公开(公告)号：US5205051A

公开(公告)日：1993-04-27

申请号：US714864

申请日：1991-06-13

Applicant: Steven Hurwitt

Inventor： Steven Hurwitt

IPC: B01J3/02 ,  C23C14/56 ,  H01L21/00 ,  H01L21/677

CPC classification number: H01L21/67017 ,  C23C14/564 ,  H01L21/67739

Abstract: A pressure sealed chamber such as a load lock for a apparatus for processing substrates is operated with a guide plate spaced from a substrate supported therein so as to form a gap which covers the substrate surface to be protected from contamination by moisture condensing in the chamber during the rapid evacuation thereof. During the evacuation of the chamber, by either pumping or venting, clean dry gas is introduced through an orifice in the center of the plate so as to flow outwardly from the edge of the gap at a pressure sufficient to displace or otherwise prevent gas borne moisture condensate in the chamber from entering the gap and contaminating the surface to be protected of the substrate. During the evacuation of the chamber, gas is introduced through the gap at a flow rate less that of the evacuating gas.

Abstract translation: 用于处理基板的设备的负载锁定的压力密封室由与支撑在其中的基板间隔开的引导板进行操作，以形成覆盖基板表面的间隙，以防止在室内的湿气冷凝的污染 迅速撤离。 在室抽真空期间，通过泵送或排气，清洁的干燥气体通过板的中心的孔口被引入，以便以足够的压力从间隙的边缘向外流动以替代或以其它方式防止气体湿气 室内的冷凝物不会进入间隙并污染待保护的表面。 在室的排空过程中，气体以比排气减少的流量通过间隙引入。

公开(公告)号：US5154730A

公开(公告)日：1992-10-13

申请号：US701771

申请日：1991-05-17

Applicant: Julian Hodos ,  Steven Hurwitt

Inventor： Julian Hodos ,  Steven Hurwitt

IPC: B65G49/07 ,  C23C14/50 ,  C23C14/56 ,  H01L21/203 ,  H01L21/677 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01L21/67748 ,  C23C14/505 ,  C23C14/568 ,  H01L21/67751 ,  H01L21/68707 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785 ,  Y10T29/41

Abstract: A sputtering module incorporated into a wafer processing system includes an evacuatable housing connectable to one or more other evacuatable housings and a wafer handling turret adapted to receive a wafer in horizontal orientation at a load/unload position and rotate the wafer 180.degree. about an inclined axis into vertical orientation at a sputtering position across from a sputtering target. After sputter coating, the wafer handling turret again rotates 180.degree. about the inclined axis to rotatably return the wafer to the horizontal load/unload position, whereupon the wafer is lowered to a horizontal receiving position for subsequent retrieval by an arm extendible into the module from an adjacently situated housing. The wafer handling turret includes three wafer holding rings and a disc-shaped shutter that is rotatably located in front of the target during precleaning.

Abstract translation: 结合到晶片处理系统中的溅射模块包括可连接到一个或多个其它可抽空壳体的可抽空壳体和晶片处理转台，其适于在装载/卸载位置处以水平取向接收晶片，并且使晶片绕倾斜轴线旋转180度 在溅射靶的溅射位置处成垂直取向。 在溅射涂覆之后，晶片处理转台再次围绕倾斜轴线旋转180度，以将晶片可旋转地返回到水平加载/卸载位置，于是晶片下降到水平接收位置，以便随后通过可扩展到模块中的臂进行取出 一个相邻的房屋。 晶片处理转台包括三个晶片保持环和在预清洗期间可转动地位于目标前方的盘形挡板。

公开(公告)号：US06689254B1

公开(公告)日：2004-02-10

申请号：US08439490

申请日：1995-05-11

Applicant: Steven Hurwitt

Inventor： Steven Hurwitt

IPC: C23C1434

CPC classification number: H01J37/3435 ,  C23C14/3407 ,  C23C14/35 ,  C23C14/54 ,  H01J37/34 ,  H01J37/3408 ,  H01J37/3414 ,  H01J37/3423 ,  H01J37/3455 ,  H01J37/3458 ,  H01J37/3497

Abstract: A sputtering apparatus is provided with a cathode assembly formed of a cathode unit having a moveable magnet assembly and a cooling water source therein, and a removable target assembly that includes a replaceable target unit and a removable and preferably reusable cooling jacket that seals to the rear face of the target unit and encloses a cooling cavity therebetween. Ducts are configured to automatically disconnect and reconnect the cooling cavity to the water source when the target assembly is removed from and reconnected in the cathode assembly. The target unit includes a volume of sputtering material on which is a front sputtering face, and has a recessed rim surrounding the sputtering face. The rim is configured to form a vacuum seal to the wall of a sputtering chamber and a water seal to the cooling jacket. Thereby, the magnet assembly is isolated from contact with the cooling liquid. A central connection, preferably in the form of a projecting hub, is centered at the target unit back and connects to a shaft in the cathode assembly to support the target material against distortion from pressure and heat variances, generally tending to force the center of the target into the processing chamber. Preferably, the target is formed of an integral piece of sputtering material, where the material permits, and otherwise the rim and hub may be part of a backing plate bonded to the target material to form the target unit. In either event, the back of the target unit is intrinsically, or is coated or otherwise treated to be, impermeable to contamination from the cooling water.

Abstract translation: 溅射装置设置有由阴极单元形成的阴极组件，阴极单元具有可移动的磁体组件和冷却水源，以及可移除的目标组件，其包括可更换的目标单元和可拆卸且优选地可重复使用的冷却套，其密封到后部 目标单元的表面并且在其间包围冷却腔。 管道被配置为当目标组件从阴极组件中移出并重新连接时自动断开并重新连接冷却腔至水源。 目标单元包括溅射材料的体积，其上是前溅射面，并且具有围绕溅射面的凹陷边缘。 轮辋构造成对溅射室的壁形成真空密封，并将冷却套的水封形成真空密封。 由此，磁体组件与冷却液接触隔离。 优选地以突出轮毂的形式的中心连接在目标单元的后面中心并且连接到阴极组件中的轴以支撑目标材料以防止来自压力和热变化的变形，通常倾向于迫使 目标进入处理室。 优选地，目标由整体的溅射材料形成，其中材料允许，否则边缘和轮毂可以是结合到目标材料的背板的一部分以形成目标单元。 在任一情况下，目标单元的背面本质上或被涂覆或以其他方式被处理为不可渗透的来自冷却水的污染物。

公开(公告)号：US06464841B1

公开(公告)日：2002-10-15

申请号：US08812091

申请日：1997-03-04

Applicant: Steven Hurwitt

Inventor： Steven Hurwitt

IPC: C23C1435

CPC classification number: H01J37/3455 ,  C23C14/35 ,  H01J37/3408

Abstract: A sputtering system for depositing a thin film onto a substrate is disclosed wherein the system includes an evacuatable chamber which includes the substrate. In particular, the system includes a target positioned within the chamber, wherein the target has a back surface and a sputtering surface. Further, the system includes plasma for eroding the target to provide material for forming the thin film wherein erosion of the target occurs in a predetermined erosion pattern and is controlled by a shape of the plasma. The system also includes a support for supporting the substrate opposite the sputtering surface. A magnet arrangement is provided which provides a magnetic field on the target for controlling the shape of the plasma, wherein the magnet arrangement is positioned adjacent the back surface. The magnet arrangement includes a plurality of magnet segments which may be moved into desired positions so as to change the shape of the magnet arrangement. This enables adjustment of a dwell time of the magnetic field over predetermined portions of the target to change the shape of the plasma and thus change the erosion pattern of the target.

Abstract translation: 公开了一种用于将薄膜沉积到基底上的溅射系统，其中所述系统包括包括所述基底的可抽空腔。 特别地，该系统包括定位在室内的靶，其中靶具有后表面和溅射表面。 此外，该系统包括用于侵蚀靶的等离子体，以提供用于形成薄膜的材料，其中以预定的侵蚀模式发生靶的侵蚀并且由等离子体的形状控制。 该系统还包括用于支撑与溅射表面相对的衬底的支撑件。 提供磁体布置，其在目标上提供磁场以控制等离子体的形状，其中磁体布置邻近背面定位。 磁体布置包括可以移动到期望位置以便改变磁体布置的形状的多个磁体段。 这使得能够在目标的预定部分上调整磁场的驻留时间，以改变等离子体的形状，从而改变目标的侵蚀模式。

公开(公告)号：US5409590A

公开(公告)日：1995-04-25

申请号：US816137

申请日：1991-12-31

Applicant: Steven Hurwitt ,  Robert Hieronymi ,  Israel Wagner

Inventor： Steven Hurwitt ,  Robert Hieronymi ,  Israel Wagner

IPC: C23C14/04 ,  C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  H01J37/34

CPC classification number: H01J37/32935 ,  C23C14/04 ,  C23C14/046 ,  C23C14/3407 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3408 ,  H01J37/3423 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3458 ,  H01J37/3497 ,  H01J2237/3327

Abstract: A target of a thickness, which varies across its radius according to the amount of material required to be sputtered, is supported in a nest in a chamber of a sputter coating apparatus. Positioned behind the nest is a rotating magnet carrier having arranged thereon in a closed loop a permanant or electro magnetic strip, but preferably a flexible permanently magnetic material, with portions near the rim of the target and portions near, but not on, the target center about which the magnet rotates. The magnetic loop is transversely polarized with one pole toward the target rim and one toward the target center so that its field will enclose the rim of the target within a magnetic tunnel that traps a plasma over the target. Lumped magnets across the center from the strip support the plasma near the center so as to cause some sputtering at the target center. Other lumped magnets adjacent the strip help sharpen the field so that a desired distribution of sputtering can be achieved. Enclosed in a sealed space behind and in thermal contact with the target nest is the carrier from which the magnets project to facilitate the flow of cooling fluid across the back surface of the nest to cool the target as the carrier rotates.

Abstract translation: 根据溅射需要的材料的量，其半径上的厚度变化的靶被支撑在溅射涂覆装置的腔室中。 位于巢后面的是旋转磁体载体，其在密封环中布置有永久或电磁条，但优选地是柔性永久磁性材料，其具有靠近靶的边缘的部分和靠近但不在目标中心的部分 磁体绕其旋转。 磁环以一极朝向目标边缘横向极化，一个朝向目标中心，使其磁场将围绕目标的边缘封闭在通过目标的等离子体上的磁通道内。 从中心穿过中心的集中磁体支撑中心附近的等离子体，从而在目标中心处引起一些溅射。 与带相邻的其他集中磁体有助于锐化场，从而可以实现期望的溅射分布。 封闭在与目标巢后面并与之接触的密封空间是磁体突出的载体，以便于冷却流体跨过巢的后表面流动，以在载体旋转时冷却目标物。

公开(公告)号：US5366322A

公开(公告)日：1994-11-22

申请号：US103199

申请日：1993-08-09

Applicant: Steven Hurwitt

Inventor： Steven Hurwitt

IPC: E03F1/00

CPC classification number: E03F1/00

Abstract: Apparatus for containment and/or equalization of effluent flow and runoff includes a plurality of compartments situated in a receiving body of water in a manner which prevents leakage of undiluted, polluted water into the receiving body of water. An inner, central compartment receives effluent flow or runoff and is surrounded or substantially surrounded by other compartments which allow sequential, generally radially outward flow of the effluent material from the central compartment to the receiving body of water. Leakage is further prevented through improved manners of sealing flexible wall compartments from water leakage under the lower edges of the compartment walls.

Abstract translation: 流出物流和径流的容纳和/或均衡装置包括以防止未稀释的被污染水渗入水的接收体内的方式设置在水接收体中的多个隔室。 内部中央隔室接收流出物流或径流，并且被其他隔室包围或基本包围，这些隔室允许从中央隔室到接收水体的顺序的，大致径向向外的流出物料流。 通过改善密封柔性壁隔室的方式进一步防止泄漏，防止在隔室壁的下边缘处漏水。

公开(公告)号：US5223108A

公开(公告)日：1993-06-29

申请号：US816030

申请日：1991-12-30

Applicant: Steven Hurwitt

Inventor： Steven Hurwitt

IPC: C23C14/34 ,  C23C14/04 ,  H01J37/34

CPC classification number: H01J37/3447 ,  C23C14/044 ,  H01J37/34

Abstract: An improved, extended lifetime collimator for cathode sputtering has a plurality of passages which taper longitudinally from a target side of the collimator to a wafer side of the collimator. This longitudinal tapering reduces the adverse effects on collimator useful life and wafer deposition rate which are generally caused by the accumulation of sputtered particles on exposed surfaces on the target side of the collimator. Compared to prior collimators, this collimator may be used to sputter coat a greater number of wafers before replacement or cleaning is necessary, thereby enhancing throughput capability.

Abstract translation: 用于阴极溅射的改进的延长寿命准直器具有从准直器的目标侧到准直器的晶片侧的纵向逐渐变细的多个通道。 这种纵向渐缩减少了对准直器使用寿命和晶片沉积速率的不利影响，这通常是由溅射的颗粒在准直器的目标侧的暴露表面上的积累引起的。 与以前的准直器相比，该准直器可以用于在更换或清洁之前溅射更多数量的晶片，从而提高吞吐能力。

公开(公告)号：US3953703A

公开(公告)日：1976-04-27

申请号：US511673

申请日：1974-10-03

Applicant: Steven Hurwitt

Inventor： Steven Hurwitt

IPC: B28B1/26 ,  C04B33/30 ,  C04B35/622 ,  C04B35/632 ,  C04B35/636 ,  H05B6/78 ,  H05B9/06

CPC classification number: H05B6/78 ,  B28B1/267 ,  B28B11/241 ,  C04B33/30 ,  C04B35/622 ,  C04B35/632 ,  C04B35/636

Abstract: In the manufacture of ceramic products by the tape casting process faster drying rates result from subjecting the layer of cast ceramic slip to high frequency electromagnetic energy evenly distributed along at least the initial portion of the length of a drying chamber and of sufficient intensity to heat the slip to a uniform cross-sectional temperature above the evaporation temperature of the solvent. The high frequency energy, preferably in the microwave range, raises the temperature of the cast slip uniformly to evaporate the volatile solvents from the interior without forming a barrier skin on the surface of the layer. For typical slip thickness, tape speed, and solvent composition, energy densities of about 1 watt per square inch will provide an optimum heating rate without boiling the solvent.

Abstract translation: 在通过带式浇铸工艺制造陶瓷产品时，较快的干燥速率是将铸造陶瓷片层经受至少在干燥室长度的初始部分均匀分布的高频电磁能，并具有足够的强度以加热 滑到均匀的横截面温度高于溶剂的蒸发温度。 高频能量，优选在微波范围内，均匀地提高了流动滑移的温度，以从内部蒸发挥发性溶剂，而不会在该层的表面上形成屏障皮肤。 对于典型的滑移厚度，胶带速度和溶剂组成，约1瓦特/平方英寸的能量密度将提供最佳加热速率而不沸腾溶剂。

公开(公告)号：US06623606B2

公开(公告)日：2003-09-23

申请号：US10155369

申请日：2002-05-24

Applicant: Steven Hurwitt ,  Israel Wagner

Inventor： Steven Hurwitt ,  Israel Wagner

IPC: C23C1434

CPC classification number: H01L21/67253 ,  C23C14/34 ,  C23C14/3407 ,  C23C14/54 ,  H01J37/34 ,  H01J37/347

Abstract: Thickness uniformity of films sputtered from a target onto a series of substrates is maintained as the target surface shape changes due to the consumption of the target. The eroded condition of the target is sensed by directly measuring the position of a point on the target surface, by measuring power consumption of the target, by measuring deposition from the surface of the target or by some other means. A controller responds to the measurement by moving a substrate holder to determine an amount to change the distance between the substrate and the target, usually by moving the substrate closer to the target, by an amount necessary to maintain uniformity of the coatings on the wafers being processed. A servo or stepper motor responds to a signal from the controller to move the substrate holder in accordance with the determined amount of distance change required. The adjustment is made following the coating of wafers at various times over the life of the target.

公开(公告)号：US06183523B2

公开(公告)日：2001-02-06

申请号：US08810359

申请日：1997-03-03

Applicant: Steven Hurwitt ,  Ira Reiss

Inventor： Steven Hurwitt ,  Ira Reiss

IPC: H01L2100

CPC classification number: H01L21/67109 ,  H01J2237/2001 ,  H01L21/68785 ,  Y10T29/41

Abstract: A substrate support platform has a substrate engaging surface which defines a first channel for introducing and distributing a thermal transfer gas to a first region of the engaging surface, and a second channel, nonintersecting with the first channel, for introducing and distributing a thermal transfer gas to a second region of the engaging surface. A gas delivery system is independently connected between a gas source and the first and second channels, for independently providing (via valved connections) a thermal transfer gas to the first and second channels, so that gas delivery may be limited to one of the channels, or gas may be delivered to both of the channels in case a substrate is placed over either or both of the associated regions. A pressure measuring device is independently coupled to each of the channels via measuring ports, permitting measurement and control of gas pressure from the gas source.

Abstract translation: 基板支撑平台具有基板接合表面，该基板接合表面限定用于将热传递气体引入和分配到接合表面的第一区域的第一通道，以及与第一通道不间接的第二通道，用于引入和分配热传递气体 到达接合表面的第二区域。 气体输送系统独立地连接在气体源和第一和第二通道之间，用于独立地将热转移气体（通过阀连接）提供给第一和第二通道，使得气体输送可以限于通道之一， 或者在将衬底放置在相关联的区域中的任一个或两者上的情况下，气体可以被传送到两个通道。 压力测量装置通过测量端口独立地连接到每个通道，允许测量和控制来自气源的气体压力。