公开(公告)号：US20060180882A1

公开(公告)日：2006-08-17

申请号：US11353041

申请日：2006-02-14

Applicant: Akira Sato ,  Shogo Inaba

Inventor： Akira Sato ,  Shogo Inaba

IPC: H01L21/00 ,  H01L29/82

CPC classification number: B81C1/00587

Abstract: A MEMS device includes a wiring laminated through an interlayer insulating film on a semiconductor substrate, the interlayer insulating film partially opened up to an upper portion of the substrate, and a structure disposed in the opening, wherein on a sidewall of the interlayer insulating film exposed in the opening that faces the structure and on a surface of the uppermost layer of the interlayer insulating film, a silicon nitride film is formed.

Abstract translation: MEMS器件包括通过半导体衬底上的层间绝缘膜层叠的布线，部分地向基板的上部开放的层间绝缘膜和布置在开口中的结构，其中在层间绝缘膜的侧壁暴露 在面向结构的开口和层间绝缘膜的最上层的表面上形成氮化硅膜。

公开(公告)号：US08552512B2

公开(公告)日：2013-10-08

申请号：US12907337

申请日：2010-10-19

Applicant: Shogo Inaba ,  Akira Sato ,  Toru Watanabe ,  Takeshi Mori

Inventor： Shogo Inaba ,  Akira Sato ,  Toru Watanabe ,  Takeshi Mori

IPC: H01L29/84

CPC classification number: B81B3/0086

Abstract: A micro electro mechanical system (MEMS) device includes: a fixed electrode made of silicon and provided above a semiconductor substrate; a movable electrode made of silicon and arranged in a mechanically movable manner by having a gap from the semiconductor substrate; and a wiring layered part that is provided around the movable electrode, covers a portion of the fixed electrode and includes wiring. One of the fixed electrode and the movable electrode is implanted with an impurity ion and at least a part of the portion of the fixed electrode covered by the wiring layered part is silicidized.

Abstract translation: 微电子机械系统（MEMS）装置包括：由硅制成并设置在半导体衬底之上的固定电极; 由硅制成的可移动电极，通过与半导体衬底有间隙以机械可移动的方式布置; 以及设置在可动电极周围的布线层叠部，覆盖固定电极的一部分并且包括布线。 固定电极和可动电极之一注入杂质离子，被布线层叠部覆盖的固定电极的部分的至少一部分被硅化。

公开(公告)号：US08432232B2

公开(公告)日：2013-04-30

申请号：US13045960

申请日：2011-03-11

Applicant: Shogo Inaba

Inventor： Shogo Inaba

IPC: H03B5/30

CPC classification number: H03H9/1057 ,  H01L29/84 ,  H03H3/0072 ,  H03H9/2452 ,  H03H2240/00

Abstract: A MEMS device includes a substrate, a cavity formed above the substrate, a first vibrator contained in the cavity, and a second vibrator contained in the cavity and having a natural frequency different from that of the first vibrator. The first vibrator and the second vibrator are preferably arranged along a long side of the cavity having a rectangular shape in plan view.

Abstract translation: MEMS器件包括衬底，在衬底上形成的空腔，容纳在空腔中的第一振动器和容纳在腔中并具有与第一振动器的固有频率不同的固有频率的第二振动器。 第一振动器和第二振动器优选地在平面图中沿着具有矩形形状的空腔的长边布置。

公开(公告)号：US08129804B2

公开(公告)日：2012-03-06

申请号：US13168561

申请日：2011-06-24

Applicant: Shogo Inaba ,  Akira Sato

Inventor： Shogo Inaba ,  Akira Sato

IPC: H01L29/84

CPC classification number: B81B3/0075 ,  H01L24/05 ,  H01L2224/05554 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2924/00

Abstract: An electronic device includes a substrate, a functional structural body formed on the substrate and a covering structure for defining a cavity part having the functional structural body disposed therein, wherein the covering structure is provided with a side wall provided on the substrate and comprising an interlayer insulating layer surrounding the cavity part and a wiring layer; a first covering layer covering an upper portion of the cavity part and having an opening penetrating through the cavity part and composed of a laminated structure including a corrosion-resistant layer; and a second covering layer for closing the opening.

Abstract translation: 电子设备包括基板，形成在基板上的功能结构体和用于限定具有设置在其中的功能结构体的空腔部分的覆盖结构，其中覆盖结构设置有设置在基板上的侧壁， 围绕空腔部分的绝缘层和布线层; 覆盖所述空腔部的上部的第一覆盖层，具有穿过所述空腔部的开口，由包含耐腐蚀层的层叠结构构成的第一覆盖层; 以及用于封闭开口的第二覆盖层。

公开(公告)号：US08115266B2

公开(公告)日：2012-02-14

申请号：US13170628

申请日：2011-06-28

Applicant: Toru Watanabe ,  Akira Sato ,  Shogo Inaba ,  Takeshi Mori

Inventor： Toru Watanabe ,  Akira Sato ,  Shogo Inaba ,  Takeshi Mori

IPC: H01L27/14 ,  H01L29/82 ,  H01L29/84 ,  H01L23/48

CPC classification number: B81B3/0086 ,  B81B2201/0271

Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.

Abstract translation: 微机电系统（MEMS）器件包括半导体衬底，包括固定电极的MEMS和通过绝缘层形成在半导体衬底上的可移动电极，以及形成在固定电极下方的半导体衬底中的阱。 井是n型井和p型井之一。 p型阱对固定电极施加正电压，而n型阱对固定电极施加负电压。

公开(公告)号：US07989905B2

公开(公告)日：2011-08-02

申请号：US12981747

申请日：2010-12-30

Applicant: Toru Watanabe ,  Akira Sato ,  Shogo Inaba ,  Takeshi Mori

Inventor： Toru Watanabe ,  Akira Sato ,  Shogo Inaba ,  Takeshi Mori

IPC: H01L29/84 ,  H01L27/14 ,  H01L29/82 ,  H01L23/48

CPC classification number: B81B3/0086 ,  B81B2201/0271

Abstract: A microelectromechanical system (MEMS) device includes a semiconductor substrate, a MEMS including a fixed electrode and a movable electrode formed on the semiconductor substrate through an insulating layer, and a well formed in the semiconductor substrate below the fixed electrode. The well is one of an n-type well and a p-type well. The p-type well applies a positive voltage to the fixed electrode while the n-type well applies a negative voltage to the fixed electrode.

公开(公告)号：US07956709B2

公开(公告)日：2011-06-07

申请号：US11832038

申请日：2007-08-01

Applicant: Toru Watanabe ,  Akira Sato ,  Shogo Inaba ,  Takeshi Mori

Inventor： Toru Watanabe ,  Akira Sato ,  Shogo Inaba ,  Takeshi Mori

IPC: H01H51/22

CPC classification number: H01H59/0009 ,  H01C10/50 ,  Y10T29/49105

Abstract: A micro-electro mechanical system (MEMS) switch includes a fixed electrode formed on a substrate, and a movable electric resistor formed on the substrate, the movable electric resistor serving as an electric resistor that divides an electric potential where the MEMS switch is set to a conduction state.

Abstract translation: 微机电系统（MEMS）开关包括形成在基板上的固定电极和形成在基板上的可移动电阻器，可移动电阻器用作将MEMS开关设置为的电位分开的电阻器 导通状态。

公开(公告)号：US20110121908A1

公开(公告)日：2011-05-26

申请号：US13012099

申请日：2011-01-24

Applicant: Shogo Inaba ,  Akira Sato ,  Toru Watanabe ,  Takeshi Mori

Inventor： Shogo Inaba ,  Akira Sato ,  Toru Watanabe ,  Takeshi Mori

IPC: H03K3/36

CPC classification number: H03H3/0073 ,  H03H9/1057 ,  Y10S977/721

Abstract: A resonator with a microeletromechanical system structure has a transistor with a gate electrode, a capacitor with an upper and lower electrode, a substrate, a first and second structure of the microelectromechanical system structure, a first silicon layer of the first structure and the upper electrode formed above the substrate, a second silicon layer of the second structure and the gate electrode unit formed above the substrate, and an insulating film formed above the capacitor and the transistor, the insulating film having an opening for placement of the second structure.

Abstract translation: 具有微机电系统结构的谐振器具有具有栅电极的晶体管，具有上电极和下电极的电容器，基板，微机电系统结构的第一和第二结构，第一结构的第一硅层和上电极 形成在基板上方，第二结构的第二硅层和形成在基板上的栅电极单元，以及形成在电容器和晶体管上方的绝缘膜，绝缘膜具有用于放置第二结构的开口。

公开(公告)号：US07892875B2

公开(公告)日：2011-02-22

申请号：US12684336

申请日：2010-01-08

Applicant: Shogo Inaba ,  Akira Sato ,  Toru Watanabe ,  Takeshi Mori

Inventor： Shogo Inaba ,  Akira Sato ,  Toru Watanabe ,  Takeshi Mori

IPC: H01L21/00

CPC classification number: H03H3/0073 ,  H03H9/1057 ,  Y10S977/721

Abstract: A method is for manufacturing a microelectromechanical system resonator having a semiconductor device and a microelectromechanical system structure unit formed on a substrate. The method includes: forming a lower electrode of an oxide-nitride-oxide capacitor unit included in the semiconductor device using a first silicon layer; forming, using a second silicon layer, a substructure of the microelectromechanical system structure unit and an upper electrode of the oxide-nitride-oxide capacitor unit included in the semiconductor device; and forming, using a third silicon layer, a superstructure of the microelectromechanical system structure unit and a gate electrode of a complementary metal oxide semiconductor circuit unit included in the semiconductor device.

Abstract translation: 一种用于制造具有形成在基板上的半导体器件和微机电系统结构单元的微机电系统谐振器的方法。 该方法包括：使用第一硅层形成包括在半导体器件中的氧化物 - 氮化物 - 氧化物电容器单元的下电极; 使用第二硅层形成微机电系统结构单元的子结构和包括在半导体器件中的氧化物 - 氮化物 - 氧化物电容器单元的上电极; 以及使用第三硅层形成所述微机电系统结构单元的上部结构和包括在所述半导体器件中的互补金属氧化物半导体电路单元的栅电极。

公开(公告)号：US07709912B2

公开(公告)日：2010-05-04

申请号：US11875383

申请日：2007-10-19

Applicant: Akira Sato ,  Toru Watanabe ,  Shogo Inaba ,  Takeshi Mori

Inventor： Akira Sato ,  Toru Watanabe ,  Shogo Inaba ,  Takeshi Mori

IPC: H01L31/00

CPC classification number: B81C1/00246 ,  B81B2207/015 ,  B81B2207/07 ,  B81C2203/0136 ,  B81C2203/0714 ,  B81C2203/0735 ,  H01L21/7682 ,  H01L24/05 ,  H01L2924/14 ,  H01L2924/00

Abstract: An electronic device, including a substrate, a functional structure constituting a functional element formed on the substrate, and a cover structure forming a cavity portion in which the functional structure is disposed, is disclosed. In the electronic device, the cover structure includes a laminated structure of an interlayer insulating film and a wiring layer, the laminated structure being formed on the substrate in such a way that it surrounds the cavity portion, and the cover structure has an upside cover portion covering the cavity portion from above, the upside cover portion being formed with part of the wiring layer that is disposed above the functional structure.

Abstract translation: 公开了一种电子设备，包括基板，构成在基板上形成的功能元件的功能结构，以及形成其中设置有功能结构的空腔部分的盖结构。 在电子设备中，盖结构包括层间绝缘膜和布线层的叠层结构，层叠结构以包围空腔部分的方式形成在基板上，并且盖结构具有上侧盖部分 从上方覆盖空腔部分，上侧盖部分形成有设置在功能结构上方的布线层的一部分。