Abstract:
Chemical vapor deposition apparatus comprises a reactor having a chamber with a coating region for coating a substrate and an exhaust region communicating with the coating region. The coating region includes an inlet for introduction of a gaseous reactant stream to pass over the substrate to react therewith to form a coating thereon and a spent gas stream. The exhaust region includes an outlet for exhausting the spent gas stream from the coating region. The substrate is supported in the coating region and heated to an elevated reaction temperature by suitable support means and heating means. A condensing assembly is disposed in the exhaust region for condensing excess, unreacted gaseous reactant from the spent gas stream before entry into the outlet. The condensing assembly includes a high surface area, apertured structure disposed in the exhaust region where the temperature of the spent gas stream is sufficiently reduced to condense excess, unreacted gaseous reactant therefrom. An enclosure is disposed around the condensing structure and configured to direct the spent gas stream from the coating region to flow through the condensing structure where the excess, unreacted gaseous reactant can condense before entering the outlet.
Abstract:
An evacuation system in an ultra-high vacuum sputtering apparatus capable of shortening the pumping time of the system. A main pump, composed of a turbo-molecular pump and a baffle is positioned upstream of a main pump and cooled to a temperature in which argon gas is not absorbed and only water is absorbed. The pump and a vacuum chamber are separated by a valve. A pipeline circulates a heating medium to rapidly heat and cool the vacuum chamber for enabling a gas discharge from the vacuum chamber whereby the pumping time can be reduced and the overall production of the system can be increased.
Abstract:
A bulk getter-pump, consisting primarily of large beds of heated getter-material for use in pumping down in a high-vacuum environment. The pump is designed for applications now are served by turbo, cryo, diffusion, and ion pumps. The pump consists of a meshed cage filled with bulk getter-material pellets, which cage is housed in a housing coupled to a conduit of a vacuum chamber, so that the bulk getter-material is exposed to the interior of the vacuum chamber. In use, a roughing pump is first used to bring the chamber down to a pressure of about 10.sup.3 torr, and then the bulk getter-pump of the invention is operatively coupled to the chamber for sorbing gases, in order to reach a high vacuum.
Abstract:
Method of making selected phases of nanocrystalline ceramic materials. Various methods of controlling the production of nanocrystalline alpha alumina and titanium oxygen phases are described. Control of the gas atmosphere and use of particular oxidation treatments give rise to the ability to control the particular phases provided in the aluminum/oxygen and titanium/oxygen system.
Abstract:
This invention concerns a production method and a processing apparatus for semiconductor devices, as well as an evacuating apparatus used for the processing apparatus. According to this invention, since the evacuation system of pressure-reduction processing apparatus for conducting various wafer processings during production steps of semiconductor devices is constituted only with oil-free vacuum pump, deleterious oil contaminations or carbonation products of oils produced from oils upon heating are not present in the pressure-reducing processing chamber as compared with conventional pressure-reducing processing apparatus using a vacuum oil pump as an evacuation pump and the production method of semiconductor devices using such apparatus. Accordingly, highly clean evacuated condition can be attained and, in addition, semiconductor devices at high reliability and with no degradation in the electric characteristics can be obtained by using the pressure-reducing processing apparatus having such a highly clean processing chamber.
Abstract:
The present invention provides an apparatus having a high vacuum environment and a plurality of components located within the high vacuum environment so as to be exposed to high vacuum. At least one of the plurality of components is formed from a plastic material comprising liquid crystal polymer to prevent outgassing of the plastics material in the high vacuum environment.
Abstract:
Disclosed is a vacuum container for transporting one or more articles in the vacuum atomsphere. To this end, the vacuum container comprises a container body which can be maintained in the air-tight state and which is formed with a hole through which one or more articles are inserted into or removed out of said container body, a gate valve for opening or closing the opening of the container body, vacuum maintaining pump means communicated with the container body in order to maintain the interior thereof at an extremely high degree of vacuum and retaining means disposed within the container body for releasably retaining at least one article. With the vacuum container with the above-described construction, one or more articles which cannot be exposed to the surrounding atmosphere because of various reasons can be transported in the vacuum state in a stable manner.
Abstract:
An apparatus for plasma treatment, capable of plasma-treating works of resin material by irradiating the surfaces of the works with a microwave discharge plasma within a vacuum reaction chamber. A plasma introducing port is formed in the wall of the reaction chamber. A plasma-irradiating pipe is connected to the plasma introducing port for injecting the plasma into the reaction chamber to irradiate the surfaces of the works. A discharge port is formed in the wall of the reaction chamber to reduce the internal pressure of the reaction chamber. A plasma diffuser includes a rotatable vane for diffusing the flow of plasma to distribute uniform density of plasma in the reaction chamber. A plurality of deflecting plates projecting from the inner wall of the reaction chamber toward the interior thereof may also be provided to diffuse the flow of plasma in the reaction chamber. In a method, a plurality of the works are rotated in relation to each other about a common axis, and also individual works are rotated independently from each other about their own axes.
Abstract:
A pressure treatment chamber comprising an enclosure whose interior is maintained at predetermined pressure and temperature conditions, the enclosure defining at least one access port, a rotary feeder disposed within the enclosure and being maintained at the pressure and temperature conditions of the interior thereof and communicating with the access port via a conduit extending through the enclosure and filled with a condensible gas substantially to the exclusion of atmospheric air, and pressurized fluid sealing apparatus coupled to the conduit for providing communication between the conduit and the rotary feeder while reducing the amount of gas transfer between the interior and exterior of the enclosure.
Abstract:
A method for applying surface plasma-treating to works of resin material in a reaction chamber by irradiating the surfaces of the works with a microwave discharge plasma within the reaction chamber, comprising injection the plasma from a plurality of positions located adjacently to the inner wall of the reaction chamber, and injecting the plasma from each injecting position in a certain spreading angle along the direction of injection. An apparatus for plasma treatment, capable of plasma-treating works of resin material by irradiating the surfaces of the works with a microwave discharge plasma within a vacuum reaction chamber which is in the form of a circular cylinder of 1000 mm or more in diameter, the form of a square prism of 1000 mm or more in the length of a side or the analogous form, comprising a plurality of plasma introducing ports formed in the wall of the reaction chamber at optional positions thereon; and a glass pipe connected to each plasma introducing port for injecting the plasma into the reaction chamber in a certain spreading angle along the direction of injection.