公开(公告)号：US20240304711A1

公开(公告)日：2024-09-12

申请号：US18592816

申请日：2024-03-01

Applicant: STMicroelectronics International N.V.

Inventor： Cristina TRINGALI ,  Aurore CONSTANT ,  Maria Eloisa CASTAGNA ,  Ferdinando IUCOLANO

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/778 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462

Abstract: A HEMT transistor is formed on a semiconductor body having a semiconductive heterostructure. A gate region of a semiconductor material, is arranged on the semiconductor body and has lateral sides. Sealing regions of non-conductive material extend on the lateral sides of the gate region; and a passivation layer of non-conductive material has surface portions extending on the semiconductor body, on both sides of the gate region and at a distance therefrom. The sealing regions and the passivation regions have different characteristic, such as are of different material or have different thicknesses.

公开(公告)号：US20240304710A1

公开(公告)日：2024-09-12

申请号：US18591541

申请日：2024-02-29

Applicant: STMicroelectronics International N.V.

Inventor： Cristina TRINGALI ,  Aurore CONSTANT ,  Maria Eloisa CASTAGNA ,  Ferdinando IUCOLANO

IPC: H01L29/778 ,  H01L29/06 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/778 ,  H01L29/0603 ,  H01L29/402 ,  H01L29/66431 ,  H01L29/66462

Abstract: A HEMT transistor has a body having a top surface and a heterostructure, and a gate region having a semiconductor material and arranged on the top surface of the body. The gate region has a first lateral sidewall and a second lateral sidewall opposite to the first lateral sidewall. The HEMT device further has a sealing layer of non-conductive material that extends on and in contact with the first and the second lateral sidewalls of the gate region; and a passivation layer of non-conductive material that has a surface portion. The surface portion extends on the top surface of the body, laterally to the first lateral sidewall of the gate region. The sealing layer and the passivation layer have different geometrical parameters and/or are of different material.