公开(公告)号：US20110304724A1

公开(公告)日：2011-12-15

申请号：US13071797

申请日：2011-03-25

Applicant: Takashi YAMAZAKI ,  Takeshi SOEDA

Inventor： Takashi YAMAZAKI ,  Takeshi SOEDA

IPC: H04N7/18

CPC classification number: H04N7/18 ,  G06T7/62 ,  G06T7/66 ,  G06T2207/10056 ,  G06T2207/30108 ,  H01J37/26 ,  H01J37/28 ,  H01J37/295 ,  H01J2237/22 ,  H01J2237/24578 ,  H01J2237/2805

Abstract: A physical properties measuring method includes: acquiring an experimental convergent beam electron diffraction image of a sample by using a transmission electron microscope; calculating Zernike moment intensities of the experimental convergent beam electron diffraction image; and comparing the Zernike moment intensities of the experimental convergent beam electron diffraction image with Zernike moment intensities of calculated convergent beam electron diffraction images calculated on changed physical properties of the sample.

Abstract translation: 物理性质测量方法包括：使用透射电子显微镜获取样品的实验收敛束电子衍射图像; 计算实验收敛束电子衍射图像的泽尼克力矩; 并且将实验收敛束电子衍射图像的泽尼克力矩与用样品的改变的物理性质计算的计算的收敛束电子衍射图像的泽尼克力矩进行比较。

公开(公告)号：US08076640B2

公开(公告)日：2011-12-13

申请号：US12549029

申请日：2009-08-27

Applicant: Christoph T Koch

Inventor： Christoph T Koch

IPC: G01N23/20

CPC classification number: G01N23/20058 ,  H01J37/26 ,  H01J37/295 ,  H01J2237/1506 ,  H01J2237/2614

Abstract: The invention relates to a method and a device for measuring electron diffraction of a sample, including the steps of illuminating the sample with an incident electron beam which is deflected from a sample axis to hit the sample at an angle of incidence relative to the sample axis, at least partially subjecting the incident electron beam to diffraction by the sample, subjecting the diffracted and undiffracted electron beams transmitted through the sample to a partial deflection compensation, detecting the intensity of the diffracted and undiffracted electron beams transmitted through the sample in dependency on the angle of incidence and a scattering angle of the diffracted beam. The invention also relates to a computer program for controlling a transmission electron microscope for carrying out the inventive method.

Abstract translation: 本发明涉及一种用于测量样品的电子衍射的方法和装置，包括以入射电子束照射样品的步骤，入射电子束从样品轴线偏转，以相对于样品轴线的入射角撞击样品 至少部分地使入射的电子束受到样品的衍射，对通过样品透射的衍射和未衍射的电子束进行部分偏转补偿，根据所述样品检测衍射和未衍射的电子束的强度 入射角和衍射光束的散射角。 本发明还涉及一种用于控制透射电子显微镜用于实施本发明的方法的计算机程序。

公开(公告)号：US07816648B2

公开(公告)日：2010-10-19

申请号：US11547054

申请日：2005-03-07

Applicant: Ken Harada ,  Tetsuya Akashi ,  Yoshihiko Togawa ,  Tsuyoshi Matsuda

Inventor： Ken Harada ,  Tetsuya Akashi ,  Yoshihiko Togawa ,  Tsuyoshi Matsuda

IPC: G01B15/00

CPC classification number: H01J37/295 ,  H01J37/26 ,  H01J2237/1514 ,  H01J2237/2614

Abstract: In an electron beam interference system using an electron biprism, which is capable of independently controlling each of the interference fringe spacing s and the interference width W, both of which are important parameters for an interferometer and for an interferogram acquired by the interferometer, an optical system used in a two-stage electron biprism interferometer is adopted. The optical system uses two stages of electron biprisms in an optical axis direction to give the flexibility to the relative magnification relative to a specimen image and that relative to an image of a filament electrode of the electron biprism. In addition, as a two-stage configuration in which two objective lenses (51, 52) are combined, independently controlling the focal length of each objective lens makes it possible to set the relative magnification relative to a specimen image and that relative to an image of the filament electrode of the electron biprism at arbitrary values.

Abstract translation: 在使用电子双棱镜的电子束干涉系统中，其能够独立地控制每个干涉条纹间距s和干涉宽度W，这两者都是干涉仪和干涉仪获取的干涉图的重要参数，光学 采用两级电子双棱镜干涉仪中使用的系统。 光学系统在光轴方向上使用两阶段的电子双棱镜，以相对于标本图像相对于相对放大率以及相对于电子双棱镜的细丝电极的图像具有灵活性。 另外，作为组合了两个物镜（51,52）的两级配置，独立地控制每个物镜的焦距使得可以相对于标本图像和相对于图像设置相对放大率 的电子双棱镜的灯丝电极的任意值。

公开(公告)号：US20090273789A1

公开(公告)日：2009-11-05

申请号：US11883568

申请日：2006-01-27

Applicant: Ken Harada ,  Tetsuya Akashi ,  Yoshihiko Togawa ,  Tsuyoshi Matsuda ,  Noboru Moriya

Inventor： Ken Harada ,  Tetsuya Akashi ,  Yoshihiko Togawa ,  Tsuyoshi Matsuda ,  Noboru Moriya

IPC: G01B9/02 ,  H01J3/14

CPC classification number: H01J37/295 ,  G01N23/00 ,  G02B19/0014 ,  G02B19/0047 ,  G03H5/00 ,  H01J37/04 ,  H01J2237/1514 ,  H01J2237/228 ,  H01J2237/2614

Abstract: A double-biprism electron interferometer is an optical system which dramatically increases the degree of freedom of a conventional one-stage electron interferometer. The double biprism interferometer, however, is the same as the optical system of the single electron biprism in terms of the one-dimensional shape of an electron hologram formed by filament electrodes, the direction of an interference area, and the azimuth of the interference fringes. In other words, the longitudinal direction of the interference area is determined corresponding to the direction of the filament electrodes, and the azimuth of the interference fringes only coincides with and is in parallel with the longitudinal direction of the interference area. An interferometer according to the present invention has upper-stage and lower-stage electron biprisms, and operates with an azimuth angle Φ between filament electrodes of the upper-stage and lower-stage electron biprisms to arbitrarily control an interference area and an azimuth θ of the interference fringes formed therein.

Abstract translation: 双二棱镜电子干涉仪是一种显着提高常规一级电子干涉仪自由度的光学系统。 然而，双棱镜干涉仪与由单丝电极组成的电子全息图的一维形状，干涉区域的方向和干涉条纹的方位角的单电子双棱镜的光学系统相同 。 换句话说，干扰区域的长度方向根据灯丝电极的方向确定，并且干涉条纹的方位角仅与干涉区域的纵向方向一致并且平行。 根据本发明的干涉仪具有上级和下级电子双极性，并且在上级和下级电子双极之间的细丝电极之间的方位角Φi操作，以任意地控制干扰区域和方位角θ 其中形成的干涉条纹。

公开(公告)号：US20070272861A1

公开(公告)日：2007-11-29

申请号：US10585359

申请日：2005-01-07

Applicant: Ken Harada ,  Tatsuya Akashi ,  Yoshihiko Togawa ,  Tsuyoshi Matsuda

Inventor： Ken Harada ,  Tatsuya Akashi ,  Yoshihiko Togawa ,  Tsuyoshi Matsuda

IPC: G01N23/00 ,  G02B21/00

CPC classification number: H01J37/295 ,  H01J2237/1514 ,  H01J2237/2614

Abstract: The present invention provides a technique enabling to control fringe spacing s and an interference width W independently of each other, which are important parameters for an interferometer using an electron biprism. In the present invention, two electron biprisms 9u, 9b are used in two stages along the optical axis, and fringe spacing s and an interference width W are controlled independently of each other by controlling a voltage applied to an electrode of each of the electron biprisms. Also Fresnel diffraction can be suppressed.

Abstract translation: 本发明提供一种能够彼此独立地控制边缘间隔s和干涉宽度W的技术，这是使用电子双棱镜的干涉仪的重要参数。 在本发明中，两个电子双棱镜9u，9b沿着光轴两级使用，并且边缘间隔s和干涉宽度W通过控制施加到每个的电极的电压彼此独立地控制 电子双极。 也可以抑制菲涅尔衍射。

公开(公告)号：US20070200070A1

公开(公告)日：2007-08-30

申请号：US11364299

申请日：2006-02-28

Applicant: Rudolf Tromp

Inventor： Rudolf Tromp

IPC: H01J37/153 ,  G01N23/225 ,  G01N23/227 ,  H01J37/05 ,  H01J37/26 ,  H01J49/46

CPC classification number: H01J37/153 ,  H01J37/05 ,  H01J37/252 ,  H01J37/295 ,  H01J2237/055 ,  H01J2237/1534 ,  H01J2237/2538 ,  H01J2237/2544

Abstract: An aberration-correcting microscopy instrument is provided. The instrument has a first magnetic deflector disposed for reception of a first non-dispersed electron diffraction pattern. The first magnetic deflector is also configured for projection of a first energy dispersed electron diffraction pattern in an exit plane of the first magnetic deflector. The instrument also has an electrostatic lens disposed in the exit plane of a first magnetic deflector, as well as a second magnetic deflector substantially identical to the first magnetic deflector. The second magnetic deflector is disposed for reception of the first energy dispersed electron diffraction pattern from the electrostatic lens. The second magnetic deflector is also configured for projection of a second non-dispersed electron diffraction pattern in a first exit plane of the second magnetic deflector. The instrument also has an electron mirror configured for correction of one or more aberrations in the second non-dispersed electron diffraction pattern. The electron mirror is disposed for reflection of the second non-dispersed electron diffraction pattern to the second magnetic deflector for projection of a second energy dispersed electron diffraction pattern in a second exit plane of the second magnetic deflector.

Abstract translation: 提供了一种像差校正显微镜仪器。 仪器具有设置用于接收第一非分散电子衍射图案的第一磁偏转器。 第一磁偏转器还被配置用于在第一磁偏转器的出射平面中投射第一能量分散电子衍射图案。 仪器还具有设置在第一磁偏转器的出射平面中的静电透镜以及与第一磁偏转器基本相同的第二磁偏转器。 第二磁偏转器被设置用于从静电透镜接收第一能量分散电子衍射图案。 第二磁偏转器还被配置用于在第二磁偏转器的第一出射平面中投射第二非分散电子衍射图案。 仪器还具有配置用于校正第二非分散电子衍射图案中的一个或多个像差的电子反射镜。 电子反射镜被设置用于将第二非分散电子衍射图案反射到第二磁偏转器，用于在第二磁偏转器的第二出射平面中投射第二能量分散电子衍射图案。

公开(公告)号：US07250599B2

公开(公告)日：2007-07-31

申请号：US10533598

申请日：2003-11-04

Applicant: Dietmar Funnemann ,  Matthias Escher

Inventor： Dietmar Funnemann ,  Matthias Escher

IPC: H01J39/05 ,  H01J49/44

CPC classification number: H01J37/05 ,  H01J37/295 ,  H01J49/48

Abstract: The invention relates to an energy filter image generator for filtering electrically charged particles. The inventive energy filter comprises at least two toroidal energy analysers (30, 40) arranged one inside the other. A transfer lens device (20) is disposed between the plane of emergence (5) of the first energy analyser (30) and the plane of incidence of the second energy analyser (40), thereby making it possible to obtain the perfect energy filtered reproduction of the surface (1′) of a sample on a detector (10).

Abstract translation: 本发明涉及一种用于过滤带电粒子的能量过滤器图像发生器。 本发明的能量过滤器包括一个彼此内置的至少两个环形能量分析器（30,40）。 转移透镜装置（20）设置在第一能量分析器（30）的出射面（5）和第二能量分析器（40）的入射平面之间，从而可以获得完美的能量过滤再生 的检测器（10）上的样品的表面（1'）。

公开(公告)号：US20070114410A1

公开(公告)日：2007-05-24

申请号：US11654663

申请日：2007-01-18

Applicant: Toshiya Nishiumi ,  Koki Ando

Inventor： Toshiya Nishiumi ,  Koki Ando

IPC: G21K7/00 ,  G01N23/00

CPC classification number: H01J37/295 ,  G01B15/02 ,  G01N23/20058

Abstract: The present invention relates to a method of testing, in the manufacturing process of an LSI (large scale integration) device, a result obtained by the manufacturing process, a testing apparatus therefor, and a semiconductor device suitable for the test. The present invention relates, in particular, to a testing method used to immediately and accurately perform a test of the cross-sectional microstructure of an LSI device obtained by the manufacturing process. The above testing method is characterized by including a sample production step of thinning a semiconductor chip such that the semiconductor chip includes a substrate crystal and a portion added by the manufacturing process, a step of irradiating an electron beam to the semiconductor chip, a step of detecting an electron beam transmitted through the semiconductor chip to thereby obtain an electron beam diffraction image, a step of removing an electron beam diffracted due to the substrate crystal, and a step of comparing, in the electron beam diffraction image, the thickness of grating stripes obtained from the substrate crystal with the thickness of the portion added by the manufacturing process.

Abstract translation: 本发明涉及在LSI（大规模集成）装置的制造工艺中测试通过制造过程获得的结果，其测试装置和适用于该测试的半导体器件的方法。 本发明特别涉及一种用于立即且准确地进行通过制造工艺获得的LSI器件的横截面微结构测试的测试方法。 上述测试方法的特征在于包括：将半导体芯片变薄以使得半导体芯片包括基板晶体和通过制造工艺添加的部分的样品制备步骤，向半导体芯片照射电子束的步骤， 检测通过半导体芯片透射的电子束，从而获得电子束衍射图像，去除由于衬底晶体衍射的电子束的步骤，以及在电子束衍射图像中比较光栅条纹的厚度 通过制造工艺加入的部分的厚度从基板晶体获得。

公开(公告)号：US20040065844A1

公开(公告)日：2004-04-08

申请号：US10664718

申请日：2003-09-17

Applicant: Staib Instrumente GmbH

Inventor： Philippe Staib

IPC: H01J027/00

CPC classification number: H01J37/295

Abstract: An electron source particularly for a RHEED measurement system or a RHEED measurement system as such includes an electron emitter (5), a first deflection stage (6a, b) for radiating an electron beam onto a sample (1), and a second deflection stage between the first stage (6a, b) and the sample 1, preferably near the sample.

Abstract translation: 特别是用于RHEED测量系统或RHEED测量系统的电子源包括电子发射器（5），用于将电子束辐射到样品（1）上的第一偏转台（6a，b）和第二偏转级 在第一阶段（6a，b）和样品1之间，优选在样品附近。

公开(公告)号：US20020003212A1

公开(公告)日：2002-01-10

申请号：US09842442

申请日：2001-04-26

Inventor： Koichi Mukasa ,  Masayuki Ikeda ,  Kazuhisa Sueoka ,  Masakazu Mutoh ,  Hisao Kadono ,  Eisuke Ueda

IPC: H01J037/252 ,  H01J037/20

CPC classification number: H01J37/20 ,  H01J37/295

Abstract: A scattering target constituting an electron spin analyzer is supported by a scattering target-holding member made of a conductive material from the outside of the space formed by an accelerating electrode and an electrode supporter. Then, the scattering target-holding member is supported in insulation by an insulation supporting member made of an insulating material. Moreover, a guiding member is provided so as to cover the periphery of the insulation supporting member for guiding the scattering target, the scattering target-holding member and the insulation supporting member.

Abstract translation: 构成电子自旋分析装置的散射体由由加速电极和电极支撑体形成的空间的外部由导电材料制成的散射体保持部件支撑。 然后，通过由绝缘材料制成的绝缘支撑构件将散射物体保持构件绝缘地支撑。 此外，引导构件被设置成覆盖用于引导散射体，散射体保持构件和绝缘支撑构件的绝缘支撑构件的周边。