Abstract:
Systems and methods for vertically integrating semiconductor devices are described. In one embodiment, a method comprises providing an interposer, aligning and bonding a plurality of die to a first surface of the interposer, aligning and bonding a backplate to the plurality of die, and reducing at least one portion of the interposer to create a reconstituted wafer. In another embodiment, an apparatus comprises an interposer operable to receive at least one donor semiconductor device disposed on a first surface of the interposer and aligned therewith, and at least one host semiconductor device disposed on a second surface of the interposer and aligned therewith; where the interposer allows the at least one donor and host semiconductor devices to become vertically integrated.
Abstract:
Apparatuses and methods for cleaning a surface comprising contaminate particles are provided. In one respect, plasma and/or a shockwave may be created in a fluid flowing through a nozzle. The nozzle, coupled to a laser source and a fluid feed may be configured to deliver the generated plasma and/or shockwave to the surface.
Abstract:
Methods for fabricating two metal gate stacks for complementary metal oxide semiconductor (CMOS) devices are provided. A common layer, such as a metal layer, a metal alloy layer, or a metal nitride layer may be deposited on to a gate dielectric. A first mask layer may be deposited and patterned over an active region, exposing a portion of the common layer. A first ion may be deposited in the common layer forming a first mask layer. Similarly, a second mask layer may be deposited and patterned over the other active region and the first metal layer, and another portion of the common layer is exposed. A second ion may be deposited in the common layer, forming a second mask layer.
Abstract:
The present invention provides an apparatus and a method for an ultraviolet cleaning tool. The cleaning tool includes ultraviolet source spaced apart from a surface having contaminant particles. The ultraviolet source can create ozone between the surface and the ultraviolet source which breaks the chemical bonds between particles and the surface. The apparatus includes a gas feed which introduces a gas to aid the chemical bond. Additionally, the gas feed can introduce a gas to remove the particles from the surface.
Abstract:
An RF sensor having a novel current sensing probe and a voltage sensing probe to measure voltage and current. The current sensor is disposed in a transmission line to link all of the flux generated by the flowing current in order to obtain an accurate measurement. The voltage sensor is a flat plate which operates as a capacitive plate to sense voltage on a center conductor of the transmission line, in which the measured voltage is obtained across a resistance leg of a R-C differentiator circuit formed by the characteristic impedance of a connecting transmission line and a capacitance of the plate, which is positioned proximal to the center conductor.
Abstract:
The present invention discloses a saturable reactor and a method for decoupling the interwinding capacitance from the frequency limitations of the reactor so that the equivalent electrical circuit of the saturable reactor comprises a variable inductor. The saturable reactor comprises a plurality of physically symmetrical magnetic cores with closed loop magnetic paths and a novel method of wiring a control winding and a RF winding. The present invention additionally discloses a matching network and method for matching the impedances of a RF generator to a load. The matching network comprises a matching transformer and a saturable reactor.
Abstract:
A tri-polar electrostatic chuck has both positive and negative electrodes housed on a non-polarized base housing. A non-polarized guard ring surrounds the outer periphery of the chuck and enclosing the electrodes. A wafer is placed atop the chuck with its back-side cooled by a cooling gas that is piped up through the chuck. The edge of the wafer is made to reside over the guard ring, instead of over one of the polarized electrodes. The proximity of the non-polarized guard ring to the wafer edge helps to reduce the amount of plasma leakage around the edge of the wafer, resulting in less breakdown of the dielectric coating of the chuck. The positioning of the electrodes also provides for a uniform impedance across the processing surface of the wafer.
Abstract:
A RF sensor for monitoring voltage, current and phase angle of a RF signal being coupled to a plasma reactor. Outputs from the sensor are used to calculate various properties of the plasma. These values are then utilized to characterize the process and/or used to provide feedback for in-situ control of an ongoing plasma process.
Abstract:
A building houses a semiconductor manufacturing facility, which is circular in shape and is of a multi-story structure. A silo is located at the center for use in storing and transferring wafers to clean rooms disposed radially around the silo at each floor. Human access is not permitted in the silo and in the clean rooms in order to prevent contamination of the wafers. Due to the modularity of the clean room structures, clean rooms can be reconfigured easily without significant impact on the on-going manufacturing operation. The modularity also permits portions of the facility to be deactivated when not needed.
Abstract:
A quartz tube carousel device for vertically storing quartz tubes used in semiconductor fabrication. The carousel stores the quartz tubes in an upright position to conserve floor space and, further, provides for 360 degree rotation for ease of access. Laminar air flow is provided through openings in the device for purging the tubes. Optional features allow for different size, shape and number of tubes to be stored, as well as forced gas purging of the quartz tubes.