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    Coating compositions and methods of forming electronic devices
    15.
    发明授权
    Coating compositions and methods of forming electronic devices 有权

    公开(公告)号：US11817316B2

    公开(公告)日：2023-11-14

    申请号：US17231339

    申请日：2021-04-15

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Sheng Liu ,  James F. Cameron ,  Iou-Sheng Ke ,  Shintaro Yamada ,  Li Cui

    IPC: H01L21/027 ,  C09D163/00 ,  C08G59/62 ,  C09D7/63 ,  C07C33/28 ,  C07C43/205 ,  C07C69/76 ,  C09D7/20 ,  G03F7/20 ,  G03F7/00 ,  G03F7/075 ,  G03F7/09 ,  G03F7/11 ,  G03F7/004 ,  G03F1/56 ,  G03F7/025 ,  G03F7/16 ,  G03F7/26

    CPC classification number: H01L21/0276 ,  C09D163/00 ,  G03F7/0035 ,  G03F7/075 ,  G03F7/091 ,  G03F7/11

    Abstract: Coating compositions comprise: a B-staged reaction product of one or more compounds comprising: a core chosen from C6-50 carbocyclic aromatic, C2-50 heterocyclic aromatic, C1-20 aliphatic, C1-20 heteroaliphatic, C3-20 cycloaliphatic, and C2-20 heterocycloaliphatic, each of which may be substituted or unsubstituted; and two or more substituents of formula (1) attached to the core:




    wherein: Ar1 is an aromatic group independently chosen from C6-50 carbocyclic aromatic and C2-50 heteroaromatic, each of which may be substituted or unsubstituted; Z is a substituent independently chosen from OR1, protected hydroxyl, carboxyl, protected carboxyl, SR1, protected thiol, —O—C(═O)—C1-6 alkyl, halogen, and NHR2; wherein each R1 is independently chosen from H, C1-10 alkyl, C2-10 unsaturated hydrocarbyl, and C5-30 aryl; each R2 is independently chosen from H, C1-10 alkyl, C2-10 unsaturated hydrocarbyl, C5-30 aryl, C(═O)—R1, and S(═O)2—R1; x is an integer from 1 to the total number of available aromatic ring atoms in Ar1; and * denotes the point of attachment to the core; provided that when the core comprises an aromatic ring, no substituents of formula (1) are in an ortho position to each other on the same aromatic ring of the core; and one or more solvents, wherein the total solvent content is from 50 to 99 wt % based on the coating composition. Coated substrates formed with the coating compositions and methods of forming electronic devices using the compositions are also provided. The compositions, coated substrates and methods find particular applicability in the manufacture of semiconductor devices.

    PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS
    16.
    发明公开
    PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS 审中-公开

    公开(公告)号：US20230213862A1

    公开(公告)日：2023-07-06

    申请号：US18085098

    申请日：2022-12-20

    Applicant: ROHM AND HAAS ELECTRONIC MATERIALS LLC

    Inventor： Li Cui ,  Suzanne M. Coley ,  Emad Aqad ,  Yinjie Cen ,  Jong Keun Park ,  Choong-Bong Lee ,  James F. Cameron

    IPC: G03F7/039

    CPC classification number: G03F7/0392

    Abstract: A photoresist composition, comprising: a first polymer comprising: a first repeating unit comprising a hydroxyaryl group; a second repeating unit comprising a first acid-labile group; and a third repeating unit comprising a first base-soluble group having a pKa of 12 or less, and not comprising a hydroxyaryl group; wherein the first, second, and third repeating units of the first polymer are different from each other, and the first polymer is free of lactone groups; a second polymer comprising: a first repeating unit comprising a second acid-labile group, a second repeating unit comprising a lactone group, and a third repeating unit comprising a second base-soluble group having a pKa of 12 or less; wherein the first, second, and third repeating units of the second polymer are structurally different from each other; and a solvent, wherein the first polymer and the second polymer are different from each other.

    GAP-FILLING METHOD
    20.
    发明申请
    GAP-FILLING METHOD 审中-公开

    公开(公告)号：US20190146346A1

    公开(公告)日：2019-05-16

    申请号：US16167568

    申请日：2018-10-23

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： James F. Cameron ,  Keren Zhang ,  Li Cui ,  Daniel Greene ,  Shintaro Yamada

    IPC: G03F7/20 ,  C08G61/10 ,  C08G61/12

    Abstract: A method of manufacturing a semiconductor device comprising: providing a semiconductor device substrate having a relief image on a surface of the substrate, the relief image having a plurality of gaps to be filled; applying a coating composition to the relief image to provide a coating layer, wherein the coating composition comprises (i) a polyarylene oligomer comprising as polymerized units one or more first monomers having two or more cyclopentadienone moieties and one or more second monomers having an aromatic moiety and two or more alkynyl moieties; wherein the polyarylene oligomer has a Mw of 1000 to 6000 Da, a PDI of 1 to 2, and a molar ratio of total first monomers to total second monomers of 1:>1; and (ii) one or more organic solvents; curing the coating layer to form a polyarylene film; patterning the polyarylene film; and transferring the pattern to the semiconductor device substrate.

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