Abstract:
In a Scanning Electron Microscope (SEM) a spot made from a very narrow beam of electrons (11) is scanned in fine strips across the specimen (18), and an image is built up from the electrons (e) that backscattered from area of specimen being scanned. To gather these back-scattered electrons it is presently common to employ a scintillator layer on the front face of a light guide that directs the generated light to a photomultiplier tube (23). However, having the scintillator layer on the front face means that the light has to pass through the layer to enter the guide, which necessarily wastes light by absorption within the thickness of layer material; the invention proposes instead that the light guide (22) have on its back side a scintillator layer (34) angled as though to reflect received electrons along the guide to the PMT (23). In this way the PMT is actually “looking at”, and so receiving light directly from, the front, or input side, of the scintillator layer, and thus the light emitted by the layer does not need to travel through the layer to get to the PMT, and is therefore not attenuated by that layer—and a detector system of the invention is therefore several, even tens, of times more sensitive that one of the Art.
Abstract:
Electron beam writing equipment has an electron source and an electron optics system for scanning an electron beam emitted from the electron source on a sample via deflection means having at least two different deflection speeds. An objective lens is used to form a desired pattern on the sample. The electron beam is moved by high speed scanning with the deflection means to repeat formation of a patterned beam. The electron beam is moved on the mark for beam correction by low speed scanning with the deflection means in synchronization with one cycle of the repetition. The position or the deflection distance of the electron beam or blanking time is corrected using detectors for back scattered or secondary electrons.
Abstract:
A width-measurement method of reducing or eliminating an error in measurement of a width of an object on a sample resulting from the dimension of the beam diameter, wherein a width-measured value of the object to be width-measured which has been obtained on the basis of a secondary signal obtained from secondary particles emitted from the sample having thereon the object to be width-measured is corrected with a value with respect to a dimension value of a beam diameter.
Abstract:
A pattern inspection system for inspecting a substrate surface on which a predetermined pattern is formed with radiation of an electron beam and an optical beam. the pattern inspection system includes a radiation and which radiates an electron beam to the substrate, a detection unit which detects a secondarily generated signal attributable to the radiation of the electron beam, a retrieval unit which retrieves an image from the signal detected by the detection unit, and an image processing unit which classifies the retrieved image depending on a type of the image.
Abstract:
The invention relates to wafer inspection by means of a scanning electron microscope (SEM) column in which the secondary electron detector 22, 24 is positioned centrally above the objective lens of the column. Secondary electrons that leave the central part of the specimen in a direction substantially perpendicular to its surface are inevitably collected in the central part of the detector surface where the bore 36 for the primary beam 6 is situated. Consequently, such electrons do not contribute to the detector signal. In order to avoid such a detrimental loss of signal contribution, it is proposed to provide a central electrode 35 in the central bore 36 such that secondary electrons that approach the bore are driven aside towards the electron-sensitive detector region 48.
Abstract:
A cathode lens is formed between a gun electrode (8) and a specimen (9). An electron probe (11), produced as part of an electron column and suitably focused by lenses (1, 2 and 3) and scanned by suitable deflector/stigmator electrodes (2), is decelerated within the cathode lens field and its final landing energy is finely adjustable by the specimen negative bias. Emitted secondary electrons are re-accelerated within the same field and due to uniformity of this field, they increase their axial velocity only so that they are collimated into a narrow signal beam. The collimated signal beam passes mostly through an aperture (18) of electrode (8), where it enters the gun and a final lens consisting of a central earthed electrode (6) surrounded by two earthed electrodes (7) and (8). The signal beam approaches a special mirror electrode (4), the field of which decelerates and deflects the electrons further off the axis and returns them back towards the specimen (9). They are again re-accelerated in the final lens field, and impact a channel-plate electron multiplier (5) and after amplification, the signal electron beam impacts a collector (7), which can be divided into suitable parts for multichannel detection. The detector may have small dimensions and high resolution, and may be used in microscopes and other devices.
Abstract:
The invention is to observe semiconductor wafers with higher resolution at a low acceleration voltage—in particular, achieving such high-resolution observability when a wafer is inclined or tilted at large angles. A composite lens is used which consists essentially of a single-pole or monopole magnetic field type lens and an electrostatic field invasive lens whereas an electrode of the electrostatic field invasive lens which opposes the wafer is made of a magnetic material while letting a high voltage of the negative polarity be applied to this electrode and the wafer. Even when the wafer is tilted, any astigmatism and axis failure will hardly occur.
Abstract:
An apparatus for surface inspection and processing of a wafer includes a microcolumn and an associated scanning probe microscope. The microcolumn enables high speed scanning of the wafer at a relatively high resolution, while the scanning probe microscope provides atomic resolution of highly localized areas of the wafer. The microcolumn and scanning probe microscope can be partially fabricated out of the same substrate. Additionally, the microcolumn and scanning probe microscope can be a portion of an array of microcolumns and/or scanning probe microscopes. The apparatus may be used for imaging, lithography and spectroscopy.
Abstract:
In an operation of an electron microscope, at least a spot size of an electron beam on a specimen, an acceleration voltage, a detector type, a specimen position, and an observation magnification are set as a predetermined image observation condition and an observation image is picked up under the predetermined image observation condition. Different image observation conditions are automatically set based on the observation image. A plurality of observation images are picked up based on the setup image observation conditions. The plurality of picked-up observation images are simultaneously displayed on a second display section. A desired observation image is selected from among the observation images displayed on the second display section. The selected observation image is displayed on a first display section on an enlarged scale.
Abstract:
The present invention includes a system for localization of defects in test samples. A sample is scanned using a particle beam. Some particles interact with conductive elements and may cause the emission of x-rays. Other particles can pass through the sample entirely and generate a current that can be measured. A higher current generated indicates less conductive material at the scan target that may mean a void, dishing, or erosion is present. Localization of a defect can be confirmed using an x-ray emission detector.