公开(公告)号：US06331257B1

公开(公告)日：2001-12-18

申请号：US09452052

申请日：1999-11-30

Applicant: Robert Y. Loo ,  Adele Schmitz ,  Julia Brown ,  James Foschaar ,  Daniel J. Hyman ,  Tsung-Yuan Hsu

Inventor： Robert Y. Loo ,  Adele Schmitz ,  Julia Brown ,  James Foschaar ,  Daniel J. Hyman ,  Tsung-Yuan Hsu

IPC: H01B1300

CPC classification number: B81B3/0072 ,  B81B2201/014 ,  B81B2203/0118 ,  H01G5/18 ,  H01G5/38 ,  H01G5/40 ,  H01H1/50 ,  H01H59/0009 ,  H01P1/12

Abstract: Methods for the design and fabrication of micro-electro-mechanical switches are disclosed. Two different switch designs with three different switch fabrication techniques are presented for a total of six switch structures. Each switch has a multiple-layer armature with a suspended biasing electrode and a conducting transmission line affixed to the structural layer of the armature. A conducting dimple is connected to the conducting line to provide a reliable region of contact for the switch. The switch is fabricated using silicon nitride as the armature structural layer and silicon dioxide as the sacrificial layer supporting the armature during fabrication. Hydrofluoric acid is used to remove the silicon dioxide layer with post-processing in a critical point dryer to increase yield.

Abstract translation: 公开了微机电开关的设计和制造方法。 提出了三种不同的开关制造技术的两种不同的开关设计，共有六种开关结构。 每个开关具有多层电枢，其具有悬置的偏置电极和固定到电枢的结构层的导电传输线。 导电凹坑连接到导线，为开关提供可靠的接触区域。 该开关使用氮化硅作为电枢结构层和二氧化硅作为在制造期间支撑电枢的牺牲层制造。 氢氟酸用于在临界点干燥器中进行后处理以去除二氧化硅层以提高产率。

公开(公告)号：US06235550B1

公开(公告)日：2001-05-22

申请号：US09478026

申请日：2000-01-05

Applicant: Tsiu Chiu Chan ,  Melvin Joseph DeSilva

Inventor： Tsiu Chiu Chan ,  Melvin Joseph DeSilva

IPC: H01L2100

CPC classification number: G01P15/18 ,  B81B2201/014 ,  B81C1/00246 ,  B81C2203/0735 ,  G01P15/0802 ,  G01P15/135

Abstract: An integrated circuit and method are provided for sensing activity such as acceleration in a predetermined direction of movement. The integrated released beam sensor preferably includes a switch detecting circuit region and a sensor switching region connected to and positioned adjacent the switch detecting circuit region. The sensor switching region preferably includes a plurality of floating contacts positioned adjacent and lengthwise extending outwardly from said switch detecting circuit region for defining a plurality of released beams so that each of said plurality of released beams displaces in a predetermined direction responsive to acceleration. The plurality of released beams preferably includes at least two released beams lengthwise extending outwardly from the switch detecting circuit region to different predetermined lengths and at least two released beams lengthwise extending outwardly from the switch detecting circuit region to substantially the same predetermined lengths. The methods of forming an integrated sensor advantageously are preferably compatible with know integrated circuit manufacturing processes, such as for CMOS circuit manufacturing, with only slight variations therefrom.

Abstract translation: 提供集成电路和方法用于感测诸如预定运动方向的加速度的活动。 集成释放的光束传感器优选地包括开关检测电路区域和连接到并且位于开关检测电路区域附近的传感器开关区域。 传感器切换区域优选地包括多个浮动触点，其位于邻近并纵向地从所述开关检测电路区域向外延伸，用于限定多个释放的波束，使得所述多个释放波束中的每一个响应加速度以预定方向移动。 多个释放的光束优选地包括至少两个从开关检测电路区域向外延伸到不同预定长度的释放光束，以及至少两个从开关检测电路区域向外延伸到大致相同的预定长度的释放光束。 有利地形成集成传感器的方法优选地与知道的集成电路制造工艺相兼容，例如用于CMOS电路制造，仅具有轻微的变化。

公开(公告)号：US20240270566A1

公开(公告)日：2024-08-15

申请号：US18022145

申请日：2022-03-31

Applicant: Beijing BOE Optoelectronics Technology Co., Ltd. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hao YAN ,  Yulin FENG ,  Yue LI ,  Chuncheng CHE

IPC: B81B7/00 ,  B81C99/00 ,  H05K1/03 ,  H05K1/11 ,  H05K1/18

CPC classification number: B81B7/0006 ,  B81C99/00 ,  H05K1/0306 ,  H05K1/115 ,  H05K1/181 ,  B81B2201/014 ,  B81B2203/0118 ,  H05K2201/10053 ,  H05K2201/1006

Abstract: An electronic device includes a substrate having a first surface and a second surface opposite to each other in a thickness direction of the substrate, wherein the substrate has first and second connection vias which penetrate through the substrate in the thickness direction of the substrate, and first and second conductive pillars are respectively in the first connection via and the second connection via; a switch on the first surface of the substrate and comprising first and second signal electrodes, wherein the first signal electrode is electrically coupled to a first terminal of the first conductive pillar, and the second signal electrode is electrically coupled to a first terminal of the second conductive pillar; and a filter on the second surface of the substrate.

公开(公告)号：US20180319652A1

公开(公告)日：2018-11-08

申请号：US16031132

申请日：2018-07-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Russell T. HERRIN ,  Jeffrey C. MALING ,  Anthony K. STAMPER

IPC: B81B3/00 ,  H01L41/113 ,  B81C1/00

CPC classification number: B81C1/00365 ,  B81B3/0021 ,  B81B3/0072 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.

公开(公告)号：US20180072568A1

公开(公告)日：2018-03-15

申请号：US15807715

申请日：2017-11-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Anthony K. Stamper ,  John G. Twombly

IPC: B81C1/00 ,  H01H59/00 ,  H01L41/113 ,  H01H57/00 ,  G06F17/50 ,  B81B3/00 ,  H01H1/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

公开(公告)号：US20180072567A1

公开(公告)日：2018-03-15

申请号：US15802801

申请日：2017-11-03

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC: B81C1/00 ,  H01H59/00 ,  H01L41/113 ,  H01H57/00 ,  G06F17/50 ,  B81B3/00 ,  H01H1/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US20180057357A1

公开(公告)日：2018-03-01

申请号：US15790515

申请日：2017-10-23

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Russell T. HERRIN ,  Jeffrey C. MALING ,  Anthony K. STAMPER

IPC: B81C1/00 ,  H01H59/00 ,  H01L41/113 ,  H01H57/00 ,  G06F17/50 ,  B81B3/00 ,  H01H1/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.

公开(公告)号：US09890039B2

公开(公告)日：2018-02-13

申请号：US15212896

申请日：2016-07-18

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Russell T. Herrin ,  Jeffrey C. Maling ,  Anthony K. Stamper

IPC: H05K3/00 ,  B81C1/00 ,  H01L41/113 ,  H01H57/00 ,  B81B3/00 ,  G06F17/50 ,  H01H1/00 ,  H01H59/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a beam structure and an electrode on an insulator layer, remote from the beam structure. The method further includes forming at least one sacrificial layer over the beam structure, and remote from the electrode. The method further includes forming a lid structure over the at least one sacrificial layer and the electrode. The method further includes providing simultaneously a vent hole through the lid structure to expose the sacrificial layer and to form a partial via over the electrode. The method further includes venting the sacrificial layer to form a cavity. The method further includes sealing the vent hole with material. The method further includes forming a final via in the lid structure to the electrode, through the partial via.

公开(公告)号：US20180012972A1

公开(公告)日：2018-01-11

申请号：US15695440

申请日：2017-09-05

Applicant: Purdue Research Foundation

Inventor： Muhammad Ashraful Alam ,  Muhammad Masuduzzaman ,  Ankit Jain

IPC: H01L29/51 ,  H01G7/06 ,  H01G4/38 ,  H01G5/40 ,  H01L27/08 ,  B81B7/02 ,  H01L29/78 ,  H01G5/16 ,  H01L49/02

CPC classification number: H01L29/515 ,  B81B7/02 ,  B81B2201/014 ,  B81B2201/016 ,  B81B2201/07 ,  H01G4/38 ,  H01G5/16 ,  H01G5/40 ,  H01G7/06 ,  H01L27/0805 ,  H01L27/11502 ,  H01L27/11585 ,  H01L29/516 ,  H01L29/7842

Abstract: An electrical circuit comprising at least two negative capacitance insulators connected in series, one of the two negative capacitance insulators is biased to generate a negative capacitance. One of the negative capacitance insulators may include an air-gap which is part of a nanoelectromechnical system (NEMS) device and the second negative capacitance insulator includes a ferroelectric material. Both of the negative capacitance insulators may be located between the channel and gate of a field effect transistor. The NEMS device may include a movable electrode, a dielectric and a fixed electrode and arranged so that the movable electrode is attached to at least two points and spaced apart from the dielectric and fixed electrode, and the ferroelectric capacitor is electrically connected to either of the electrodes.

公开(公告)号：US20180009658A1

公开(公告)日：2018-01-11

申请号：US15698682

申请日：2017-09-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC: B81C1/00 ,  H01L41/113 ,  H01H1/00 ,  G06F17/50 ,  B81B3/00 ,  H01H59/00 ,  H01H57/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.