公开(公告)号：US20240274702A1

公开(公告)日：2024-08-15

申请号：US18424471

申请日：2024-01-26

Applicant: STMicroelectronics International N.V.

Inventor： Aurore CONSTANT ,  Ferdinando IUCOLANO ,  Cristina TRINGALI ,  Maria Eloisa CASTAGNA

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66

CPC classification number: H01L29/778 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462

Abstract: A HEMT transistor includes: a first semiconductor layer; a gate located on a first face of the first semiconductor layer; and a first passivating layer made of a first dielectric material which extends over the said first face of the first semiconductor layer, the sides of the gate, and at least a peripheral portion of a face of the gate opposite with respect to the first semiconductor layer, wherein a second passivating layer made of a second dielectric material extends between the said face of the gate and the first passivating layer, the sides of the gate being free of the said second passivating layer.

公开(公告)号：US20250142865A1

公开(公告)日：2025-05-01

申请号：US18494401

申请日：2023-10-25

Applicant: STMicroelectronics International N.V.

Inventor： Aurore CONSTANT ,  Tariq WAKRIM ,  Ferdinando IUCOLANO

IPC: H01L29/778 ,  H01L21/265 ,  H01L21/266 ,  H01L29/20 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66

Abstract: A process for forming a high electron mobility transistor (HEMT) includes forming a semiconductor heterostructure including a channel layer of the HEMT, forming a gate layer of GaN on the channel layer, and patterning the gate layer to form a first gate finger, a second gate finger, and a gate arc connecting the first gate finger and the second gate finger. The process includes forming an isolation mask covering an active region of the semiconductor heterostructure and the gate arc and performing an ion bombardment process on an inactive region of the semiconductor heterostructure exposed by the isolation mask.

公开(公告)号：US20240266425A1

公开(公告)日：2024-08-08

申请号：US18422867

申请日：2024-01-25

Applicant: STMicroelectronics International N.V.

Inventor： Aurore CONSTANT ,  Ferdinando IUCOLANO ,  Cristina TRINGALI ,  Maria Eloisa CASTAGNA

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/778 ,  H01L29/66462

Abstract: The present disclosure relates to a method of forming an HEMT transistor, comprising the following successive steps: a) providing a stack comprising a semiconductor channel layer, a semiconductor barrier layer on top of and in contact with the semiconductor channel layer, and a semiconductor gate layer arranged on top of and in contact with the semiconductor barrier layer, the semiconductor gate layer comprising P-type dopant elements; and b) compensating for the P-type doping with oxygen atoms, in an upper portion of the semiconductor gate layer, by an oxygen anneal, so as to define a PN junction at the interface between the upper portion and a central portion of the semiconductor gate layer.

公开(公告)号：US20240194763A1

公开(公告)日：2024-06-13

申请号：US18523185

申请日：2023-11-29

Applicant: STMicroelectronics International N.V.

Inventor： Aurore CONSTANT ,  Ferdinando IUCOLANO ,  Cristina TRINGALI

IPC: H01L29/66 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778

CPC classification number: H01L29/66462 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7786

Abstract: The present disclosure relates to a HEMT transistor comprising a first semiconductor layer, a gate arranged on a first surface of the first semiconductor layer, a first passivation layer made of a first material on the sides of the gate, the first passivation layer further extending over a first portion of said surface of the first semiconductor layer, and a second passivation layer made of a second material different from the first material on a second portion of said surface of the first semiconductor layer next to the first passivation layer.