公开(公告)号：US10026827B2

公开(公告)日：2018-07-17

申请号：US15095154

申请日：2016-04-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Zhen Wu ,  Chiu-Hsien Yeh ,  Po-Wen Su ,  Kuan-Ying Lai

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/304 ,  H01L21/768 ,  H01L21/28

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a first organic layer on the substrate; patterning the first organic layer to form an opening; forming a second organic layer in the opening; and removing the first organic layer to form a patterned second organic layer on the substrate.

公开(公告)号：US20170309520A1

公开(公告)日：2017-10-26

申请号：US15158608

申请日：2016-05-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： En-Chiuan Liou ,  Chih-Wei Yang ,  Kuan-Ying Lai

IPC: H01L21/8234 ,  H01L29/66 ,  H01L29/423 ,  H01L29/78 ,  H01L27/088

CPC classification number: H01L21/823456 ,  H01L21/82345 ,  H01L27/088 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/78

Abstract: A method for fabricating semiconductor device is disclosed. First, a substrate is provided, and a first metal gate and a second metal gate are formed on the substrate, in which the first metal gate includes a first work function metal layer, the second metal gate includes a second work function metal layer, the first metal gate and the second metal gate include different size, and the first work function metal layer and the second work function metal layer include different thickness.