公开(公告)号：US20180277510A1

公开(公告)日：2018-09-27

申请号：US15813676

申请日：2017-11-15

Applicant: International Business Machines Corporation

Inventor： ERIC J. CAMPBELL ,  SARAH K. CZAPLEWSKI ,  ELIN LABRECK ,  JENNIFER I. PORTO

IPC: H01L23/00 ,  C09K5/10 ,  H01L23/373 ,  H01L23/367

CPC classification number: H01L24/83 ,  C09K5/10 ,  H01L23/367 ,  H01L23/3675 ,  H01L23/3737 ,  H01L23/42 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/271 ,  H01L2224/2731 ,  H01L2224/2755 ,  H01L2224/2783 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/83201 ,  H01L2224/83874 ,  H01L2224/83986 ,  H01L2924/0635 ,  H01L2924/0665 ,  H01L2924/0715 ,  H01L2924/1434 ,  H01L2924/20211 ,  H01L2924/20212 ,  H01L2924/20213 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/0625

Abstract: A process of forming a thermal interface material structure includes selectively masking a putty pad that includes ultraviolet (UV) curable cross-linkers to form a masked putty pad. The masked putty pad has a first area that is exposed and a second area that is masked. The process also includes exposing the masked putty pad to UV light to form a selectively cross-linked putty pad. The process includes disposing the selectively cross-linked putty pad between an electrical component and a heat spreader to form an assembly. The process further includes compressing the assembly to form a thermal interface material structure that includes a selectively cross-linked thermal interface material.

公开(公告)号：US09994741B2

公开(公告)日：2018-06-12

申请号：US14967353

申请日：2015-12-13

Applicant: James L. Hedrick ,  Robert Dennis Miller ,  Deborah Ann Neumayer ,  Sampath Purushothaman ,  Mary E. Rothwell ,  Willi Volksen ,  Roy R. Yu

Inventor： James L. Hedrick ,  Robert Dennis Miller ,  Deborah Ann Neumayer ,  Sampath Purushothaman ,  Mary E. Rothwell ,  Willi Volksen ,  Roy R. Yu

IPC: C08K3/04 ,  C09J9/00 ,  H01L25/065 ,  H01L25/00 ,  H01L23/00 ,  C09J11/04 ,  C09J11/06 ,  C09J179/08 ,  C09J179/04 ,  C09J183/04 ,  B82Y30/00 ,  B82Y40/00 ,  C08K7/24 ,  C08K5/5425 ,  C08K5/5465 ,  C08K5/548 ,  C08K5/544

CPC classification number: C09J9/00 ,  B82Y30/00 ,  B82Y40/00 ,  C08K3/041 ,  C08K5/5425 ,  C08K5/544 ,  C08K5/5465 ,  C08K5/548 ,  C08K7/24 ,  C08K2201/01 ,  C09J11/04 ,  C09J11/06 ,  C09J179/04 ,  C09J179/08 ,  C09J183/04 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68363 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05684 ,  H01L2224/11831 ,  H01L2224/13147 ,  H01L2224/13184 ,  H01L2224/13562 ,  H01L2224/13565 ,  H01L2224/1369 ,  H01L2224/16147 ,  H01L2224/27444 ,  H01L2224/27452 ,  H01L2224/27612 ,  H01L2224/2929 ,  H01L2224/29393 ,  H01L2224/29499 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81141 ,  H01L2224/81191 ,  H01L2224/81201 ,  H01L2224/81903 ,  H01L2224/83005 ,  H01L2224/83192 ,  H01L2224/83201 ,  H01L2224/8385 ,  H01L2224/83855 ,  H01L2224/83856 ,  H01L2224/83895 ,  H01L2224/9202 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2225/06544 ,  Y10S977/742 ,  Y10S977/833 ,  Y10S977/843 ,  H01L2924/01006 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2224/81 ,  H01L2224/83

Abstract: The present invention relates to CNT filled polymer composite system possessing a high thermal conductivity and high temperature stability so that it is a highly thermally conductive for use in 3D and 4D integration for joining device sub-laminate layers. The CNT/polymer composite also has a CTE close to that of Si, enabling a reduced wafer structural warping during high temperature processing cycling. The composition is tailored to be suitable for coating, curing and patterning by means conventionally known in the art.

公开(公告)号：US20170239728A1

公开(公告)日：2017-08-24

申请号：US15329508

申请日：2015-03-18

Applicant: Heraeus Deutschland GmbH & Co. KG

Inventor： Michael SCHÄFER ,  Wolfgang SCHMITT

IPC: B22F5/00 ,  H01L23/00 ,  B22F3/24 ,  C25D11/34 ,  B22F3/10 ,  B22F7/04

CPC classification number: B22F5/006 ,  B22F3/1003 ,  B22F3/24 ,  B22F7/04 ,  B22F2003/242 ,  B22F2301/255 ,  B22F2302/25 ,  B22F2302/45 ,  B22F2998/10 ,  C25D11/34 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/05186 ,  H01L2224/27003 ,  H01L2224/27505 ,  H01L2224/29139 ,  H01L2224/29147 ,  H01L2224/29164 ,  H01L2224/29186 ,  H01L2224/2957 ,  H01L2224/29686 ,  H01L2224/32221 ,  H01L2224/83005 ,  H01L2224/8302 ,  H01L2224/83055 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/8384 ,  H01L2924/13055 ,  H01L2924/13091 ,  H05K3/32 ,  H05K2203/1131 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/053

Abstract: A method for connecting components involves providing an arrangement of at least two components each containing at least one metallic contact surface and a metallic sintering agent in the form of a metallic solid body having metal oxide surfaces arranged between the components and pressuring sintering the arrangement whereby metal oxide surfaces of the metallic sintering agent and the metallic contact surfaces of the components each form a joint contact surface. The pressure sintering is carried out in an atmosphere containing at least one oxidizable compound and/or the metal oxide surfaces are provided with at least one oxidizable organic compound before formation of the corresponding joint contact surface.

公开(公告)号：US20170186665A1

公开(公告)日：2017-06-29

申请号：US14757845

申请日：2015-12-23

Applicant: Arnab Choudhury ,  John Beatty ,  Prakriti Choudhary

Inventor： Arnab Choudhury ,  John Beatty ,  Prakriti Choudhary

IPC: H01L23/373 ,  H01L21/48

CPC classification number: H01L23/3675 ,  H01L21/4871 ,  H01L21/4882 ,  H01L23/10 ,  H01L23/3735 ,  H01L23/42 ,  H01L23/433 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/18 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/27334 ,  H01L2224/27848 ,  H01L2224/29019 ,  H01L2224/29021 ,  H01L2224/29022 ,  H01L2224/29082 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29116 ,  H01L2224/29118 ,  H01L2224/2912 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29149 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/2916 ,  H01L2224/29163 ,  H01L2224/29164 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/29172 ,  H01L2224/29176 ,  H01L2224/2918 ,  H01L2224/29181 ,  H01L2224/29184 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/32058 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73253 ,  H01L2224/83191 ,  H01L2224/83193 ,  H01L2224/83201 ,  H01L2224/8321 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2224/92225 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/1304 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/1579 ,  H01L2924/16153 ,  H01L2924/16251 ,  H01L2924/1659 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/00014 ,  H01L2924/0532 ,  H01L2924/01004 ,  H01L2924/0103 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/01048 ,  H01L2924/01072 ,  H01L2924/00012

Abstract: Methods, systems, and apparatuses that assist with cooling semiconductor packages, such as multi-chip packages (MCPs) are described. A semiconductor package includes a component on a substrate. The component can include one or more semiconductor dies. The package can also include a multi-reference integrated heat spreader (IHS) solution (also referred to as a smart IHS solution), where the smart IHS solution includes a smart IHS lid. The smart IHS lid includes a cavity formed in a central region of the smart lid. The smart IHS lid can be on the component, such that the cavity corresponds to the component. A first thermal interface material layer (TIM-layer 1) can be on the component. An individual IHS lid (IHS slug) can be on the TIM-layer 1. The IHS slug can be inserted into the cavity. Furthermore, an intermediate thermal interface material layer (TIM-1A layer) can be between the IHS slug and the cavity.

公开(公告)号：US20170152351A1

公开(公告)日：2017-06-01

申请号：US14954409

申请日：2015-11-30

Applicant: International Business Machines Corporation

Inventor： Dylan J. Boday ,  Joseph Kuczynski ,  Timothy C. Mauldin

IPC: C08G81/02 ,  C08G63/676 ,  H01L21/54 ,  C08F299/04 ,  H01L23/373 ,  H01L23/427

CPC classification number: C08G81/021 ,  C08F299/0485 ,  C08G63/676 ,  H01L23/3737 ,  H01L23/4275 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/2919 ,  H01L2224/83201 ,  H01L2924/00012

Abstract: In an example, a thermal interface material includes a polymeric phase-change material.

公开(公告)号：US20170047266A1

公开(公告)日：2017-02-16

申请号：US15215800

申请日：2016-07-21

Applicant: Socionext Inc.

Inventor： Takumi Ihara ,  Nobutaka Shimizu ,  Masamitsu Ikumo

IPC: H01L23/367 ,  H01L23/498 ,  H01L23/31 ,  H01L21/56 ,  H01L23/552 ,  H01L23/00 ,  H01L21/48

CPC classification number: H01L23/3675 ,  H01L21/4882 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/552 ,  H01L24/03 ,  H01L24/09 ,  H01L24/11 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/0401 ,  H01L2224/14051 ,  H01L2224/16227 ,  H01L2224/291 ,  H01L2224/29191 ,  H01L2224/2929 ,  H01L2224/29291 ,  H01L2224/293 ,  H01L2224/29339 ,  H01L2224/29387 ,  H01L2224/32058 ,  H01L2224/32105 ,  H01L2224/32106 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/83201 ,  H01L2224/83862 ,  H01L2224/83874 ,  H01L2224/92 ,  H01L2224/92125 ,  H01L2224/92225 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2924/014 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/27 ,  H01L2924/00012

Abstract: A semiconductor device includes a substrate and a semiconductor element mounted on the top surface of the substrate. On the top surface of the substrate, one or more pads are disposed outside the mounted semiconductor element when seen in a plan view. Then, a protrusion is disposed on each of the pads. A heat sink is disposed above the semiconductor element and the protrusions, and then bonded to the substrate by an adhesive provided between the heat sink and the substrate. The adhesive is provided in such a manner as to be in contact with the protrusions on the substrate.

Abstract translation: 半导体器件包括衬底和安装在衬底顶表面上的半导体元件。 在基板的顶表面上，当在平面图中看时，一个或多个焊盘设置在安装的半导体元件的外部。 然后，在每个焊盘上设置突起。 散热器设置在半导体元件和突起上方，然后通过设置在散热器和基板之间的粘合剂结合到基板。 粘合剂以与基板上的突起接触的方式设置。

公开(公告)号：US20160365332A1

公开(公告)日：2016-12-15

申请号：US14738109

申请日：2015-06-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： ALEXANDER KALNITSKY ,  YI-YANG LEI ,  HSI-CHING WANG ,  CHENG-YU KUO ,  TSUNG LUNG HUANG ,  CHING-HUA HSIEH ,  CHUNG-SHI LIU ,  CHEN-HUA YU ,  CHIN-YU KU ,  DE-DUI LIAO ,  KUO-CHIO LIU ,  KAI-DI WU ,  KUO-PIN CHANG ,  SHENG-PIN YANG ,  ISAAC HUANG

IPC: H01L23/00 ,  H01L21/78

CPC classification number: H01L24/83 ,  H01L21/6835 ,  H01L21/78 ,  H01L24/03 ,  H01L24/73 ,  H01L24/92 ,  H01L24/94 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/2919 ,  H01L2224/73204 ,  H01L2224/83201 ,  H01L2224/8385 ,  H01L2224/921 ,  H01L2224/94 ,  H01L2924/06 ,  H01L2924/07025 ,  H01L2224/03 ,  H01L2924/00014 ,  H01L2924/014

Abstract: A method of manufacturing a semiconductor structure, comprising: receiving a first substrate including a first surface, a second surface opposite to the first surface and a plurality of conductive bumps disposed over the first surface; receiving a second substrate; disposing an adhesive over the first substrate or the second substrate; heating the adhesive in a first ambiance; bonding the first substrate with the second substrate by applying a force of less than about 10,000N upon the first substrate or the second substrate and heating the adhesive in a second ambiance; and thinning down a thickness of the first substrate from the second surface.

Abstract translation: 一种制造半导体结构的方法，包括：接收包括第一表面，与第一表面相对的第二表面的第一基板和设置在第一表面上的多个导电凸块; 接收第二基板; 在所述第一基板或所述第二基板上设置粘合剂; 以第一种氛围加热粘合剂; 通过在第一基板或第二基板上施加小于约10,000N的力将第一基板与第二基板接合并以第二氛围加热粘合剂; 以及从所述第二表面减薄所述第一基板的厚度。

公开(公告)号：US20160358892A1

公开(公告)日：2016-12-08

申请号：US15172097

申请日：2016-06-02

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Haksun LEE ,  KWANG-SEONG CHOI ,  Hyun-cheol BAE ,  Yong Sung EOM

IPC: H01L25/065 ,  H01L23/31 ,  H01L25/00 ,  H01L21/56 ,  H01L23/00

CPC classification number: H01L25/0657 ,  H01L21/561 ,  H01L21/563 ,  H01L23/3121 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/97 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/13025 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29387 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81141 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/83192 ,  H01L2224/83201 ,  H01L2224/8385 ,  H01L2224/92125 ,  H01L2224/92143 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06593 ,  H01L2924/14 ,  H01L2924/1434 ,  H01L2924/1531 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: Provided is a method for manufacturing a semiconductor package, which includes providing a first substrate, providing, over the first substrate, a second substrate including an active region in which a semiconductor element is disposed and a periphery region surrounding the active region, providing an adhesive membrane between the first and second substrates, and mounting the second substrate on the first substrate, wherein the mounting of the second substrate includes aligning the second substrate on the first substrate by using an alignment member protruding from the periphery region of the second substrate.

Abstract translation: 提供一种制造半导体封装的方法，其包括提供第一衬底，在第一衬底上提供包括其中设置有半导体元件的有源区域和包围有源区域的周边区域的第二衬底，提供粘合剂 膜，并且将第二基板安装在第一基板上，其中第二基板的安装包括通过使用从第二基板的周边区域突出的对准构件来将第二基板对准在第一基板上。

公开(公告)号：US20160315065A1

公开(公告)日：2016-10-27

申请号：US15203045

申请日：2016-07-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： CHEN-CHUN CHEN ,  CHIU-JUNG CHEN ,  FU-TSUN TSAI ,  SHIU-KO JANGJIAN ,  CHI-CHERNG JENG ,  HSIN-CHI CHEN

IPC: H01L23/00 ,  H01L27/146 ,  H01L21/027 ,  H01L21/306 ,  H01L21/268

CPC classification number: H01L24/83 ,  H01L21/02019 ,  H01L21/0273 ,  H01L21/268 ,  H01L21/30604 ,  H01L21/76256 ,  H01L27/1464 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/83201 ,  H01L2224/838 ,  H01L2224/83805 ,  H01L2224/8385 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2924/07025

Abstract: A method of manufacturing a semiconductor structure includes providing a first wafer including a surface, removing some portions of the first wafer over the surface to form a plurality of recesses extended over at least a portion of the surface of the first wafer, providing a second wafer, and disposing the second wafer over the surface of the first wafer.

Abstract translation: 制造半导体结构的方法包括提供包括表面的第一晶片，去除表面上的第一晶片的一些部分以形成在第一晶片的表面的至少一部分上延伸的多个凹槽，从而提供第二晶片 并且将第二晶片设置在第一晶片的表面上。

公开(公告)号：US09355988B2

公开(公告)日：2016-05-31

申请号：US14669169

申请日：2015-03-26

Applicant: ROHM CO., LTD.

Inventor： Kenji Fujii ,  Yasumasa Kasuya ,  Mamoru Yamagami ,  Naoki Kinoshita ,  Motoharu Haga

IPC: H01L23/495 ,  H01L23/52 ,  H01L23/00 ,  H01L23/31 ,  H01L23/29 ,  H01L23/433 ,  H01L23/482 ,  H01L23/525

CPC classification number: H01L23/49527 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3142 ,  H01L23/3171 ,  H01L23/3675 ,  H01L23/4334 ,  H01L23/4822 ,  H01L23/49503 ,  H01L23/49548 ,  H01L23/49551 ,  H01L23/49568 ,  H01L23/49572 ,  H01L23/525 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/33 ,  H01L24/73 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/02311 ,  H01L2224/02331 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0346 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05181 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05582 ,  H01L2224/05583 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/1145 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/1161 ,  H01L2224/11825 ,  H01L2224/13008 ,  H01L2224/13011 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13019 ,  H01L2224/13024 ,  H01L2224/13147 ,  H01L2224/13561 ,  H01L2224/13582 ,  H01L2224/13624 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/13666 ,  H01L2224/16014 ,  H01L2224/16245 ,  H01L2224/16258 ,  H01L2224/17107 ,  H01L2224/29008 ,  H01L2224/29082 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29164 ,  H01L2224/29166 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/753 ,  H01L2224/75301 ,  H01L2224/75981 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81201 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/8146 ,  H01L2224/81464 ,  H01L2224/81466 ,  H01L2224/8183 ,  H01L2224/83191 ,  H01L2224/83201 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/8346 ,  H01L2224/83464 ,  H01L2224/83466 ,  H01L2224/8383 ,  H01L2224/92225 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/05042 ,  H01L2924/07025 ,  H01L2924/17724 ,  H01L2924/17747 ,  H01L2924/181 ,  H01L2924/182 ,  H01L2924/186 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2224/05166 ,  H01L2924/01028 ,  H01L2924/0665

Abstract: A semiconductor device has a semiconductor element provided with a functional surface on which a functional circuit is formed and with a back surface facing in the opposite direction to the functional surface, while also having a lead supporting the semiconductor element and electrically connected to the semiconductor element, and a resin package covering at least a portion of the semiconductor element and the lead. The semiconductor element has a functional surface side electrode formed on the functional surface and equipped with a functional surface side raised part that projects in the direction in which the functional surface faces. The functional surface side raised part of the functional surface side electrode is joined to the lead by solid state bonding.

Abstract translation: 半导体器件具有设置有功能表面的半导体元件，功能电路形成在其上，并且背面面向与功能表面相反的方向，同时还具有支撑半导体元件并与半导体元件电连接的引线 以及覆盖半导体元件和引线的至少一部分的树脂封装。 半导体元件具有形成在功能面上的功能面侧电极，其具有在功能面朝向的方向突出的功能面侧凸起部。 功能面侧电极的功能面侧隆起部通过固态接合而与引线接合。