公开(公告)号：US10133179B2

公开(公告)日：2018-11-20

申请号：US15224503

申请日：2016-07-29

Applicant: Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC

Inventor： Jin Wuk Sung ,  Mingqi Li ,  Jong Keun Park ,  Joshua A. Kaitz ,  Vipul Jain ,  Chunyi Wu ,  Phillip D. Hustad

IPC: C09D153/02 ,  G03F7/40 ,  C09D153/00 ,  G03F7/038 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38 ,  G03F7/039

Abstract: A pattern treatment method, comprising: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises: a block copolymer and an organic solvent, wherein the block copolymer comprises: (i) a first block comprising a first unit formed from 4-vinyl-pyridine, and (ii) a second block comprising a first unit formed from a vinyl aromatic monomer; and (c) removing residual pattern shrink composition from the substrate, leaving a coating of the block copolymer over the surface of the patterned feature, thereby providing a reduced pattern spacing as compared with a pattern spacing of the patterned feature prior to coating the pattern treatment composition. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.

公开(公告)号：US20180031975A1

公开(公告)日：2018-02-01

申请号：US15224503

申请日：2016-07-29

Applicant: Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC

Inventor： Jin Wuk Sung ,  Mingqi Li ,  Jong Keun Park ,  Joshua A. Kaitz ,  Vipul Jain ,  Chunyi Wu ,  Phillip D. Hustad

IPC: G03F7/40 ,  C09D153/00 ,  G03F7/32 ,  G03F7/038 ,  G03F7/20 ,  G03F7/38

CPC classification number: G03F7/405 ,  C09D153/00 ,  G03F7/038 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/32 ,  G03F7/325 ,  G03F7/38

Abstract: A pattern treatment method, comprising: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises: a block copolymer and an organic solvent, wherein the block copolymer comprises: (i) a first block comprising a first unit formed from 4-vinyl-pyridine, and (ii) a second block comprising a first unit formed from a vinyl aromatic monomer; and (c) removing residual pattern shrink composition from the substrate, leaving a coating of the block copolymer over the surface of the patterned feature, thereby providing a reduced pattern spacing as compared with a pattern spacing of the patterned feature prior to coating the pattern treatment composition. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.

公开(公告)号：US20150353482A1

公开(公告)日：2015-12-10

申请号：US14589759

申请日：2015-01-05

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Cong Liu ,  Chunyi Wu ,  Gerhard Pohlers ,  Gregory P. Prokopowicz ,  Cheng-Bai Xu

IPC: C07C271/16 ,  G03F7/32 ,  G03F7/20 ,  G03F7/004 ,  G03F7/16

CPC classification number: C07C271/16 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/32

Abstract: New nitrogen-containing compounds are provided that comprise multiple hydroxyl moieties and photoresist compositions that comprise such nitrogen-containing compounds. Preferred nitrogen-containing compounds comprise 1) multiple hydroxyl substituents (i.e. 2 or more) and 2) one or more photoacid-labile groups.

Abstract translation: 提供新的含氮化合物，其包含多个羟基部分和包含这种含氮化合物的光致抗蚀剂组合物。 优选的含氮化合物包括1）多个羟基取代基（即2个或更多个）和2）一个或多个光致酸不稳定基团。

公开(公告)号：US09274427B2

公开(公告)日：2016-03-01

申请号：US14301177

申请日：2014-06-10

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Deyan Wang ,  Chunyi Wu

IPC: G03F7/004 ,  G03F7/20 ,  C08F18/00 ,  G03F7/11 ,  C08L33/16 ,  H01L21/027

CPC classification number: G03F7/11 ,  C08F220/38 ,  C08F220/56 ,  C08L33/16 ,  C08L2205/025 ,  C08L2205/03 ,  G03F7/0046 ,  G03F7/2041 ,  H01L21/0274

Abstract: Topcoat layer compositions are provided that are applied above a photoresist composition. The compositions find particular applicability to immersion lithography processing.

Abstract translation: 提供了在光致抗蚀剂组合物上施加的面漆层组合物。 该组合物特别适用于浸渍光刻加工。

公开(公告)号：US11846885B2

公开(公告)日：2023-12-19

申请号：US14577473

申请日：2014-12-19

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Cong Liu ,  Doris H. Kang ,  Deyan Wang ,  Cheng-Bai Xu ,  Mingqi Li ,  Chunyi Wu

IPC: G03F7/20 ,  G03F7/11 ,  G03F7/16 ,  G03F7/32 ,  C09D201/00 ,  C09D201/02 ,  C08F220/10 ,  C09D7/20 ,  C08L101/12 ,  C09D133/14 ,  C09D133/16 ,  H01L21/027 ,  C08K5/101 ,  C08K5/05

CPC classification number: G03F7/2041 ,  C08F220/10 ,  C08L101/12 ,  C09D7/20 ,  C09D133/14 ,  C09D201/00 ,  C09D201/02 ,  G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  C08K5/05 ,  C08K5/101 ,  C09D133/16 ,  H01L21/0271 ,  C08L101/12 ,  C08K5/05 ,  C08K5/101 ,  C08L101/12

Abstract: Topcoat compositions are provided that can be used in immersion lithography to form photoresist patterns. The topcoat compositions include a solvent system that comprises 1) a first organic solvent represented by formula (I),






wherein R1 and R2 are alkyl groups of 3-8 carbons and the total number of carbons of R1 and R2 is greater than 6; and
2) a second organic solvent that is a C4 to C10 monovalent alcohol.

公开(公告)号：US10558122B2

公开(公告)日：2020-02-11

申请号：US14685290

申请日：2015-04-13

Applicant: Rohm and Haas Electronic Materials, LLC

Inventor： Deyan Wang ,  Chunyi Wu ,  George G. Barclay ,  Cheng-Bai Xu

IPC: G03F7/20 ,  G03F7/04 ,  G03F7/039 ,  G03F7/004 ,  G03F7/038 ,  G03F7/075

Abstract: New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sulfonamide substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

公开(公告)号：US10527934B2

公开(公告)日：2020-01-07

申请号：US13665232

申请日：2012-10-31

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Gerhard Pohlers ,  Cong Liu ,  Cheng-Bai Xu ,  Chunyi Wu

IPC: G03F7/004 ,  C07C211/63 ,  C07C211/64 ,  G03F7/20 ,  G03F7/039

Abstract: New photoresist compositions are provided that comprise a component that comprises a radiation-insensitive ionic compound. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and a radiation-insensitive ionic compound that can function to decrease undesired photogenerated-acid diffusion out of unexposed regions of a photoresist coating layer.

公开(公告)号：US11940731B2

公开(公告)日：2024-03-26

申请号：US16449955

申请日：2019-06-24

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Irvinder Kaur ,  Cong Liu ,  Doris Kang ,  Chunyi Wu

IPC: G03F7/11 ,  C09D133/14 ,  C09D133/16 ,  C08F220/28 ,  C08F220/38 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38

CPC classification number: G03F7/11 ,  C09D133/14 ,  C09D133/16 ,  C08F220/281 ,  C08F220/283 ,  C08F220/382 ,  C08F220/387 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/38

Abstract: Photoresist topcoat compositions comprise: a matrix polymer and a surface active polymer, wherein the surface active polymer comprises polymerized units of the following general formula (I):




wherein: R1 represents a hydrogen atom, a halogen atom, a C1-C4 alkyl group, or a C1-C4 haloalkyl group; R2 independently represents a hydrogen atom or an optionally substituted alkyl group, wherein at least one R2 is not a hydrogen atom, wherein the R2 groups taken together optionally form a cyclic structure, and wherein the total number of carbon atoms for the R2 groups taken together is from 2 to 20; R3 represents an optionally substituted C1-C4 alkylene group, wherein an R2 group optionally forms a cyclic structure with R3; and R4 independently represents C1-C4 fluoroalkyl groups; wherein the total polymerized units of general formula (I) are present in the surface active polymer in an amount of 95 wt % or more based on total polymerized units of the surface active polymer; and wherein the surface active polymer is present in the composition in an amount of from 0.1 to 30 wt % based on total solids of the composition; and an organic-based solvent system comprising a plurality of organic solvents. The invention finds particular applicability in the manufacture of semiconductor devices.

公开(公告)号：US11809077B2

公开(公告)日：2023-11-07

申请号：US17198749

申请日：2021-03-11

Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC

Inventor： Thomas Cardolaccia ,  Jason A. DeSisto ,  Choong-Bong Lee ,  Mingqi Li ,  Tomas Marangoni ,  Chunyi Wu ,  Cong Liu ,  Gregory P. Prokopowicz

IPC: G03F7/004 ,  C08F220/28 ,  C08F220/18 ,  G03F7/027

CPC classification number: G03F7/0045 ,  C08F220/18 ,  C08F220/281 ,  G03F7/027

Abstract: A photoresist composition comprises a first polymer formed by free radical polymerization. The first polymer comprises polymerized units formed from a monomer that comprises an ethylenically unsaturated double bond and an acid-labile group; a photoacid generator; a quencher of formula (1):




and a solvent.

公开(公告)号：US20200004152A1

公开(公告)日：2020-01-02

申请号：US16449955

申请日：2019-06-24

Applicant: Rohm and Haas Electronic Materials LLC

Inventor： Irvinder KAUR ,  Cong Liu ,  Doris Kang ,  Chunyi Wu

IPC: G03F7/11 ,  C08F220/28 ,  C08F220/38 ,  C09D133/16 ,  C09D133/14

Abstract: Photoresist topcoat compositions comprise: a matrix polymer and a surface active polymer, wherein the surface active polymer comprises polymerized units of the following general formula (I): wherein: R1 represents a hydrogen atom, a halogen atom, a C1-C4 alkyl group, or a C1-C4 haloalkyl group; R2 independently represents a hydrogen atom or an optionally substituted alkyl group, wherein at least one R2 is not a hydrogen atom, wherein the R2 groups taken together optionally form a cyclic structure, and wherein the total number of carbon atoms for the R2 groups taken together is from 2 to 20; R3 represents an optionally substituted C1-C4 alkylene group, wherein an R2 group optionally forms a cyclic structure with R3; and R4 independently represents C1-C4 fluoroalkyl groups; wherein the total polymerized units of general formula (I) are present in the surface active polymer in an amount of 95 wt % or more based on total polymerized units of the surface active polymer; and wherein the surface active polymer is present in the composition in an amount of from 0.1 to 30 wt % based on total solids of the composition; and an organic-based solvent system comprising a plurality of organic solvents. The invention finds particular applicability in the manufacture of semiconductor devices.