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    Switching micro-resonant structures using at least one director
    2.
    发明授权
    Switching micro-resonant structures using at least one director 有权
    使用至少一个导向器切换微谐振结构

    公开(公告)号：US07586097B2

    公开(公告)日：2009-09-08

    申请号：US11325534

    申请日：2006-01-05

    Applicant: Jonathan Gorrell ,  Mark Davidson ,  Michael E Maines

    Inventor： Jonathan Gorrell ,  Mark Davidson ,  Michael E Maines

    IPC: G09G1/00

    CPC classification number: H01J27/022 ,  G21K1/06 ,  G21K5/04 ,  H01J25/00 ,  H01J29/70 ,  H01J31/00

    Abstract: When using micro-resonant structures, it is possible to use the same source of charged particles to cause multiple resonant structures to emit electromagnetic radiation. This reduces the number of sources that are required for multi-element configurations, such as displays with plural rows (or columns) of pixels. In one such embodiment, at least one deflector is placed in between first and second resonant structures. After the beam passes by at least a portion of the first resonant structure, it is directed to a path such that it can be directed towards the second resonant structure. The amount of deflection needed to direct the beam toward the second resonant structure is based on the amount of deflection, if any, that the beam underwent as it passed by the first resonant structure. This process can be repeated in series as necessary to produce a set of resonant structures in series.

    Abstract translation: 当使用微谐振结构时，可以使用相同的带电粒子源来引起多个谐振结构发射电磁辐射。 这减少了多元素配置所需的源数，例如具有多行（或多列）像素的显示。 在一个这样的实施例中，至少一个偏转器被放置在第一和第二谐振结构之间。 在光束通过第一谐振结构的至少一部分之后，它被引向路径，使得其可以被引向第二共振结构。 将光束引向第二谐振结构所需的偏转量基于当光束经过第一谐振结构时经过的偏转量（如果有的话）。 该过程可以根据需要串联重复以产生一组串联的共振结构。

    Switching micro-resonant structures by modulating a beam of charged particles
    4.
    发明授权
    Switching micro-resonant structures by modulating a beam of charged particles 有权
    通过调制带电粒子束来切换微谐振结构

    公开(公告)号：US09076623B2

    公开(公告)日：2015-07-07

    申请号：US13774593

    申请日：2013-02-22

    Applicant: ADVANCED PLASMONICS, INC.

    Inventor： Jonathan Gorrell ,  Mark Davidson ,  Michael E. Maines

    IPC: H01J31/00 ,  H01J27/02 ,  H01J29/70 ,  H01J25/00

    CPC classification number: H01J27/022 ,  G21K1/06 ,  G21K5/04 ,  H01J25/00 ,  H01J29/70 ,  H01J31/00

    Abstract: When using micro-resonant structures, a resonant structure may be turned on or off (e.g., when a display element is turned on or off in response to a changing image or when a communications switch is turned on or off to send data different data bits). Rather than turning the charged particle beam on and off, the beam may be moved to a position that does not excite the resonant structure, thereby turning off the resonant structure without having to turn off the charged particle beam. In one such embodiment, at least one deflector is placed between a source of charged particles and the resonant structure(s) to be excited. When the resonant structure is to be turned on (i.e., excited), the at least one deflector allows the beam to pass by undeflected. When the resonant structure is to be turned off, the at least one deflector deflects the beam away from the resonant structure by an amount sufficient to prevent the resonant structure from becoming excited.

    Abstract translation: 当使用微谐振结构时，可以打开或关闭谐振结构（例如，当响应于改变的图像打开或关闭显示元件时，或者当通信开关被打开或关闭以发送数据不同的数据位 ）。 不是打开和关闭带电粒子束，而是可以将光束移动到不激发谐振结构的位置，从而关闭谐振结构，而不必关闭带电粒子束。 在一个这样的实施例中，至少一个偏转器被放置在带电粒子源和待激发的谐振结构之间。 当谐振结构要被接通（即激励）时，至少一个偏转器允许光束通过未偏转。 当谐振结构要关闭时，至少一个偏转器将光束从谐振结构偏离足以防止谐振结构被激发的量。

    SWITCHING MICRO-RESONANT STRUCTURES BY MODULATING A BEAM OF CHARGED PARTICLES
    5.
    发明申请
    SWITCHING MICRO-RESONANT STRUCTURES BY MODULATING A BEAM OF CHARGED PARTICLES 审中-公开

    公开(公告)号：US20150001424A1

    公开(公告)日：2015-01-01

    申请号：US14487263

    申请日：2014-09-16

    Applicant: ADVANCED PLASMONICS, INC.

    Inventor： Jonathan Gorrell ,  Mark Davidson ,  Michael E. Maines

    IPC: G21K5/04 ,  G21K1/06

    CPC classification number: G21K5/04 ,  G21K1/06 ,  H01J25/00 ,  H01J27/022 ,  H01J29/70 ,  H01J31/00

    Abstract: When using micro-resonant structures, a resonant structure may be turned on or off (e.g., when a display element is turned on or off in response to a changing image or when a communications switch is turned on or off to send data different data bits). Rather than turning the charged particle beam on and off, the beam may be moved to a position that does not excite the resonant structure, thereby turning off the resonant structure without having to turn off the charged particle beam. In one such embodiment, at least one deflector is placed between a source of charged particles and the resonant structure(s) to be excited. When the resonant structure is to be turned on (i.e., excited), the at least one deflector allows the beam to pass by undeflected. When the resonant structure is to be turned off, the at least one deflector deflects the beam away from the resonant structure by an amount sufficient to prevent the resonant structure from becoming excited.

    Switching micro-resonant structures using at least one director
    6.
    发明申请
    Switching micro-resonant structures using at least one director 有权
    使用至少一个导向器切换微谐振结构

    公开(公告)号：US20070154846A1

    公开(公告)日：2007-07-05

    申请号：US11325534

    申请日：2006-01-05

    Applicant: Jonathan Gorrell ,  Mark Davidson ,  Michael Maines

    Inventor： Jonathan Gorrell ,  Mark Davidson ,  Michael Maines

    IPC: G03C5/00

    CPC classification number: H01J27/022 ,  G21K1/06 ,  G21K5/04 ,  H01J25/00 ,  H01J29/70 ,  H01J31/00

    Abstract: When using micro-resonant structures, it is possible to use the same source of charged particles to cause multiple resonant structures to emit electromagnetic radiation. This reduces the number of sources that are required for multi-element configurations, such as displays with plural rows (or columns) of pixels. In one such embodiment, at least one deflector is placed in between first and second resonant structures. After the beam passes by at least a portion of the first resonant structure, it is directed to a path such that it can be directed towards the second resonant structure. The amount of deflection needed to direct the beam toward the second resonant structure is based on the amount of deflection, if any, that the beam underwent as it passed by the first resonant structure. This process can be repeated in series as necessary to produce a set of resonant structures in series.

    Abstract translation: 当使用微谐振结构时，可以使用相同的带电粒子源来引起多个谐振结构发射电磁辐射。 这减少了多元素配置所需的源数，例如具有多行（或多列）像素的显示。 在一个这样的实施例中，至少一个偏转器被放置在第一和第二谐振结构之间。 在光束通过第一谐振结构的至少一部分之后，它被引向路径，使得其可以被引向第二共振结构。 将光束引向第二谐振结构所需的偏转量基于当光束经过第一谐振结构时经过的偏转量（如果有的话）。 该过程可以根据需要串联重复以产生一组串联的共振结构。

    Semiconductor device with vertical electron injection and method for making same
    7.
    发明申请
    Semiconductor device with vertical electron injection and method for making same 审中-公开
    具有垂直电子注入的半导体器件及其制造方法

    公开(公告)号：US20030116791A1

    公开(公告)日：2003-06-26

    申请号：US10276691

    申请日：2002-11-18

    Inventor： Robert Baptist ,  Fabrice Letertre

    IPC: H01L029/76

    CPC classification number: H01L33/20 ,  H01J31/00 ,  H01L33/007 ,  H01L33/0079 ,  H01L2924/0002 ,  H01S3/0959 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/04 ,  H01S5/0425 ,  H01S5/10 ,  H01S5/3013 ,  H01S5/32341 ,  H01L2924/00

    Abstract: The present invention relates to a semiconductor device with vertical electron injection, comprising a support substrate (2), a structure comprising at least one monocrystalline thin film (7) transferred onto the support substrate and integral with the support substrate, and at least one electronic component, the support substrate (2) comprising at least one recess enabling electric or electronic access to the electronic component, through the monocrystalline thin film, the device also comprising means (13, 14) enabling vertical electron injection into the electronic component.

    Abstract translation: 本发明涉及一种具有垂直电子注入的半导体器件，包括支撑衬底（2），包括至少一个转移到支撑衬底上并与支撑衬底成一体的单晶薄膜（7）的结构，以及至少一个电子 所述支撑基板（2）包括至少一个能够通过所述单晶薄膜电子或电子进入所述电子部件的凹部，所述装置还包括使垂直电子注入所述电子部件的装置（13,14）。

    Microdevice, microdevice array, amplifying circuit, memory device, analog switch, and current control unit
    9.
    发明授权
    Microdevice, microdevice array, amplifying circuit, memory device, analog switch, and current control unit 有权
    微器件，微器件阵列，放大电路，存储器件，模拟开关和电流控制单元

    公开(公告)号：US07719201B2

    公开(公告)日：2010-05-18

    申请号：US10951832

    申请日：2004-09-28

    Applicant: Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada

    Inventor： Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Iwao Ohwada

    IPC: G09G3/10 ,  H01J1/00

    CPC classification number: H03F21/00 ,  B82Y10/00 ,  H01J1/312 ,  H01J31/00

    Abstract: A microdevice has an electron emitter including a memory for accumulating electric charges corresponding to an input voltage, for emitting electrons corresponding to the electric charges accumulated in said memory; and an amplifier connected to a power supply and including a collector electrode for capturing the electrons emitted from the electron emitter. The atmosphere between at least the electron emitter and the collector electrode is a vacuum. When the electrons emitted from the electron emitter are captured by the collector electrode of the amplifier, a collector current flows between the collector electrode and the electron emitter to amplify the input voltage.

    Abstract translation: 微器件具有电子发射器，其包括用于累积对应于输入电压的电荷的存储器，用于发射对应于在所述存储器中累积的电荷的电子; 以及连接到电源并且包括用于捕获从电子发射器发射的电子的集电极的放大器的放大器。 至少电子发射体和集电极之间的气氛是真空。 当从电子发射体发射的电子被放大器的集电极俘获时，集电极电流在集电极和电子发射极之间流动，以放大输入电压。

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