公开(公告)号：US20180254335A1

公开(公告)日：2018-09-06

申请号：US15479247

申请日：2017-04-04

Applicant: Purdue Research Foundation

Inventor： Hesameddin Ilatikhameneh ,  Tarek Ameen Beshari ,  Bozidar Novakovic ,  Gerhard Klimeck ,  Rajib Rahman

IPC: H01L29/739 ,  H01L29/10 ,  H01L29/08 ,  H01L29/267

CPC classification number: H01L29/7391 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/267

Abstract: A tunnel field effect transistor (TFET) device is disclosed. The TFET includes a substrate, heavily doped source and drain regions disposed at opposite ends of the substrate separated by a channel region forming a PiN or NiP structure, the channel region including a first substantially parallelogram portion having a first length defined along a longitudinal axis extending from the source region to the drain region and a second substantially parallelogram portion having a second length defined along the longitudinal axis larger than the first length, the TFET device having an effective channel length defined along the longitudinal axis that is an average of the first and second lengths. The channel region includes a channel material with a first effective mass along a longitudinal axis extending from the source region to the drain region and a second effective mass along a lateral axis perpendicular to the longitudinal axis.

公开(公告)号：US10061877B2

公开(公告)日：2018-08-28

申请号：US15859610

申请日：2017-12-31

Applicant: Purdue Research Foundation

Inventor： Gerhard Klimeck ,  Mykhailo Povolotskyi ,  Tillmann C Kubis ,  Ganesh Hegde

IPC: G06F17/10 ,  G06F17/50

CPC classification number: G06F17/5009 ,  G06F2217/16

Abstract: A method for modeling a material at least partially-defined by atomic information includes, for each of a plurality of configurations of the material, determining energy moments for a density of states of the respective configuration of the material, and generating a tight binding Hamiltonian matrix for the respective configuration of the material. The method further includes, for each of the plurality of configurations of the material, forming a tight binding model of the configuration of the material by resolving a linking of (i) the energy moments for the density of states of the material to (ii) the tight binding Hamiltonian matrix for the material. Still further the method includes, based on the tight binding models for each of the configurations of the material, forming an environmentally-adapted tight binding model.

公开(公告)号：US09858365B2

公开(公告)日：2018-01-02

申请号：US14523135

申请日：2014-10-24

Applicant: PURDUE RESEARCH FOUNDATION

Inventor： Gerhard Klimeck ,  Mykhailo Povolotskyi ,  Tillmann Christoph Kubis ,  Ganesh Hegde

IPC: G06F17/50

CPC classification number: G06F17/5009 ,  G06F2217/16

Abstract: A method for modeling a material at least partially-defined by atomic information includes, for each of a plurality of configurations of the material, determining energy moments for a density of states of the respective configuration of the material, and generating a tight binding Hamiltonian matrix for the respective configuration of the material. The method further includes, for each of the plurality of configurations of the material, forming a tight binding model of the configuration of the material by resolving a linking of (i) the energy moments for the density of states of the material to (ii) the tight binding Hamiltonian matrix for the material. Still further the method includes, based on the tight binding models for each of the configurations of the material, forming an environmentally-adapted tight binding model.

公开(公告)号：US20150120259A1

公开(公告)日：2015-04-30

申请号：US14523135

申请日：2014-10-24

Applicant: PURDUE RESEARCH FOUNDATION

Inventor： Gerhard Klimeck ,  Mykhailo Povolotskyi ,  Tillmann Christoph Kubis ,  Ganesh Hegde

IPC: G06F17/50

CPC classification number: G06F17/5009 ,  G06F2217/16

Abstract: A method for modeling a material at least partially-defined by atomic information includes, for each of a plurality of configurations of the material, determining energy moments for a density of states of the respective configuration of the material, and generating a tight binding Hamiltonian matrix for the respective configuration of the material. The method further includes, for each of the plurality of configurations of the material, forming a tight binding model of the configuration of the material by resolving a linking of (i) the energy moments for the density of states of the material to (ii) the tight binding Hamiltonian matrix for the material. Still further the method includes, based on the tight binding models for each of the configurations of the material, forming an environmentally-adapted tight binding model.

Abstract translation: 用于对至少部分地由原子信息定义的材料进行建模的材料的方法包括对于所述材料的多个配置中的每一个，确定所述材料的各个配置的状态密度的能量矩，以及生成紧密结合的哈密尔顿矩阵 用于材料的各自配置。 该方法还包括对于材料的多个构造中的每一个，通过分解（i）材料的状态密度的能量矩与（ii）的材料的形状的紧密结合模型， 用于材料的紧结合哈密尔顿矩阵。 此外，该方法还包括基于材料的每种构造的紧密结合模型，形成环境适应的紧密结合模型。