公开(公告)号：US20220392850A1

公开(公告)日：2022-12-08

申请号：US17369936

申请日：2021-07-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Da-Jun Lin ,  Chin-Chia Yang ,  Tai-Cheng Hou ,  Fu-Yu Tsai ,  Bin-Siang Tsai

IPC: H01L23/00 ,  H01L23/522 ,  H01L29/417 ,  H01L21/02

Abstract: A warpage-reducing semiconductor structure includes a wafer. The wafer includes a front side and a back side. Numerous semiconductor elements are disposed at the front side. A silicon oxide layer is disposed at the back side. A UV-transparent silicon nitride layer covers and contacts the silicon oxide layer. The refractive index of the UV-transparent silicon nitride layer is between 1.55 and 2.10.

公开(公告)号：US11094900B2

公开(公告)日：2021-08-17

申请号：US16241997

申请日：2019-01-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Da-Jun Lin ,  Bin-Siang Tsai ,  Chin-Chia Yang

IPC: H01L51/05 ,  H01L51/00 ,  H01L51/10

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first metal interconnection in a first inter-metal dielectric (IMD) layer; performing a treatment process to rough a top surface of the first metal interconnection; and forming a carbon nanotube (CNT) junction on the first metal interconnection. Preferably, the treatment process further includes forming protrusions on the top surface of the first metal interconnection, in which the protrusions and the first metal interconnection comprise same material.

公开(公告)号：US20200185629A1

公开(公告)日：2020-06-11

申请号：US16241997

申请日：2019-01-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Da-Jun Lin ,  Bin-Siang Tsai ,  Chin-Chia Yang

IPC: H01L51/05 ,  H01L51/00 ,  H01L51/10

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first metal interconnection in a first inter-metal dielectric (IMD) layer; performing a treatment process to rough a top surface of the first metal interconnection; and forming a carbon nanotube (CNT) junction on the first metal interconnection. Preferably, the treatment process further includes forming protrusions on the top surface of the first metal interconnection, in which the protrusions and the first metal interconnection comprise same material.