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    Micro-electro-mechanical system (MEMS) structures and design structures
    202.
    发明授权
    Micro-electro-mechanical system (MEMS) structures and design structures 有权
    微机电系统（MEMS）结构和设计结构

    公开(公告)号：US08673670B2

    公开(公告)日：2014-03-18

    申请号：US13326604

    申请日：2011-12-15

    Applicant: Brian M. Czabaj ,  David A. DeMuynck ,  Anthony K. Stamper

    Inventor： Brian M. Czabaj ,  David A. DeMuynck ,  Anthony K. Stamper

    IPC: H01L21/00

    CPC classification number: H01L29/84 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2207/015 ,  B81C1/0015 ,  B81C1/00246 ,  G06F17/5068 ,  H01H2057/006

    Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes layering metal and insulator materials on a sacrificial material formed on a substrate. The method further includes masking the layered metal and insulator materials. The method further includes forming an opening in the masking which overlaps with the sacrificial material. The method further includes etching the layered metal and insulator materials in a single etching process to form the beam structure, such that edges of the layered metal and insulator material are aligned. The method further includes forming a cavity about the beam structure through a venting.

    Abstract translation: 公开了微机电系统（MEMS）结构，制造方法和设计结构。 该方法包括在形成在基底上的牺牲材料上分层金属和绝缘体材料。 该方法还包括掩蔽层状金属和绝缘体材料。 该方法还包括在掩模中形成与牺牲材料重叠的开口。 该方法还包括在单个蚀刻工艺中蚀刻层状金属和绝缘体材料以形成束结构，使得层状金属和绝缘体材料的边缘对准。 该方法还包括通过排气口形成围绕梁结构的空腔。

    Micro-electro-mechanical switch beam construction with minimized beam distortion and method for constructing
    203.
    发明授权
    Micro-electro-mechanical switch beam construction with minimized beam distortion and method for constructing 有权
    微电机械开关梁结构，最小化波束失真和构造方法

    公开(公告)号：US08659373B2

    公开(公告)日：2014-02-25

    申请号：US13648224

    申请日：2012-10-09

    Applicant: Analog Devices, Inc.

    Inventor： Denis Ellis ,  Padraig Fitzgerald ,  Jo-ey Wong ,  Raymond Goggin ,  Richard Tarik Eckl

    IPC: H01H51/22

    CPC classification number: H01H11/00 ,  B81B3/0081 ,  B81B2201/014 ,  H01H1/0036 ,  H01H59/0009 ,  Y10T29/49002 ,  Y10T29/49105

    Abstract: Disclosed is a micro-electro-mechanical switch, including a substrate having a gate connection, a source connection, a drain connection and a switch structure, coupled to the substrate. The switch structure includes a beam member, an anchor and a hinge. The beam member having a length sufficient to overhang both the gate connection and the drain connection. The anchor coupling the switch structure to the substrate, the anchor having a width. The hinge coupling the beam member to the anchor at a respective position along the anchor's length, the hinge to flex in response to a charge differential established between the gate and the beam member. The switch structure having gaps between the substrate and the anchor in regions proximate to the hinges.

    Abstract translation: 公开了一种微电子机械开关，其包括耦合到衬底的具有栅极连接的衬底，源极连接，漏极连接和开关结构。 开关结构包括梁构件，锚和铰链。 所述梁构件具有足以突出所述栅极连接和所述排出连接的长度。 所述锚将所述开关结构耦合到所述基底，所述锚具有宽度。 铰链将梁构件沿着锚固件的长度在相应位置处联接到锚固件，铰链响应于门和梁构件之间建立的电荷差异而弯曲。 开关结构在靠近铰链的区域中在基板和锚之间具有间隙。

    MEMS switches and fabrication methods
    204.
    发明授权
    MEMS switches and fabrication methods 失效
    MEMS开关和制造方法

    公开(公告)号：US08609450B2

    公开(公告)日：2013-12-17

    申请号：US12961047

    申请日：2010-12-06

    Applicant: Jeffrey P. Gambino ,  Stephen A. Mongeon

    Inventor： Jeffrey P. Gambino ,  Stephen A. Mongeon

    IPC: H01L21/00

    CPC classification number: H01H59/0009 ,  B81B2201/014 ,  B81B2203/051 ,  B81C1/00293 ,  B81C2203/0145 ,  H01H2001/0052 ,  H01H2059/0027

    Abstract: MEMS switches and methods of fabricating MEMS switches. The switch has a vertically oriented deflection electrode having a conductive layer supported by a supporting layer, at least one drive electrode, and a stationary electrode. An actuation voltage applied to the drive electrode causes the deflection electrode to be deflect laterally and contact the stationary electrode, which closes the switch. The deflection electrode is restored to a vertical position when the actuation voltage is removed, thereby opening the switch. The method of fabricating the MEMS switch includes depositing a conductive layer on mandrels to define vertical electrodes and then releasing the deflection electrode by removing the mandrel and layer end sections.

    Abstract translation: MEMS开关和制造MEMS开关的方法。 开关具有垂直取向的偏转电极，其具有由支撑层支撑的导电层，至少一个驱动电极和固定电极。 施加到驱动电极的致动电压使得偏转电极横向偏转并且接触固定电极，该固定电极闭合开关。 当去除致动电压时，偏转电极恢复到垂直位置，从而打开开关。 制造MEMS开关的方法包括在心轴上沉积导电层以限定垂直电极，然后通过去除心轴和层端部来释放偏转电极。

    MEMS devices
    207.
    发明授权
    MEMS devices 有权
    MEMS器件

    公开(公告)号：US08546712B2

    公开(公告)日：2013-10-01

    申请号：US13203624

    申请日：2010-03-04

    Applicant: Martijn Goossens ,  Hilco Suy ,  Peter Gerard Steeneken ,  Jozef Thomas Martinus van Beek

    Inventor： Martijn Goossens ,  Hilco Suy ,  Peter Gerard Steeneken ,  Jozef Thomas Martinus van Beek

    IPC: H01H57/00

    CPC classification number: B81B3/0078 ,  B81B2201/014 ,  B81B2201/016 ,  H01G5/011 ,  H01G5/16

    Abstract: A MEMS device comprises first and second opposing electrode arrangements (22,28), wherein the second electrode arrangement (28) is electrically movable to vary the electrode spacing between facing sides of the first and second electrode arrangements. At least one of the facing sides has a non-flat surface with at least one peak and at least one trough. The height of the peak and depth of the trough is between 0.01t and 0.1t where t is the thickness of the movable electrode.

    Abstract translation: MEMS器件包括第一和第二相对电极布置（22,28），其中第二电极布置（28）可电可移动以改变第一和第二电极布置的相对侧之间的电极间距。 至少一个相对侧具有具有至少一个峰和至少一个槽的非平坦表面。 槽的高度和深度在0.01t到0.1t之间，其中t是可动电极的厚度。

    Capacitive MEMS switch and method of fabricating the same
    209.
    发明授权
    Capacitive MEMS switch and method of fabricating the same 有权
    电容式MEMS开关及其制造方法

    公开(公告)号：US08460962B2

    公开(公告)日：2013-06-11

    申请号：US12813832

    申请日：2010-06-11

    Applicant: Herb He Huang

    Inventor： Herb He Huang

    IPC: B81C1/00 ,  B81B3/00

    CPC classification number: H01H59/0009 ,  B81B2201/014 ,  B81C1/00246 ,  B81C2203/0714 ,  H01H1/0036

    Abstract: The present invention discloses a capacitive MEMS switch on top of a semiconductor substrate containing a CMOS driving circuitry. The capacitive MEMS switch disclosed includes: 1) a semiconductor substrate containing a driving circuitry inside, and first and second conductors as well as a bottom electrode on top; 2) a suspended composite beam above and anchored onto the semiconductor substrate, containing a top electrode aligned to the bottom electrode with a first vertical distance, a top conductor, capped by a dielectric layer, having a first and second contact tips aligned with the first and second bottom conductors with a second vertical distance differentially smaller than the first vertical distance. The electrostatic attraction generated between the top electrode and the bottom electrode pulls the first and second contact tips in physical contact with and electrically connects the first and second bottom conductors through the top conductor.

    Abstract translation: 本发明公开了一种在包含CMOS驱动电路的半导体衬底之上的电容MEMS开关。 所公开的电容MEMS开关包括：1）在其内部包含驱动电路的半导体衬底，以及顶部的第一和第二导体以及底部电极; 2）在半导体衬底之上并锚固在半导体衬底上的悬挂复合梁，其包含具有第一垂直距离的与底部电极对准的顶部电极，由电介质层封盖的顶部导体，具有与第一垂直距离对准的第一和第二接触尖端 以及具有小于第一垂直距离的第二垂直距离的第二底部导体。 在顶部电极和底部电极之间产生的静电吸引力拉动第一和第二接触尖端物理接触并通过顶部导体电连接第一和第二底部导体。

    MICRO-ELECTRO-MECHANICAL SWITCH BEAM CONSTRUCTION WITH MINIMIZED BEAM DISTORTION AND METHOD FOR CONSTRUCTING
    210.
    发明申请
    MICRO-ELECTRO-MECHANICAL SWITCH BEAM CONSTRUCTION WITH MINIMIZED BEAM DISTORTION AND METHOD FOR CONSTRUCTING 有权
    具有最小波束失真的微机电开关梁结构和构造方法

    公开(公告)号：US20130126317A1

    公开(公告)日：2013-05-23

    申请号：US13741609

    申请日：2013-01-15

    Applicant: Raymond GOGGIN ,  Padraig FITZGERALD

    Inventor： Raymond GOGGIN ,  Padraig FITZGERALD

    IPC: H01H57/00

    CPC classification number: H01H57/00 ,  B81B7/0012 ,  B81B2201/014 ,  H01H59/0009

    Abstract: Disclosed is a micro-electro-mechanical switch, including a substrate having a gate connection, a source connection, a drain connection and a switch structure, coupled to the substrate. The switch structure includes a beam member, an anchor, an anchor beam interface and a hinge. The beam member having a length sufficient to overhang both the gate connection and the drain connection. The anchor coupling the switch structure to the substrate. The anchor beam interface coupling the anchor to the hinge. The hinge coupling the beam member to the anchor at a respective position along the anchor's length, the hinge to flex in response to a voltage differential established between the gate and the beam member. The switch structure having gaps between the substrate and the anchor in regions proximate to the hinges.

    Abstract translation: 公开了一种微电子机械开关，其包括耦合到衬底的具有栅极连接的衬底，源极连接，漏极连接和开关结构。 开关结构包括梁构件，锚固件，锚梁接口和铰链。 所述梁构件具有足以突出所述栅极连接和所述排出连接的长度。 将开关结构连接到基板上。 将锚杆与铰链连接的锚梁接口。 铰链将梁构件沿着锚定件的长度在相应位置处联接到锚固件，铰链响应于门和梁构件之间建立的电压差而弯曲。 开关结构在靠近铰链的区域中在基板和锚之间具有间隙。

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