公开(公告)号：US5562819A

公开(公告)日：1996-10-08

申请号：US555256

申请日：1995-11-08

Applicant: Richard R. Turner, Jr. ,  Steven Hurwitt

Inventor： Richard R. Turner, Jr. ,  Steven Hurwitt

IPC: B01D17/12 ,  B01D29/27 ,  B01D35/143 ,  E03F5/14 ,  B01D35/02

CPC classification number: E03F5/14 ,  B01D29/27 ,  B01D2201/48 ,  B01D35/143

Abstract: Apparatus for trapping and collecting debris including an in-line trap contained in a subterranean chamber having an inlet and an outlet for connection to an underground conduit such as a sewer or storm drain conduit. The trap comprises a net being closed on all sides except on an inlet side which faces the inlet to the chamber. The chamber is contained in a vault having a set of upper doors and the bag is attached to a frame structure having suitable supports which may be grasped such that the bag may be lifted upwardly through the doors for replacement. An overflow weir is provided for allow flow past the trap when the bag is full of debris. Sensing systems are further provided for detecting and signalling when the bag is full. A multi-bag system is also disclosed in which at least two bags in parallel are provided such that one bag may accommodate overflow when the other is being serviced.

Abstract translation: 用于捕获和收集碎片的装置，包括包含在地下室中的嵌入式捕集器，其具有用于连接到诸如下水道或暴雨排放管道的地下管道的入口和出口。 捕集器包括除了面向入口到入口侧的所有侧面上的网。 该室被容纳在具有一组上门的拱顶中，并且该袋附接到具有合适的支撑件的框架结构，框架结构可以被抓住，使得袋可以被向上提升通过门以供更换。 提供溢流堰，当袋子充满碎屑时，允许流过陷阱。 进一步提供感测系统用于当袋子充满时检测和发信号。 还公开了一种多袋系统，其中提供至少两个平行的袋，使得当另一个袋被维修时，一个袋可容纳溢流。

公开(公告)号：US5490914A

公开(公告)日：1996-02-13

申请号：US388205

申请日：1995-02-14

Applicant: Steven Hurwitt ,  Corey Weiss

Inventor： Steven Hurwitt ,  Corey Weiss

IPC: C23C14/34 ,  H01J37/34

CPC classification number: H01J37/3435 ,  C23C14/3407 ,  H01J37/3423

Abstract: A sputtering target comprises a disc machined from a first piece of target grade material, having a front sputtering face and a rear face opposite. The sputtering face and target material erode during use to define a final sputtered face contour and a residual target thickness t measured from the rear face. A hub is machined from a second piece of material and is secured to the rear face of the disc. The securement device utilizes a depth of target material measured from the rear face which minimizes the thickness t in a region adjacent the hub so as to maximize the amount of the target grade material sputterable before in the region before encountering the securement device. In another form, the disc and hub are forged from a single starting slug of target grade material. The slug has an initial height to diameter ratio such that the flow lines developed in displaced target material during forging which turn upward from the disc into the hub are located at a depth of the target material measured from the rear face which also minimizes the thickness t so as to maximize the amount of the target grade material sputterable.

Abstract translation: 溅射靶包括从第一目标等级材料加工的圆盘，其具有前溅射面和相对的后表面。 溅射面和目标材料在使用过程中会腐蚀，以确定最后的溅射面轮廓和从背面测得的残余目标厚度t。 轮毂由第二块材料加工而成，并固定在盘的后表面。 固定装置利用从后表面测量的目标材料的深度，其最小化与轮毂相邻的区域中的厚度t，以便在遇到固定装置之前在该区域之前使可溅射的目标等级材料的量最大化。 在另一种形式中，盘和轮毂是从目标级材料的单个起始部分锻造的。 该块塞具有初始的高度与直径的比例，使得在锻造期间由位移的目标材料在盘中向上转动到毂中的流动线位于从背面测量的目标材料的深度上，其也使厚度t最小化 以便最大限度地提高目标级材料的可溅射量。

公开(公告)号：US5391281A

公开(公告)日：1995-02-21

申请号：US45368

申请日：1993-04-09

Applicant: Robert Hieronymi ,  Steven Hurwitt

Inventor： Robert Hieronymi ,  Steven Hurwitt

IPC: H05H1/46 ,  C23F4/00 ,  H01J37/32 ,  H01J37/34 ,  H01L21/302 ,  H01L21/3065 ,  C23C14/00

CPC classification number: H01J37/32458 ,  H01J37/32623 ,  H01J37/34 ,  H01J37/347 ,  H01J2237/334

Abstract: A re-entrant plug structure is disclosed which extends inside a processing chamber containing an ionized plasma in proximity to the plasma to physically displace the ionized plasma and selectively controllably vary concentration of ionized gas particles over the surface of a wafer to be sputter etched which is supported inside the chamber. The variation of concentration of the ionized plasma allows the selectively controllable variation of sputter etch rates on the surface of the wafer. The re-entrant plug structure may be formed as part of the enclosure cover of the processing chamber or may be a separable moveable unit which is inserted into the plasma through an opening in the processing chamber. The re-entrant plug may be of various lengths, diameters and shapes to displace and shape the ionized plasma. In an alternative embodiment of the invention, the plug contains a permanent or electromagnet which further magnetically displaces and shapes the plasma in addition to the physical displacement caused by the re-entrant plug.

Abstract translation: 公开了一种重新插入的插塞结构，其在包含等离子体附近的离子化等离子体的处理室内部延伸以物理地置换离子化的等离子体并且选择性地可控地改变要溅射蚀刻的晶片的表面上的离子化气体的浓度， 支撑在室内。 离子化等离子体的浓度变化允许在晶片表面上的溅射蚀刻速率的选择性可控的变化。 重入插头结构可以形成为处理室的外壳盖的一部分，或者可以是通过处理室中的开口插入到等离子体中的可分离的可移动单元。 重入插头可以具有各种长度，直径和形状以移位和形成电离等离子体。 在本发明的替代实施例中，插头包括永磁体或电磁体，除了由插入件引起的物理位移之外，还进一步对等离子体进行磁性取代和成形。

公开(公告)号：US5284561A

公开(公告)日：1994-02-08

申请号：US791415

申请日：1991-11-13

Applicant: Frank M. Shinneman ,  Steven Hurwitt

Inventor： Frank M. Shinneman ,  Steven Hurwitt

IPC: C23C14/34 ,  C23C14/54 ,  H01J37/34

CPC classification number: H01J37/3414 ,  C23C14/3407 ,  C23C14/54 ,  H01J37/34

Abstract: An expendable target of sputter coating material is provided having secured thereto a storage medium having recorded thereon, in machine readable indicia, information relating to a characteristic of the target. The information preferably includes target identifying information and may also include information relating to the target composition, the history of the use of the target, and other information usable by the apparatus to automatically set machine parameters or to record process information. Information, particularly of the use of the target, may be updated and written to a medium on the target or target assembly, or to a machine readable medium which may be affixed to the target assembly when the target is removed. The apparatus preferably includes a read head in the sputtering chamber and may also include a write head for writing information to the target assembly. A memory and microprocessor cooperate with the machine control to utilize the information read from the target in the control of the sputtering apparatus.

Abstract translation: 提供溅射涂层材料的消耗性目标，其上固定有以机器可读标记记录有关于目标特征的信息的存储介质。 信息优选地包括目标识别信息，并且还可以包括与目标组合有关的信息，目标的使用历史以及该装置可用于自动设置机器参数或记录处理信息的其他信息。 可以将特别是目标的使用的信息更新并写入目标组件或目标组件上的介质，或者可以在移除目标时可以固定到目标组件的机器可读介质。 该设备优选地包括在溅射室中的读取头，并且还可以包括用于向目标组件写入信息的写入头。 存储器和微处理器与机器控制器配合以利用在溅射装置的控制中从目标读取的信息。

公开(公告)号：US06416635B1

公开(公告)日：2002-07-09

申请号：US08505739

申请日：1995-07-24

Applicant: Steven Hurwitt ,  Israel Wagner

Inventor： Steven Hurwitt ,  Israel Wagner

IPC: C23C1434

CPC classification number: H01L21/67253 ,  C23C14/34 ,  C23C14/3407 ,  C23C14/54 ,  H01J37/34 ,  H01J37/347

Abstract: Thickness uniformity of films sputtered from a target onto a series of substrates is maintained as the target surface shape changes due to the consumption of the target. The eroded condition of the target is sensed by directly measuring the position of a point on the target surface, by measuring power consumption of the target, by measuring deposition from the surface of the target or by some other means. A controller responds to the measurement by moving a substrate holder to determine an amount to change the distance between the substrate and the target, usually by moving the substrate closer to the target, by an amount necessary to maintain uniformity of the coatings on the wafers being processed. A servo or stepper motor responds to a signal from the controller to move the substrate holder in accordance with the determined amount of distance change required. The adjustment is made following the coating of wafers at various times over the life of the target.

Abstract translation: 由于靶的消耗，目标表面形状发生变化，因此维持从目标溅射到一系列基板上的膜的厚度均匀性。 通过直接测量目标表面上的一个点的位置，通过测量目标的功耗，通过测量目标表面的沉积或其他方式来感测目标的侵蚀状态。 控制器通过移动衬底保持器来移动衬底保持器来确定用于改变衬底和靶之间的距离的量，通常通过使衬底更靠近靶的方式移动基板，以保持晶片上的涂层的均匀性所需的量 处理。 伺服或步进电机响应来自控制器的信号，以根据所确定的距离变化量移动衬底支架。 调整是在目标寿命的不同时间涂覆晶片之后进行的。

公开(公告)号：US5925226A

公开(公告)日：1999-07-20

申请号：US820818

申请日：1997-03-19

Applicant: Steven Hurwitt ,  Vaclav Jelinek

Inventor： Steven Hurwitt ,  Vaclav Jelinek

IPC: C23C14/50 ,  H01L21/687

CPC classification number: H01L21/68721 ,  C23C14/50 ,  H01L21/68735

Abstract: An apparatus is disclosed for clamping a substrate or wafer with a predetermined force during a sputtering process for maintaining a minimal gap between the wafer and a backplane in order to provide a uniform temperature distribution on the wafer. The apparatus includes a first suspension system which includes a diaphragm having a plurality of spring sections positioned in contact with an outer peripheral area of an upper surface of the wafer. The spring sections are positioned immediately adjacent to each other to provide substantially continuous and uniform loading of the outer periphery in order to eliminate edge gaps. The apparatus further includes a second suspension system which includes a mounting ring having a plurality of springs each of which are secured to a fixed element. The first and second suspension systems are configured such that approximately 80 to 90% of the total spring deflection is provided by the second suspension system whereas the remaining 10 to 20% of the total spring deflection is provided by the first suspension system.

Abstract translation: 公开了一种用于在溅射过程期间以预定的力夹持衬底或晶片的装置，用于保持晶片和背板之间的最小间隙，以便在晶片上提供均匀的温度分布。 该装置包括第一悬架系统，该第一悬架系统包括具有与晶片上表面的外周区域接触的多个弹簧部分的隔膜。 弹簧部分彼此紧邻地设置，以便为了消除边缘间隙而提供基本上连续且均匀的外周边的载荷。 该装置还包括第二悬架系统，其包括具有多个弹簧的安装环，每个弹簧固定在固定元件上。 第一和第二悬架系统构造成使得总弹簧偏转的大约80％到90％由第二悬架系统提供，而总的弹簧挠度的剩余的10到20％由第一悬架系统提供。

公开(公告)号：US5879524A

公开(公告)日：1999-03-09

申请号：US608857

申请日：1996-02-29

Applicant: Steven Hurwitt ,  Ira Reiss

Inventor： Steven Hurwitt ,  Ira Reiss

IPC: C23C14/34 ,  H01J37/34

CPC classification number: H01J37/3435 ,  C23C14/3407

Abstract: A composite backing plate (34) for a backing plate-target assembly (41) having a core of structural material (36) with a front face (42) and/or a rear face (44) of a different material laminated thereto. The composite backing plate (35) has the desired mechanical properties of a solid copper backing plate, for example, strength and stiffness, but is preferably less than half the density of a solid copper backing plate. The core material is preferably aluminum; the front face is preferably copper; and the rear face is preferably either copper or an organic material.

Abstract translation: 一种用于背板 - 目标组件（41）的复合背板（34），其具有结构材料芯（36），其具有层压在其上的不同材料的前表面（42）和/或后表面（44）。 复合背板（35）具有固体铜背板的期望的机械性能，例如强度和刚度，但优选小于实心铜背板的密度的一半。 芯材优选为铝; 前表面最好是铜; 后表面优选为铜或有机材料。

公开(公告)号：US5569361A

公开(公告)日：1996-10-29

申请号：US398743

申请日：1995-03-06

Applicant: Steven Hurwitt

Inventor： Steven Hurwitt

IPC: C23C14/34

CPC classification number: C23C14/3407

Abstract: Method and apparatus for cooling a sputtering target is provided. The method comprises the steps of providing a sputtering target and a cooling surface in operable conductive heat transfer contact with the sputtering target, introducing a cooling liquid onto the cooling surface to conductively remove heat from the sputtering target, allowing at least a portion of the cooling liquid to change phase into a vapor, and preventing a continuous insulating vapor layer from forming on the cooling surface to ensure continuing conductive heat transfer from the target to the cooling surface so as to avoid overheating of the target. The apparatus comprises a cooling surface in operable conductive heat transfer contact with the sputtering target to conductively remove heat from the target when a cooling liquid is introduced onto the cooling surface, and means for allowing at least a portion of the cooling liquid to change phase into a vapor while preventing a continuous insulating vapor layer from forming on the cooling surface to ensure continuing conductive heat transfer from the target to the cooling surface so as to avoid overheating of the target.

Abstract translation: 提供了用于冷却溅射靶的方法和装置。 该方法包括以下步骤：提供与溅射靶可操作的导电传热接触的溅射靶和冷却表面，将冷却液引入冷却表面，以导电地从溅射靶去除热量，允许至少一部分冷却 液体将相变成蒸汽，并且防止在冷却表面上形成连续的绝缘蒸气层，以确保从目标到冷却表面的继续传导热传递，从而避免目标的过热。 所述装置包括与所述溅射靶可操作地导电传热接触的冷却表面，以便当将冷却液体引入所述冷却表面时导电地从所述目标物除去热量;以及用于允许所述冷却液的至少一部分将相变为相变的装置 蒸汽同时防止在冷却表面上形成连续的绝缘蒸气层，以确保从目标到冷却表面的传导热传导，从而避免目标的过热。

公开(公告)号：US5783048A

公开(公告)日：1998-07-21

申请号：US734207

申请日：1996-10-21

Applicant: Steven Hurwitt

Inventor： Steven Hurwitt

IPC: C23C14/34 ,  C23C14/35 ,  C23F4/00 ,  H01J37/34

CPC classification number: C23C14/35 ,  H01J37/3402

Abstract: A sputtering apparatus for forming a thin film on a substrate is disclosed. The sputtering apparatus includes a target for providing target material for forming the thin film, wherein the target includes a first area. The sputtering apparatus further includes a plasma discharge to enable removal of target material from the target. In addition, a main magnet is provided for generating a main magnetic field for controlling the plasma discharge to remove the target material. Further, a compensating magnet is utilized which is positioned adjacent to the first area. The compensating magnet generates a compensating magnetic field which interacts with the main magnetic field to control the plasma discharge in the first area to form a desired erosion pattern in the first area and enable formation of a substantially uniform film thickness on the substrate.

Abstract translation: 公开了一种用于在基板上形成薄膜的溅射装置。 溅射装置包括用于提供用于形成薄膜的目标材料的靶，其中靶包括第一区域。 溅射装置还包括等离子体放电，以能够从目标物去除目标材料。 此外，提供主磁体用于产生用于控制等离子体放电以除去目标材料的主磁场。 此外，使用与第一区域相邻的补偿磁体。 补偿磁体产生与主磁场相互作用的补偿磁场，以控制第一区域中的等离子体放电，以在第一区域中形成期望的侵蚀图案，并使得能够在基板上形成基本均匀的膜厚度。

公开(公告)号：US5336386A

公开(公告)日：1994-08-09

申请号：US967458

申请日：1992-10-28

Applicant: Daniel R. Marx ,  Steven Hurwitt

Inventor： Daniel R. Marx ,  Steven Hurwitt

IPC: C23C14/34 ,  H01J37/34

CPC classification number: H01J37/3435 ,  C23C14/3407 ,  H01J37/3423

Abstract: A sputtering target and target assembly includes a target member having a substantially continuously concave top surface and a bottom surface with a central, downwardly directed hub and at least three annular regions of differing radius of curvature. The shape of the target member bottom surface conforms to a backplate to which it is mounted, thereby facilitating accurate mounting of the target member during sputtering. The corresponding shapes of the target member and backplate promote maximum utilization of sputtering material.

Abstract translation: 溅射靶和目标组件包括具有基本上连续凹入的顶表面的目标构件和具有中心向下指向的毂和至少三个不同曲率半径的环形区域的底表面。 目标构件底面的形状符合安装在其上的背板，从而有助于在溅射期间准确地安装目标构件。 目标构件和背板的相应形状促进了溅射材料的最大利用。