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    Hollow cathode device and method for using the device to control the uniformity of a plasma process
    17.
    发明授权
    Hollow cathode device and method for using the device to control the uniformity of a plasma process 有权
    空心阴极器件和使用该器件来控制等离子体工艺的均匀性的方法

    公开(公告)号：US08409459B2

    公开(公告)日：2013-04-02

    申请号：US12039236

    申请日：2008-02-28

    Applicant: Kazuki Denpoh ,  Peter L G Ventzek ,  Lin Xu ,  Lee Chen

    Inventor： Kazuki Denpoh ,  Peter L G Ventzek ,  Lin Xu ,  Lee Chen

    IPC: H01L21/306

    CPC classification number: H01L21/02 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  H01J31/00 ,  H01J37/3244 ,  H01J37/32596

    Abstract: A chamber component configured to be coupled to a processing chamber is described. The chamber component comprises one or more adjustable gas passages through which a process gas is introduced to the process chamber. The adjustable gas passage may be configured to form a hollow cathode that creates a hollow cathode plasma in a hollow cathode region having one or more plasma surfaces in contact with the hollow cathode plasma. Therein, at least one of the one or more plasma surfaces is movable in order to vary the size of the hollow cathode region and adjust the properties of the hollow cathode plasma. Furthermore, one or more adjustable hollow cathodes may be utilized to adjust a plasma process for treating a substrate.

    Abstract translation: 描述了被配置为联接到处理室的室部件。 腔室部件包括一个或多个可调节的气体通道，工艺气体通过该气体通道被引入到处理室。 可调节气体通道可以被配置成形成空心阴极，该中空阴极在中空阴极区域中形成中空阴极等离子体，其具有与空心阴极等离子体接触的一个或多个等离子体表面。 其中，一个或多个等离子体表面中的至少一个可移动以便改变中空阴极区域的尺寸并调节中空阴极等离子体的性质。 此外，可以使用一个或多个可调整的中空阴极来调节用于处理衬底的等离子体工艺。

    HOLLOW CATHODE DEVICE AND METHOD FOR USING THE DEVICE TO CONTROL THE UNIFORMITY OF A PLASMA PROCESS
    18.
    发明申请
    HOLLOW CATHODE DEVICE AND METHOD FOR USING THE DEVICE TO CONTROL THE UNIFORMITY OF A PLASMA PROCESS 有权
    中空阴极设备和使用设备来控制等离子体过程的均匀性的方法

    公开(公告)号：US20090218212A1

    公开(公告)日：2009-09-03

    申请号：US12039236

    申请日：2008-02-28

    Applicant: Kazuki Denpoh ,  Peter LG Ventzek ,  Lin Xu ,  Lee Chen

    Inventor： Kazuki Denpoh ,  Peter LG Ventzek ,  Lin Xu ,  Lee Chen

    IPC: H01L21/306

    CPC classification number: H01L21/02 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  H01J31/00 ,  H01J37/3244 ,  H01J37/32596

    Abstract: A chamber component configured to be coupled to a processing chamber is described. The chamber component comprises one or more adjustable gas passages through which a process gas is introduced to the process chamber. The adjustable gas passage may be configured to form a hollow cathode that creates a hollow cathode plasma in a hollow cathode region having one or more plasma surfaces in contact with the hollow cathode plasma. Therein, at least one of the one or more plasma surfaces is movable in order to vary the size of the hollow cathode region and adjust the properties of the hollow cathode plasma. Furthermore, one or more adjustable hollow cathodes may be utilized to adjust a plasma process for treating a substrate.

    Abstract translation: 描述了被配置为联接到处理室的室部件。 腔室部件包括一个或多个可调节的气体通道，工艺气体通过该气体通道被引入到处理室。 可调节气体通道可以被配置成形成空心阴极，该中空阴极在中空阴极区域中形成中空阴极等离子体，其具有与空心阴极等离子体接触的一个或多个等离子体表面。 其中，一个或多个等离子体表面中的至少一个可移动以便改变中空阴极区域的尺寸并调节中空阴极等离子体的性质。 此外，可以使用一个或多个可调整的中空阴极来调节用于处理衬底的等离子体工艺。

    SWITCHING MICRO-RESONANT STRUCTURES BY MODULATING A BEAM OF CHARGED PARTICLES
    19.
    发明申请
    SWITCHING MICRO-RESONANT STRUCTURES BY MODULATING A BEAM OF CHARGED PARTICLES 有权
    通过调制填充颗粒的束来切换微结构

    公开(公告)号：US20090140178A1

    公开(公告)日：2009-06-04

    申请号：US12329866

    申请日：2008-12-08

    Applicant: Jonathan GORRELL ,  Mark Davidson ,  Michael E. Maines

    Inventor： Jonathan GORRELL ,  Mark Davidson ,  Michael E. Maines

    IPC: G21G4/00

    CPC classification number: H01J27/022 ,  G21K1/06 ,  G21K5/04 ,  H01J25/00 ,  H01J29/70 ,  H01J31/00

    Abstract: When using micro-resonant structures, a resonant structure may be turned on or off (e.g., when a display element is turned on or off in response to a changing image or when a communications switch is turned on or off to send data different data bits). Rather than turning the charged particle beam on and off, the beam may be moved to a position that does not excite the resonant structure, thereby turning off the resonant structure without having to turn off the charged particle beam. In one such embodiment, at least one deflector is placed between a source of charged particles and the resonant structure(s) to be excited. When the resonant structure is to be turned on (i.e., excited), the at least one deflector allows the beam to pass by undeflected. When the resonant structure is to be turned off, the at least one deflector deflects the beam away from the resonant structure by an amount sufficient to prevent the resonant structure from becoming excited.

    Abstract translation: 当使用微谐振结构时，可以打开或关闭谐振结构（例如，当响应于改变的图像打开或关闭显示元件时，或者当通信开关被打开或关闭以发送数据不同的数据位 ）。 不是打开和关闭带电粒子束，而是可以将光束移动到不激发谐振结构的位置，从而关闭谐振结构，而不必关闭带电粒子束。 在一个这样的实施例中，至少一个偏转器被放置在带电粒子源和待激发的谐振结构之间。 当谐振结构要被接通（即激励）时，至少一个偏转器允许光束通过未偏转。 当谐振结构要关闭时，至少一个偏转器将光束从谐振结构偏离足以防止谐振结构被激发的量。

    Microdevice, microdevice array, amplifying circuit, memory device, analog switch, and current control unit
    20.
    发明申请
    Microdevice, microdevice array, amplifying circuit, memory device, analog switch, and current control unit 有权
    微器件，微器件阵列，放大电路，存储器件，模拟开关和电流控制单元

    公开(公告)号：US20050073790A1

    公开(公告)日：2005-04-07

    申请号：US10951832

    申请日：2004-09-28

    Applicant: Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada

    Inventor： Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada

    IPC: H02H7/00

    CPC classification number: H03F21/00 ,  B82Y10/00 ,  H01J1/312 ,  H01J31/00

    Abstract: A microdevice has an electron emitter including a memory for accumulating electric charges corresponding to an input voltage, for emitting electrons corresponding to the electric charges accumulated in said memory; and an amplifier connected to a power supply and including a collector electrode for capturing the electrons emitted from the electron emitter. The atmosphere between at least the electron emitter and the collector electrode is a vacuum. When the electrons emitted from the electron emitter are captured by the collector electrode of the amplifier, a collector current flows between the collector electrode and the electron emitter to amplify the input voltage.

    Abstract translation: 微器件具有电子发射器，其包括用于累积对应于输入电压的电荷的存储器，用于发射对应于在所述存储器中累积的电荷的电子; 以及连接到电源并且包括用于捕获从电子发射器发射的电子的集电极的放大器的放大器。 至少电子发射体和集电极之间的气氛是真空。 当从电子发射体发射的电子被放大器的集电极俘获时，集电极电流在集电极和电子发射极之间流动，以放大输入电压。

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