160126702A1
公开(公告)日：2016-05-05
申请号：US14895120
申请日：2014-06-03
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Jelena Ristic , Martin Straßburg , Alfred Lell , Uwe Strauß
CPC classification number: H01S5/3428 , H01L27/156 , H01L33/007 , H01L33/10 , H01L33/16 , H01L33/24 , H01L33/405 , H01L33/46 , H01S5/0207 , H01S5/0217 , H01S5/02236 , H01S5/1042 , H01S5/1835 , H01S5/18377 , H01S5/341 , H01S5/34333 , H01S5/4025 , H01S5/4087 , H01S5/423
Abstract: An assembly includes a carrier and a structure having a core formed on the carrier, wherein the core has a longitudinal extension having two end regions, a first end region is arranged facing the carrier and a second end region is arranged facing away from the carrier, the core is formed as electrically conductive at least in an outer region, the region is at least partially covered with an active zone layer, the active zone layer generates electromagnetic radiation, a mirror layer is provided at least in one end region of the core to reflect electromagnetic radiation in a direction, a first electrical contact layer contacts an electrically conductive region of the core, and a second contact layer contacts the active zone layer.
Abstract translation: 组件包括载体和具有形成在载体上的芯的结构，其中芯具有具有两个端部区域的纵向延伸部，第一端部区域面向载体布置，并且第二端部区域布置成背离载体， 所述芯至少在外部区域中形成为导电的，所述区域至少部分地被活性区域层覆盖，所述活性区域层产生电磁辐射，在所述芯的至少一个端部区域中提供镜层的镜层 反射电磁辐射的方向，第一电接触层接触芯的导电区域，第二接触层接触有源区层。
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公开(公告)号：US09048630B2
公开(公告)日：2015-06-02
申请号：US14031991
申请日：2013-09-19
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Bernhard Stojetz , Alfred Lell , Christoph Eichler
CPC classification number: H01S5/22 , H01S5/0202 , H01S5/0203 , H01S5/0207 , H01S5/0213 , H01S5/0653 , H01S5/2022 , H01S5/3013 , H01S5/34313 , H01S5/34333 , H01S2301/17
Abstract: A semiconductor laser diode includes a substrate. A semiconductor layer sequence on the substrate has at least one active layer designed for generating laser light that is emitted along an emission direction during operation. At least one filter layer has a main extension plane that is parallel to a main extension plane of the active layer and that is designed to scatter and/or absorb light that propagates in the semiconductor layer sequence and/or the substrate in addition to the laser light.
Abstract translation: 半导体激光二极管包括基板。 衬底上的半导体层序列具有至少一个有源层，被设计用于产生在操作期间沿发射方向发射的激光。 至少一个过滤层具有平行于有源层的主延伸面的主延伸平面，并且被设计成除了激光之外散射和/或吸收在半导体层序列和/或衬底中传播的光 光。
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公开(公告)号：US20140341247A1
公开(公告)日：2014-11-20
申请号：US14373998
申请日：2013-03-11
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Uwe Strauß , Sönke Tautz , Alfred Lell , Clemens Vierheilig
CPC classification number: H01S5/022 , H01S5/02212 , H01S5/02272 , H01S5/02461 , H01S5/02469 , H01S5/0262 , H01S5/32341 , H01S2301/176
Abstract: A laser diode device has a housing with a mounting part and a laser diode chip, which is based on a nitride compound semi-conductor material, in the housing on the mounting part. The laser diode chip is mounted directly on the mounting part by means of a solder layer and the solder layer has a thickness of greater than or equal to 3 μm.
Abstract translation: 激光二极管器件具有在安装部分的壳体中具有基于氮化物复合半导体材料的安装部分和激光二极管芯片的壳体。 激光二极管芯片通过焊料层直接安装在安装部分上，焊料层的厚度大于或等于3μm。
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公开(公告)号：US20140146842A1
公开(公告)日：2014-05-29
申请号：US14092681
申请日：2013-11-27
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Adrian Stefan Avramescu , Clemens Vierheilig , Christoph Eichler , Alfred Lell , Jens Mueller
IPC: H01S5/028
CPC classification number: H01S5/0425 , H01L2224/4847 , H01L2224/73265 , H01L2924/12032 , H01S5/02276 , H01S5/02461 , H01S5/22 , H01S5/32341 , H01S2301/176 , H01L2924/00
Abstract: A semiconductor stripe laser has a first semiconductor region having a first conductivity type and a second semiconductor region having a different, second conductivity type. An active zone for generating laser radiation is located between the semiconductor regions. A stripe waveguide is formed in the second semiconductor region and is arranged to guide waves in a one-dimensional manner and is arranged for a current density of at least 0.5 kA/cm2. A second electrical contact is located on the second semiconductor region and on an electrical contact structure for external electrical contacting. An electrical passivation layer is provided in certain places on the stripe waveguide. A thermal insulation apparatus is located between the second electrical contact and the active zone and/or on the stripe waveguide.
Abstract translation: 半导体条纹激光器具有具有第一导电类型的第一半导体区域和具有不同的第二导电类型的第二半导体区域。 用于产生激光辐射的活性区域位于半导体区域之间。 条纹波导形成在第二半导体区域中，并且被布置成以一维方式引导波，并且布置成至少为0.5kA / cm 2的电流密度。 第二电接触位于第二半导体区域上并且位于用于外部电接触的电接触结构上。 在条形波导上的某些位置提供电钝化层。 绝热装置位于第二电触点和有源区之间和/或条带波导上。
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Patent Agency Ranking
公开(公告)号：US20140092931A1
公开(公告)日：2014-04-03
申请号：US13857100
申请日：2013-04-04
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Uwe Strauss , Soenke Tautz , Alfred Lell , Karsten Auen , Clemens Vierheilig
IPC: H01S5/022
CPC classification number: H01S5/02272 , H01S5/022 , H01S5/02212 , H01S5/02469 , H01S5/02476 , H01S5/0282 , H01S5/32341 , H01S2301/176
Abstract: A laser diode assembly includes a housing having a housing part and a mounting part that is connected to the housing part and that extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 3 μm is arranged between the laser diode chip and the mounting part.
Abstract translation: 激光二极管组件包括壳体，壳体具有壳体部分和连接到壳体部分并且沿着延伸方向远离壳体部分延伸的安装部分。 激光二极管芯片设置在安装部分上。 激光二极管芯片在衬底上具有用于发光的有源层的半导体层。 壳体部分和安装部分具有由铜构成的主体，并且至少壳体部分是钢包覆的。 在激光二极管芯片和安装部件之间布置有厚度大于或等于3μm的第一焊料层。
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公开(公告)号：US20130343419A1
公开(公告)日：2013-12-26
申请号：US13857103
申请日：2013-04-04
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alfred Lell , Soenke Tautz , Uwe Strauss , Clemens Vierheilig
IPC: H01S5/30
CPC classification number: H01S5/3013 , H01L2224/29101 , H01S5/022 , H01S5/02212 , H01S5/02272 , H01S5/02469 , H01S5/02476 , H01S5/02484 , H01S5/02492 , H01S5/028 , H01S5/0282 , H01S5/2036 , H01S5/30 , H01S5/32341 , H01S2301/176
Abstract: A laser diode assembly includes a housing having a housing part and a mounting part, which is connected to the housing part and which extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 2 μm is arranged between the laser diode chip and the mounting part. The laser diode chip has a radiation coupling-out area, on which a crystalline protective layer is applied.
Abstract translation: 激光二极管组件包括具有壳体部分和安装部分的壳体，该壳体部分和安装部分连接到壳体部分并且沿着延伸方向远离壳体部分延伸。 激光二极管芯片设置在安装部分上。 激光二极管芯片在衬底上具有用于发光的有源层的半导体层。 壳体部分和安装部分具有由铜构成的主体，并且至少壳体部分是钢包覆的。 在激光二极管芯片和安装部件之间布置有厚度大于或等于2μm的第一焊料层。 激光二极管芯片具有辐射耦合输出区域，在其上施加结晶保护层。
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公开(公告)号：US20210391695A1
公开(公告)日：2021-12-16
申请号：US17292197
申请日：2019-11-07
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Harald König , Bernhard Stojetz , Alfred Lell , Muhammad Ali
Abstract: The diode laser comprises a laser bar having a semiconductor body and an active layer, wherein the laser bar has a plurality of individual emitters. At least some individual emitters are respectively assigned a section of the semiconductor body and a current regulating element's connected in series therewith, such that, during operation of the individual emitters as intended, an electrical operating current I0 fed to the individual emitter in each case flows completely through the assigned section of the semiconductor body and in the process a voltage drop UH occurs at the section and at least part of said operating current I0 flows through the assigned current regulating element and experiences an electrical resistance RS in the process. In the case of the individual emitters, the current regulating element assigned in each case is configured such that the resistance Rg at an operating temperature T0 has a positive temperature coefficient dRS/dT|T0. Alternatively or additionally, the resistance RS is greater than IΔUH/I0, wherein ΔUH is the change in the voltage drop UH at the assigned section of the semiconductor body in the event of an increase in the temperature T of the individual emitter from an operating temperature T0 by 1 K.
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公开(公告)号：US11196231B2
公开(公告)日：2021-12-07
申请号：US16500078
申请日：2018-04-18
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alfred Lell , Sebastian Taeger
Abstract: A semiconductor laser diode and a method for manufacturing a semiconductor laser diode are disclosed. In an embodiment a semiconductor laser diode includes an epitaxially produced semiconductor layer sequence comprising at least one active layer and a gallium-containing passivation layer on at least one surface region of the semiconductor layer sequence.
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公开(公告)号：US11011887B2
公开(公告)日：2021-05-18
申请号：US16471330
申请日：2017-12-21
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Sven Gerhard , Christoph Eichler , Alfred Lell , Bernhard Stojetz
Abstract: A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a semiconductor layer sequence including an active layer having a main extension plane, configured to generate light in an active region during operation and configured to radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, and wherein the first and second contact regions adjoin one another.
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