公开(公告)号：US20040061051A1

公开(公告)日：2004-04-01

申请号：US10615499

申请日：2003-07-08

Inventor： Conrad W. Schneiker ,  Robert Gray

IPC: G21K007/00 ,  G01N023/00

CPC classification number: H01J37/073 ,  B33Y80/00 ,  B82Y10/00 ,  G01N23/04 ,  G21K1/06 ,  H01J1/3044 ,  H01J3/022 ,  H01J2201/30469

Abstract: A device for guiding a charged particle beam comprising a first superconducting nano-channel. In one embodiment, the device comprises a superconducting nano-channel consisting essentially of a superconducting material in the form of a tube having a proximal end, a distal end, and a bend disposed between said proximal end and said distal end. In another embodiment, the device is formed by a substrate, a first area of superconducting material coated on the substrate and having a first edge, a second area of superconducting material coated on the substrate and having a second edge, the first edge of the first area of superconducting material and the second edge of the second area of superconducting material are substantially parallel. In another embodiment, the device comprises a superconducting nano-channel formed by a plurality of nano-scale superconducting rods disposed around a central region.

Abstract translation: 一种用于引导包括第一超导纳米通道的带电粒子束的装置。 在一个实施例中，该装置包括基本上由管形式的超导材料组成的超导纳米通道，所述超导材料具有近端，远端和设置在所述近端和所述远端之间的弯曲部。 在另一个实施例中，该器件由衬底，涂覆在衬底上的第一区域的超导材料形成，并且具有第一边缘，涂覆在衬底上的第二区域的超导材料，并具有第二边缘，第一边缘处于第一边缘 超导材料的面积和超导材料的第二区域的第二边缘基本上平行。 在另一实施例中，该器件包括由设置在中心区域周围的多个纳米级超导棒形成的超导纳米通道。

公开(公告)号：US20040053432A1

公开(公告)日：2004-03-18

申请号：US10400746

申请日：2003-03-26

Inventor： Liang Liu ,  Shoushan Fan

IPC: H01L021/00 ,  H01J009/00

CPC classification number: B82Y30/00 ,  B82Y10/00 ,  C30B29/605 ,  C30B33/04 ,  H01J9/025 ,  H01J2201/30469 ,  Y10S977/901

Abstract: A method for processing one-dimensional nano-materials includes the following steps: providing a substrate (11); forming one-dimensional nano-materials (12) on the substrate, the one-dimensional nano-materials being substantially parallel to each other and each being substantially perpendicular to the substrate, the one-dimensional nano-materials cooperatively defining a top surface distal from the substrate; and applying physical energy (14) by means of a high-energy pulse laser beam to the top surface of the one-dimensional nano-materials. The resulting one-dimensional nano-materials have sharp, tapered tips (15, 15null). Distances between adjacent tips are approximately uniform, and are relatively large. This reduces shielding between adjacent one-dimensional nano-materials. The tips also contribute to a decreased threshold voltage required for field emission by the one-dimensional nano-materials.

Abstract translation: 一维纳米材料的处理方法包括以下步骤：提供基底（11）; 在衬底上形成一维纳米材料（12），所述一维纳米材料基本上彼此平行并且各自基本上垂直于所述衬底，所述一维纳米材料协同地限定远离所述衬底的顶表面 基材; 以及通过高能脉冲激光束将物理能量（14）施加到所述一维纳米材料的顶表面。 所得的一维纳米材料具有尖锐的锥形尖端（15,15'）。 相邻尖端之间的距离大致均匀，并且相对较大。 这减少了相邻的一维纳米材料之间的屏蔽。 这些提示还有助于通过一维纳米材料的场发射所需的阈值电压降低。

公开(公告)号：US20040045817A1

公开(公告)日：2004-03-11

申请号：US10658526

申请日：2003-09-10

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Won-Bong Choi ,  Min-Jae Yun ,  Yong-Wan Jin

IPC: C25C007/02

CPC classification number: B82Y10/00 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/00 ,  Y10S977/952

Abstract: A field emission array adopting carbon nanotubes as an electron emitter source, wherein the array includes a rear substrate assembly including cathodes formed as stripes over a rear substrate and carbon nanotubes; a front substrate assembly including anodes formed as stripes over a front substrate with phosphors being deposited on the anodes, a plurality of openings separated by a distance corresponding to the distance between the anodes in a nonconductive plate, and gates formed as stripes perpendicular to the stripes of anodes on the nonconductive plate with a plurality of emitter openings corresponding to the plurality of openings. The nonconductive plate is supported and separated from the front substrate using spacers. The rear substrate assembly is combined with the front substrate assembly such that the carbon nanotubes on the cathodes project through the emitter openings.

Abstract translation: 一种采用碳纳米管作为电子发射源的场致发射阵列，其中阵列包括后衬底组件，其包括在后衬底上形成为条纹的阴极和碳纳米管; 前面基板组件，其包括在正面基板上形成的带状荧光体的阳极，该荧光体沉积在阳极上，多个开口被分隔开与非导电板中的阳极之间的距离相对应的开口，以及形成为垂直于条纹的条纹的栅极 阳极在非导电板上具有对应于多个开口的多个发射器开口。 非导电板使用间隔件从前基板支撑和分离。 后基板组件与前基板组件结合，使得阴极上的碳纳米管突出通过发射器开口。

公开(公告)号：US20040043219A1

公开(公告)日：2004-03-04

申请号：US10433382

申请日：2003-05-29

Inventor： Fuminori Ito ,  Yuko Okada ,  Yoshinori Tomihari ,  Kazuo Konuma ,  Akihiko Okamoto

IPC: B32B009/00

CPC classification number: B82Y10/00 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469 ,  Y10T428/30

Abstract: Upon wet etching and thereby patterning carbon nanotubes (106) by a transfer method, a solution for dissolving a binder used in the transfer method as a solution used for the wet etching is used, and the carbon nanotubes (106) tangled with each other are rubbed off with a cloth-like substance (112) upon the wet etching. Furthermore, upon patterning the carbon nanotubes (106) using a dry etching method, a metal film or a film made of a substance resistant to damage upon the dry etching and causing no damage to the carbon nanotubes (106) when removed is used as a mask. A fine carbon nanotube pattern having an excellent flatness is formed.

Abstract translation: 通过湿式蚀刻，通过转印方法对碳纳米管（106）进行图案化，使用溶解用于转印法中的粘合剂作为用于湿法蚀刻的溶液的溶液，并且彼此缠结的碳纳米管（106） 在湿蚀刻时用布状物质（112）擦去。 此外，在使用干蚀刻法对碳纳米管（106）进行图案化时，使用金属膜或由干蚀刻而耐损坏的物质制成的膜，并且在去除时不会对碳纳米管（106）造成损害 面具。 形成平坦度优异的细碳纳米管图案。

公开(公告)号：US06700127B2

公开(公告)日：2004-03-02

申请号：US10042795

申请日：2002-01-09

Applicant: Conrad W. Schneiker ,  Stuart Hameroff ,  Robert W. Gray

Inventor： Conrad W. Schneiker ,  Stuart Hameroff ,  Robert W. Gray

IPC: H01J37073

CPC classification number: B82Y10/00 ,  H01J3/022 ,  H01J37/073 ,  H01J2201/30469 ,  Y10S977/881

Abstract: An apparatus for producing an electron beam, containing a vacuum chamber, a source of electron beams within the vacuum chamber, and a device for focusing the electrons beams. An electron transparent window is formed at the end of the vacuum chamber; and the vacuum chamber has a volume of less than about 1 cubic millimeter and a pressure of less than 10−7 Torr. In one embodiment, the focusing device is located outside of the vacuum chamber.

Abstract translation: 一种用于制造电子束的装置，包括真空室，真空室内的电子束源和用于聚焦电子束的装置。 在真空室的末端形成电子透明窗; 并且真空室具有小于约1立方毫米的体积和小于10 -7乇的压力。 在一个实施例中，聚焦装置位于真空室外部。

公开(公告)号：US20040038614A1

公开(公告)日：2004-02-26

申请号：US10228343

申请日：2002-08-24

Inventor： Yu-Yang Chang ,  Hua-Chi Cheng ,  Jyh-Rong Sheu ,  Ching-Hsun Chao ,  Kuang-Chung Chen

IPC: H01J009/02

CPC classification number: B82Y10/00 ,  H01J9/025 ,  H01J9/185 ,  H01J2201/30469

Abstract: A triode structure of a field emission display is manufactured with thick-film technology. The triode structure includes a cathode electrode layer that comprises a metallic catalyst. Isomeric carbon emitters can be grown on the cathode electrode layer by CVD process at a low temperature because of the metallic catalyst. Instead of mixing the metallic catalyst in the cathode electrode layer, a metallic catalyst layer can be formed on the cathode electrode layer to facilitate the growth of the isomeric carbon emitters. The combination of thick film technology and low temperature CVD process provide a low cost method for fabricating a large area field emission display with isomeric carbon emitters.

公开(公告)号：US20040036403A1

公开(公告)日：2004-02-26

申请号：US10432684

申请日：2003-05-19

Inventor： Takahito Ono ,  Esashi Masayoshi

IPC: H01J001/30 ,  H01J009/04

CPC classification number: H01J9/025 ,  G01Q70/12 ,  H01J2201/30469 ,  H01J2329/00

Abstract: In this invention, protrusions are formed on a substrate such as silicon and quartz glass, and catalytic metal of transition element, such as nickel, iron and cobalt are coated on the substrate, and carbon nanotubes are grown by hot-filament chemical vapor deposition or microwave-plasma enhanced chemical vapor deposition under an application of negative voltage to the substrate. Where the substrate is heated. In these methods, carbon nanotubes can be selectively grown from the apex of protrusions. As a substrate, silicon probe for scanning probe microscopy (SPM) can be used. The carbon nanotube probe can be applied to high resolution SPM probe for imaging a precise topographic image.

Abstract translation: 在本发明中，在诸如硅和石英玻璃的基板上形成突起，并且在基板上涂覆诸如镍，铁和钴的过渡元素的催化金属，并且通过热丝化学气相沉积生长碳纳米管 微波等离子体增强化学气相沉积在负电压下施加到基板上。 在衬底被加热的地方。 在这些方法中，可以从突起的顶点选择性地生长碳纳米管。 作为基板，可以使用用于扫描探针显微镜（SPM）的硅探针。 碳纳米管探针可以应用于高分辨率SPM探针，用于对精确的地形图像进行成像。

公开(公告)号：US20040032194A1

公开(公告)日：2004-02-19

申请号：US10637404

申请日：2003-08-08

Applicant: Matsushita Electric Industrial Co., Ltd.

Inventor： Keisuke Koga ,  Toru Kawase ,  Kenichi Honda ,  Tetsuya Norikane

IPC: H01J001/02 ,  H01J063/04

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J1/3044 ,  H01J2201/30426 ,  H01J2201/30469

Abstract: A field-emission electron source element includes a cathode substrate, an insulating layer that is formed on the cathode substrate and has an opening, a lead electrode formed on the insulating layer, and an emitter formed in the opening. A surface layer of an electron emitting region of the emitter is doped with at least one reducing element selected from the group consisting of hydrogen and carbon monoxide. Further, an image display apparatus including the above-mentioned field-emission electron source element is provided. This makes it possible to obtain not only a stable field-emission electron source element that does not cause a current drop even after a high current density operation for a long time but also a high-performance image display apparatus that can maintain a stable display performance over a long period of time.

Abstract translation: 场发射电子源元件包括阴极基板，形成在阴极基板上并具有开口的绝缘层，形成在绝缘层上的引线电极和形成在开口中的发射极。 发射体的电子发射区的表面层掺杂有选自氢和一氧化碳的至少一种还原元素。 此外，提供了包括上述场发射电子源元件的图像显示装置。 这使得不仅可以获得即使在长时间的高电流密度操作之后也不会引起电流下降的稳定的场致发射电子源元件，而且可以获得可以保持稳定的显示性能的高性能图像显示装置 在很长一段时间内。

公开(公告)号：US20040018371A1

公开(公告)日：2004-01-29

申请号：US10372006

申请日：2003-02-21

Applicant: SI Diamond Technology, Inc.

Inventor： Dongsheng Mao

IPC: B22F003/26

CPC classification number: C23C18/1204 ,  B82Y10/00 ,  B82Y30/00 ,  C23C18/1635 ,  C23C18/2066 ,  C23C18/31 ,  H01J9/025 ,  H01J2201/30469 ,  Y10T428/12007

Abstract: The present invention is directed towards metallized carbon nanotubes, methods for making metallized carbon nanotubes using an electroless plating technique, methods for dispensing metallized carbon nanotubes onto a substrate. The present invention is also directed towards cold cathode field emitting materials comprising metallized carbon nanotubes, and methods of using metallized carbon nanotubes as cold cathode field emitters.

Abstract translation: 本发明涉及金属化碳纳米管，使用化学镀技术制造金属化碳纳米管的方法，用于将金属化碳纳米管分配到基底上的方法。 本发明还涉及包括金属化碳纳米管的冷阴极场发射材料，以及使用金属化碳纳米管作为冷阴极场致发射体的方法。

公开(公告)号：US20040000861A1

公开(公告)日：2004-01-01

申请号：US10179376

申请日：2002-06-26

Inventor： Benjamin F. Dorfman

IPC: H01J001/62

CPC classification number: B82Y10/00 ,  H01J1/3046 ,  H01J2201/30469 ,  Y10T428/30

Abstract: A field emission cathode consisting of atomic-scale composite material comprising three atomic networks is proposed. The first and the second atomic networks penetrate into each other and form carbon-based stabilized dielectric medium and the third atomic network is a conductive network of metallic atoms. The atomic scale composite material may also contain conductive nano-crystals immersed into the carbon-based stabilized dielectric medium. The atomic-scale conductive network and nano-crystals reach the film surface and film edge forming nanometer scale field emission sites. They may be partially exposed by etching the other components of the cathode material thereby forming atomic-scale and/or nano-scale field emission metallic tips. The field emission cathode can be used as an efficient cold cathode in a variety of electronic devices, such as flat panel field emission displays, microwave diodes, triodes and more complex devices.

Abstract translation: 提出了由包括三个原子网络的原子级复合材料构成的场致发射阴极。 第一和第二原子网络彼此渗透并形成碳基稳定介电介质，第三原子网络是金属原子的导电网络。 原子级复合材料还可以含有浸入碳基稳定介电介质中的导电纳米晶体。 原子级导电网络和纳米晶体到达膜表面和膜边缘形成纳米级场发射场。 它们可以通过蚀刻阴极材料的其它部件从而形成原子尺度和/或纳米级场致发射金属尖端而被部分暴露。 场发射阴极可以用作各种电子器件中的有效冷阴极，例如平板场发射显示器，微波二极管，三极管和更复杂的器件。