公开(公告)号：US08592776B2

公开(公告)日：2013-11-26

申请号：US12554577

申请日：2009-09-04

Applicant: Momoyo Enyama ,  Hiroya Ohta ,  Osamu Kamimura

Inventor： Momoyo Enyama ,  Hiroya Ohta ,  Osamu Kamimura

IPC: H01J3/16

CPC classification number: H01J37/153 ,  H01J37/1472 ,  H01J2237/151 ,  H01J2237/1534

Abstract: With a multi-beam type charged particle beam apparatus, and a projection charged particle beam apparatus, in the case of off-axial aberration corrector, there is the need for preparing a multitude of multipoles, and power supply sources in numbers corresponding to the number of the multipoles need be prepared. In order to solve this problem as described, a charged particle beam apparatus is provided with at least one aberration corrector wherein the number of the multipoles required in the past is decreased by about a half by disposing an electrostatic mirror in an electron optical system.

Abstract translation: 使用多光束型带电粒子束装置和投影带电粒子束装置，在离轴像差校正器的情况下，需要准备多个多极，并且与数字对应的数量的电源 的多极需要准备。 为了解决上述问题，带电粒子束装置设置有至少一个像差校正器，其中通过在电子光学系统中设置静电镜，过去所需的多极数减少约一半。

公开(公告)号：US20120061565A1

公开(公告)日：2012-03-15

申请号：US13321583

申请日：2010-05-18

Applicant: Momoyo Enyama ,  Hiroya Ohta ,  Taku Ninomiya ,  Mari Nozoe

Inventor： Momoyo Enyama ,  Hiroya Ohta ,  Taku Ninomiya ,  Mari Nozoe

IPC: H01J37/26

CPC classification number: H01J37/28 ,  H01J37/265 ,  H01J2237/2446 ,  H01J2237/2817

Abstract: Disclosed is a charged particle beam device, wherein multibeam secondary electron detectors (121a, 121b, 121c) and a single beam detector (140; 640) are provided, and under the control of a system control unit (135), an optical system control circuit (139) controls a lens and a beam selecting diaphragm (141) and switches the electrooptical conditions between those for multibeam mode and those for single beam mode, thereby one charged particle beam device can be operated as a multibeam charged particle device and a single beam charged particle device by switching. Thus, observation conditions are flexibly changed in accordance with an object to be observed, and a sample can be observed with a high accuracy and high efficiency.

Abstract translation: 公开了一种带电粒子束装置，其中提供多波束二次电子检测器（121a，121b，121c）和单光束检测器（140; 640），并且在系统控制单元（135）的控制下，光学系统控制 电路（139）控制透镜和选择光阑（141），并将电光条件切换到用于多光束模式的光学条件和单光束模式之间，从而一个带电粒子束装置可以作为多光束带电粒子装置和单个 光束带电粒子装置通过切换。 因此，观察条件根据待观察的目标灵活地变化，并且可以高精度和高效率地观察样品。

公开(公告)号：US20080315093A1

公开(公告)日：2008-12-25

申请号：US12149512

申请日：2008-05-02

Applicant: Masaki Hasegawa ,  Hiroya Ohta

Inventor： Masaki Hasegawa ,  Hiroya Ohta

IPC: G01N23/225 ,  G01J1/42

CPC classification number: G01N23/225 ,  H01J37/026 ,  H01J37/285 ,  H01J37/29 ,  H01J2237/0047 ,  H01J2237/221 ,  H01J2237/2446 ,  H01J2237/24495 ,  H01J2237/2482 ,  H01J2237/2855

Abstract: An electron beam inspection apparatus images reflected electrons and cancels negative charging derived from electron-beam irradiation. Ultraviolet rays are irradiated and an irradiated area of ultraviolet rays is displayed as a photoelectron image. The photoelectron image and a reflected-electron image are displayed on a monitor while being superposed on each other, to easily grasp the positional relationship between the images and the difference in size between them. Specifically, the shape of the irradiated area of an electron beam includes the shape of the irradiated area of ultraviolet rays on a display screen. The intensity of the ultraviolet rays in the irradiated area of the electron beam is adjusted while the reflected-electron imaging conditions for the reflected-electron image are sustained. Moreover, an amount-of-ultraviolet ray adjustment mechanism is controlled on the monitor so that an amount of the ultraviolet rays is adjusted while observing a reflected-electron image obtained during ultraviolet irradiation.

Abstract translation: 电子束检查装置对反射电子进行成像并消除由电子束照射产生的负电荷。 照射紫外线，照射紫外线的区域作为光电子图像显示。 光电子图像和反射电子图像在彼此重叠的状态下显示在监视器上，以容易地掌握图像之间的位置关系和它们之间的尺寸差异。 具体地，电子束的照射区域的形状包括在显示屏上照射的紫外线区域的形状。 调整电子束的照射区域中的紫外线的强度，同时维持反射电子图像的反射电子成像条件。 此外，在监视器上控制紫外线量调节机构，使得在观察紫外线照射期间获得的反射电子图像的同时调节紫外线的量。

公开(公告)号：US20080067376A1

公开(公告)日：2008-03-20

申请号：US11751094

申请日：2007-05-21

Applicant: Sayaka Tanimoto ,  Osamu Kamimura ,  Yasunari Sohda ,  Hiroya Ohta

Inventor： Sayaka Tanimoto ,  Osamu Kamimura ,  Yasunari Sohda ,  Hiroya Ohta

IPC: G21K7/00

CPC classification number: H01J37/153 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/1205 ,  H01J2237/1534 ,  H01J2237/1536 ,  H01J2237/2446 ,  H01J2237/2448 ,  H01J2237/24592 ,  H02N13/00

Abstract: This invention provides a charged particle beam apparatus that can makes reduction in off axis aberration and separate detection of secondary beams to be compatible. The charged particle beam apparatus has: an electron optics that forms a plurality of primary charged particle beams, projects them on a specimen, and makes them scan the specimen with a first deflector; a plurality of detectors that individually detect a plurality of secondary charged particle beams produced from the plurality of locations of the specimen by irradiation of the plurality of primary charged particle beams; and a voltage source for applying a voltage to the specimen. The charged particle beam apparatus further has: a Wien filter for separating paths of the primary charged particle beams and paths of the secondary charged particle beams; a second deflector for deflecting the secondary charged particle beams separated by the Wien filter; and control means for controlling the first deflector and the second deflector in synchronization, wherein the plurality of detectors detect the plurality of secondary charged particle beams separated by the Wien filter individually.

Abstract translation: 本发明提供了一种带电粒子束装置，其可以减少离轴像差和将次级束的分离检测兼容。 带电粒子束装置具有：形成多个初级带电粒子束的电子光学器件，将它们投射在样本上，并使它们用第一偏转器扫描样本; 多个检测器，通过多个初级带电粒子束的照射，分别检测从样本的多个位置产生的多个次级带电粒子束; 以及用于向样本施加电压的电压源。 带电粒子束装置还具有：维纳滤波器，用于分离初级带电粒子束的路径和二次带电粒子束的路径; 用于偏转由维恩滤波器分离的二次带电粒子束的第二偏转器; 以及用于同步地控制第一偏转器和第二偏转器的控制装置，其中多个检测器分别检测由维恩过滤器分离的多个次级带电粒子束。

公开(公告)号：US06784442B2

公开(公告)日：2004-08-31

申请号：US10329388

申请日：2002-12-27

Applicant: Masato Muraki ,  Hiroya Ohta ,  Shin-ichi Hashimoto

Inventor： Masato Muraki ,  Hiroya Ohta ,  Shin-ichi Hashimoto

IPC: G21G500

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3177 ,  H01J2237/30472

Abstract: This invention provides a multi-charged-particle beam exposure apparatus capable of easily correcting at a high precision the electron-optic characteristics of each column which constitutes an electron-optic system. The exposure apparatus has magnetic lens arrays (ML1, ML2, ML3, and ML4) which commonly adjust the electron-optic characteristics of a plurality of columns which constitute the electron-optic system, and dynamic focus lenses or deflector arrays which individually correct the electron-optic characteristics of the columns.

Abstract translation: 本发明提供一种能够以高精度容易地校正构成电子光学系统的各列的电子光学特性的多电荷粒子束曝光装置。 曝光装置具有通常调整构成电子光学系统的多个列的电子光学特性的磁透镜阵列（ML1，ML2，ML3和ML4），以及单独校正电子的动态聚焦透镜或偏转器阵列 - 列的光学特性。

公开(公告)号：US06768118B2

公开(公告)日：2004-07-27

申请号：US10350188

申请日：2003-01-24

Applicant: Yoshinori Nakayama ,  Yasunari Sohda ,  Hiroya Ohta ,  Norio Saitou ,  Masato Muraki ,  Masaki Takakuwa

Inventor： Yoshinori Nakayama ,  Yasunari Sohda ,  Hiroya Ohta ,  Norio Saitou ,  Masato Muraki ,  Masaki Takakuwa

IPC: H01J326

CPC classification number: H01J37/244 ,  H01J2237/24405 ,  H01J2237/31774

Abstract: The present invention provides a beam monitoring sensor which can offer both high beam monitoring precision and high speed monitoring in a multi-electron beam writing system and a monitoring method using the same. In a Faraday cup for electron beam monitoring, tantalum or a heavy metal material having an atomic number larger than that of tantalum is used to provide a Faraday cup construction having a high aspect ratio. The micro Faraday cup permits electron beam monitoring having less beam leak to a high acceleration electron beam.

Abstract translation: 本发明提供了一种能够在多电子束书写系统中提供远光监测精度和高速监测的光束监测传感器以及使用其的监测方法。在用于电子束监测的法拉第杯中，钽或重金属 使用原子序数大于钽的材料来提供具有高纵横比的法拉第杯结构。 微法拉第杯允许电子束监测具有较少的光束泄漏到高加速度电子束。

公开(公告)号：US06511048B1

公开(公告)日：2003-01-28

申请号：US09191383

申请日：1998-11-13

Applicant: Yasunari Sohda ,  Yasuhiro Someda ,  Hiroya Ohta ,  Takashi Matsuzaka ,  Norio Saitou ,  Yoshinori Nakayama

Inventor： Yasunari Sohda ,  Yasuhiro Someda ,  Hiroya Ohta ,  Takashi Matsuzaka ,  Norio Saitou ,  Yoshinori Nakayama

IPC: H01J3730

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31776

Abstract: An electron beam lithography apparatus and a semiconductor device pattern forming method for precisely writing patterns near the periphery of a cell mask so that large scale integrated circuits and fine structure devices are fabricated at high yield rates. Cell figures with lower aperture rates are located peripherally and cell figures with higher aperture rates are located closer to a central portion within each of aperture groups furnished on a second mask of the inventive apparatus adopting cell projection. Illustratively, on a mask for use in semiconductor device fabrication, cell figures for forming line patterns and gate patterns are located centrally and cell figures for forming hole patterns are positioned peripherally in each aperture group. This allows the peripherally located figures to be written precisely in each aperture group.

Abstract translation: 一种电子束光刻设备和用于在单元掩模的周围精确地写入图案的半导体器件图案形成方法，从而以高产率制造大规模集成电路和精细结构器件。 具有较低孔径率的单元图形位于外围，并且具有较高孔径率的单元图形位于更接近于采用单元投影的本发明设备的第二掩模上提供的每个孔组内的中心部分。 示例性地，在用于半导体器件制造的掩模上，用于形成线图案和栅极图案的单元图形位于中央，并且用于形成孔图案的单元图形周边地定位在每个孔组中。 这允许在每个孔径组中精确地写入外围定位的图形。

公开(公告)号：US20110049344A1

公开(公告)日：2011-03-03

申请号：US12936030

申请日：2009-04-03

Applicant: Takashi Dobashi ,  Masanari Koguchi ,  Osamu Kamimura ,  Hiroya Ohta ,  Kazutoshi Gohara

Inventor： Takashi Dobashi ,  Masanari Koguchi ,  Osamu Kamimura ,  Hiroya Ohta ,  Kazutoshi Gohara

IPC: G01D18/00 ,  G01N23/00

CPC classification number: H01J37/222 ,  H01J37/26 ,  H01J37/295 ,  H01J2237/24578

Abstract: A charged particle beam microscope device of the present invention is configured such that in a diffraction pattern obtained by radiating a parallel charged particle beam onto a sample (22) having a known structure, a distance (r) between spots of a diffraction pattern, which reflects the structure of the sample, is measured, and the variation of a distance (L) between the sample and a detector, which depends on a diffraction angle (θ), is corrected. This enables the correction of distortion that varies with an off-axis distance from the optical axis in a diffraction pattern, and a high precision structural analysis by performing accurately analyzing the spot positions of the diffraction pattern.

Abstract translation: 本发明的带电粒子束显微镜装置被构造成使得在通过将平行带电粒子束照射到具有已知结构的样品（22）上获得的衍射图案中，衍射图案的点之间的距离（r） 反映样品的结构，被测量，并且校正取决于衍射角（＆amp; s）的样品和检测器之间的距离（L）的变化。 由此，能够通过对衍射图案的光斑位置进行精确的分析，能够进行与衍射图案中的离开光轴的离轴距离变化的畸变校正。

公开(公告)号：US20090001267A1

公开(公告)日：2009-01-01

申请号：US12213905

申请日：2008-06-26

Applicant: Momoyo Enyama ,  Hiroya Ohta

Inventor： Momoyo Enyama ,  Hiroya Ohta

IPC: G01N23/00

CPC classification number: G01N23/22 ,  H01J37/28

Abstract: In a multi-charged-particle-beam apparatus, when an electric field and voltage on a surface of a specimen are varied according to characteristics of the specimen, a layout of plural primary beams on the surface of the specimen and a layout of plural secondary beams on each detector vary. Then, calibration is executed to adjust the primary beams on the surface of the specimen to an ideal layout corresponding to the variation of operating conditions including inspecting conditions such as an electric field on the surface and voltage applied to the specimen. The layout of the primary beams on the surface of the specimen is acquired as images displayed on a display of reference marks on the stage. Variance with an ideal state of the reference marks is measured based upon these images and is corrected by the adjustment of a primary electron optics system and others.

Abstract translation: 在多电荷粒子束装置中，当试样的表面的电场和电压根据试样的特性而变化时，试样表面上的多个主光束的布局和多个次级的布局 每个探测器上的光束变化。 然后，执行校准以将样品表面上的主光束调整为与包括诸如表面上的电场和施加到样本的电压的检查条件的操作条件的变化相对应的理想布局。 获取样品表面上的主光束的布局作为在舞台上的参考标记的显示器上显示的图像。 基于这些图像测量具有参考标记的理想状态的方差，并且通过一次电子光学系统等的调整来校正。

公开(公告)号：US20070164458A1

公开(公告)日：2007-07-19

申请号：US11623776

申请日：2007-01-17

Applicant: Masahiko Ogino ,  Akihiro Miyauchi ,  Takashi Ando ,  Chiseki Haginoya ,  Susumu Komoriya ,  Yasunari Sohda ,  Souichi Katagiri ,  Hiroya Ohta ,  Yoshinori Nakayama

Inventor： Masahiko Ogino ,  Akihiro Miyauchi ,  Takashi Ando ,  Chiseki Haginoya ,  Susumu Komoriya ,  Yasunari Sohda ,  Souichi Katagiri ,  Hiroya Ohta ,  Yoshinori Nakayama

IPC: H01L23/544 ,  H01L21/47

CPC classification number: H01L21/76838 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F9/7076 ,  G11B5/855 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a mold in which a pattern is formed of a fine concavo-convex shape, two or more of alignment marks for determining a relative positional relation between a substrate and a mold are formed concentrically. Moreover, a damaged mark is identified from the positional information and shape of the respective marks, and an alignment between the mold and the substrate to which a resin film is applied is carried out excluding the damaged mark.

Abstract translation: 在图案形成为微细凹凸形状的模具中，同心地形成用于确定基板和模具之间的相对位置关系的两个或更多个对准标记。 此外，根据各个标记的位置信息和形状来识别损坏的标记，并且除了损坏的标记之外，执行模具和施加了树脂膜的基板之间的对准。