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公开(公告)号：US20210103213A1
公开(公告)日：2021-04-08
申请号：US17121080
申请日：2020-12-14
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： An-Ren Zi , Joy Cheng , Ching-Yu Chang , Chin-Hsiang Lin
Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a metal-containing chemical; performing an exposing process to the photoresist layer; and performing a first developing process to the photoresist layer using a first developer, thereby forming a patterned resist layer, wherein the first developer includes a first solvent and a chemical additive to remove metal residuals generated from the metal-containing chemical.
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公开(公告)号：US10573519B2
公开(公告)日：2020-02-25
申请号：US15906187
申请日：2018-02-27
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tsung-Han Ko , Joy Cheng , Ching-Yu Chang , Chin-Hsiang Lin
IPC: H01L21/027 , H01L21/308 , G03F7/20 , H01L21/033 , H01L21/266 , G03F7/038 , G03F7/40 , G03F7/09 , G03F7/039 , G03F7/38 , G03F7/26
Abstract: A method for performing a photolithography process is provided. The method includes forming a resist layer over a substrate and exposing a portion of the resist layer to form an exposed region and an unexposed region by performing an exposure process. The method includes performing a baking process on the resist layer, so that voids are formed in the exposed region of the resist layer. The method also includes removing the unexposed region of the resist layer to form a recess in the resist layer and filling a post treatment coating material in the recess and the void. The method further includes removing a portion of the post treatment coating material by performing a second develop process, and another portion of the post treatment coating material is left on surfaces of the exposed region of the resist layer to form a patterned resist layer.
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公开(公告)号：US20190035630A1
公开(公告)日：2019-01-31
申请号：US15664222
申请日：2017-07-31
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chih-Jie Lee , Joy Cheng
IPC: H01L21/033 , G06F17/50 , H01L21/027 , H01L21/02 , G03F1/36
CPC classification number: H01L21/0338 , G03F1/36 , G03F7/0002 , G06F17/5009 , G06F17/5081 , G06F2217/12 , H01L21/02118 , H01L21/02356 , H01L21/0271 , H01L21/0274 , H01L21/0337
Abstract: A method includes receiving a first target pattern of an integrated circuit (IC) that includes two first target features and two second target features. The method further includes deriving a second target pattern based on the first target pattern and a directed self-assembly (DSA) process, wherein the first target pattern is to be produced by a process that includes performing the DSA process with a guide pattern derived from the second target pattern. The second target pattern includes a third feature and a fourth feature. The third feature is designed for producing the two first target features with the DSA process, and the fourth feature is designed for producing the two second target features with the DSA process. The method further includes inserting one or more sub-DSA-resolution assistant features (SDRAF) into the second target pattern, the one or more SDRAF connecting the third and fourth features.
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公开(公告)号：US12253800B2
公开(公告)日：2025-03-18
申请号：US17364020
申请日：2021-06-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： An-Ren Zi , Joy Cheng , Ching-Yu Chang
IPC: G03F7/004
Abstract: A photoresist layer is formed over a wafer. The photoresist layer includes a metallic photoresist material and one or more additives. An extreme ultraviolet (EUV) lithography process is performed using the photoresist layer. The one or more additives include: a solvent having a boiling point greater than about 150 degrees Celsius, a photo acid generator, a photo base generator, a quencher, a photo de-composed base, a thermal acid generator, or a photo sensitivity cross-linker.
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公开(公告)号：US12181798B2
公开(公告)日：2024-12-31
申请号：US18446702
申请日：2023-08-09
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： An-Ren Zi , Joy Cheng , Ching-Yu Chang , Chin-Hsiang Lin
Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a metal-containing chemical; performing an exposing process to the photoresist layer; and performing a first developing process to the photoresist layer using a first developer, thereby forming a patterned resist layer, wherein the first developer includes a first solvent and a chemical additive to remove metal residuals generated from the metal-containing chemical.
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Patent Agency Ranking
公开(公告)号：US11307504B2
公开(公告)日：2022-04-19
申请号：US16905167
申请日：2020-06-18
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： An-Ren Zi , Chin-Hsiang Lin , Ching-Yu Chang , Joy Cheng
IPC: G03F7/20 , G03F7/038 , G03F7/039 , G03F7/06 , G03F7/16 , G03F7/30 , G03F7/32 , G03F7/38 , G03F7/40 , H01L21/027
Abstract: A layer is formed over a wafer. The layer contains a material that is sensitive to an extreme ultraviolet (EUV) radiation. A first baking process is performed to the layer. The first baking process is performed with a first humidity level that is greater than about 44%. After the first baking process, the layer is exposed to EUV radiation. A second baking process is performed to the layer. The second baking process is performed with a second humidity level that is greater than about 44%. The layer is rinsed with a liquid that contains water before the second baking process or after the second baking process. After the exposing, the layer is developed with a developer solution that contains water.
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公开(公告)号：US10796910B2
公开(公告)日：2020-10-06
申请号：US16731664
申请日：2019-12-31
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Tsung-Han Ko , Joy Cheng , Ching-Yu Chang , Chin-Hsiang Lin
IPC: H01L21/027 , G03F7/26 , H01L21/033 , H01L21/308 , H01L21/266 , G03F7/038 , G03F7/20 , G03F7/40 , G03F7/09 , G03F7/039 , G03F7/38
Abstract: A method for performing a photolithography process is provided. The method includes forming a layer over a substrate, and exposing a portion of the layer to form an exposed region. The method also includes performing a baking process on the layer, so that voids are formed in the exposed region of the layer. The method further includes filling the void with a post treatment coating material, and the post treatment coating material is over the exposed region of the layer.
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公开(公告)号：US20200257203A1
公开(公告)日：2020-08-13
申请号：US16858846
申请日：2020-04-27
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： An-Ren Zi , Joy Cheng , Ching-Yu Chang , Chin-Hsiang Lin
Abstract: The present disclosure provides a method that includes coating an edge portion of a wafer by a first chemical solution including a chemical mixture of an acid-labile group, a solubility control unit and a thermal acid generator; curing the first chemical solution to form a first protecting layer on the edge portion of the wafer; coating a resist layer on a front surface of the wafer; removing the first protecting layer by a first removing solution; and performing an exposing process to the resist layer.
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公开(公告)号：US20190064669A1
公开(公告)日：2019-02-28
申请号：US16126033
申请日：2018-09-10
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： An-Ren Zi , Joy Cheng , Ching-Yu Chang , Chin-Hsiang Lin
Abstract: The present disclosure provides a method that includes coating an edge portion of a wafer by a first chemical solution including a chemical mixture of an acid-labile group, a solubility control unit and a thermal acid generator; curing the first chemical solution to form a first protecting layer on the edge portion of the wafer; coating a resist layer on a front surface of the wafer; removing the first protecting layer by a first removing solution; and performing an exposing process to the resist layer.
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公开(公告)号：US20240377731A1
公开(公告)日：2024-11-14
申请号：US18779265
申请日：2024-07-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： An-Ren Zi , Joy Cheng , Ching-Yu Chang , Chin-Hsiang Lin
Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a metal-containing chemical; performing an exposing process to the photoresist layer; and performing a first developing process to the photoresist layer using a first developer, thereby forming a patterned resist layer, wherein the first developer includes a first solvent and a chemical additive to remove metal residuals generated from the metal-containing chemical.
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