公开(公告)号：US20190203065A1

公开(公告)日：2019-07-04

申请号：US16222064

申请日：2018-12-17

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Irvinder Kaur ,  Chunyi Wu ,  Joshua A. Kaitz ,  Mingqi Li ,  Doris Kang ,  Xisen Hou ,  Cong Liu

IPC: C09D133/02 ,  C09D133/06 ,  G03F7/004 ,  G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

CPC classification number: C09D133/02 ,  C09D133/06 ,  G03F7/0046 ,  G03F7/11 ,  G03F7/162 ,  G03F7/2041 ,  G03F7/32

Abstract: Photoresist topcoat compositions, comprising: a first polymer that is aqueous base soluble and is present in an amount of from 70 to 99 wt % based on total solids of the composition; a second polymer comprising a repeat unit of general formula (IV) and a repeat unit of general formula (V): wherein: R5 independently represents H, halogen atom, C1-C3 alkyl, or C1-C3 haloalkyl; R6 represents linear, branched or cyclic C1 to C20 fluoroalkyl; R7 represents linear, branched or cyclic C1 to C20 fluoroalkyl; L3 represents a multivalent linking group; and m is an integer of from 1 to 5; wherein the second polymer is free of non-fluorinated side chains; and wherein the second polymer is present in an amount of from 1 to 30 wt % based on total solids of the composition and a solvent. The invention finds particular applicability in the manufacture of semiconductor devices.

公开(公告)号：US20160070172A1

公开(公告)日：2016-03-10

申请号：US14685290

申请日：2015-04-13

Applicant: Rohm and Haas Electronic Materials, LLC

Inventor： Deyan Wang ,  Chunyi Wu ,  George G. Barclay ,  Cheng-Bai Xu

IPC: G03F7/20 ,  G03F7/039

CPC classification number: G03F7/2041 ,  G03F7/0046 ,  G03F7/0048 ,  G03F7/0382 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0757

Abstract: New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sulfonamide substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Abstract translation: 提供了可用于浸没式光刻的新的光致抗蚀剂组合物。 本发明优选的光致抗蚀剂组合物包含一种或多种具有磺酰胺取代基的材料。 本发明的特别优选的光致抗蚀剂可以在浸没光刻处理期间将抗蚀剂材料的浸出降低到与抗蚀剂层接触的浸没流体中。

公开(公告)号：US12234369B2

公开(公告)日：2025-02-25

申请号：US16222064

申请日：2018-12-17

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Irvinder Kaur ,  Chunyi Wu ,  Joshua A. Kaitz ,  Mingqi Li ,  Doris Kang ,  Xisen Hou ,  Cong Liu

IPC: G03F7/004 ,  C09D133/02 ,  C09D133/06 ,  C09D133/08 ,  G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

Abstract: Photoresist topcoat compositions, comprising: a first polymer that is aqueous base soluble and is present in an amount of from 70 to 99 wt % based on total solids of the composition; a second polymer comprising a repeat unit of general formula (IV) and a repeat unit of general formula (V): wherein: R5 independently represents H, halogen atom, C1-C3 alkyl, or C1-C3 haloalkyl; R6 represents linear, branched or cyclic C1 to C20 fluoroalkyl; R7 represents linear, branched or cyclic C1 to C20 fluoroalkyl; L3 represents a multivalent linking group; and m is an integer of from 1 to 5; wherein the second polymer is free of non-fluorinated side chains; and wherein the second polymer is present in an amount of from 1 to 30 wt % based on total solids of the composition and a solvent. The invention finds particular applicability in the manufacture of semiconductor devices.

公开(公告)号：US20210200084A1

公开(公告)日：2021-07-01

申请号：US16731666

申请日：2019-12-31

Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC

Inventor： Jong Keun Park ,  Emad Aqad ,  Yang Song ,  Chunyi Wu ,  Colin Liu ,  Mingqi Li

IPC: G03F7/038 ,  C08F212/14 ,  G03F7/039

Abstract: A polymer comprising a first repeating unit derived from a monomer comprising a hydroxy-aryl group; a second repeating unit derived from a monomer comprising a hydroxy-aryl group protected with an acetal or ketal group; a third repeating unit derived from a (meth)acrylate monomer comprising a cycloaliphatic group; and a fourth repeating unit derived from a monomer comprising an acid-sensitive group, wherein the first, the second, the third, and the fourth repeating units are different from each other.

公开(公告)号：US10719014B2

公开(公告)日：2020-07-21

申请号：US13926764

申请日：2013-06-25

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Cong Liu ,  Chunyi Wu ,  Gerhard Pohlers ,  Gregory P. Prokopowicz ,  Mingqi Li ,  Cheng-Bai Xu

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/20 ,  G03F7/039 ,  C08F220/52 ,  C07C233/16 ,  C07C233/02 ,  C08F220/56 ,  C07C233/00 ,  C07C233/01 ,  C08F220/58

Abstract: New photoresist compositions are provided that comprise a component that comprises an amide group and multiple hydroxyl groups. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and an amide component with multiple hydroxyl groups that can function to decrease undesired photogenerated-acid diffusion out of unexposed regions of a photoresist coating layer.

公开(公告)号：US20190204741A1

公开(公告)日：2019-07-04

申请号：US16211482

申请日：2018-12-06

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Joshua A. Kaitz ,  Chunyi Wu ,  Irvinder Kaur ,  Mingqi Li ,  Doris Kang ,  Xisen Hou ,  Cong Liu

IPC: G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  C09D133/14 ,  C09D133/08 ,  C09D133/16 ,  C08F220/28 ,  C08F220/24 ,  C08F220/18 ,  C08F220/06 ,  C09D133/02

CPC classification number: G03F7/11 ,  C08F220/06 ,  C08F220/18 ,  C08F220/24 ,  C08F220/28 ,  C08F2220/1808 ,  C08F2220/281 ,  C08F2220/282 ,  C08F2220/283 ,  C08F2220/286 ,  C09D133/02 ,  C09D133/08 ,  C09D133/14 ,  C09D133/16 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/38

Abstract: Photoresist topcoat compositions comprise: an aqueous base soluble polymer comprising as polymerized units a monomer of the following general formula (I): wherein: R1 is chosen from H, halogen atom, C1-C3 alkyl, or C1-C3 haloalkyl; R2 is independently chosen from substituted or unsubstituted C1-C12 alkyl or substituted or unsubstituted C5-C18 aryl; R3 and R4 are independently H, substituted or unsubstituted C1-C12 alkyl, substituted or unsubstituted C5-C18 aryl; X is a C2-C6 substituted or unsubstituted alkylene group; wherein X can optionally comprise one or more rings and together with R2 can optionally form a ring; L1 is a single bond or a linking group; p is an integer of from 1 to 50; and q is an integer of from 1 to 5; and a solvent. Substrates coated with the described topcoat compositions and methods of processing a photoresist composition are also provided. The invention finds particular applicability in the manufacture of semiconductor devices.

公开(公告)号：US09475763B2

公开(公告)日：2016-10-25

申请号：US14589759

申请日：2015-01-05

Applicant: Rohm and Haas Electronic Materials, LLC

Inventor： Cong Liu ,  Chunyi Wu ,  Gerhard Pohlers ,  Gregory P. Prokopowicz ,  Cheng-Bai Xu

IPC: G03F7/004 ,  C07C271/16 ,  G03F7/038 ,  G03F7/039 ,  G03F7/11 ,  G03F7/20 ,  G03F7/16 ,  G03F7/32

CPC classification number: C07C271/16 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/32

Abstract: New nitrogen-containing compounds are provided that comprise multiple hydroxyl moieties and photoresist compositions that comprise such nitrogen-containing compounds. Preferred nitrogen-containing compounds comprise 1) multiple hydroxyl substituents (i.e. 2 or more) and 2) one or more photoacid-labile groups.