公开(公告)号：US20190109128A1

公开(公告)日：2019-04-11

申请号：US16210753

申请日：2018-12-05

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Henry L. Edwards ,  Akram A. Salman ,  Md Iqbal Mahmud

IPC: H01L27/02 ,  H01L29/06

Abstract: An electrostatic discharge (ESD) protection circuit (FIG. 2A) for an integrated circuit is disclosed. The circuit is formed on a substrate (P-EPI) having a first conductivity type. A buried layer (NBL 240) having a second conductivity type is formed below a face of the substrate. A first terminal (206) and a second terminal (204) are formed at a face of the substrate. A first ESD protection device (232) has a first current path between the first terminal and the buried layer. A second ESD protection device (216) has a second current path in series with the first current path and between the second terminal and the buried layer.

公开(公告)号：US20130255741A1

公开(公告)日：2013-10-03

申请号：US13798878

申请日：2013-03-13

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Henry L. Edwards ,  Richard B. Irwin ,  Tathagata Chatterjee

IPC: H01L35/30 ,  H01L35/34

CPC classification number: H01L35/30 ,  H01L23/345 ,  H01L23/38 ,  H01L27/16 ,  H01L35/34 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated circuit with an embedded heat exchanger for coupling heat to an embedded thermoelectric device from a thermal source that is electrically isolated from a thermoelectric device. A method for forming an integrated circuit with an embedded heat exchanger.

Abstract translation: 一种具有嵌入式热交换器的集成电路，用于将热量从与热电装置电隔离的热源耦合到嵌入式热电装置。 一种用嵌入式热交换器形成集成电路的方法。

公开(公告)号：US20130188667A1

公开(公告)日：2013-07-25

申请号：US13798544

申请日：2013-03-13

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Henry L. Edwards

IPC: G01K7/02 ,  H01L27/16

CPC classification number: G01K7/02 ,  H01L22/34 ,  H01L23/345 ,  H01L23/38 ,  H01L27/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated circuit containing an embedded resistor in close proximity to an embedded thermoelectric device. An integrated circuit containing an embedded resistor in close proximity to an embedded thermoelectric device composed of thermoelectric elements and at least one switch to disconnect at least one thermoelectric element from the thermoelectric device. Methods for testing embedded thermoelectric devices.

Abstract translation: 一个集成电路，包含一个嵌入式电阻器，靠近嵌入式热电器件。 一种包含嵌入式电阻器的集成电路，该嵌入式电阻器靠近由热电元件组成的嵌入式热电装置，以及至少一个用于从热电装置断开至少一个热电元件的开关。 嵌入式热电器件测试方法。

公开(公告)号：US10930641B2

公开(公告)日：2021-02-23

申请号：US16210753

申请日：2018-12-05

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Henry L. Edwards ,  Akram A. Salman ,  Md Iqbal Mahmud

IPC: H01L27/02 ,  H01L29/06

Abstract: An electrostatic discharge (ESD) protection circuit (FIG. 2A) for an integrated circuit is disclosed. The circuit is formed on a substrate (P-EPI) having a first conductivity type. A buried layer (NBL 240) having a second conductivity type is formed below a face of the substrate. A first terminal (206) and a second terminal (204) are formed at a face of the substrate. A first ESD protection device (232) has a first current path between the first terminal and the buried layer. A second ESD protection device (216) has a second current path in series with the first current path and between the second terminal and the buried layer.

公开(公告)号：US20150270257A1

公开(公告)日：2015-09-24

申请号：US14221432

申请日：2014-03-21

Applicant: Texas Instruments Incorporated

Inventor： Henry L. Edwards ,  Akram A. Salman ,  Md Iqbal Mahmud

IPC: H01L27/02 ,  H01L21/8222 ,  H01L29/06

CPC classification number: H01L27/0262 ,  H01L27/0259 ,  H01L29/0649

Abstract: An electrostatic discharge (ESD) protection circuit (FIG. 2A) for an integrated circuit is disclosed. The circuit is formed on a substrate (P-EPI) having a first conductivity type. A buried layer (NBL 240) having a second conductivity type is formed below a face of the substrate. A first terminal (206) and a second terminal (204) are formed at a face of the substrate. A first ESD protection device (232) has a first current path between the first terminal and the buried layer. A second ESD protection device (216) has a second current path in series with the first current path and between the second terminal and the buried layer.

Abstract translation: 公开了一种用于集成电路的静电放电（ESD）保护电路（图2A）。 电路形成在具有第一导电类型的基板（P-EPI）上。 在衬底的表面下方形成具有第二导电类型的掩埋层（NBL 240）。 第一端子（206）和第二端子（204）形成在基板的表面。 第一ESD保护装置（232）在第一端子和埋层之间具有第一电流路径。 第二ESD保护装置（216）具有与第一电流路径串联的第二电流路径，以及在第二端子和埋层之间。

公开(公告)号：US20240153938A1

公开(公告)日：2024-05-09

申请号：US18148658

申请日：2022-12-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Neil Gibson ,  Jerry L. Doorenbos ,  Gerald Gradl ,  VIOLA Schaeffer ,  Archana Venugopal ,  Henry L. Edwards

IPC: H01L27/02 ,  H01L27/088 ,  H01L27/12

CPC classification number: H01L27/0207 ,  H01L27/088 ,  H01L27/1207

Abstract: An integrated circuit includes a first transistor array over a semiconductor substrate and is distributed among a first plurality of first transistor banks. A second transistor array in or over the semiconductor substrate is distributed among a second plurality of second transistor banks. A first one of the first transistor banks is located between a first one and a second one of the second transistor banks, and the second one of the second transistor banks is located between the first one of the first transistor banks and a second one of the first transistor banks. The first transistor array and the second transistor array may be alternately operated to implement a voltage-conversion integrated circuit.

公开(公告)号：US10573578B2

公开(公告)日：2020-02-25

申请号：US13798592

申请日：2013-03-13

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Henry L. Edwards

IPC: H01L23/38

Abstract: An integrated circuit has thermoelectric cooling devices integrated into bondpads. A method for operating the integrated circuit includes turning a thermal switch to a thermoelectric cooler operate position when the integrated circuit is powered up, turning the thermal switch to a thermoelectric cooler operate position to allow the thermoelectric cooler to operate when the integrated circuit powers down, and turning the thermal switch to a thermoelectric cooler off position when a predetermined integrated circuit chip temperature is reached.

公开(公告)号：US20180323361A1

公开(公告)日：2018-11-08

申请号：US16031868

申请日：2018-07-10

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Henry L. Edwards ,  Kenneth J. Maggio ,  Steven Kummerl ,  Sreenivasan K. Koduri

IPC: H01L35/28 ,  H01L23/00 ,  H05K1/02 ,  H01L29/02 ,  H05K1/18 ,  H01L23/38

CPC classification number: H01L35/28 ,  H01L21/568 ,  H01L23/38 ,  H01L24/18 ,  H01L24/19 ,  H01L24/24 ,  H01L24/25 ,  H01L29/02 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/2518 ,  H01L2224/32225 ,  H01L2224/92144 ,  H01L2924/12042 ,  H05K1/0203 ,  H05K1/185 ,  H05K2201/0358 ,  H05K2201/10219 ,  H01L2924/00

Abstract: A circuit board includes an embedded thermoelectric device with hard thermal bonds. A method includes embedding a thermoelectric device in a circuit board and forming hard thermal bonds.

公开(公告)号：US09831231B2

公开(公告)日：2017-11-28

申请号：US14952124

申请日：2015-11-25

Applicant: Texas Instruments Incorporated

Inventor： Henry L. Edwards ,  Akram A. Salman ,  Lili Yu

IPC: H01L23/62 ,  H01L27/02 ,  H02H9/04 ,  H01L21/8222 ,  H01L29/08 ,  H01L29/10 ,  H01L29/732 ,  H01L29/735 ,  H01L29/861 ,  H01L21/8224 ,  H01L29/66

CPC classification number: H01L27/0262 ,  H01L21/8222 ,  H01L21/8224 ,  H01L27/0255 ,  H01L27/0259 ,  H01L27/0288 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/66113 ,  H01L29/732 ,  H01L29/735 ,  H01L29/861 ,  H02H9/046

Abstract: An electrostatic discharge (ESD) protection circuit (FIG. 3C) is disclosed. The circuit includes a bipolar transistor (304) having a base, collector, and emitter. Each of a plurality of diodes (308-316) has a first terminal coupled to the base and a second terminal coupled to the collector. The collector is connected to a first terminal (V+). The emitter is connected to a first power supply terminal (V−).

公开(公告)号：US20160079228A1

公开(公告)日：2016-03-17

申请号：US14952124

申请日：2015-11-25

Applicant: Texas Instruments Incorporated

Inventor： Henry L. Edwards ,  Akram A. Salman ,  Lili Yu

IPC: H01L27/02 ,  H01L29/10 ,  H01L29/08 ,  H01L21/8224 ,  H01L29/66

CPC classification number: H01L27/0262 ,  H01L21/8222 ,  H01L21/8224 ,  H01L27/0255 ,  H01L27/0259 ,  H01L27/0288 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/66113 ,  H01L29/732 ,  H01L29/735 ,  H01L29/861 ,  H02H9/046

Abstract: An electrostatic discharge (ESD) protection circuit (FIG. 3C) is disclosed. The circuit includes a bipolar transistor (304) having a base, collector, and emitter. Each of a plurality of diodes (308-316) has a first terminal coupled to the base and a second terminal coupled to the collector. The collector is connected to a first terminal (V+). The emitter is connected to a first power supply terminal (V−).