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    NON-VOLATILE MEMORY WITH A SINGLE TRANSISTOR AND RESISTIVE MEMORY ELEMENT
    12.
    发明申请
    NON-VOLATILE MEMORY WITH A SINGLE TRANSISTOR AND RESISTIVE MEMORY ELEMENT 有权
    具有单个晶体管和电阻存储元件的非易失性存储器

    公开(公告)号：US20040160817A1

    公开(公告)日：2004-08-19

    申请号：US10249848

    申请日：2003-05-12

    Applicant: UNITY SEMICONDUCTOR CORPORATION

    Inventor： Darrell Rinerson ,  Christophe J. Chevallier ,  Steven W. Longcor ,  Wayne Kinney ,  Edmond R. Ward ,  Steve Kuo-Ren Hsia

    IPC: G11C011/14

    CPC classification number: G11C13/0007 ,  G11C11/5685 ,  G11C2213/31 ,  G11C2213/79 ,  H01L27/24

    Abstract: Non-volatile memory cell with a single semiconductor device per memory cell. The present invention generally allows for a plurality of memory cells to be formed on a semiconductor substrate that supports a semiconductor device. A multi-resistive state material layer that changes its resistive state between a low resistive state and a high resistive state upon application of a voltage pulse is formed above the substrate, generally at a very high temperature. While the layers fabricated between the substrate and the multi-resistive state material use materials that can withstand high temperature processing, the layers fabricated above the multi-resistive state material do not need to withstand high temperature processing.

    Abstract translation: 每个存储单元具有单个半导体器件的非易失性存储器单元。 本发明通常允许在支撑半导体器件的半导体衬底上形成多个存储单元。 通常在非常高的温度下，在衬底上方形成在施加电压脉冲时改变其电阻状态在低电阻状态和高电阻状态之间的多电阻状态材料层。 虽然在衬底和多电阻状态材料之间制造的层使用可承受高温处理的材料，但是在多电阻状态材料之上制造的层不需要经受高温处理。

    CROSS POINT MEMORY ARRAY USING DISTINCT VOLTAGES
    13.
    发明申请
    CROSS POINT MEMORY ARRAY USING DISTINCT VOLTAGES 有权
    使用差分电压的交点点存储器阵列

    公开(公告)号：US20040160808A1

    公开(公告)日：2004-08-19

    申请号：US10330964

    申请日：2002-12-26

    Applicant: Unity Semiconductor Corporation

    Inventor： Darrell Rinerson ,  Steven W. Longcor ,  Christophe J. Chevallier ,  Edmond R. Ward ,  Wayne Kinney ,  Steve Kuo-Ren Hsia

    IPC: G11C011/00

    CPC classification number: G11C13/0007 ,  G11C11/5685 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/31 ,  G11C2213/77

    Abstract: Cross point memory array using distinct voltages. The invention is a cross point memory array that applies a first select voltage on one conductive array line, a second select voltage on a second conductive array line, the two conductive array lines uniquely defining a single memory plug. The magnitude of the select voltages depends upon whether a read operation or a write operation is occurring. Additionally, an unselect voltage is applied to the unselected conductive array lines. The unselect voltage can be applied before, after or during the selection process. The unselect voltage is approximately equal to the average of the first select voltage and the second select voltage.

    Abstract translation: 交叉点存储器阵列使用不同的电压。 本发明是一种交叉点存储器阵列，其在一个导电阵列线上施加第一选择电压，在第二导电阵列线上施加第二选择电压，所述两个导电阵列线唯一地限定单个存储器插头。 选择电压的大小取决于是否发生读取操作或写入操作。 此外，未选择的电压被施加到未选择的导电阵列线。 可以在选择过程之前，之后或期间施加取消选择电压。 取消选择电压近似等于第一选择电压和第二选择电压的平均值。

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