公开(公告)号：US20090134768A1

公开(公告)日：2009-05-28

申请号：US12325038

申请日：2008-11-28

Applicant: Young-Chul Choi ,  Jong-Hwan Park

Inventor： Young-Chul Choi ,  Jong-Hwan Park

IPC: H01J1/62 ,  H01J1/13 ,  H01J9/00

CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J2201/3195

Abstract: An electron emission device includes: a substrate; a cathode on the substrate; one or more electron emission regions electrically connected with the cathode; an insulation layer between the cathode and a gate electrode formed on the insulation layer; and a resistance layer electrically connected to the cathode and the one or more electron emission regions. Here, the resistance layer includes a boron nitride-based material.

Abstract translation: 电子发射装置包括：基板; 衬底上的阴极; 与阴极电连接的一个或多个电子发射区域; 阴极和形成在绝缘层上的栅电极之间的绝缘层; 以及与阴极和一个或多个电子发射区电连接的电阻层。 这里，电阻层包括氮化硼基材料。

公开(公告)号：US20090035939A1

公开(公告)日：2009-02-05

申请号：US11830985

申请日：2007-07-31

Applicant: Steven Young ,  William Dauksher ,  Emmett Howard ,  Donald Weston

Inventor： Steven Young ,  William Dauksher ,  Emmett Howard ,  Donald Weston

IPC: H01L21/44

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J2201/3195

Abstract: A method for minimizing fabrication defects in ballast contact to a conductor in monolithically integrated semiconductor devices includes forming a sloping sidewall (318, 424) in both an insulating layer (106, 718) overlying a conductive layer (104, 714) by etching with a an RF biased fluorine based chemistry and an RF biased chlorine based chemistry, respectively, as defined by a single resist layer (108) having a sloped sidewall (212). A ballast layer (526, 726) is deposited on the structure (100, 700) and metal contacts (632, 634, 636, 638, 722) are disposed on the ballast layer (526, 722).

Abstract translation: 一种用于使在单片集成半导体器件中的导体的镇流器接触中的制造缺陷最小化的方法包括：在覆盖导电层（104,714）的绝缘层（106,78）中形成倾斜侧壁（318,424） 分别由具有倾斜侧壁（212）的单个抗蚀剂层（108）限定的RF偏置氟基化学和RF偏置氯基化学。 沉积在结构（100,700）上的压载层（526,726），并且金属触点（632,634,636,638,722）设置在镇流器层（526,722）上。

公开(公告)号：US20090026944A1

公开(公告)日：2009-01-29

申请号：US11782070

申请日：2007-07-24

Applicant: Lionel J. Riviere-Cazaux

Inventor： Lionel J. Riviere-Cazaux

IPC: H01J3/00 ,  H01J1/62 ,  H01J9/02

CPC classification number: H01J3/022 ,  H01J1/3044 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2201/3195 ,  H01J2329/0423 ,  H01J2329/0497

Abstract: A method for making a field emission cathode structure includes forming a ballast layer over a column metal layer, forming a dielectric layer over the ballast layer, forming a line metal layer over the dielectric layer, forming a trench in the line metal layer and the dielectric layer, the trench extending to the ballast layer, and forming a sidewall spacer and a sidewall blade adjacent a sidewall of the trench, where the sidewall spacer is between the dielectric layer and the sidewall blade, and where the conformal spacer is recessed as compared to the sidewall blade such that a gap is present between the sidewall blade and the line metal layer.

Abstract translation: 一种制造场致发射阴极结构的方法包括在柱金属层上形成压载层，在镇流器层上形成电介质层，在电介质层上形成线金属层，在线金属层和电介质中形成沟槽 层，沟槽延伸到镇流器层，以及邻近沟槽的侧壁形成侧壁间隔件和侧壁叶片，其中侧壁间隔物位于介电层和侧壁叶片之间，并且其中保形间隔件相对于凹槽 侧壁叶片使得在侧壁叶片和线金属层之间存在间隙。