公开(公告)号：US10141436B2

公开(公告)日：2018-11-27

申请号：US15479247

申请日：2017-04-04

Applicant: Purdue Research Foundation

Inventor： Hesameddin Ilatikhameneh ,  Tarek Ameen Beshari ,  Bozidar Novakovic ,  Gerhard Klimeck ,  Rajib Rahman

IPC: H01L29/768 ,  H01L29/739 ,  H01L29/267 ,  H01L29/08 ,  H01L29/10

Abstract: A tunnel field effect transistor (TFET) includes a substrate, heavily doped source and drain regions disposed at opposite ends of a channel region forming a PiN or NiP structure, the channel region including a first substantially parallelogram portion having a first length defined along a longitudinal axis extending from the source region to the drain region and a second substantially parallelogram portion having a second length defined along the longitudinal axis larger than the first length, the TFET device having an effective channel length that is an average of the first and second lengths. The channel region includes a channel material with a first effective mass along a longitudinal axis extending from the source region to the drain region and a second effective mass along a lateral axis perpendicular to the longitudinal axis, the first effective mass being greater than the second effective mass.

公开(公告)号：US20180254335A1

公开(公告)日：2018-09-06

申请号：US15479247

申请日：2017-04-04

Applicant: Purdue Research Foundation

Inventor： Hesameddin Ilatikhameneh ,  Tarek Ameen Beshari ,  Bozidar Novakovic ,  Gerhard Klimeck ,  Rajib Rahman

IPC: H01L29/739 ,  H01L29/10 ,  H01L29/08 ,  H01L29/267

CPC classification number: H01L29/7391 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/267

Abstract: A tunnel field effect transistor (TFET) device is disclosed. The TFET includes a substrate, heavily doped source and drain regions disposed at opposite ends of the substrate separated by a channel region forming a PiN or NiP structure, the channel region including a first substantially parallelogram portion having a first length defined along a longitudinal axis extending from the source region to the drain region and a second substantially parallelogram portion having a second length defined along the longitudinal axis larger than the first length, the TFET device having an effective channel length defined along the longitudinal axis that is an average of the first and second lengths. The channel region includes a channel material with a first effective mass along a longitudinal axis extending from the source region to the drain region and a second effective mass along a lateral axis perpendicular to the longitudinal axis.

公开(公告)号：US10680088B2

公开(公告)日：2020-06-09

申请号：US16201960

申请日：2018-11-27

Applicant: Purdue Research Foundation

Inventor： Hesameddin Ilatikhameneh ,  Tarek Ameen Beshari ,  Bozidar Novakovic ,  Gerhard Klimeck ,  Rajib Rahman

IPC: H01L29/739 ,  H01L29/267 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423

Abstract: A tunnel field effect transistor (TFET) device includes a substrate, heavily doped source and drain regions disposed at opposite ends of a channel region forming a PiN or NiP structure, the channel region including a first substantially parallelogram portion having a first length defined along a longitudinal axis extending from the source region to the drain region and a second substantially parallelogram portion having a second length defined along the longitudinal axis larger than the first length, the TFET device having an effective channel length that is an average of the first and second lengths. The channel region includes a channel material with a first effective mass along a longitudinal axis extending from the source region to the drain region and a second effective mass along a lateral axis perpendicular to the longitudinal axis, the first effective mass being greater than the second effective mass.

公开(公告)号：US20200027974A1

公开(公告)日：2020-01-23

申请号：US16201960

申请日：2018-11-27

Applicant: Purdue Research Foundation

Inventor： Hesameddin Ilatikhameneh ,  Tarek Ameen Beshari ,  Bozidar Novakovic ,  Gerhard Klimeck ,  Rajib Rahman

IPC: H01L29/739 ,  H01L29/267 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423

Abstract: A tunnel field effect transistor (TFET) device includes a substrate, heavily doped source and drain regions disposed at opposite ends of a channel region forming a PiN or NiP structure, the channel region including a first substantially parallelogram portion having a first length defined along a longitudinal axis extending from the source region to the drain region and a second substantially parallelogram portion having a second length defined along the longitudinal axis larger than the first length, the TFET device having an effective channel length that is an average of the first and second lengths. The channel region includes a channel material with a first effective mass along a longitudinal axis extending from the source region to the drain region and a second effective mass along a lateral axis perpendicular to the longitudinal axis, the first effective mass being greater than the second effective mass.