SYSTEMS AND METHODS FOR VERTICALLY INTEGRATING SEMICONDUCTOR DEVICES
    11.
    发明申请
    SYSTEMS AND METHODS FOR VERTICALLY INTEGRATING SEMICONDUCTOR DEVICES 失效
    用于垂直集成半导体器件的系统和方法

    公开(公告)号:US20090017580A1

    公开(公告)日:2009-01-15

    申请号:US11776069

    申请日:2007-07-11

    Applicant: Larry Smith

    Inventor: Larry Smith

    Abstract: Systems and methods for vertically integrating semiconductor devices are described. In one embodiment, a method comprises providing an interposer, aligning and bonding a plurality of die to a first surface of the interposer, aligning and bonding a backplate to the plurality of die, and reducing at least one portion of the interposer to create a reconstituted wafer. In another embodiment, an apparatus comprises an interposer operable to receive at least one donor semiconductor device disposed on a first surface of the interposer and aligned therewith, and at least one host semiconductor device disposed on a second surface of the interposer and aligned therewith; where the interposer allows the at least one donor and host semiconductor devices to become vertically integrated.

    Abstract translation: 描述了用于垂直集成半导体器件的系统和方法。 在一个实施例中,一种方法包括提供插入器,将多个管芯对准并将其连接到插入器的第一表面,将背板对齐并粘接到多个管芯,以及减少至少一部分插入件以产生重构 晶圆。 在另一个实施例中,一种装置包括插入器,其可操作以接收设置在插入器的第一表面上并与其对准的至少一个施主半导体器件;以及至少一个主体半导体器件,其布置在插入器的第二表面上并与之对齐; 其中插入器允许至少一个施主和主机半导体器件变为垂直集成。

    Laser Nozzle Methods And Apparatus For Surface Cleaning
    12.
    发明申请
    Laser Nozzle Methods And Apparatus For Surface Cleaning 失效
    激光喷嘴方法和表面清洁设备

    公开(公告)号:US20070163715A1

    公开(公告)日:2007-07-19

    申请号:US11532700

    申请日:2006-09-18

    Applicant: Abbas Rastegar

    Inventor: Abbas Rastegar

    Abstract: Apparatuses and methods for cleaning a surface comprising contaminate particles are provided. In one respect, plasma and/or a shockwave may be created in a fluid flowing through a nozzle. The nozzle, coupled to a laser source and a fluid feed may be configured to deliver the generated plasma and/or shockwave to the surface.

    Abstract translation: 提供了用于清洁包含污染颗粒的表面的装置和方法。 在一个方面,可以在流过喷嘴的流体中产生等离子体和/或冲击波。 耦合到激光源和流体进料的喷嘴可以被配置为将产生的等离子体和/或冲击波传送到表面。

    Dual Metal Gate and Method of Manufacture
    13.
    发明申请
    Dual Metal Gate and Method of Manufacture 审中-公开
    双金属门和制造方法

    公开(公告)号:US20070059874A1

    公开(公告)日:2007-03-15

    申请号:US11456054

    申请日:2006-07-06

    CPC classification number: H01L21/823842

    Abstract: Methods for fabricating two metal gate stacks for complementary metal oxide semiconductor (CMOS) devices are provided. A common layer, such as a metal layer, a metal alloy layer, or a metal nitride layer may be deposited on to a gate dielectric. A first mask layer may be deposited and patterned over an active region, exposing a portion of the common layer. A first ion may be deposited in the common layer forming a first mask layer. Similarly, a second mask layer may be deposited and patterned over the other active region and the first metal layer, and another portion of the common layer is exposed. A second ion may be deposited in the common layer, forming a second mask layer.

    Abstract translation: 提供了用于制造用于互补金属氧化物半导体(CMOS)器件的两个金属栅极叠层的方法。 诸如金属层,金属合金层或金属氮化物层的公共层可以沉积到栅极电介质上。 可以在有源区上沉积和图案化第一掩模层,暴露公共层的一部分。 可以在形成第一掩模层的公共层中沉积第一离子。 类似地,第二掩模层可以在另一个有源区和第一金属层上沉积和图案化,并且公共层的另一部分被暴露。 可以在公共层中沉积第二离子,形成第二掩模层。

    Method and apparatus for an in-situ ultraviolet cleaning tool
    14.
    发明申请
    Method and apparatus for an in-situ ultraviolet cleaning tool 有权
    用于原位紫外线清洁工具的方法和设备

    公开(公告)号:US20060207629A1

    公开(公告)日:2006-09-21

    申请号:US11301643

    申请日:2005-12-13

    Abstract: The present invention provides an apparatus and a method for an ultraviolet cleaning tool. The cleaning tool includes ultraviolet source spaced apart from a surface having contaminant particles. The ultraviolet source can create ozone between the surface and the ultraviolet source which breaks the chemical bonds between particles and the surface. The apparatus includes a gas feed which introduces a gas to aid the chemical bond. Additionally, the gas feed can introduce a gas to remove the particles from the surface.

    Abstract translation: 本发明提供一种紫外线清洁工具的装置和方法。 清洁工具包括与具有污染物颗粒的表面间隔开的紫外线源。 紫外线源可以在表面和紫外线源之间产生臭氧,从而破坏了颗粒与表面之间的化学键。 该装置包括引入气体以辅助化学键的气体进料。 此外,气体进料可以引入气体以从表面除去颗粒。

    RF current sensor
    15.
    发明授权
    RF current sensor 失效
    射频电流传感器

    公开(公告)号:US5834931A

    公开(公告)日:1998-11-10

    申请号:US742393

    申请日:1996-10-31

    CPC classification number: G01R1/06772 G01R1/24 G01R15/142 G01R15/16 G01R15/18

    Abstract: An RF sensor having a novel current sensing probe and a voltage sensing probe to measure voltage and current. The current sensor is disposed in a transmission line to link all of the flux generated by the flowing current in order to obtain an accurate measurement. The voltage sensor is a flat plate which operates as a capacitive plate to sense voltage on a center conductor of the transmission line, in which the measured voltage is obtained across a resistance leg of a R-C differentiator circuit formed by the characteristic impedance of a connecting transmission line and a capacitance of the plate, which is positioned proximal to the center conductor.

    Abstract translation: RF传感器具有新颖的电流感测探针和用于测量电压和电流的电压感测探头。 电流传感器设置在传输线中以链接由流动电流产生的所有磁通,以获得准确的测量。 电压传感器是平板,其作为电容板工作,以感测传输线中心导体上的电压,其中测得的电压是通过连接传输特性阻抗形成的RC微分电路电阻腿 线和电容,其位于中心导体的近侧。

    Self isolating high frequency saturable reactor
    16.
    发明授权
    Self isolating high frequency saturable reactor 失效
    自隔离高频饱和电抗器

    公开(公告)号:US5770982A

    公开(公告)日:1998-06-23

    申请号:US739340

    申请日:1996-10-29

    Applicant: James A. Moore

    Inventor: James A. Moore

    CPC classification number: H01F21/08 H01F2029/143

    Abstract: The present invention discloses a saturable reactor and a method for decoupling the interwinding capacitance from the frequency limitations of the reactor so that the equivalent electrical circuit of the saturable reactor comprises a variable inductor. The saturable reactor comprises a plurality of physically symmetrical magnetic cores with closed loop magnetic paths and a novel method of wiring a control winding and a RF winding. The present invention additionally discloses a matching network and method for matching the impedances of a RF generator to a load. The matching network comprises a matching transformer and a saturable reactor.

    Abstract translation: 本发明公开了一种饱和电抗器和一种用于将绕组电容与电抗器的频率限制分离的方法,使得可饱和电抗器的等效电路包括可变电感器。 可饱和电抗器包括具有闭环磁路的多个物理对称磁芯,以及一种控制绕组和RF绕组接线的新方法。 本发明另外公开了一种用于将RF发生器的阻抗与负载相匹配的匹配网络和方法。 匹配网络包括匹配变压器和可饱和电抗器。

    Tri-polar electrostatic chuck
    17.
    发明授权
    Tri-polar electrostatic chuck 失效
    三极静电吸盘

    公开(公告)号:US5572398A

    公开(公告)日:1996-11-05

    申请号:US338306

    申请日:1994-11-14

    CPC classification number: H01L21/6831 H02N13/00

    Abstract: A tri-polar electrostatic chuck has both positive and negative electrodes housed on a non-polarized base housing. A non-polarized guard ring surrounds the outer periphery of the chuck and enclosing the electrodes. A wafer is placed atop the chuck with its back-side cooled by a cooling gas that is piped up through the chuck. The edge of the wafer is made to reside over the guard ring, instead of over one of the polarized electrodes. The proximity of the non-polarized guard ring to the wafer edge helps to reduce the amount of plasma leakage around the edge of the wafer, resulting in less breakdown of the dielectric coating of the chuck. The positioning of the electrodes also provides for a uniform impedance across the processing surface of the wafer.

    Abstract translation: 三极静电吸盘具有容纳在非极化基座壳体上的正极和负极。 非极化保护环围绕卡盘的外周并包围电极。 将晶片放置在卡盘顶部,其后侧通过被吸入卡盘的冷却气体冷却。 使晶片的边缘位于保护环上,而不是超过一个极化电极。 非极化保护环与晶片边缘的接近有助于减少围绕晶片边缘的等离子体泄漏量,导致卡盘的电介质涂层的击穿较少。 电极的定位也提供跨晶片处理表面的均匀阻抗。

    Integrated building and conveying structure for manufacturing under
ultraclean conditions
    19.
    发明授权
    Integrated building and conveying structure for manufacturing under ultraclean conditions 失效
    综合建筑物输送结构,用于超声波条件下的制造

    公开(公告)号:US5344365A

    公开(公告)日:1994-09-06

    申请号:US121621

    申请日:1993-09-14

    CPC classification number: H01L21/67712 H01L21/67727

    Abstract: A building houses a semiconductor manufacturing facility, which is circular in shape and is of a multi-story structure. A silo is located at the center for use in storing and transferring wafers to clean rooms disposed radially around the silo at each floor. Human access is not permitted in the silo and in the clean rooms in order to prevent contamination of the wafers. Due to the modularity of the clean room structures, clean rooms can be reconfigured easily without significant impact on the on-going manufacturing operation. The modularity also permits portions of the facility to be deactivated when not needed.

    Abstract translation: 一座建筑物是半圆形的制造设施,圆形的形状是多层结构。 仓库位于中心,用于将晶片存储和转移到在每个楼层处放置在筒仓周围的洁净室。 为了防止晶片的污染,在筒仓和洁净室中不允许人员进入。 由于洁净室结构的模块化,洁净室可以轻松重新配置,而不会对正在进行的制造操作产生重大影响。 模块化还允许设施的部分在不需要时被去激活。

    Quartz tube storage device
    20.
    发明授权
    Quartz tube storage device 失效
    石英管储存装置

    公开(公告)号:US5074421A

    公开(公告)日:1991-12-24

    申请号:US557259

    申请日:1990-07-24

    Inventor: David W. Coulter

    CPC classification number: F17C13/084 A47F5/02

    Abstract: A quartz tube carousel device for vertically storing quartz tubes used in semiconductor fabrication. The carousel stores the quartz tubes in an upright position to conserve floor space and, further, provides for 360 degree rotation for ease of access. Laminar air flow is provided through openings in the device for purging the tubes. Optional features allow for different size, shape and number of tubes to be stored, as well as forced gas purging of the quartz tubes.

    Abstract translation: 用于垂直存储用于半导体制造的石英管的石英管转盘装置。 旋转木马将石英管存放在直立位置,以节省地板空间,并进一步提供360度旋转以方便访问。 通过装置中的开口提供层流气流,用于清洗管。 可选功能允许存储不同尺寸,形状和数量的管,以及强制气体吹扫石英管。

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