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    MULTI CHARGED PARTICLE BEAM WRITING APPARATUS
    2.
    发明公开
    MULTI CHARGED PARTICLE BEAM WRITING APPARATUS 审中-公开

    公开(公告)号：US20240242933A1

    公开(公告)日：2024-07-18

    申请号：US18509474

    申请日：2023-11-15

    Applicant: NuFlare Technology, Inc.

    Inventor： Hirofumi MORITA ,  Haruyuki NOMURA

    IPC: H01J37/317 ,  H01J37/04 ,  H01J37/141 ,  H01J37/145

    CPC classification number: H01J37/3177 ,  H01J37/045 ,  H01J37/141 ,  H01J37/145

    Abstract: A multi charged particle beam writing apparatus includes two or more-stage objective lenses each comprised of a magnetic lens, and configured to focus the beam on a substrate, n (n≥3) correction lenses correcting an imaging state of the multi charged particle beam, and an electric field control electrode to which a positive constant voltage with respect to the substrate is applied. The electric field control electrode generates an electric field between the substrate and the electrode. The objective lenses include a first objective lens, and a second objective lens placed most downstream in a travel direction of the beam. m (n≥m≥1) correction lenses of the n correction lenses are magnetic correction lenses placed in a lens magnetic field of the second objective lens. (n−m) correction lenses are placed upstream of the lens magnetic field of the second objective lens in the travel direction.

    CHARGED PARTICLE SENSORS INCLUDING WIDE BANDGAP MATERIALS
    3.
    发明公开
    CHARGED PARTICLE SENSORS INCLUDING WIDE BANDGAP MATERIALS 审中-公开

    公开(公告)号：US20240194442A1

    公开(公告)日：2024-06-13

    申请号：US18065438

    申请日：2022-12-13

    Applicant: FEI Company

    Inventor： Branislav Straka ,  Jan Lásko ,  Libor Novák ,  Vojtêch Mahel ,  Radek Smolka ,  Petr Glajc

    IPC: H01J37/28 ,  H01J37/141 ,  H01J37/244 ,  H01J37/26

    CPC classification number: H01J37/28 ,  H01J37/141 ,  H01J37/244 ,  H01J37/265 ,  H01J2237/24475

    Abstract: Charged particle microscopy systems, sensors, and techniques are provided. A charged particle sensor can include a housing, configured to be incorporated into a scanning electron microscope (SEM). The charged particle sensor can include a detector cell, mechanically coupled with the housing. The detector cell can include an acceptor layer including a semiconducting material characterized by a bandgap equal to or greater than about 2.0 eV. The acceptor layer can define a first surface and a second surface opposing the first surface. The detector cell can include a first conducting layer disposed on the first surface, a second conducting layer disposed on the second surface, a first contact, electrically coupled with the first conducting layer, and a second contact, electrically coupled with the second conducting layer.

    Objective lens system for fast scanning large FOV
    6.
    发明授权
    Objective lens system for fast scanning large FOV 有权

    公开(公告)号：US11837431B2

    公开(公告)日：2023-12-05

    申请号：US16018008

    申请日：2018-06-25

    Applicant: Hermes Microvision, Inc.

    Inventor： Shuai Li ,  Zhongwei Chen

    IPC: H01J37/147 ,  H01J37/145 ,  H01J37/28 ,  H01J37/141

    CPC classification number: H01J37/145 ,  H01J37/141 ,  H01J37/1472 ,  H01J37/1474 ,  H01J37/1477

    Abstract: The device includes a beam source for generating an electron beam, a beam guiding tube passed through an objective lens, an objective lens for generating a magnetic field in the vicinity of the specimen to focus the particles of the particle beam on the specimen, a control electrode having a potential for providing a retarding field to the particle beam near the specimen to reduce the energy of the particle beam when the beam collides with the specimen, a deflection system including a plurality of deflection units situated along the optical axis for deflecting the particle beam to allow scanning on the specimen with large area, at least one of the deflection units located in the retarding field of the beam, the remainder of the deflection units located within the central bore of the objective lens, and a detection unit to capture secondary electron (SE) and backscattered electrons (BSE).

    ELECTROMAGNETIC LENS AND ELECTRON SOURCE MECHANISM
    7.
    发明公开
    ELECTROMAGNETIC LENS AND ELECTRON SOURCE MECHANISM 审中-公开

    公开(公告)号：US20230335368A1

    公开(公告)日：2023-10-19

    申请号：US18170142

    申请日：2023-02-16

    Applicant: NuFlare Technology, Inc.

    Inventor： Munehiro OGASAWARA ,  Atsushi ANDO ,  Kazuhiko INOUE

    IPC: H01J37/141 ,  H01J37/147 ,  H01J37/065

    CPC classification number: H01J37/141 ,  H01J37/1475 ,  H01J37/065

    Abstract: An electromagnetic lens includes a coil, and a pole piece configured to include an upper wall, a lower wall, an outer peripheral wall and an inner peripheral wall which are formed using a conductive magnetic material, to surround the coil by the upper wall, the lower wall, the outer peripheral wall and the inner peripheral wall, one of opposite facing surfaces of an upper part and a lower part of the inner peripheral wall and opposite facing surfaces of the upper wall and the inner peripheral wall being insulated electrically, the outer peripheral wall including a laminated structure where a magnetic material and an insulator are alternately laminated in a direction of a central axis of a trajectory of a passing electron beam, and to be covered at least the laminated structure of the outer peripheral wall with an insulator.

    Objective lens system for fast scanning large FOV
    10.
    发明授权
    Objective lens system for fast scanning large FOV 有权

    公开(公告)号：US10008360B2

    公开(公告)日：2018-06-26

    申请号：US15007873

    申请日：2016-01-27

    Applicant: Hermes-Microvision, Inc.

    Inventor： Shuai Li ,  Zhongwei Chen

    IPC: H01J37/14 ,  H01J37/145 ,  H01J37/147 ,  H01J37/141

    CPC classification number: H01J37/145 ,  H01J37/141 ,  H01J37/1472 ,  H01J37/1474 ,  H01J37/1477

    Abstract: The device includes a beam source for generating an electron beam, a beam guiding tube passed through an objective lens, an objective lens for generating a magnetic field in the vicinity of the specimen to focus the particles of the particle beam on the specimen, a control electrode having a potential for providing a retarding field to the particle beam near the specimen to reduce the energy of the particle beam when the beam collides with the specimen, a deflection system including a plurality of deflection units situated along the optical axis for deflecting the particle beam to allow scanning on the specimen with large area, at least one of the deflection units located in the retarding field of the beam, the remainder of the deflection units located within the central bore of the objective lens, and a detection unit to capture secondary electron (SE) and backscattered electrons (BSE).

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