公开(公告)号：US09223642B2

公开(公告)日：2015-12-29

申请号：US13927435

申请日：2013-06-26

Applicant: Super Talent Technology, Corp.

Inventor： Frank Yu ,  Abraham C. Ma ,  Shimon Chen ,  Yi Syu Yan

IPC: G06F12/02 ,  G06F11/00 ,  G06F1/30 ,  G06F9/44

CPC classification number: G06F3/0619 ,  G06F1/30 ,  G06F3/0632 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F9/4418 ,  G06F11/00 ,  G06F11/1068 ,  G11C29/08 ,  G11C29/52

Abstract: A Green NAND Device (GND) driver application queries AC line and battery status and then stores an image of processor states and caches and a resume routine to DRAM when power failure occurs. A DRAM image is then stored to flash memory for a persistent mode when battery power is available. The image in DRAM may be a partial image that includes entries, flushed caches, processor contexts, ramdisks, write caches, and a resume context. Endurance of flash memory is increased by a Super Enhanced Endurance Device (SEED) SSD. In a power down mode, the GND driver limits DRAM use and only caches in DRAM data that can be deleted on power down. Host accesses to flash are intercepted by the GND driver and categorized by data type. Paging files and temporary files cached in DRAM are optionally written to flash.

Abstract translation: 绿色NAND器件（GND）驱动器应用程序查询交流线路和电池状态，然后在发生电源故障时将处理器状态和高速缓存的图像以及恢复例程存储到DRAM。 然后当电池电量可用时，DRAM图像被存储到闪存，用于持续模式。 DRAM中的图像可以是包括条目，刷新的高速缓存，处理器上下文，ramdisk，写高速缓存和恢复上下文的部分映像。 闪存的耐久性由超级增强型耐力设备（SEED）SSD增加。 在掉电模式下，GND驱动器限制DRAM使用，并且只能在掉电时可以删除的DRAM数据中缓存。 主机对闪存的访问由GND驱动程序拦截并按数据类型进行分类。 在DRAM中缓存的寻呼文件和临时文件可选地写入闪存。

公开(公告)号：US20140310574A1

公开(公告)日：2014-10-16

申请号：US14298808

申请日：2014-06-06

Applicant: SUPER TALENT TECHNOLOGY, CORP.

Inventor： Frank Yu ,  Abraham C. Ma ,  Shimon Chen

IPC: G06F11/10 ,  G11C29/00 ,  G06F3/06

CPC classification number: G06F11/1072 ,  G06F3/0616 ,  G06F3/0619 ,  G06F3/0659 ,  G06F3/0679 ,  G06F3/0685 ,  G06F12/0246 ,  G06F12/0804 ,  G06F12/0871 ,  G06F2212/401 ,  G06F2212/402 ,  G06F2212/7203 ,  G06F2212/7208 ,  G11C11/56 ,  G11C13/0004 ,  G11C29/72 ,  G11C29/765 ,  G11C2211/5641

Abstract: A controller for a Super Enhanced Endurance Device (SEED) or Solid-State Drive (SSD) increases flash endurance using a DRAM buffer. Host accesses to flash are intercepted by the controller and categorized as data types of paging files, temporary files, meta-data, and user data files, using address ranges and file extensions read from meta-data tables. Paging files and temporary files are optionally written to flash. Full-page and partial-page data are grouped into multi-page meta-pages by data type in the DRAM before storage by lower-level flash devices such as eMMC, UFS, or iSSD. Caches in the DRAM buffer for storing each data type are managed and flushed to the flash devices by the controller. Write dates are stored for pages or blocks for management functions. A spare/swap area in DRAM reduces flash wear. Reference voltages are adjusted when error correction fails.

Abstract translation: 超级增强型耐力设备（SEED）或固态硬盘（SSD）的控制器使用DRAM缓冲区增加闪存耐久性。 主机对闪存的访问由控制器拦截，并使用从元数据表读取的地址范围和文件扩展名将其分类为分页文件，临时文件，元数据和用户数据文件的数据类型。 分页文件和临时文件可选地写入闪存。 全页和部分页数据通过下层闪存设备（如eMMC，UFS或iSSD）存储之前的数据类型在DRAM中分组成多页元页面。 用于存储每种数据类型的DRAM缓冲器中的缓存被控制器管理并刷新到闪存设备。 存储用于管理功能的页面或块的写入日期。 DRAM中的备用/交换区域可减少闪存磨损。 当纠错失败时，调整参考电压。

公开(公告)号：US20190294345A1

公开(公告)日：2019-09-26

申请号：US15928014

申请日：2018-03-21

Applicant: Super Talent Technology Corp.

Inventor： Frank Yu ,  Abraham C. Ma ,  Shimon Chen ,  Yao-Tse Chang ,  Yan Zhou

IPC: G06F3/06 ,  G06F12/1009

Abstract: A Green NAND SSD (GNSD) controller receives reads and writes from a host and writes to flash memory. A SSD DRAM has a DRAM Translation Layer (ETL) with buffers managed by the GNSD controller. The GNSD controller performs deduplication, compression, encryption, high-level error-correction, and grouping of host data writes, and manages mapping tables to store host write data in the SSD DRAM to reduce writes to flash memory. The GNSD controller categorizes host writes as data types for paging files, temporary files, meta-data, and user data files, using address ranges and file extensions read from meta-data tables. Paging files and temporary files are optionally written to flash. Full-page and partial-page data are grouped into multi-page meta-pages by data type before storage by the GNSD controller. Status bits include two overwrite bits indicating frequently-written data that is retained in the SSD DRAM rather than being flushed to flash and re-allocated.

公开(公告)号：US09841911B2

公开(公告)日：2017-12-12

申请号：US14930801

申请日：2015-11-03

Applicant: Super Talent Technology, Corp.

Inventor： Frank Yu ,  Abraham C. Ma ,  Shimon Chen ,  Yi Syu Yan

IPC: G06F12/02 ,  G06F3/06 ,  G06F11/00 ,  G06F1/30 ,  G06F11/10 ,  G11C29/08 ,  G11C29/52 ,  G06F9/44

CPC classification number: G06F3/0619 ,  G06F1/30 ,  G06F3/0632 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F9/4418 ,  G06F11/00 ,  G06F11/1068 ,  G11C29/08 ,  G11C29/52

Abstract: A Green NAND Device (GND) driver application queries AC line and battery status and then stores an image of processor states and caches and a resume routine to DRAM when power failure occurs. A DRAM image is then stored to flash memory for a persistent mode when battery power is available. The image in DRAM may be a partial image that includes entries, flushed caches, processor contexts, ramdisks, write caches, and a resume context. Endurance of flash memory is increased by a Super Enhanced Endurance Device (SEED) SSD. In a power down mode, the GND driver limits DRAM use and only caches in DRAM data that can be deleted on power down. Host accesses to flash are intercepted by the GND driver and categorized by data type. Paging files and temporary files cached in DRAM are optionally written to flash.

公开(公告)号：US09405621B2

公开(公告)日：2016-08-02

申请号：US14298808

申请日：2014-06-06

Applicant: Super Talent Technology, Corp.

Inventor： Frank Yu ,  Abraham C. Ma ,  Shimon Chen

IPC: G06F12/00 ,  G06F13/00 ,  G06F13/28 ,  G06F11/10 ,  G06F3/06 ,  G11C29/00 ,  G06F12/02 ,  G11C11/56 ,  G06F12/08 ,  G11C13/00

CPC classification number: G06F11/1072 ,  G06F3/0616 ,  G06F3/0619 ,  G06F3/0659 ,  G06F3/0679 ,  G06F3/0685 ,  G06F12/0246 ,  G06F12/0804 ,  G06F12/0871 ,  G06F2212/401 ,  G06F2212/402 ,  G06F2212/7203 ,  G06F2212/7208 ,  G11C11/56 ,  G11C13/0004 ,  G11C29/72 ,  G11C29/765 ,  G11C2211/5641

Abstract: A controller for a Super Enhanced Endurance Device (SEED) or Solid-State Drive (SSD) increases flash endurance using a DRAM buffer. Host accesses to flash are intercepted by the controller and categorized as data types of paging files, temporary files, meta-data, and user data files, using address ranges and file extensions read from meta-data tables. Paging files and temporary files are optionally written to flash. Full-page and partial-page data are grouped into multi-page meta-pages by data type in the DRAM before storage by lower-level flash devices such as eMMC, UFS, or iSSD. Caches in the DRAM buffer for storing each data type are managed and flushed to the flash devices by the controller. Write dates are stored for pages or blocks for management functions. A spare/swap area in DRAM reduces flash wear. Reference voltages are adjusted when error correction fails.

Abstract translation: 超级增强型耐力设备（SEED）或固态硬盘（SSD）的控制器使用DRAM缓冲区增加闪存耐久性。 主机对闪存的访问由控制器拦截，并使用从元数据表读取的地址范围和文件扩展名将其分类为分页文件，临时文件，元数据和用户数据文件的数据类型。 分页文件和临时文件可选地写入闪存。 全页和部分页数据通过下层闪存设备（如eMMC，UFS或iSSD）存储之前的数据类型在DRAM中分组成多页元页面。 用于存储每种数据类型的DRAM缓冲器中的缓存被控制器管理并刷新到闪存设备。 存储用于管理功能的页面或块的写入日期。 DRAM中的备用/交换区域可减少闪存磨损。 当纠错失败时，调整参考电压。

公开(公告)号：US20160054942A1

公开(公告)日：2016-02-25

申请号：US14930801

申请日：2015-11-03

Applicant: Super Talent Technology, Corp.

Inventor： Frank Yu ,  Abraham C. Ma ,  Shimon Chen ,  Yi Syu Yan

IPC: G06F3/06 ,  G11C29/52 ,  G11C29/08 ,  G06F11/10

CPC classification number: G06F3/0619 ,  G06F1/30 ,  G06F3/0632 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F9/4418 ,  G06F11/00 ,  G06F11/1068 ,  G11C29/08 ,  G11C29/52

Abstract: A Green NAND Device (GND) driver application queries AC line and battery status and then stores an image of processor states and caches and a resume routine to DRAM when power failure occurs. A DRAM image is then stored to flash memory for a persistent mode when battery power is available. The image in DRAM may be a partial image that includes entries, flushed caches, processor contexts, ramdisks, write caches, and a resume context. Endurance of flash memory is increased by a Super Enhanced Endurance Device (SEED) SSD. In a power down mode, the GND driver limits DRAM use and only caches in DRAM data that can be deleted on power down. Host accesses to flash are intercepted by the GND driver and categorized by data type. Paging files and temporary files cached in DRAM are optionally written to flash.

Abstract translation: 绿色NAND器件（GND）驱动器应用程序查询交流线路和电池状态，然后在发生电源故障时将处理器状态和高速缓存的图像以及恢复例程存储到DRAM。 然后当电池电量可用时，DRAM图像被存储到闪存，用于持续模式。 DRAM中的图像可以是包括条目，刷新的高速缓存，处理器上下文，ramdisk，写高速缓存和恢复上下文的部分映像。 闪存的耐久性由超级增强型耐力设备（SEED）SSD增加。 在掉电模式下，GND驱动器限制DRAM使用，并且只能在掉电时可以删除的DRAM数据中缓存。 主机对闪存的访问由GND驱动程序拦截并按数据类型进行分类。 在DRAM中缓存的寻呼文件和临时文件可选地写入闪存。

公开(公告)号：US09123422B2

公开(公告)日：2015-09-01

申请号：US13788989

申请日：2013-03-07

Applicant: Super Talent Technology, Corp.

Inventor： Frank Yu ,  Abraham C. Ma ,  Shimon Chen ,  Yao-Tse Chang

IPC: G06F12/00 ,  G06F13/00 ,  G06F13/28 ,  G11C16/10 ,  G06F12/02 ,  G11C13/00 ,  G11C29/00

CPC classification number: G11C16/10 ,  G06F12/0246 ,  G06F2212/7203 ,  G06F2212/7208 ,  G11C13/0004 ,  G11C29/765 ,  G11C2211/5641

Abstract: An retention flash controller reads assigned-level bits from a bad block/erase count table or from a page status table that indicate when flash memory cells operate as Triple-Level-Cell (TLC), Multi-Level-Cell (MLC), or Single-Level-Cell (SLC). Pages that fail as TLC or MLC are downgraded for use as SLC pages by changing the assigned-level bits. The level bits adjust truth tables used by translation logic that receives inputs from voltage comparators reading a bit line. The range of voltages for each logic level may be adjusted by the truth tables or by programmable registers. The programming voltage or programming pulses may be adjusted to increase endurance and the number of permitted program-erase cycles while reducing retention times before a refresh is needed of the flash cells. Mixed configurations of flash memory have MLC blocks and MLC as SLC blocks, or other combinations.

Abstract translation: 保留闪存控制器从坏块/擦除计数表或从指示闪存单元作为三级单元（TLC），多级单元（MLC）或者多级别单元（MLC））操作的页状态表读取分配级位 单级单元（SLC）。 通过更改分配的级别位，降级为TLC或MLC的页面被降级以用作SLC页面。 电平位调整由接收来自读取位线的电压比较器的输入的转换逻辑使用的真值表。 每个逻辑电平的电压范围可以通过真值表或可编程寄存器进行调整。 可以调节编程电压或编程脉冲，以增加持续性和允许的编程擦除周期的数量，同时在闪存单元需要刷新之前减少保留时间。 闪存的混合配置具有MLC块和MLC作为SLC块或其他组合。

公开(公告)号：US20130145085A1

公开(公告)日：2013-06-06

申请号：US13730797

申请日：2012-12-28

Applicant: Super Talent Technology Corp.

Inventor： Frank Yu ,  Abraham C. Ma ,  Shimon Chen ,  Yi Syu Yan

IPC: G06F12/02

CPC classification number: G06F12/0246 ,  G06F3/0616 ,  G06F3/0644 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0804 ,  G06F12/0871 ,  G06F2212/401 ,  G06F2212/402 ,  G06F2212/7203 ,  G06F2212/7208 ,  G11C13/0004 ,  G11C16/349 ,  G11C29/765

Abstract: A Virtual-Memory Device (VMD) driver and application execute on a host to increase endurance of flash memory attached to a Super Enhanced Endurance Device (SEED) or Solid-State Drive (SSD). Host accesses to flash are intercepted by the VMD driver using upper and lower-level filter drivers and categorized as data types of paging files, temporary files, meta-data, and user data files, using address ranges and file extensions read from meta-data tables. Paging files and temporary files are optionally written to flash. Full-page and partial-page data are grouped into multi-page meta-pages by data type before storage by the SSD. ramdisks and caches for storing each data type in the host DRAM are managed and flushed to the SSD by the VMD driver. Write dates are stored for pages or blocks for management functions. A spare/swap area in DRAM reduces flash wear. Reference voltages are adjusted when error correction fails.

Abstract translation: 虚拟内存设备（VMD）驱动程序和应用程序在主机上执行，以增加连接到超级增强型持久性设备（SEED）或固态驱动器（SSD）的闪存的持久性。 VMD驱动程序使用上下级过滤器驱动程序拦截主机对Flash的访问，并使用从元数据读取的地址范围和文件扩展名将其分类为分页文件，临时文件，元数据和用户数据文件的数据类型 表。 分页文件和临时文件可选地写入闪存。 通过SSD存储之前的数据类型将全页和部分页数据分组为多页元页。 用于存储主机DRAM中的每种数据类型的RAM盘和缓存由VMD驱动器管理并刷新到SSD。 存储用于管理功能的页面或块的写入日期。 DRAM中的备用/交换区域可减少闪存磨损。 当纠错失败时，调整参考电压。