公开(公告)号：US20240385522A1

公开(公告)日：2024-11-21

申请号：US18610099

申请日：2024-03-19

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Taeksoo KWAK ,  Si-Kyun PARK ,  Hyungrang MOON ,  Jongpil HO ,  Gyeonghun PARK ,  Myoungsoo SONG ,  Jin-Hee BAE ,  Minsoo KIM ,  Seung HAN ,  Taeho KIM ,  Gyeong Ryeong BAK

IPC: G03F7/11 ,  C07F7/22 ,  G03F7/004 ,  H01L21/027

Abstract: A composition for removing edge beads from metal-containing resists, and a method of forming patterns including a step of removing edge beads using the composition are provided. The composition for removing edge beads includes an additive including at least one selected from among phosphoric acid, a phosphorous acid-based compound, and a hypophosphorous acid-based compound, and a carboxylic acid-based compound, and an organic solvent, where a mixed weight ratio of the at least one selected from among the phosphoric acid, the phosphorous acid-based compound, and the hypophosphorous acid-based compound to the carboxylic acid-based compound is about 9:1 to about 1.2:1.

公开(公告)号：US20240019784A1

公开(公告)日：2024-01-18

申请号：US18321596

申请日：2023-05-22

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Ryunmin HEO ,  Jin-Hee BAE ,  Hyungrang MOON ,  Taeksoo KWAK ,  Gyeong Ryeong BAK ,  Chungheon LEE ,  Byeonggyu HWANG

IPC: G03F7/32 ,  G03F7/004

CPC classification number: G03F7/325 ,  G03F7/0042

Abstract: A metal-containing photoresist developer composition includes an organic solvent, and at least one additive selected from a phosphorous acid-based compound, a hypophosphorous acid-based compound, a sulfurous acid-based compound, and a hydroxamic acid-based compound, wherein the additive is included in an amount of about 0.0001 wt % to less than about 1.0 wt %. A method of forming patterns includes step of developing a metal-containing photoresist film using the metal-containing photoresist developer composition.

公开(公告)号：US20180163055A1

公开(公告)日：2018-06-14

申请号：US15656341

申请日：2017-07-21

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Sooyeon SIM ,  Jin-Hee BAE ,  TaekSoo KWAK ,  Yonggoog KIM ,  Jingyo KIM ,  Kunbae NOH ,  Huichan YUN ,  Jiho LEE ,  Byeong Gyu HWANG

IPC: C09D1/00 ,  C09D7/00 ,  C09D7/12 ,  C01B33/12 ,  H01L21/02

CPC classification number: C09D1/00 ,  C01B33/12 ,  C09D7/20 ,  C09D7/63 ,  H01L21/02164 ,  H01L21/02282 ,  H01L21/02318

Abstract: A composition for forming silica layer includes a silicon-containing polymer and a solvent, wherein a weight average molecular weight of the silicon-containing polymer ranges from about 2,000 to about 100,000 and a branching ratio (a) of the silicon-containing polymer calculated by Equation 1 ranges from about 0.25 to about 0.50. η=k·Ma  [Equation 1] In Equation 1, η is an intrinsic viscosity of a silicon-containing polymer, M is an absolute molecular weight of a silicon-containing polymer, a is a branching ratio, and k is an intrinsic constant.

公开(公告)号：US20150337168A1

公开(公告)日：2015-11-26

申请号：US14561996

申请日：2014-12-05

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Jin-Hee BAE ,  Taek-Soo KWAK ,  Han-Song LEE ,  Youn-Jin CHO ,  Byeong-Gyu HWANG ,  Bo-Sun KIM ,  Sae-Mi PARK ,  Eun-Su PARK ,  Jin-Woo SEO ,  Wan-Hee LIM ,  Jun-Young JANG ,  Kwen-Woo HAN

IPC: C09D183/04 ,  B05D1/00 ,  B05D3/00 ,  C09D183/16

CPC classification number: C09D183/04 ,  C08G77/12 ,  C08G77/26 ,  C08G77/54 ,  C08G77/60 ,  C09D183/02 ,  C09D183/16 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1275 ,  C23C18/1283 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02326 ,  H01L21/02337 ,  H01L28/90

Abstract: A composition for forming a silica based layer and a method for manufacturing a silica based layer, the composition including a silicon-containing compound, the silicon-containing compound including a hydrogenated polysilazane moiety, a hydrogenated polysiloxazane moiety, or a combination thereof, and a solvent, wherein a number of particles of the silicon-containing compound in the composition and having a particle diameter of about 0.2 μm to about 1 μm is less than or equal to about 10/ml.

Abstract translation: 用于形成二氧化硅基层的组合物和二氧化硅基层的制造方法，该组合物包含含硅化合物，含有氢化聚硅氮烷部分的含硅化合物，氢化聚硅氧烷部分或其组合，以及 溶剂，其中所述组合物中的多个含硅化合物的颗粒的粒径为约0.2μm至约1μm，小于或等于约10 / ml。

公开(公告)号：US20150093545A1

公开(公告)日：2015-04-02

申请号：US14488440

申请日：2014-09-17

Applicant: Samsung SDI Co., Ltd.

Inventor： Kwen-Woo HAN ,  Taek-Soo KWAK ,  Bo-Sun KIM ,  Eun-Su PARK ,  Jin-Hee BAE ,  Jin-Woo SEO ,  Han-Song LEE ,  Wan-Hee LIM ,  Byeong-Gyu HWANG ,  Sang-Kyun KIM ,  Youn-Jin CHO

IPC: C09D183/16 ,  C01B33/12 ,  B05D3/02

CPC classification number: C09D183/16 ,  B05D3/0254 ,  B05D2518/10 ,  C01B33/126 ,  C08G77/54 ,  C08G77/62 ,  C09D183/14 ,  Y10T428/24479

Abstract: A composition for a silica based layer, a silica based layer, and a method of manufacturing a silica based layer, the composition including a solvent; and a silicon-containing polymer, the silicon-containing polymer having a weight average molecular weight of about 20,000 to about 160,000.

Abstract translation: 一种二氧化硅基层组合物，二氧化硅基层和二氧化硅基层的制造方法，该组合物含有溶剂; 和含硅聚合物，所述含硅聚合物的重均分子量为约20,000至约160,000。