公开(公告)号：US20040159869A1

公开(公告)日：2004-08-19

申请号：US10765406

申请日：2004-01-26

Applicant: Unity Semiconductor Corporation

Inventor： Darrell Rinerson ,  Steven W. Longcor ,  Steve Kuo-Ren Hsia ,  Wayne Kinney ,  Edmond R. Ward ,  Christophe J. Chevallier

IPC: H01L029/94

CPC classification number: H01L27/2436 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/003 ,  G11C2213/31 ,  G11C2213/72 ,  G11C2213/74 ,  G11C2213/76 ,  G11C2213/77 ,  H01L27/2418 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/147 ,  H01L45/165

Abstract: A memory array with components that can withstand high temperature fabrication is provided. Some memory materials require high temperature process steps in order to achieve desired properties. During fabrication, a memory material is deposited on structures that may include metal lines and barrier layers. Such structures are then exposed to the high temperature processing steps and should be resistant to such temperatures.

Abstract translation: 提供了具有可承受高温制造的部件的存储器阵列。 一些记忆材料需要高温工艺步骤才能达到所需的性能。 在制造期间，将记忆材料沉积在可以包括金属线和阻挡层的结构上。 然后将这种结构暴露于高温加工步骤，并且应该能够抵抗这种温度。