Abstract:
The present invention provides film forming equipment that can reduce the space necessary for coating. The film forming equipment has an object conveyor for moving an object (50); a spray gun conveyor (41) for moving a spray gun (30) that sprays a coating material; and a controller for controlling operations of the object conveyor (41), the spray gun (30), and the spray gun conveyor, wherein the controller moves the object (50) in a specific direction while spraying a coating material from the spray gun (30) and reciprocates the object (50) so that partial layer coating can be sequentially conducted, and while coating the object (50), the controller shifts the object (50) and the spray gun (30) while keeping the relative positions of the object and the spray gun to each other constant.
Abstract:
A multi-color small amount painting system of the present invention stores small unit amounts of paint having a variety of paint colors and may selectively feed desired color paint to a painter of a painting robot or the like. The painting system stores the paint having a large number of paint colors in a stock unit in the form of paint cartridges. The paint cartridge of the paint color selected is picked up from the stock unit and carried by a carrier and is loaded on the painting robot or an automatic painting device. Subsequently, the paint within the paint cartridge loaded is fed to the painter of the painting robot or the automatic painting device by a paint feeding mechanism. In addition, the system ensure an advantage that the painting system is high in efficiency of painting work including the exchange of colors and is small in size as a whole.
Abstract:
A triple-layer electrode structure or a multilayer interconnecting structure of a semiconductor device comprising a contact (a lower conductive) layer of aluminum or its alloy which comes into contact with a silicon substrate, a barrier layer of refractory metal nitride (e.g. titanium nitride) and refractory metal (e.g., tungsten), and a (upper) conductive layer of aluminum or its alloy. The TiN-W barrier layer prevents overdissolution of silicon into aluminum in spite of heat-treatment at a relatively elevated temperature. The barrier layer is formed by sintering a mixture of refractory metal nitride powder and refractory metal powder to form a target which is sputter deposited on the contact layer in an atomsphere excluding gaseous nitrogen.
Abstract:
In a generator system, a load is alternatively connected to or disconnected from a generator to make it easy for the generator to get the load to start.