公开(公告)号：US20090053835A1

公开(公告)日：2009-02-26

申请号：US12258196

申请日：2008-10-24

Applicant: Tsuyoshi MORIYA ,  Hiroyuki Nakayama

Inventor： Tsuyoshi MORIYA ,  Hiroyuki Nakayama

IPC: H01L21/66 ,  C23F1/00

CPC classification number: H01J37/32935 ,  B08B9/08 ,  G01N15/0272 ,  G01N15/06 ,  G01N2015/0693 ,  Y10T428/30 ,  Y10T428/315 ,  Y10T428/8305

Abstract: A semiconductor manufacturing apparatus includes a processing chamber for performing a manufacturing processing on a wafer. A gas supply line for introducing a purge gas is connected to an upper portion of the processing chamber, a valve being installed on the gas supply line. A rough pumping line with a valve is connected to a lower portion of the processing chamber. Installed on the rough pumping line are a dry pump for exhausting a gas in the processing chamber and a particle monitoring unit for monitoring particles between the valve and the dry pump. In the semiconductor manufacturing apparatus, after the valve is opened, the purge gas is supplied to apply physical vibration due to shock wave in the processing chamber so that deposits are detached therefrom to be monitored as particles.

Abstract translation: 半导体制造装置包括用于在晶片上进行制造处理的处理室。 用于引入吹扫气体的气体供给管线连接到处理室的上部，安装在气体供给管线上的阀。 具有阀的粗抽泵线连接到处理室的下部。 安装在粗抽油管上的是用于排出处理室中的气体的干燥泵和用于监测阀和干泵之间的颗粒的颗粒监测单元。 在半导体制造装置中，在阀打开之后，供给吹扫气体以在处理室中施加由冲击波引起的物理振动，从而将沉积物从其中分离出来，作为颗粒被监测。

公开(公告)号：US20070193062A1

公开(公告)日：2007-08-23

申请号：US11671821

申请日：2007-02-06

Applicant: Tsuyoshi MORIYA ,  Kazuya Nagaseki

Inventor： Tsuyoshi MORIYA ,  Kazuya Nagaseki

IPC: F26B3/00

CPC classification number: H01L21/67028 ,  H01L21/67017 ,  H01L21/68707

Abstract: A substrate processing method for a substrate processing system comprising at least a substrate processing apparatus that subjects a substrate to processing, and a substrate transferring apparatus having a transferring device that transfers the substrate, which enables the yield to be increased without bringing about a decrease in the throughput. The substrate processing method comprises a jetting step of jetting a high-temperature gas onto at least one of the transferring device and the substrate transferred by the transferring device.

Abstract translation: 一种用于基板处理系统的基板处理方法，其至少包括使基板进行处理的基板处理装置，以及具有转印基板的转印装置的基板转印装置，其能够提高成品率而不会降低 吞吐量。 基板处理方法包括将高温气体喷射到转印装置和由转印装置转印的基板中的至少一个上的喷射工序。

公开(公告)号：US20070144670A1

公开(公告)日：2007-06-28

申请号：US11680315

申请日：2007-02-28

Applicant: Tsuyoshi MORIYA ,  Hiroyuki NAKAYAMA

Inventor： Tsuyoshi MORIYA ,  Hiroyuki NAKAYAMA

IPC: G06F19/00 ,  H01L21/306

CPC classification number: H01J37/32935 ,  B08B9/08 ,  G01N15/0272 ,  G01N15/06 ,  G01N2015/0693 ,  Y10T428/30 ,  Y10T428/315 ,  Y10T428/8305

Abstract: A semiconductor manufacturing apparatus includes a processing chamber for performing a manufacturing processing on a wafer. A gas supply line for introducing a purge gas is connected to an upper portion of the processing chamber, a valve being installed on the gas supply line. A rough pumping line with a valve a is connected to a lower portion of the processing chamber. Installed on the rough pumping line are a dry pump for exhausting a gas in the processing chamber and a particle monitoring unit for monitoring particles between the valve a and the dry pump. In the semiconductor manufacturing apparatus, after the valve is opened, the purge gas is supplied to apply physical vibration due to shock wave in the processing chamber 100 so that deposits are detached therefrom to be monitored as particles.

Abstract translation: 半导体制造装置包括用于在晶片上进行制造处理的处理室。 用于引入吹扫气体的气体供给管线连接到处理室的上部，安装在气体供给管线上的阀。 具有阀门a的粗抽油管线连接到处理室的下部。 安装在粗泵送管线上的是用于排出处理室中的气体的干燥泵和用于监测阀a和干泵之间的颗粒的颗粒监测单元。 在半导体制造装置中，在阀打开之后，供给吹扫气体，以在处理室100中施加由冲击波引起的物理振动，从而将沉积物从其中分离出来，作为颗粒被监视。

公开(公告)号：US20120037314A1

公开(公告)日：2012-02-16

申请号：US13278765

申请日：2011-10-21

Applicant: Shosuke ENDOH ,  Tsuyoshi MORIYA ,  Akitaka SHIMIZU

Inventor： Shosuke ENDOH ,  Tsuyoshi MORIYA ,  Akitaka SHIMIZU

IPC: H01L21/00 ,  C23F1/00

CPC classification number: H01J37/32477

Abstract: A substrate processing apparatus that enables abnormal electrical discharges and metal contamination to be prevented from occurring. A processing chamber is configured to house and carry out predetermined plasma processing on a substrate. A lower electrode is disposed on a bottom portion of the processing chamber and has the substrate mounted thereon. An upper electrode is disposed in a ceiling portion of the processing chamber. A side wall component covering a side wall of the processing chamber faces onto a processing space between the upper electrode and the lower electrode. The side wall component has at least one electrode layer to which a DC voltage is applied. An insulating portion made of an insulating material is present at least between the electrode layer and the processing space and covers the electrode layer. The insulating portion is formed by thermally spraying the insulating material.

Abstract translation: 能够防止发生异常放电和金属污染的基板处理装置。 处理室配置成容纳并执行衬底上的预定等离子体处理。 下电极设置在处理室的底部，并且其上安装有基板。 上电极设置在处理室的顶部。 覆盖处理室的侧壁的侧壁部件面向上电极和下电极之间的处理空间。 侧壁部件具有至少一个施加了直流电压的电极层。 至少在电极层和处理空间之间存在由绝缘材料制成的绝缘部分并且覆盖电极层。 绝缘部分通过热喷涂绝缘材料形成。

公开(公告)号：US20110126853A1

公开(公告)日：2011-06-02

申请号：US12960064

申请日：2010-12-03

Applicant: Tsuyoshi MORIYA ,  Hiroyuki NAKAYAMA ,  Hiroshi NAGAIKE

Inventor： Tsuyoshi MORIYA ,  Hiroyuki NAKAYAMA ,  Hiroshi NAGAIKE

IPC: B08B6/00

CPC classification number: H01J37/32862 ,  H01J37/3244 ,  H01J37/32449

Abstract: A plasma processing apparatus includes a processing chamber, in which a wafer W is plasma-processed, and a CPU controlling an operation of each component. A processing gas is introduced into the processing chamber under a first condition defined by a flow rate and a molecular weight of the processing gas, specifically based on a magnitude of a product A1 (=Q1×m1) of the flow rate Q1 and the molecular weight m1 of the processing gas, and a surface of the wafer W is physically or chemically etched. And then, a pre-purge gas which may be identical to or different from the processing gas is introduced into the processing chamber through a shower head under a second condition derived from the first condition.

Abstract translation: 等离子体处理装置包括其中晶片W被等离子体处理的处理室和控制每个部件的操作的CPU。 在处理气体的流速和分子量限定的第一条件下，特别是基于流量Q1的乘积A1（= Q1×m1）的大小和分子量 处理气体的重量m1，并且物理或化学蚀刻晶片W的表面。 然后，可以在处理气体中相同或不同的预净化气体在从第一条件导出的第二条件下通过喷淋头引入处理室。

公开(公告)号：US20100238446A1

公开(公告)日：2010-09-23

申请号：US12724034

申请日：2010-03-15

Applicant: Osamu AKIYAMA ,  Tsuyoshi MORIYA ,  Jun YAMAWAKU

Inventor： Osamu AKIYAMA ,  Tsuyoshi MORIYA ,  Jun YAMAWAKU

IPC: G01N21/01 ,  G01N21/59

CPC classification number: G01N21/05 ,  G01N21/031 ,  G01N21/09 ,  G01N21/15 ,  G01N2021/8578

Abstract: A gas flow cell for an optical gas-analysis system encompasses a T-shaped configuration, the configuration is implemented by a single sample-gas introduction port provided at a location of a substantial center in a long axis direction, and the single sample-gas introduction port is aligned along a direction orthogonal to the long axis direction.

Abstract translation: 用于光学气体分析系统的气体流通池包括T形构造，该构造由设置在长轴方向的大致中心的位置处的单个样品气体导入口和单个样品气体 引入口沿着与长轴方向正交的方向排列。

公开(公告)号：US20100154995A1

公开(公告)日：2010-06-24

申请号：US12718699

申请日：2010-03-05

Applicant: Tomoyuki KUDO ,  Jun OZAWA ,  Hiroshi NAKAMURA ,  Kazunori KAZAMA ,  Tsuyoshi MORIYA ,  Hiroyuki NAKAYAMA ,  Hiroshi NAGAIKE

Inventor： Tomoyuki KUDO ,  Jun OZAWA ,  Hiroshi NAKAMURA ,  Kazunori KAZAMA ,  Tsuyoshi MORIYA ,  Hiroyuki NAKAYAMA ,  Hiroshi NAGAIKE

IPC: H01L21/306 ,  B05C11/00 ,  G05D7/06

CPC classification number: H01L21/67201 ,  H01L21/67017 ,  H01L21/67253 ,  H01L21/67748 ,  Y10S414/135 ,  Y10S414/139

Abstract: A computer readable storage medium storing a program for performing an operation method of a substrate processing apparatus is provided. The operation method includes the steps of introducing a nonreactive gas into the vacuum preparation chamber before the gate valve is opened while the substrate is transferred between the vacuum preparation chamber of the vacuum processing unit and the transfer unit, stopping introducing the nonreactive gas when an inner pressure of the vacuum preparation chamber becomes same as an atmospheric pressure, starting an evacuation process of the corrosive gas in the vacuum preparation chamber and then opening to atmosphere performed by letting the vacuum preparation chamber communicate with an atmosphere, and opening the gate valve after the step of opening to atmosphere.

Abstract translation: 提供一种存储用于执行基板处理装置的操作方法的程序的计算机可读存储介质。 操作方法包括以下步骤：在基板在真空处理单元的真空处理室和转印单元的真空准备室之间转移时，在闸阀打开之前将非反应性气体引入真空准备室中，当内部 真空制备室的压力与大气压力相同，开始真空制备室中的腐蚀性气体的抽空处理，然后通过使真空制备室与大气连通而进入大气，并在真空准备室之后打开闸阀 向大气开放的一步。

公开(公告)号：US20090134121A1

公开(公告)日：2009-05-28

申请号：US12359691

申请日：2009-01-26

Applicant: Tsuyoshi MORIYA ,  Hiroyuki Nakayama

Inventor： Tsuyoshi MORIYA ,  Hiroyuki Nakayama

IPC: H05H1/24 ,  C23C14/34 ,  B44C1/22 ,  C23C16/44

CPC classification number: H01J37/32431 ,  H01J2237/022

Abstract: There is provided a plasma processing apparatus including a plasma generating unit for generating a plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed. The plasma processing apparatus further includes a particle moving unit for electrostatically driving particles in a region above the substrate to be removed out of the region above the substrate in the processing chamber while the processing on the substrate is performed by using the plasma. In addition, there is provided a plasma processing method of a plasma processing apparatus including the steps of generating plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed; and performing the processing on the substrate by the plasma.

Abstract translation: 提供了一种等离子体处理装置，其包括等离子体产生单元，用于在处理室中产生等离子体，其中对作为待处理对象的基板进行设定处理。 等离子体处理装置还包括一个粒子移动单元，用于在通过使用等离子体进行基板上的处理的同时，在处理室中的基板上方的区域中，将基板上方的区域中的颗粒静电驱动。 此外，提供了一种等离子体处理装置的等离子体处理方法，其包括以下步骤：在对作为被处理对象的基板进行设定处理的处理室中产生等离子体; 并通过等离子体对衬底进行处理。

公开(公告)号：US20080237182A1

公开(公告)日：2008-10-02

申请号：US12042661

申请日：2008-03-05

Applicant: Jun YAMAWAKU ,  Tsuyoshi MORIYA

Inventor： Jun YAMAWAKU ,  Tsuyoshi MORIYA

IPC: C23F1/00

CPC classification number: H01L21/6831 ,  H01J37/3244 ,  H01J37/32642 ,  H01L21/67069 ,  H01L21/67109

Abstract: A substrate processing apparatus that can improve the uniformity of plasma processing carried out on a wafer. The wafer is housed in a chamber of the substrate processing apparatus and subjected to plasma processing using plasma produced in the processing chamber. A temperature control mechanism jets a high-temperature gas toward at least part of an annular focus ring facing the plasma.

Abstract translation: 一种能够提高在晶片上进行的等离子体处理的均匀性的基板处理装置。 将晶片容纳在基板处理装置的室中，并使用在处理室中产生的等离子体处理等离子体处理。 温度控制机构朝着面向等离子体的环形聚焦环的至少一部分喷射高温气体。

公开(公告)号：US20080236634A1

公开(公告)日：2008-10-02

申请号：US12057807

申请日：2008-03-28

Applicant: Tsuyoshi MORIYA ,  Tadashi ONISHI ,  Ryo NONAKA ,  Eiichi NISHIMURA

Inventor： Tsuyoshi MORIYA ,  Tadashi ONISHI ,  Ryo NONAKA ,  Eiichi NISHIMURA

IPC: B08B3/02 ,  B08B5/02 ,  B08B7/02 ,  B08B13/00

CPC classification number: H01L21/67051 ,  H01L21/6708

Abstract: A substrate processing system that enables foreign matter adhered to a rear surface or a periphery of a substrate to be completely removed. A substrate processing apparatus performs predetermined processing on the substrate. A substrate cleaning apparatus cleans the substrate at least one of before and after the predetermined processing. A jetting apparatus jets a cleaning substance in two phases of a gas phase and a liquid phase and a high-temperature gas towards the rear surface or the periphery of the substrate.

Abstract translation: 能够完全除去附着在基板的背面或周围的异物的基板处理系统。 基板处理装置对基板进行规定的处理。 基板清洁装置在预定处理之前和之后清洁基板。 喷射装置将气相和液相以及高温气体的两相中的清洗物质喷射到基板的后表面或周边。