公开(公告)号：US12266587B2

公开(公告)日：2025-04-01

申请号：US17805951

申请日：2022-06-08

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： SeungHyun Lee ,  HeeSoo Lee

IPC: H01L23/367 ,  H01L23/373 ,  H01L23/522

Abstract: A semiconductor device has a substrate and a semiconductor die disposed over the substrate. A tape is disposed over the semiconductor die. An encapsulant is deposited over the substrate, semiconductor die, and tape. The tape is removed to leave a cavity in the encapsulant over the semiconductor die. A shielding layer is formed over the encapsulant and semiconductor die. A heat spreader is disposed over the shielding layer. The heat spreader includes a protrusion extending into the cavity of the encapsulant.

公开(公告)号：US12218114B2

公开(公告)日：2025-02-04

申请号：US17452489

申请日：2021-10-27

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： KyungOe Kim ,  YoungCheol Kim ,  HeeSoo Lee

IPC: H01L25/16 ,  H01L21/56 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L31/12

Abstract: A semiconductor device has an interposer. A first semiconductor die with a photonic portion is disposed over the interposer. The photonic portion extends outside a footprint of the interposer. The interposer and first semiconductor die are disposed over a substrate. An encapsulant is deposited between the interposer and substrate. The photonic portion remains exposed from the encapsulant.

公开(公告)号：US20240183026A1

公开(公告)日：2024-06-06

申请号：US18440068

申请日：2024-02-13

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： OhHan Kim ,  HunTeak Lee ,  Sell Jung ,  HeeSoo Lee

IPC: C23C14/50 ,  C23C14/34 ,  H01L23/00 ,  H01L23/498 ,  H01L23/552

CPC classification number: C23C14/50 ,  C23C14/34 ,  H01L23/49838 ,  H01L23/552 ,  H01L24/16 ,  H01L2224/16227 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/3025

Abstract: A semiconductor manufacturing device has a cooling pad with a plurality of movable pins. The cooling pad includes a fluid pathway and a plurality of springs disposed in the fluid pathway. Each of the plurality of springs is disposed under a respective movable pin. A substrate includes an electrical component disposed over a surface of the substrate. The substrate is disposed over the cooling pad with the electrical component oriented toward the cooling pad. A force is applied to the substrate to compress the springs. At least one of the movable pins contacts the substrate. A cooling fluid is disposed through the fluid pathway.

公开(公告)号：US11932933B2

公开(公告)日：2024-03-19

申请号：US17814796

申请日：2022-07-25

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： OhHan Kim ,  HunTeak Lee ,  Sell Jung ,  HeeSoo Lee

IPC: C23C14/50 ,  C23C14/34 ,  H01L23/00 ,  H01L23/498 ,  H01L23/552

CPC classification number: C23C14/50 ,  C23C14/34 ,  H01L23/49838 ,  H01L23/552 ,  H01L24/16 ,  H01L2224/16227 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/3025

Abstract: A semiconductor manufacturing device has a cooling pad with a plurality of movable pins. The cooling pad includes a fluid pathway and a plurality of springs disposed in the fluid pathway. Each of the plurality of springs is disposed under a respective movable pin. A substrate includes an electrical component disposed over a surface of the substrate. The substrate is disposed over the cooling pad with the electrical component oriented toward the cooling pad. A force is applied to the substrate to compress the springs. At least one of the movable pins contacts the substrate. A cooling fluid is disposed through the fluid pathway.

公开(公告)号：US20230402383A1

公开(公告)日：2023-12-14

申请号：US18451743

申请日：2023-08-17

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： WoonJae Beak ,  MinSu Kim ,  HeeSoo Lee

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/31

CPC classification number: H01L23/53238 ,  H01L21/76838 ,  H01L23/31

Abstract: A semiconductor device has a substrate and a first conductive layer formed over the substrate. A second conductive layer is formed over the first conductive layer. The first conductive layer can be copper, and the second conductive layer can be nickel. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. A flux material is deposited over the second conductive layer by a printing process. An electrical component is disposed over the flux material, and the flux material is reflowed to make electrical connection between the electrical component and second conductive layer. The flux material substantially vaporizes during the reflow to reduce the occurrence of short circuits. The electrical components can be placed over the substrate with narrow spacing and higher density given the use of the flux material to make electrical connection. An encapsulant is deposited over the electrical component.

公开(公告)号：US11769730B2

公开(公告)日：2023-09-26

申请号：US17032576

申请日：2020-09-25

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： WoonJae Beak ,  MinSu Kim ,  HeeSoo Lee

IPC: H01L23/532 ,  H01L23/31 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/76838 ,  H01L23/31

Abstract: A semiconductor device has a substrate and a first conductive layer formed over the substrate. A second conductive layer is formed over the first conductive layer. The first conductive layer can be copper, and the second conductive layer can be nickel. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. A flux material is deposited over the second conductive layer by a printing process. An electrical component is disposed over the flux material, and the flux material is reflowed to make electrical connection between the electrical component and second conductive layer. The flux material substantially vaporizes during the reflow to reduce the occurrence of short circuits. The electrical components can be placed over the substrate with narrow spacing and higher density given the use of the flux material to make electrical connection. An encapsulant is deposited over the electrical component.

公开(公告)号：US20230268289A1

公开(公告)日：2023-08-24

申请号：US18309951

申请日：2023-05-01

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  Deokkyung Yang ,  HeeSoo Lee

IPC: H01L23/552 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L21/78

CPC classification number: H01L23/552 ,  H01L23/3107 ,  H01L21/56 ,  H01L24/09 ,  H01L21/78 ,  H01L24/17

Abstract: A semiconductor device has a substrate. A conductive layer is formed over the substrate and includes a ground plane. A first tab of the conductive layer extends from the ground plane and less than half-way across a saw street of the substrate. A shape of the first tab can include elliptical, triangular, parallelogram, or rectangular portions, or any combination thereof. An encapsulant is deposited over the substrate. The encapsulant and substrate are singulated through the saw street. An electromagnetic interference (EMI) shielding layer is formed over the encapsulant. The EMI shielding layer contacts the first tab of the conductive layer.

公开(公告)号：US11670618B2

公开(公告)日：2023-06-06

申请号：US17008918

申请日：2020-09-01

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  YongMin Kim ,  JaeHyuk Choi ,  YeoChan Ko ,  HeeSoo Lee

IPC: H01L25/065 ,  H01L21/56 ,  H01L25/00 ,  H01L23/552 ,  H01L21/683 ,  H01L23/31 ,  H01L25/16 ,  H01L23/00 ,  H01L21/66 ,  H01L23/538 ,  H01L21/48 ,  H01L23/498 ,  H01L23/50

CPC classification number: H01L25/0655 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/566 ,  H01L21/6835 ,  H01L23/3121 ,  H01L23/552 ,  H01L25/0652 ,  H01L25/16 ,  H01L25/50 ,  H01L21/486 ,  H01L22/14 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/50 ,  H01L23/5384 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/81 ,  H01L24/94 ,  H01L2221/68331 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11334 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16113 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81201 ,  H01L2224/81203 ,  H01L2224/81411 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81466 ,  H01L2224/81484 ,  H01L2224/81815 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/06537 ,  H01L2225/06572 ,  H01L2924/0105 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/15312 ,  H01L2924/18161 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/3025 ,  H01L2224/94 ,  H01L2224/11 ,  H01L2224/94 ,  H01L2224/03 ,  H01L2224/97 ,  H01L2224/81 ,  H01L2224/97 ,  H01L2224/83 ,  H01L2224/11901 ,  H01L2224/11849 ,  H01L2224/05124 ,  H01L2924/00014 ,  H01L2224/05147 ,  H01L2924/00014 ,  H01L2224/05111 ,  H01L2924/00014 ,  H01L2224/05155 ,  H01L2924/00014 ,  H01L2224/05144 ,  H01L2924/00014 ,  H01L2224/05139 ,  H01L2924/00014 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2924/00014 ,  H01L2224/05611 ,  H01L2924/00014 ,  H01L2224/05655 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05639 ,  H01L2924/00014 ,  H01L2224/13124 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2224/13155 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2224/13144 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2224/13139 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2224/13116 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2224/13113 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2224/13147 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/013 ,  H01L2924/01082 ,  H01L2924/00014 ,  H01L2224/13111 ,  H01L2924/013 ,  H01L2924/0105 ,  H01L2924/00014 ,  H01L2224/13116 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/81424 ,  H01L2924/00014 ,  H01L2224/81447 ,  H01L2924/00014 ,  H01L2224/81411 ,  H01L2924/00014 ,  H01L2224/81455 ,  H01L2924/00014 ,  H01L2224/81444 ,  H01L2924/00014 ,  H01L2224/81439 ,  H01L2924/00014 ,  H01L2224/81466 ,  H01L2924/00014 ,  H01L2224/81484 ,  H01L2924/00014

Abstract: A semiconductor device includes a substrate with an opening formed through the substrate. A first electronic component is disposed over the substrate outside a footprint of the first opening. A second electronic component is disposed over the substrate opposite the first electrical component. A third electronic component is disposed over the substrate adjacent to the first electronic component. The substrate is disposed in a mold including a second opening of the mold over a first side of the substrate. The mold contacts the substrate between the first electronic component and the third electronic component. An encapsulant is deposited into the second opening. The encapsulant flows through the first opening to cover a second side of the substrate. In some embodiments, a mold film is disposed in the mold, and an interconnect structure on the substrate is embedded in the mold film.

公开(公告)号：US11652065B2

公开(公告)日：2023-05-16

申请号：US17307727

申请日：2021-05-04

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： JinHee Jung ,  ChangOh Kim ,  HeeSoo Lee

IPC: H01L23/31 ,  H01L23/552 ,  H01L23/16 ,  H01L25/10 ,  H01L25/00 ,  H01L23/538

CPC classification number: H01L23/552 ,  H01L23/16 ,  H01L23/3107 ,  H01L23/5386 ,  H01L25/105 ,  H01L25/50 ,  H01L2225/1041

Abstract: An SIP module includes a plurality of electrical components mounted to an interconnect substrate. The electrical components and interconnect substrate are covered by an encapsulant. A conductive post is formed through the encapsulant. A plurality of openings is formed in the encapsulant by laser in a form of a circuit pattern. A conductive material is deposited over a surface of the encapsulant and into the openings to form an electrical circuit pattern. A portion of the conductive material is removed by a grinder to expose the electrical circuit pattern. The grinding operation planarizes the surface of the encapsulant and the electrical circuit pattern. The electrical circuit pattern can be a trace, contact pad, RDL, or other interconnect structure. The electrical circuit pattern can also be a shielding layer or antenna. An electrical component is disposed over the SIP module and electrical circuit pattern.

公开(公告)号：US10797024B2

公开(公告)日：2020-10-06

申请号：US16826169

申请日：2020-03-21

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  YongMin Kim ,  JaeHyuk Choi ,  YeoChan Ko ,  HeeSoo Lee

IPC: H01L23/552 ,  H01L25/065 ,  H01L21/56 ,  H01L25/00 ,  H01L21/683 ,  H01L23/31 ,  H01L25/16 ,  H01L23/00 ,  H01L21/66 ,  H01L23/538 ,  H01L21/48 ,  H01L23/498 ,  H01L23/50

Abstract: A semiconductor device includes a substrate with an opening formed through the substrate. A first electronic component is disposed over the substrate outside a footprint of the first opening. A second electronic component is disposed over the substrate opposite the first electrical component. A third electronic component is disposed over the substrate adjacent to the first electronic component. The substrate is disposed in a mold including a second opening of the mold over a first side of the substrate. The mold contacts the substrate between the first electronic component and the third electronic component. An encapsulant is deposited into the second opening. The encapsulant flows through the first opening to cover a second side of the substrate. In some embodiments, a mold film is disposed in the mold, and an interconnect structure on the substrate is embedded in the mold film.