公开(公告)号：US10511273B2

公开(公告)日：2019-12-17

申请号：US15835230

申请日：2017-12-07

Applicant: Silicon Laboratories Inc.

Inventor： Mohammad Al-Shyoukh ,  Krishna Pentakota ,  Stefan N. Mastovich

IPC: H03F3/217 ,  H02J50/05 ,  H02J50/80 ,  H02M3/335 ,  H02M5/458 ,  H02M7/797 ,  H02M1/08 ,  H01L29/66 ,  H02M3/338 ,  H02M1/34 ,  H02H9/00 ,  H03F3/04 ,  H01L29/78 ,  H02M1/00 ,  H02M1/32

Abstract: A power transfer device includes an oscillator circuit having a first node, a second node, and a control terminal. The oscillator circuit includes a cascode circuit comprising transistors having a first conductivity type and a first breakdown voltage. The cascode circuit is coupled to the control terminal, the first node, and the second node. The oscillator circuit includes a latch circuit coupled between the cascode circuit and a first power supply node. The latch circuit includes cross-coupled transistors having the first conductivity type and a second breakdown voltage. The first breakdown voltage is greater than the second breakdown voltage. The oscillator circuit may be configured to develop a pseudo-differential signal on the first node and the second node. The pseudo-differential signal may have a peak voltage of at least three times a voltage level of an input DC signal on a second power supply node.

公开(公告)号：US20190181817A1

公开(公告)日：2019-06-13

申请号：US15835230

申请日：2017-12-07

Applicant: Silicon Laboratories Inc.

Inventor： Mohammad Al-Shyoukh ,  Krishna Pentakota ,  Stefan N. Mastovich

IPC: H03F3/217 ,  H02J50/05 ,  H02J50/80 ,  H02M3/335 ,  H02M5/458 ,  H02M7/797 ,  H01L29/66 ,  H02M1/08

CPC classification number: H03F3/217 ,  H01L29/66106 ,  H01L29/66143 ,  H01L29/7816 ,  H02H9/005 ,  H02J50/05 ,  H02J50/80 ,  H02M1/08 ,  H02M1/32 ,  H02M1/34 ,  H02M3/33515 ,  H02M3/33592 ,  H02M3/3387 ,  H02M5/458 ,  H02M7/797 ,  H02M2001/0003 ,  H03F3/04 ,  H03F3/2171

Abstract: A power transfer device includes an oscillator circuit having a first node, a second node, and a control terminal. The oscillator circuit includes a cascode circuit comprising transistors having a first conductivity type and a first breakdown voltage. The cascode circuit is coupled to the control terminal, the first node, and the second node. The oscillator circuit includes a latch circuit coupled between the cascode circuit and a first power supply node. The latch circuit includes cross-coupled transistors having the first conductivity type and a second breakdown voltage. The first breakdown voltage is greater than the second breakdown voltage. The oscillator circuit may be configured to develop a pseudo-differential signal on the first node and the second node. The pseudo-differential signal may have a peak voltage of at least three times a voltage level of an input DC signal on a second power supply node.

公开(公告)号：US10812028B2

公开(公告)日：2020-10-20

申请号：US16660027

申请日：2019-10-22

Applicant: Silicon Laboratories Inc.

Inventor： Mohammad Al-Shyoukh ,  Krishna Pentakota ,  Stefan N. Mastovich

IPC: H03F3/217 ,  H02J50/05 ,  H02J50/80 ,  H02M3/335 ,  H02M5/458 ,  H02M7/797 ,  H02M1/08 ,  H01L29/66 ,  H02M3/338 ,  H02M1/34 ,  H02H9/00 ,  H03F3/04 ,  H01L29/78 ,  H02M1/00 ,  H02M1/32

Abstract: A power transfer device includes an oscillator circuit having a first node, a second node, and a control terminal. The oscillator circuit includes a cascode circuit comprising transistors having a first conductivity type and a first breakdown voltage. The cascode circuit is coupled to the control terminal, the first node, and the second node. The oscillator circuit includes a latch circuit coupled between the cascode circuit and a first power supply node. The latch circuit includes cross-coupled transistors having the first conductivity type and a second breakdown voltage. The first breakdown voltage is greater than the second breakdown voltage. The oscillator circuit may be configured to develop a pseudo-differential signal on the first node and the second node. The pseudo-differential signal may have a peak voltage of at least three times a voltage level of an input DC signal on a second power supply node.

公开(公告)号：US20200052665A1

公开(公告)日：2020-02-13

申请号：US16660027

申请日：2019-10-22

Applicant: Silicon Laboratories Inc.

Inventor： Mohammad Al-Shyoukh ,  Krishna Pentakota ,  Stefan N. Mastovich

IPC: H03F3/217 ,  H01L29/66 ,  H02M1/08 ,  H02M7/797 ,  H02M5/458 ,  H02M3/335 ,  H02J50/80 ,  H02J50/05 ,  H02M3/338

Abstract: A power transfer device includes an oscillator circuit having a first node, a second node, and a control terminal. The oscillator circuit includes a cascode circuit comprising transistors having a first conductivity type and a first breakdown voltage. The cascode circuit is coupled to the control terminal, the first node, and the second node. The oscillator circuit includes a latch circuit coupled between the cascode circuit and a first power supply node. The latch circuit includes cross-coupled transistors having the first conductivity type and a second breakdown voltage. The first breakdown voltage is greater than the second breakdown voltage. The oscillator circuit may be configured to develop a pseudo-differential signal on the first node and the second node. The pseudo-differential signal may have a peak voltage of at least three times a voltage level of an input DC signal on a second power supply node.

公开(公告)号：US10397025B2

公开(公告)日：2019-08-27

申请号：US15683873

申请日：2017-08-23

Applicant: Silicon Laboratories Inc.

Inventor： Mohammad Al-Shyoukh ,  Stefan Mastovich

IPC: H04L25/02 ,  H03H7/01 ,  H03H7/06 ,  H03H11/04 ,  H03H11/38 ,  H04B1/10 ,  H04L25/08 ,  H04L27/06

Abstract: A technique for attenuating common mode transient events uses a differential receiver circuit including a band-stop filter having a stopband fSB around a notch frequency fn of a received signal. The differential receiver circuit includes a first high-pass filter coupled in series with the band-stop filter. The notch frequency fn is less than a carrier frequency fc of a signal received by the differential receiver circuit. The band-stop filter may include a buffer circuit and a notch filter coupled in series with the buffer circuit. The notch filter may have a second stopband around the notch frequency fn. The differential receiver circuit may have a propagation delay that is independent of a pulse width of common mode transient energy attenuated by the differential receiver circuit.