Abstract:
The metal film of the present invention is a dense film of a single crystal that has very low surface roughness and very good crystal orientation because an arithmetic mean roughness of the surface is not larger than 2 nm and a (111) peak intensity of X-ray diffraction is not less than 20 times the sum of all other peaks. Also the metal oxide film of the present invention is a dense film that includes less oxygen defects and almost no voids therein because a content of a non-oxidized metal is not higher than 1 mole % of a metal component that constitutes the metal oxide and a packing density is 0.98 or higher.
Abstract:
An exposure apparatus includes an illumination optical system for illuminating a reflection mask that forms a pattern, by using light from a light source, wherein the illumination optical system includes a field stop that defines an illuminated area on the reflection mask, and has an opening, and an imaging system for introducing the light from the opening in the field stop into the reflection mask, the imaging system being a coaxial optical system, wherein a principal ray of the imaging system at a side of the reflection mask forming an inclination angle to a common axis of the coaxial optical system, the inclination angle being approximately equal to an angle between a principal ray of the projection optical system at the side of the reflection mask and a normal to a surface of the reflection mask.
Abstract:
Systems and methods are disclosed for reducing the influence of plasma generated debris on internal components of an EUV light source. In one aspect, an EUV metrology monitor is provided which may have a heater to heat an internal multi-layer filtering mirror to a temperature sufficient to remove deposited debris from the mirror. In another aspect, a device is disclosed for removing plasma generated debris from an EUV light source collector mirror having a different debris deposition rate at different zones on the collector mirror. In a particular aspect, an EUV collector mirror system may comprise a source of hydrogen to combine with Li debris to create LiH on a collector surface; and a sputtering system to sputter LiH from the collector surface. In another aspect, an apparatus for etching debris from a surface of a EUV light source collector mirror with a controlled plasma etch rate is disclosed.
Abstract:
An exposure apparatus includes an illumination optical system for illuminating a reflection mask that forms a pattern, by using light from a light source, wherein the illumination optical system includes a field stop that defines an illuminated area on the reflection mask, and has an opening, and an imaging system for introducing the light from the opening in the field stop into the reflection mask, the imaging system being a coaxial optical system, wherein a principal ray of the imaging system at a side of the reflection mask forming an inclination angle to a common axis of the coaxial optical system, the inclination angle being approximately equal to an angle between a principal ray of the projection optical system at the side of the reflection mask and a normal to a surface of the reflection mask.
Abstract:
An interferometer that uses plane mirrors at grazing incidence to create interference fringes in the extreme ultraviolet and x-ray portions of the spectrum. X-ray interferometry has historically been implemented through narrow band, diffractive systems that split the wavefront. By using two separate optical channels at grazing incidence to create interference from two areas of the wavefront, this system has broad band response and much higher efficiency. The interferometer has applications to telescopes, microscopes and spectrometers in the extreme ultraviolet and x-ray, and high contrast imaging in the visible.
Abstract:
A method for producing at least one capillary in a moldable material. The capillary has a large length in relation to its cross-section. A closed cavity is created within the moldable material and the material is stretched in at least one direction so that the cavity forms a substantially elliptical or parabolic capillary whose length is large in relationship to its cross-section. The material may be heated before stretching so that the cavity is expanded and shaped into an essentially spherical form. Suitable materials for the practice of the invention include glass, plastic, quartz, silicon, or metal.
Abstract:
An x-ray or neutron optic configuration includes a plurality of single crystal portions (25) formed with respective spaced x-ray or neutron reflection faces (21,22,23) formed at predetermined asymmetry angles to a Bragg diffraction plane in the respective crystal portion. The crystal portions are interconnected (25) to maintain a first and second (21,22) of these faces spaced apart for receipt of a sample (8) between them and to allow small adjustments of the relative angle of the faces about the normal to the plane of diffraction while maintaining the normals to the Bragg planes for the first and second faces (21,22) substantially in the plane of diffraction. First face (21) is arranged to be a monochromator and collimator with respect to x-rays or neutrons of appropriate wavelength incident reflected through the sample for receipt by the second face (22), which thereby serves as an analyzer face.
Abstract:
An X-ray lens includes a plurality of hollow cylinders of prescribed radius bored in a lens material piece having a phase lag coefficient appropriate for the wavelength of the X-rays to be focused such that the axes of the hollow cylinders are parallel and perpendicularly intersect a straight array axis.
Abstract:
An X-ray lens includes a plurality of hollow cylinders of prescribed radius bored in a lens material piece having a phase lag coefficient appropriate for the wavelength of the X-rays to be focused such that the axes of the hollow cylinders are parallel and perpendicularly intersect a straight array axis.
Abstract:
A 4-bounce dispersive crystal monochromator reduces the bandpass of synchrotron radiation to a 10-50 meV range without sacrificing angular acceptance. The monochromator includes the combination of an asymmetrical channel-cut single crystal of lower order reflection and a symmetrical channel-cut single crystal of higher order reflection in a nested geometric configuration. In the disclosed embodiment, a highly asymmetrically cut (.alpha.=20) outer silicon crystal (4 2 2) with low order reflection is combined with a symmetrically cut inner silicon crystal (10 6 4) with high order reflection to condition a hard x-ray component (5-30 keV) of synchrotron radiation down to the .mu.eV-neV level. Each of the crystals is coupled to the combination of a positioning inchworm and angle encoder via a respective rotation stage for accurate relative positioning of the crystals and precise energy tuning of the monochromator.