公开(公告)号：US09548108B2

公开(公告)日：2017-01-17

申请号：US14575943

申请日：2014-12-18

Applicant: Super Talent Technology Corp.

Inventor： Frank Yu ,  Abraham C. Ma ,  Shimon Chen ,  Yi Syu Yan

IPC: G06F12/00 ,  G06F13/00 ,  G06F13/28 ,  G11C11/56 ,  G06F12/02 ,  G11C13/00 ,  G11C16/34 ,  G11C29/00

CPC classification number: G11C11/5678 ,  G06F12/0246 ,  G06F2212/7203 ,  G06F2212/7208 ,  G06F2212/7211 ,  G11C13/0004 ,  G11C16/3431 ,  G11C29/765

Abstract: A Virtual-Memory Device (VMD) driver and application execute on a host to increase endurance of flash memory attached to a Super Enhanced Endurance Device (SEED) or Solid-State Drive (SSD). Host accesses to flash are intercepted by the VMD driver using upper and lower-level filter drivers and categorized as data types of paging files, temporary files, meta-data, and user data files, using address ranges and file extensions read from meta-data tables. Paging files and temporary files are optionally written to flash. Full-page and partial-page data are grouped into multi-page meta-pages by data type before storage by the SSD. Ramdisks and caches for storing each data type in the host DRAM are managed and flushed to the SSD by the VMD driver. Write dates are stored for pages or blocks for management functions. A spare/swap area in DRAM reduces flash wear. Reference voltages are adjusted when error correction fails.

Abstract translation: 虚拟内存设备（VMD）驱动程序和应用程序在主机上执行，以增加连接到超级增强型持久性设备（SEED）或固态驱动器（SSD）的闪存的持久性。 VMD驱动程序使用上下级过滤器驱动程序拦截主机对Flash的访问，并使用从元数据读取的地址范围和文件扩展名将其分类为分页文件，临时文件，元数据和用户数据文件的数据类型 表。 分页文件和临时文件可选地写入闪存。 通过SSD存储之前的数据类型将全页和部分页数据分组为多页元页。 用于存储主机DRAM中的每种数据类型的Ramdisks和缓存被VMD驱动程序管理并刷新到SSD。 存储用于管理功能的页面或块的写入日期。 DRAM中的备用/交换区域可减少闪存磨损。 当纠错失败时，调整参考电压。

公开(公告)号：US20140281151A1

公开(公告)日：2014-09-18

申请号：US13927435

申请日：2013-06-26

Applicant: Super Talent Technology, Corp.

Inventor： Frank Yu ,  Abraham C. Ma ,  Shimon Chen ,  Yi Syu Yan

IPC: G06F12/02

CPC classification number: G06F3/0619 ,  G06F1/30 ,  G06F3/0632 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F9/4418 ,  G06F11/00 ,  G06F11/1068 ,  G11C29/08 ,  G11C29/52

Abstract: A Green NAND Device (GND) driver application queries AC line and battery status and then stores an image of processor states and caches and a resume routine to DRAM when power failure occurs. A DRAM image is then stored to flash memory for a persistent mode when battery power is available. The image in DRAM may be a partial image that includes entries, flushed caches, processor contexts, ramdisks, write caches, and a resume context. Endurance of flash memory is increased by a Super Enhanced Endurance Device (SEED) SSD. In a power down mode, the GND driver limits DRAM use and only caches in DRAM data that can be deleted on power down. Host accesses to flash are intercepted by the GND driver and categorized by data type. Paging files and temporary files cached in DRAM are optionally written to flash.

Abstract translation: 绿色NAND器件（GND）驱动器应用程序查询交流线路和电池状态，然后在发生电源故障时将处理器状态和高速缓存的图像以及恢复例程存储到DRAM。 然后当电池电量可用时，DRAM图像被存储到闪存，用于持续模式。 DRAM中的图像可以是包括条目，刷新的高速缓存，处理器上下文，ramdisk，写高速缓存和恢复上下文的部分映像。 闪存的耐久性由超级增强型耐力设备（SEED）SSD增加。 在掉电模式下，GND驱动器限制DRAM使用，并且只能在掉电时可以删除的DRAM数据中缓存。 主机对闪存的访问由GND驱动程序拦截并按数据类型进行分类。 在DRAM中缓存的寻呼文件和临时文件可选地写入闪存。

公开(公告)号：US09489258B2

公开(公告)日：2016-11-08

申请号：US15145383

申请日：2016-05-03

Applicant: Super Talent Technology Corp.

Inventor： Frank Yu ,  Abraham C. Ma ,  Shimon Chen ,  Yao-Tse Chang ,  Yan Zhou

IPC: G11C29/00 ,  G06F11/10 ,  G06F17/30 ,  G06F12/08 ,  G06F12/10 ,  G06F12/02 ,  G06F12/14

CPC classification number: G06F11/1072 ,  G06F11/1016 ,  G06F11/1044 ,  G06F12/0246 ,  G06F12/0804 ,  G06F12/1009 ,  G06F12/1408 ,  G06F17/30132 ,  G06F2212/1036 ,  G06F2212/2022 ,  G06F2212/60 ,  G11C14/0018 ,  G11C29/52 ,  H03M13/1102 ,  H03M13/1515 ,  H03M13/152 ,  H03M13/19 ,  H03M13/353 ,  H03M13/356

Abstract: A GNSD Driver coupled to host DRAM, and having a memory manager, a data grouper engine, a data ungrouper engine, a power manager, and a flush/resume manager. The GNSD driver is coupled to a GNSD application, and the host DRAM to a Non-Volatile Memory Device. The GNSD Driver further includes a compression/decompression engine, a de-duplication engine, an encryption/decryption engine, or a high-level error correction code engine. The encryption/decryption engine encrypts according to DES or AES. A method of operating a GNSD Driver and a GNSD application coupled to DRAM of a host, includes coupling: Configuration and Register O/S Settings to the host and the GNSD Application; a data grouper and data ungrouper to the host DRAM and to Upper and a Lower Filter; a power manager and a memory manager to the host; a flush/resume manager to the DRAM; and the DRAM to an SEED SSD.

Abstract translation: 连接到主机DRAM的GNSD驱动器，并具有存储器管理器，数据分组器引擎，数据非分组引擎，电源管理器和刷新/恢复管理器。 GNSD驱动程序与GNSD应用程序相连，主机DRAM耦合到非易失性存储器设备。 GNSD驱动程序还包括压缩/解压缩引擎，重复数据删除引擎，加密/解密引擎或高级错误纠正码引擎。 加密/解密引擎根据DES或AES进行加密。 操作与主机的DRAM耦合的GNSD驱动程序和GNSD应用程序的方法包括：将主机和GNSD应用程序的配置和注册O / S设置进行耦合; 数据分组器和数据未分组到主机DRAM和上和下滤波器; 电源管理器和内存管理器; DRAM的刷新/恢复管理器; 和DRAM到SEED SSD。

公开(公告)号：US08954654B2

公开(公告)日：2015-02-10

申请号：US13730797

申请日：2012-12-28

Applicant: Super Talent Technology Corp.

Inventor： Frank Yu ,  Abraham C. Ma ,  Shimon Chen ,  Yi Syu Yan

IPC: G06F12/00 ,  G06F13/00 ,  G06F13/28 ,  G06F12/02 ,  G06F3/06 ,  G06F12/08 ,  G11C13/00 ,  G11C29/00

CPC classification number: G06F12/0246 ,  G06F3/0616 ,  G06F3/0644 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0804 ,  G06F12/0871 ,  G06F2212/401 ,  G06F2212/402 ,  G06F2212/7203 ,  G06F2212/7208 ,  G11C13/0004 ,  G11C16/349 ,  G11C29/765

Abstract: A Virtual-Memory Device (VMD) driver and application execute on a host to increase endurance of flash memory attached to a Super Enhanced Endurance Device (SEED) or Solid-State Drive (SSD). Host accesses to flash are intercepted by the VMD driver using upper and lower-level filter drivers and categorized as data types of paging files, temporary files, meta-data, and user data files, using address ranges and file extensions read from meta-data tables. Paging files and temporary files are optionally written to flash. Full-page and partial-page data are grouped into multi-page meta-pages by data type before storage by the SSD. ramdisks and caches for storing each data type in the host DRAM are managed and flushed to the SSD by the VMD driver. Write dates are stored for pages or blocks for management functions. A spare/swap area in DRAM reduces flash wear. Reference voltages are adjusted when error correction fails.

Abstract translation: 虚拟内存设备（VMD）驱动程序和应用程序在主机上执行，以增加连接到超级增强型持久性设备（SEED）或固态驱动器（SSD）的闪存的持久性。 VMD驱动程序使用上下级过滤器驱动程序拦截主机对Flash的访问，并使用从元数据读取的地址范围和文件扩展名将其分类为分页文件，临时文件，元数据和用户数据文件的数据类型 表。 分页文件和临时文件可选地写入闪存。 通过SSD存储之前的数据类型将全页和部分页数据分组为多页元页。 用于存储主机DRAM中的每种数据类型的RAM盘和缓存由VMD驱动器管理并刷新到SSD。 存储用于管理功能的页面或块的写入日期。 DRAM中的备用/交换区域可减少闪存磨损。 当纠错失败时，调整参考电压。

公开(公告)号：US20160070474A1

公开(公告)日：2016-03-10

申请号：US14935996

申请日：2015-11-09

Applicant: Super Talent Technology Corp.

Inventor： Frank Yu ,  Abraham C. Ma ,  Shimon Chen

IPC: G06F3/06 ,  G06F13/42

CPC classification number: G06F3/064 ,  G06F3/0604 ,  G06F3/0608 ,  G06F3/0631 ,  G06F3/0643 ,  G06F3/0647 ,  G06F3/0685 ,  G06F3/0688 ,  G06F12/0246 ,  G06F12/1408 ,  G06F13/4282 ,  G06F2212/401 ,  G06F2212/7203 ,  G06F2212/7208 ,  G06F2212/7211 ,  G11C11/5678 ,  G11C13/0004 ,  G11C16/349 ,  G11C29/765

Abstract: A Green NAND SSD Driver (GNSD) driver executes on a host to increase data-retention of flash memory attached to a Super Enhanced Endurance Device (SEED) or Solid-State Drive (SSD). Host accesses to flash are intercepted by the GNSD driver using upper and lower-level filter drivers. A retention-check timer causes a retention routine to be periodically executed. The routine sends high-level commands to the SEED that causes the SEED to refresh either all data or just data blocks with older write dates. Data is refreshed by moving to a new physical block. The retention routine can track write dates of logical blocks and command a SSD to move logical blocks with older write dates. A retention card has a controller that performs the retention routine when not connected to a host, while a SEED power card allows the SEED to refresh data when no host is attached to the SEED.

Abstract translation: 绿色NAND SSD驱动程序（GNSD）驱动程序在主机上执行，以增加连接到超级增强型持久性设备（SEED）或固态驱动器（SSD）的闪存的数据保留。 使用上级和下级过滤器驱动程序的GNSD驱动程序拦截了对闪存的主机访问。 保留检查计时器使得定期执行保留例程。 该例程向SEED发送高级命令，使得SEED可以刷新所有数据，或仅使用较旧的写入日期的数据块。 通过移动到新的物理块来刷新数据。 保留例程可以跟踪逻辑块的写入日期，并命令SSD以较旧的写入日期移动逻辑块。 保留卡具有控制器，当未连接到主机时，执行保留程序，而SEED电源卡允许SEED在没有主机连接到SEED时刷新数据。

公开(公告)号：US20150173210A1

公开(公告)日：2015-06-18

申请号：US14634269

申请日：2015-02-27

Applicant: Super Talent Technology, Corp.

Inventor： Jim Chin-Nan Ni ,  Nan Nan ,  Abraham C. Ma

IPC: H05K3/34 ,  H05K3/40

CPC classification number: H05K3/3484 ,  G06F1/1632 ,  H01L23/3121 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L2223/5442 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01R12/57 ,  H01R12/71 ,  H05K1/117 ,  H05K3/0052 ,  H05K3/284 ,  H05K3/326 ,  H05K3/361 ,  H05K3/4007 ,  H05K3/4046 ,  H05K5/0278 ,  H05K2201/0311 ,  H05K2201/09472 ,  H05K2203/1316 ,  Y10T29/49128 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2924/00

Abstract: A dual-personality extended USB (EUSB) system supports both USB and EUSB devices using an extended 9-pin EUSB socket. Each EUSB device includes a PCBA having four standard USB metal contact pads, and several extended purpose contact springs disposed on an upper side of a PCB. A single-shot molding process is used to form a molded housing over passive components and IC dies disposed on the lower PCB surface. The passive components are mounted using SMT methods, and the IC dies are mounted using COB methods. The extended 9-pin EUSB socket includes standard USB contacts and extended use contacts that communicate with the PCBA through the standard USB metal contacts and the contact springs. The EUSB device is optionally used as a modular insert that is mounted onto a metal or plastic case to provide a EUSB assembly having a plug shell similar to a standard USB male connector.

Abstract translation: 双重个性扩展USB（EUSB）系统使用扩展的9针EUSB插座支持USB和EUSB设备。 每个EUSB设备包括具有四个标准USB金属接触焊盘的PCBA和设置在PCB上侧的多个扩展用途接触弹簧。 单次注射成型工艺用于在被动元件和设置在下PCB表面上的IC管芯之间形成模制外壳。 使用SMT方法安装无源部件，并使用COB方法安装IC管芯。 扩展的9针EUSB插座包括通过标准USB金属触点和接触弹簧与PCBA通信的标准USB触点和扩展使用触点。 EUSB设备可选地用作安装在金属或塑料外壳上的模块化插件，以提供具有类似于标准USB公连接器的插头外壳的EUSB组件。

公开(公告)号：US20150106557A1

公开(公告)日：2015-04-16

申请号：US14575943

申请日：2014-12-18

Applicant: Super Talent Technology Corp.

Inventor： Frank Yu ,  Abraham C. Ma ,  Shimon Chen ,  Yi Syu Yan

IPC: G06F3/06 ,  G11C13/00 ,  G11C11/56 ,  G06F12/02

CPC classification number: G11C11/5678 ,  G06F12/0246 ,  G06F2212/7203 ,  G06F2212/7208 ,  G06F2212/7211 ,  G11C13/0004 ,  G11C16/3431 ,  G11C29/765

Abstract: A Virtual-Memory Device (VMD) driver and application execute on a host to increase endurance of flash memory attached to a Super Enhanced Endurance Device (SEED) or Solid-State Drive (SSD). Host accesses to flash are intercepted by the VMD driver using upper and lower-level filter drivers and categorized as data types of paging files, temporary files, meta-data, and user data files, using address ranges and file extensions read from meta-data tables. Paging files and temporary files are optionally written to flash. Full-page and partial-page data are grouped into multi-page meta-pages by data type before storage by the SSD. Ramdisks and caches for storing each data type in the host DRAM are managed and flushed to the SSD by the VMD driver. Write dates are stored for pages or blocks for management functions. A spare/swap area in DRAM reduces flash wear. Reference voltages are adjusted when error correction fails.

Abstract translation: 虚拟内存设备（VMD）驱动程序和应用程序在主机上执行，以增加连接到超级增强型持久性设备（SEED）或固态驱动器（SSD）的闪存的持久性。 VMD驱动程序使用上下级过滤器驱动程序拦截主机对Flash的访问，并使用从元数据读取的地址范围和文件扩展名将其分类为分页文件，临时文件，元数据和用户数据文件的数据类型 表。 分页文件和临时文件可选地写入闪存。 通过SSD存储之前的数据类型将全页和部分页数据分组为多页元页。 用于存储主机DRAM中的每种数据类型的Ramdisks和缓存被VMD驱动程序管理并刷新到SSD。 存储用于管理功能的页面或块的写入日期。 DRAM中的备用/交换区域可减少闪存磨损。 当纠错失败时，调整参考电压。

公开(公告)号：US20140006688A1

公开(公告)日：2014-01-02

申请号：US13788989

申请日：2013-03-07

Applicant: SUPER TALENT TECHNOLOGY, CORP.

Inventor： Frank Yu ,  Abraham C. Ma ,  Shimon Chen ,  Yao-Tse Chang

IPC: G11C16/10 ,  G06F12/02

CPC classification number: G11C16/10 ,  G06F12/0246 ,  G06F2212/7203 ,  G06F2212/7208 ,  G11C13/0004 ,  G11C29/765 ,  G11C2211/5641

Abstract: An retention flash controller reads assigned-level bits from a bad block/erase count table or from a page status table that indicate when flash memory cells operate as Triple-Level-Cell (TLC), Multi-Level-Cell (MLC), or Single-Level-Cell (SLC). Pages that fail as TLC or MLC are downgraded for use as SLC pages by changing the assigned-level bits. The level bits adjust truth tables used by translation logic that receives inputs from voltage comparators reading a bit line. The range of voltages for each logic level may be adjusted by the truth tables or by programmable registers. The programming voltage or programming pulses may be adjusted to increase endurance and the number of permitted program-erase cycles while reducing retention times before a refresh is needed of the flash cells. Mixed configurations of flash memory have MLC blocks and MLC as SLC blocks, or other combinations.

Abstract translation: 保留闪存控制器从坏块/擦除计数表或从指示闪存单元作为三级单元（TLC），多级单元（MLC）或者多级别单元（MLC））操作的页状态表读取分配级位 单级单元（SLC）。 通过更改分配的级别位，降级为TLC或MLC的页面被降级以用作SLC页面。 电平位调整由接收来自读取位线的电压比较器的输入的转换逻辑使用的真值表。 每个逻辑电平的电压范围可以通过真值表或可编程寄存器进行调整。 可以调节编程电压或编程脉冲，以增加持续性和允许的编程擦除周期的数量，同时在闪存单元需要刷新之前减少保留时间。 闪存的混合配置具有MLC块和MLC作为SLC块或其他组合。

公开(公告)号：US09720616B2

公开(公告)日：2017-08-01

申请号：US14935996

申请日：2015-11-09

Applicant: Super Talent Technology Corp.

Inventor： Frank Yu ,  Abraham C. Ma ,  Shimon Chen

IPC: G06F12/00 ,  G06F13/00 ,  G06F13/28 ,  G06F3/06 ,  G06F13/42 ,  G06F12/02 ,  G11C11/56 ,  G11C13/00 ,  G11C29/00 ,  G11C16/34 ,  G06F12/14

CPC classification number: G06F3/064 ,  G06F3/0604 ,  G06F3/0608 ,  G06F3/0631 ,  G06F3/0643 ,  G06F3/0647 ,  G06F3/0685 ,  G06F3/0688 ,  G06F12/0246 ,  G06F12/1408 ,  G06F13/4282 ,  G06F2212/401 ,  G06F2212/7203 ,  G06F2212/7208 ,  G06F2212/7211 ,  G11C11/5678 ,  G11C13/0004 ,  G11C16/349 ,  G11C29/765

Abstract: A Green NAND SSD Driver (GNSD) driver executes on a host to increase data-retention of flash memory attached to a Super Enhanced Endurance Device (SEED) or Solid-State Drive (SSD). Host accesses to flash are intercepted by the GNSD driver using upper and lower-level filter drivers. A retention-check timer causes a retention routine to be periodically executed. The routine sends high-level commands to the SEED that causes the SEED to refresh either all data or just data blocks with older write dates. Data is refreshed by moving to a new physical block. The retention routine can track write dates of logical blocks and command a SSD to move logical blocks with older write dates. A retention card has a controller that performs the retention routine when not connected to a host, while a SEED power card allows the SEED to refresh data when no host is attached to the SEED.

公开(公告)号：US09547589B2

公开(公告)日：2017-01-17

申请号：US14575872

申请日：2014-12-18

Applicant: Super Talent Technology Corp.

Inventor： Frank Yu ,  Abraham C. Ma ,  Shimon Chen

IPC: G06F12/00 ,  G06F13/00 ,  G06F13/28 ,  G06F12/02 ,  G11C16/34 ,  G06F13/16 ,  G06F3/06 ,  G11C29/00 ,  G06F12/08

CPC classification number: G06F12/0246 ,  G06F3/0616 ,  G06F3/0656 ,  G06F3/0679 ,  G06F12/08 ,  G06F13/1694 ,  G06F2212/7203 ,  G06F2212/7208 ,  G06F2212/7211 ,  G11C16/349 ,  G11C29/765

Abstract: A flash drive has increased endurance and longevity by reducing writes to flash. An Endurance Translation Layer (ETL) is created in a DRAM buffer and provides temporary storage to reduce flash wear. A Smart Storage Switch (SSS) controller assigns data-type bits when categorizing host accesses as paging files used by memory management, temporary files, File Allocation Table (FAT) and File Descriptor Block (FDB) entries, and user data files, using address ranges and file extensions read from FAT. Paging files and temporary files are never written to flash. Partial-page data is packed and sector mapped by sub-sector mapping tables that are pointed to by a unified mapping table that stores the data-type bits and pointers to data or tables in DRAM. Partial sectors are packed together to reduce DRAM usage and flash wear. A spare/swap area in DRAM reduces flash wear. Reference voltages are adjusted when error correction fails.

Abstract translation: 闪存驱动器通过减少对闪存的写入来提高耐用性和使用寿命。 耐久性翻译层（ETL）在DRAM缓冲区中创建，并提供临时存储以减少闪存磨损。 智能存储交换机（SSS）控制器将主机访问分类为内存管理，临时文件，文件分配表（FAT）和文件描述符块（FDB）条目所使用的页面文件以及用户数据文件时，分配数据类型位，使用地址 从FAT读取的范围和文件扩展名。 分页文件和临时文件不会写入闪存。 部分页面数据由通过统一映射表指向的子扇区映射表进行打包和扇区映射，统一映射表将数据类型位和指针存储到DRAM中的数据或表。 部分行业包装在一起，以减少DRAM的使用和闪存磨损。 DRAM中的备用/交换区域可减少闪存磨损。 当纠错失败时，调整参考电压。