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公开(公告)号：US10247969B1
公开(公告)日：2019-04-02
申请号：US16015097
申请日：2018-06-21
Applicant: PsiQuantum Corp.
Inventor： Damien Bonneau , Mark Thompson , Syrus Ziai
Abstract: A photon source device includes a substrate and a first waveguide arranged on the substrate. The first waveguide is coupled with a first pair of reflectors defining a first resonant cavity in the first waveguide. The first resonant cavity is configured for outputting a first output wavelength and a second output wavelength. The first pair of reflectors include a partial reflector for the first output wavelength and a partial reflector for the second output wavelength. The photon source device further includes a second pair of reflectors defining a second resonant cavity that intersects with the first resonant cavity. The second resonant cavity is configured for receiving an input wavelength distinct from the first and the second output wavelengths. A first reflector and a second reflector of the second pair of reflectors have a first reflectance and a second reflectance for the input wavelength, respectively.
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公开(公告)号：US12066661B2
公开(公告)日：2024-08-20
申请号：US18370785
申请日：2023-09-20
Applicant: PsiQuantum, Corp. , The University of Bristol
Inventor： Damien Bonneau , Mark Thompson
CPC classification number: G02B6/2861 , G02B6/262 , H01P9/00
Abstract: An optical device includes a first multi-mode waveguide, a first optical coupler coupled to the first multi-mode waveguide, the first coupler being tapered and curved, and a first single-mode waveguide having a first end coupled to the first optical coupler. The optical device may be used in an optical delay device. A method of propagating light in a first multi-mode waveguide toward a first optical coupler, propagating the light in the first optical coupler toward a first single-mode waveguide, the first optical coupler being tapered and curved, and propagating the light along the first single-mode waveguide is also disclosed.
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公开(公告)号：US20240027872A1
公开(公告)日：2024-01-25
申请号：US18204185
申请日：2023-05-31
Applicant: Psiquantum, Corp.
Inventor： Mihai Dorian Vidrighin , Damien Bonneau , Alessandro Farsi , Mark G. Thompson
CPC classification number: G02F1/365 , G02F1/3536 , H04B10/70 , G02F1/395
Abstract: Techniques disclosed herein relate to photon sources with high spectral purity and high brightness. In one embodiment, a photon-pair source includes a pump waveguide, a first resonator coupled to the pump waveguide to couple pump photons from the pump waveguide into the first resonator, a second resonator coupled to the first resonator, and an output waveguide coupled to the second resonator. The second resonator is configured to convert the pump photons into photon pairs. The second resonator and the first resonator are configured to cause a coupling-induced resonance splitting in the second resonator or the first resonator. The second resonator and the output waveguide are configured to couple the photon pairs from the second resonator into the output waveguide. In some embodiments, the photo-pair source includes one or more tuners for tuning at least one of the first resonator or the second resonator.
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公开(公告)号：US11698570B2
公开(公告)日：2023-07-11
申请号：US17321077
申请日：2021-05-14
Applicant: Psiquantum, Corp.
Inventor： Mihai Dorian Vidrighin , Damien Bonneau , Alessandro Farsi , Mark G. Thompson
CPC classification number: G02F1/365 , G02F1/3536 , H04B10/70 , G02B6/29343 , G02F1/395 , G02F2201/302
Abstract: Techniques disclosed herein relate to photon sources with high spectral purity and high brightness. In one embodiment, a photon-pair source includes a pump waveguide, a first resonator coupled to the pump waveguide to couple pump photons from the pump waveguide into the first resonator, a second resonator coupled to the first resonator, and an output waveguide coupled to the second resonator. The second resonator is configured to convert the pump photons into photon pairs. The second resonator and the first resonator are configured to cause a coupling-induced resonance splitting in the second resonator or the first resonator. The second resonator and the output waveguide are configured to couple the photon pairs from the second resonator into the output waveguide. In some embodiments, the photo-pair source includes one or more tuners for tuning at least one of the first resonator or the second resonator.
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公开(公告)号：US11658254B2
公开(公告)日：2023-05-23
申请号：US17688769
申请日：2022-03-07
Applicant: PSIQUANTUM CORP.
Inventor： Faraz Najafi , Mark Thompson , Damien Bonneau , Joaquin Matres Abril
IPC: H01L31/0352 , H01L31/18 , H01L31/0232 , H01L31/109 , H01L39/24 , G01J1/42 , H01L39/10 , G01J1/44
CPC classification number: H01L31/035227 , G01J1/42 , G01J1/44 , H01L31/02327 , H01L31/109 , H01L31/18 , H01L39/10 , H01L39/24 , H01L39/2416 , G01J2001/442
Abstract: A device includes a first semiconductor layer; a portion of a second semiconductor layer disposed on the first semiconductor layer; and a third semiconductor layer including a first region disposed on the portion of the second semiconductor layer and a second region disposed on the first semiconductor layer. A thickness of the first region is less than a predefined thickness. The device also includes an etch stop layer disposed on the third semiconductor layer; a plurality of distinct portions of a fourth semiconductor layer disposed on the etch stop layer and exposing one or more distinct portions of the etch stop layer over the portion of the second semiconductor layer; and a plurality of distinct portions of a superconducting layer disposed on the plurality of distinct portions of the fourth semiconductor layer and the exposed one or more distinct portions of the etch stop layer.
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Patent Agency Ranking
公开(公告)号：US11271125B2
公开(公告)日：2022-03-08
申请号：US16848662
申请日：2020-04-14
Applicant: PSIQUANTUM CORP.
Inventor： Faraz Najafi , Mark Thompson , Damien Bonneau , Joaquin Matres Abril
IPC: H01L31/0352 , H01L31/18 , H01L31/0232 , H01L31/109 , H01L39/24 , G01J1/42 , H01L39/10 , G01J1/44
Abstract: A device includes a first semiconductor layer; a portion of a second semiconductor layer disposed on the first semiconductor layer; and a third semiconductor layer including a first region disposed on the portion of the second semiconductor layer and a second region disposed on the first semiconductor layer. A thickness of the first region is less than a predefined thickness. The device also includes an etch stop layer disposed on the third semiconductor layer; a plurality of distinct portions of a fourth semiconductor layer disposed on the etch stop layer and exposing one or more distinct portions of the etch stop layer over the portion of the second semiconductor layer; and a plurality of distinct portions of a superconducting layer disposed on the plurality of distinct portions of the fourth semiconductor layer and the exposed one or more distinct portions of the etch stop layer.
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公开(公告)号：US11262505B2
公开(公告)日：2022-03-01
申请号：US17013203
申请日：2020-09-04
Applicant: PSIQUANTUM CORP.
Inventor： Naomi Nickerson , Damien Bonneau , Terence Rudolph
Abstract: A device includes a plurality of photon sources coupled to a plurality of output terminals. The plurality of photon sources are coupled together, by a first switch layer, into a plurality of photon source groups. The first switch layer comprises a plurality of switches. The device further includes a second switch layer coupled to output terminals of the first switch layer. The second switch layer includes a plurality of second layer n-by-n switches and a plurality of second layer l-by-l switches, wherein l is less than n. At least two output terminals from two respective photon sources residing within a first photon source group of the plurality of photon source groups and a second photon source group of the plurality of photon source groups are coupled directly to respective output terminals of the device without being coupled to any intervening second switch from the second switch layer.
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公开(公告)号：US11194095B2
公开(公告)日：2021-12-07
申请号：US16856948
申请日：2020-04-23
Applicant: PSIQUANTUM CORP.
Inventor： Naomi Nickerson , Damien Bonneau , Terence Rudolph
Abstract: A device (e.g., a photonic multiplexer) is provided that includes a plurality of first switches. Each first switch in the plurality of first switches includes a plurality of first channels. Each first switch is configured to shift photons in the plurality of first channels by zero or more channels, based on first configuration information provided to the first switch. The device further includes a plurality of second switches. Each second switch includes a plurality of second channels. Each second channel is coupled with a respective first channel from a distinct first switch of the plurality of first switches. Each second switch is configured to shift photons in the plurality of second channels by zero or more channels, based on second configuration information provided to the second switch.
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公开(公告)号：US10677985B2
公开(公告)日：2020-06-09
申请号：US16231022
申请日：2018-12-21
Applicant: PsiQuantum Corp.
Inventor： Naomi Nickerson , Damien Bonneau , Terence Rudolph
Abstract: A device (e.g., a photonic multiplexer) is provided that includes a plurality of first switches. Each first switch in the plurality of first switches includes a plurality of first channels. Each first switch is configured to shift photons in the plurality of first channels by zero or more channels, based on first configuration information provided to the first switch. The device further includes a plurality of second switches. Each second switch includes a plurality of second channels. Each second channel is coupled with a respective first channel from a distinct first switch of the plurality of first switches. Each second switch is configured to shift photons in the plurality of second channels by zero or more channels, based on second configuration information provided to the second switch.
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公开(公告)号：US10651325B2
公开(公告)日：2020-05-12
申请号：US16228441
申请日：2018-12-20
Applicant: PsiQuantum Corp.
Inventor： Faraz Najafi , Mark Thompson , Damien Bonneau , Joaquin Matres Abril
IPC: H01L31/0352 , H01L31/18 , H01L31/0232 , H01L31/109 , H01L39/24 , G01J1/42 , H01L39/10 , G01J1/44
Abstract: A device includes a first semiconductor layer; a portion of a second semiconductor layer disposed on the first semiconductor layer; and a third semiconductor layer including a first region disposed on the portion of the second semiconductor layer and a second region disposed on the first semiconductor layer. A thickness of the first region is less than a predefined thickness. The device also includes an etch stop layer disposed on the third semiconductor layer; a plurality of distinct portions of a fourth semiconductor layer disposed on the etch stop layer and exposing one or more distinct portions of the etch stop layer over the portion of the second semiconductor layer; and a plurality of distinct portions of a superconducting layer disposed on the plurality of distinct portions of the fourth semiconductor layer and the exposed one or more distinct portions of the etch stop layer.
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